US-12620520-B2 - Overlapped inductor structure

US12620520B2US 12620520 B2US12620520 B2US 12620520B2US-12620520-B2

Abstract

An inductor structure includes a first inductor and a second inductor. A first portion of the first inductor is disposed on a first layer and a second portion of the first inductor is disposed on a second layer. A first portion of the second inductor is disposed on the first layer and a second portion of the second inductor is disposed on the second layer. The first portion of the first inductor and the second portion of the second inductor at least partially overlap. The second portion of the first inductor and the first portion of the second inductor at least partially overlap.

Inventors

Jayesh Wadekar
Jayashankar MV
Jairaj NAIK K R
Atul Kabra

Assignees

SYNOPSYS, INC.

Dates

Publication Date: 20260505
Application Date: 20220728
Priority Date: 20210803

Claims (15)

1 . An inductor structure comprising: a first inductor, wherein a first portion of the first inductor is disposed on a first layer and a second portion of the first inductor is disposed on a second layer; and a second inductor, wherein a first portion of the second inductor is disposed on the first layer and a second portion of the second inductor is disposed on the second layer, wherein the first portion of the first inductor and the second portion of the second inductor at least partially overlap, wherein a first current in the first portion of the first inductor and a second current in the second portion of the second inductor have a same direction, wherein a first end of the first inductor and a first end of the second inductor are disposed on the first layer, wherein a second end of the first inductor and a second end of the second inductor are disposed on the second layer, wherein the first end of the first inductor at least partially overlaps the second end of the second inductor, wherein the first end of the second inductor at least partially overlaps the second end of the first inductor, and wherein the second portion of the first inductor and the first portion of the second inductor at least partially overlap.
2 . The inductor structure of claim 1 , wherein a coefficient of coupling for the first inductor and the second inductor is positive.
3 . The inductor structure of claim 1 , wherein an intervening layer is positioned between the first layer and the second layer, and wherein the first inductor and the second inductor transition between the first layer and the second layer using vias in the intervening layer.
4 . The inductor structure of claim 1 , wherein the first inductor and the second inductor transition between the first layer and the second layer five times.
5 . The inductor structure of claim 1 , wherein the first inductor comprises two turns, and wherein the second inductor comprises two turns.
6 . A chip comprising: a first metal layer; a second metal layer; a first inductor, wherein a first portion of the first inductor is disposed on the first metal layer and a second portion of the first inductor is disposed on the second metal layer; and a second inductor, wherein a first portion of the second inductor is disposed on the first metal layer and a second portion of the second inductor is disposed on the second metal layer, wherein the first portion of the first inductor and the second portion of the second inductor at least partially overlap, wherein a first current in the first portion of the first inductor and a second current in the second portion of the second inductor have a same direction, wherein a first end of the first inductor and a first end of the second inductor are disposed on the first metal layer, wherein a second end of the first inductor and a second end of the second inductor are disposed on the second metal layer, wherein the first end of the first inductor at least partially overlaps the second end of the second inductor, wherein the first end of the second inductor at least partially overlaps the second end of the first inductor, and wherein the second portion of the first inductor and the first portion of the second inductor at least partially overlap.
7 . The chip of claim 6 , wherein a coefficient of coupling for the first inductor and the second inductor is positive.
8 . The chip of claim 6 , wherein an intervening layer is positioned between the first metal layer and the second metal layer, and wherein the first inductor and the second inductor transition between the first metal layer and the second metal layer using vias in the intervening layer.
9 . The chip of claim 6 , wherein the first inductor and the second inductor transition between the first metal layer and the second metal layer five times.
10 . The chip of claim 6 , wherein the first inductor comprises two turns, and wherein the second inductor comprises two turns.
11 . An amplifier circuit comprising: a transimpedance amplifier; a first inductor electrically coupled to the transimpedance amplifier, wherein a first portion of the first inductor is disposed on a first layer and a second portion of the first inductor is disposed on a second layer; and a second inductor electrically coupled to the transimpedance amplifier, wherein a first portion of the second inductor is disposed on the first layer and a second portion of the second inductor is disposed on the second layer, wherein the first portion of the first inductor and the second portion of the second inductor at least partially overlap, wherein a first current in the first portion of the first inductor and a second current in the second portion of the second inductor have a same direction, wherein a first end of the first inductor and a first end of the second inductor are disposed on the first layer, wherein a second end of the first inductor and a second end of the second inductor are disposed on the second layer, wherein the first end of the first inductor at least partially overlaps the second end of the second inductor, wherein the first end of the second inductor at least partially overlaps the second end of the first inductor, and wherein the second portion of the first inductor and the first portion of the second inductor at least partially overlap.
12 . The amplifier circuit of claim 11 , wherein a coefficient of coupling for the first inductor and the second inductor is positive.
13 . The amplifier circuit of claim 11 , wherein an intervening layer is positioned between the first layer and the second layer, and wherein the first inductor and the second inductor transition between the first layer and the second layer using vias in the intervening layer.
14 . The amplifier circuit of claim 11 , wherein the first inductor and the second inductor comprise consecutive metals.
15 . The amplifier circuit of claim 11 , wherein the first inductor and the second inductor transition between the first layer and the second layer five times.

Description

RELATED APPLICATION This application claims priority to and the benefit of Indian Provisional Patent Application Serial No. 202141034894, entitled “OVERLAPPED SYMMETRIC INDUCTOR STRUCTURE,” filed Aug. 3, 2021, which is incorporated herein by reference in its entirety. TECHNICAL FIELD The present disclosure relates to an inductor structure, and more particularly, to an overlapped and symmetric inductor structure. BACKGROUND An inductor, also referred to as a coil, is a passive two-terminal component that stores energy in the form of a magnetic field when electric current flows through the inductor. Inductors are used in various devices such as transformers, amplifiers, and regulators. An inductor may be implemented using a coil of wire with one or more turns aimed to achieve a given inductance value. SUMMARY The present disclosure describes an inductor structure, a chip, and an amplifier. According to an embodiment, an inductor structure includes a first inductor and a second inductor. A first portion of the first inductor is disposed on a first layer and a second portion of the first inductor is disposed on a second layer. A first portion of the second inductor is disposed on the first layer and a second portion of the second inductor is disposed on the second layer. The first portion of the first inductor and the second portion of the second inductor at least partially overlap. The second portion of the first inductor and the first portion of the second inductor at least partially overlap. A first end of the first inductor and a first end of the second inductor may be disposed on the first layer. A second end of the first inductor and a second end of the second inductor may be disposed on the second layer. A coefficient of coupling for the first inductor and the second inductor may be positive. An intervening layer may be positioned between the first layer and the second layer. The first inductor and the second inductor may transition between the first layer and the second layer using vias in the intervening layer. The first inductor and the second inductor may include consecutive metals. The first inductor and the second inductor may transition between the first layer and the second layer five times. The first inductor may include two turns. The second inductor may include two turns. According to another embodiment, a chip includes a first metal layer, a second metal layer, a first inductor, and a second inductor. A first portion of the first inductor is disposed on the first metal layer and a second portion of the first inductor is disposed on the second metal layer. A first portion of the second inductor is disposed on the first metal layer and a second portion of the second inductor is disposed on the second metal layer. The first portion of the first inductor and the second portion of the second inductor at least partially overlap. The second portion of the first inductor and the first portion of the second inductor at least partially overlap. A first end of the first inductor and a first end of the second inductor may be disposed on the first metal layer. A second end of the first inductor and a second end of the second inductor may be disposed on the second metal layer. A coefficient of coupling for the first inductor and the second inductor may be positive. An intervening layer may be positioned between the first metal layer and the second metal layer. The first inductor and the second inductor may transition between the first metal layer and the second metal layer using vias in the intervening layer. The first inductor and the second inductor may include consecutive metals. The first inductor and the second inductor may transition between the first metal layer and the second metal layer five times. The first inductor may include two turns. The second inductor may include two turns. According to another embodiment, an amplifier includes a transimpedance amplifier, a first inductor electrically coupled to the transimpedance amplifier, and a second inductor electrically coupled to the transimpedance amplifier. A first portion of the first inductor is disposed on a first layer and a second portion of the first inductor is disposed on a second layer. A first portion of the second inductor is disposed on the first layer and a second portion of the second inductor is disposed on the second layer. The first portion of the first inductor and the second portion of the second inductor at least partially overlap. The second portion of the first inductor and the first portion of the second inductor at least partially overlap. A first end of the first inductor and a first end of the second inductor may be disposed on the first layer. A second end of the first inductor and a second end of the second inductor may be disposed on the second layer. A coefficient of coupling for the first inductor and the second inductor may be positive. An intervening layer may be positioned between the first layer and the second la