US-12620530-B2 - Device and process for implementing silicon carbide (SiC) surface mount devices

Abstract

In some aspects, a device includes a substrate. A first metallization arranged on the substrate. A second metallization arranged on the substrate. A circuit arranged on the substrate and electrically connected to the first metallization and the second metallization. The first metallization and the second metallization being configured, structured, and arranged to make a solder connection to a device, where the substrate may include silicon carbide (SiC).

Inventors

• Kok Meng KAM
• Eng Wah Woo
• Samantha CHEANG
• Marvin Marbell
• Haedong Jang
• Jeremy Fisher
• Basim Noori

Assignees

• WOLFSPEED, INC.

Dates

Publication Date

20260505

Application Date

20220923

Claims (20)

1. 1 . A silicon carbide (SiC) surface mount device (SMD) comprising: a substrate comprising a first surface and a second surface opposite the first surface; a first metallization arranged on the first surface and the second surface of the substrate; a second metallization arranged on the first surface and the second surface of the substrate; a circuit arranged on the substrate and electrically connected to the first metallization and the second metallization; and the first metallization and the second metallization being configured, structured, and arranged to make a solder connection to a device, wherein the substrate comprises silicon carbide (SiC).
2. 2 . The silicon carbide (SiC) surface mount device (SMD) according to claim 1 wherein the circuit is on the first surface of the substrate; wherein the first metallization comprises a first top-side metallization; and wherein the second metallization comprises a second top-side metallization.
3. 3 . The silicon carbide (SiC) surface mount device (SMD) according to claim 2 wherein the circuit is on the first surface of the substrate and the circuit is configured to electrically connect to the first top-side metallization and the second top-side metallization.
4. 4 . The silicon carbide (SiC) surface mount device (SMD) according to claim 2 wherein the silicon carbide (SiC) surface mount device (SMD) is configured as a flip Chip device; and wherein the first top-side metallization and the second top-side metallization are configured as SMD leads configured, structured, and arranged to make the solder connection to the device.
5. 5 . The silicon carbide (SiC) surface mount device (SMD) according to claim 1 wherein the first metallization comprises a first bottom-side metallization and a first top-side metallization; wherein the second metallization comprises a second bottom-side metallization and a second top-side metallization; and wherein the substrate comprises at least one via connected to the first bottom-side metallization and the first top-side metallization and/or wherein the substrate comprises at least one via connected to the second bottom-side metallization and the second top-side metallization.
6. 6 . The silicon carbide (SiC) surface mount device (SMD) according to claim 1 wherein the device comprises a device substrate; wherein the device substrate comprises a printed circuit board (PCB), a printed wiring board (PWB), and/or a printed circuit board assembly (PCBA); and wherein the first metallization and the second metallization being configured, structured, and arranged to make a solder connection to the device substrate.
7. 7 . The silicon carbide (SiC) surface mount device (SMD) according to claim 1 wherein the substrate comprises at least one via connected to the first metallization and/or the second metallization; and wherein the circuit comprises at least a capacitor, an inductor, a spiral inductor, a transmission line, a resistor, and/or combinations thereof.
8. 8 . The silicon carbide (SiC) surface mount device (SMD) according to claim 1 wherein the substrate comprises at least one via connected to the first metallization and/or the second metallization; and wherein the silicon carbide (SiC) surface mount device (SMD) comprises at least a Metal-Insulator-Metal (MIM) capacitor with a first metal and a second metal having a dielectric layer therebetween.
9. 9 . A device implementing the silicon carbide (SiC) surface mount device (SMD) according to claim 1 , the device comprising: a device substrate; a first top metal on the device substrate; a second top metal on the device substrate; a first solder portion arranged on the first top metal; and a second solder portion arranged on the second top metal, wherein the device substrate comprises a printed circuit board (PCB), a printed wiring board (PWB), and/or a printed circuit board assembly (PCBA).
10. 10 . The device implementing the silicon carbide (SiC) surface mount device (SMD) according to claim 9 further comprising: a first solder mask; and a second solder mask, wherein the first solder mask is arranged on the first top metal of the device; and wherein the second solder mask is arranged on the second top metal of the device.
11. 11 . The device implementing the silicon carbide (SiC) surface mount device (SMD) according to claim 10 wherein the first solder mask and the second solder mask are configured to contain reflowed solder such that the silicon carbide (SiC) surface mount device (SMD) self-aligns to a more exact intended placement position on the device substrate of the device.
12. 12 . The device implementing the silicon carbide (SiC) surface mount device (SMD) according to claim 10 wherein the first solder mask comprises a first portion, a second portion, and a third portion; wherein the first portion of the first solder mask is configured to connect to the second portion of the first solder mask; and wherein the second portion of the first solder mask is configured to connect to the third portion of the first solder mask.
13. 13 . The device implementing the silicon carbide (SiC) surface mount device (SMD) according to claim 12 wherein the first portion of the first solder mask, the second portion of the first solder mask, and the third portion of the first solder mask are configured to form a U-shape on the first top metal.
14. 14 . The device implementing the silicon carbide (SiC) surface mount device (SMD) according to claim 9 wherein the silicon carbide (SiC) surface mount device (SMD) is configured to be attached to the device substrate using the first solder portion and/or the second solder portion.
15. 15 . The silicon carbide (SiC) surface mount device (SMD) according to claim 1 wherein the substrate comprises semi-insulating silicon carbide.
16. 16 . A process of implementing a silicon carbide (SiC) surface mount device (SMD) comprising: providing a substrate comprising a first surface and a second surface opposite the first surface; arranging a first metallization on the first surface and the second surface of the substrate; arranging a second metallization on the first surface and the second surface of the substrate; arranging a circuit electrically connected to the first metallization and the second metallization; and reflowing a solder to connect the first metallization and the second metallization to a device, wherein the substrate comprises silicon carbide (SiC).
17. 17 . The process of implementing a silicon carbide (SiC) surface mount device (SMD) according to claim 16 wherein the circuit is on the first surface of the substrate; wherein the first metallization comprises a first top-side metallization; and wherein the second metallization comprises a second top-side metallization.
18. 18 . The process of implementing a silicon carbide (SiC) surface mount device (SMD) according to claim 17 wherein the silicon carbide (SiC) surface mount device (SMD) is configured as a flip Chip device; and wherein the first top-side metallization and the second top-side metallization are configured, structured, and arranged to make a solder connection to the device.
19. 19 . The process of implementing a silicon carbide (SiC) surface mount device (SMD) according to claim 17 further comprising electrically connecting the circuit to the first top-side metallization and the second top-side metallization.
20. 20 . The process of implementing a silicon carbide (SiC) surface mount device (SMD) according to claim 16 wherein the device comprises a device substrate; wherein the device substrate comprises a printed circuit board (PCB), a printed wiring board (PWB), and/or a printed circuit board assembly (PCBA); and wherein the first metallization and the second metallization being configured, structured, and arranged to make a solder connection to the device substrate.

Description

FIELD OF THE DISCLOSURE The disclosure relates to silicon carbide (SiC) surface mount devices. The disclosure also relates to a process of implementing silicon carbide (SiC) surface mount devices. The disclosure relates to a device implementing silicon carbide (SiC) surface mount devices. The disclosure further relates to a process for implementing a device implementing silicon carbide (SiC) surface mount devices. BACKGROUND OF THE DISCLOSURE Typically, SiC based components are attached to a metal surface using an epoxy material, a silver (Ag) material, a Gold-Tin (AuSn) material, other dispensed attach material, and/or the like. For example, SiC based components are typically attached to a metal flange of a device using an epoxy material, an Ag sinter material, a pre-attached AuSn material backside material, other dispensed attach material, and/or the like. These materials typically require a large dispense nozzle in order to dispense material in the desired location. However, the large dispense nozzle requires a larger dispense area and accordingly requires a larger component. Accordingly, use of a dispensed material, such as an epoxy material, is not easily implemented for smaller form factor SiC based components, which increases device cost. Moreover, use of a dispensed material, such as an epoxy material, requires a cure temperature that can be as high as 400 C. This higher cure temperature reduces device reliability, device ruggedness, increases device cost, and/or the like. Furthermore, utilizing a dispensed material, such as an epoxy material, requires more exacting placement of SiC based components. In this regard, the SiC based components must be placed in the exact location prior to curing, which increases device cost and manufacturing time. Accordingly, what is needed is SiC based components configured to implement an improved attachment and an improved attachment process to reduce cost, manufacturing time and/or the like. SUMMARY OF THE DISCLOSURE In one general aspect, a silicon carbide surface mount device includes a substrate; a first metallization arranged on the substrate; a second metallization arranged on the substrate; a circuit arranged on the substrate and electrically connected to the first metallization and the second metallization; and the first metallization and the second metallization being configured, structured, and arranged to make a solder connection to a device. The silicon carbide surface mount device in addition includes where the substrate may include silicon carbide (SiC). In one general aspect, a process includes providing a substrate; arranging a first metallization on the substrate; arranging a second metallization on the substrate; arranging a circuit electrically connected to the first metallization and the second metallization; and reflowing a solder to connect the first metallization and the second metallization to a device. The process in addition includes where the substrate may include silicon carbide (SiC). Additional features, advantages, and aspects of the disclosure may be set forth or apparent from consideration of the following detailed description, drawings, and claims. Moreover, it is to be understood that both the foregoing summary of the disclosure and the following detailed description are exemplary and intended to provide further explanation without limiting the scope of the disclosure as claimed. BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings, which are included to provide a further understanding of the disclosure, are incorporated in and constitute a part of this specification, illustrate aspects of the disclosure and together with the detailed description serve to explain the principles of the disclosure. No attempt is made to show structural details of the disclosure in more detail than may be necessary for a fundamental understanding of the disclosure and the various ways in which it may be practiced. In the drawings: FIG. 1 illustrates a cross-sectional side view of a SiC SMD component according to the disclosure. FIG. 2 illustrates a top view of the SiC SMD according to FIG. 1. FIG. 3 illustrates a cross-sectional side view of a device implementing a SiC SMD component according to the disclosure. FIG. 4 illustrates a top view of the device implementing the SiC SMD according to FIG. 3. FIG. 5 illustrates a more detailed top view of the device implementing the SiC SMD according to FIG. 3. FIG. 6 is a photograph of a top side view of the at least one SiC SMD component according to aspects of the disclosure. FIG. 7 is a photograph of a bottom side view of the at least one SiC SMD component according to FIG. 6. FIG. 8 is a photograph of a top side view of at least one SiC SMD component and a device prior to solder reflow according to aspects of the disclosure. FIG. 9 is a photograph of a top perspective side view of the at least one SiC SMD component and the device prior to solder reflow according to FIG. 8. FIG. 10 is a photograph o