US-12620557-B2 - Plasma processing apparatus

US12620557B2US 12620557 B2US12620557 B2US 12620557B2US-12620557-B2

Abstract

A plasma processing apparatus includes a process container, a power supply configured to supply radio frequency or microwave power for generating plasma in the process container, a plurality of gas nozzles, each having a gas flow passage therein, and a plurality of protrusions formed integrally with a ceiling wall and/or a sidewall that defines the process container, the plurality of protrusions protruding from the ceiling wall and/or the sidewall. Each of the plurality of protrusions has a gas hole at a leading end of the protrusion. The ceiling wall and/or the sidewall has recesses in which the plurality of gas nozzles is arranged, respectively, such that the gas flow passage of each of the plurality of gas nozzles communicates with the gas hole of each of the plurality of protrusions.

Inventors

Syouji YAMAGISHI
Hiroki EHARA
Hiroyuki Hayashi
Jun NAKAGOMI

Assignees

TOKYO ELECTRON LIMITED

Dates

Publication Date: 20260505
Application Date: 20220527
Priority Date: 20210531

Claims (11)

1 . A plasma processing apparatus comprising: a process container; a power supply configured to supply radio frequency or microwave power for generating plasma in the process container; a plurality of gas nozzles, each having a gas flow passage therein; and a plurality of protrusions formed integrally with a ceiling wall and/or a sidewall that defines the process container, the plurality of protrusions protruding from the ceiling wall and/or the sidewall, wherein each of the plurality of protrusions has a gas hole at a leading end of the protrusion, and wherein the ceiling wall and/or the sidewall has recesses in which the plurality of gas nozzles is buried, respectively, and an outlet of each of the plurality of gas nozzles buried in the recess is connected to the gas hole of each of the plurality of protrusions at a position distanced from an outlet of the gas hole of each of the plurality of protrusions, such that the gas flow passage of each of the plurality of gas nozzles communicates with the gas hole of each of the plurality of protrusions.
2 . The plasma processing apparatus of claim 1 , wherein a length of each of the plurality of gas nozzles is longer than a thickness of the ceiling wall and/or the sidewall in which the plurality of gas nozzles is arranged.
3 . The plasma processing apparatus of claim 2 , wherein a diameter of the gas hole is larger than a diameter on an outlet side of the gas flow passage communicating with the gas hole.
4 . The plasma processing apparatus of claim 3 , wherein a length of the gas hole is 5 mm or more.
5 . The plasma processing apparatus of claim 4 , wherein a first groove for degassing is formed on an inner surface of each of the recesses and/or an outer surface of each of the plurality of gas nozzles.
6 . The plasma processing apparatus of claim 5 , wherein the first groove has a leading end groove extending from an inner side surface of each of the recesses to a bottom surface of each of the recesses and/or a leading end groove extending from an outer side surface of each of the plurality of gas nozzles to a leading end surface of each of the plurality of gas nozzles.
7 . The plasma processing apparatus of claim 6 , wherein the leading end groove formed on the leading end surface of each of the plurality of gas nozzles extends to a position radially inward than an opening of the gas hole communicating with each of the plurality of gas nozzles.
8 . The plasma processing apparatus of claim 1 , wherein a diameter of the gas hole is larger than a diameter on an outlet side of the gas flow passage communicating with the gas hole.
9 . The plasma processing apparatus of claim 1 , wherein a length of the gas hole is 5 mm or more.
10 . The plasma processing apparatus of claim 1 , wherein a first groove for degassing is formed on an inner surface of each of the recesses and/or an outer surface of each of the plurality of gas nozzles.
11 . The plasma processing apparatus of claim 1 , wherein a second groove for taking-out each of the plurality of gas nozzles is formed on an inner surface of the gas flow passage of each of the plurality of gas nozzles.

Description

CROSS-REFERENCE TO RELATED APPLICATION This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2021-091799, filed on May 31, 2021, the entire contents of which are incorporated herein by reference. TECHNICAL FIELD The present disclosure relates to a plasma processing apparatus. BACKGROUND For example, Patent Document 1 discloses a plasma processing apparatus which generates surface wave plasma by microwaves. The disclosed plasma processing apparatus includes a shower plate for supplying a first gas and a second gas into a process container. The shower plate is formed with a plurality of gas holes for supplying the first gas into the process container and a plurality of supply nozzles which protrude vertically downward from the lower surface of the shower plate at positions different from the plurality of gas holes and supply the second gas into the process container. As another example, Patent Document 2 discloses a plasma processing apparatus including a process container and a plurality of gas nozzles which protrude from a ceiling wall and/or a sidewall constituting the process container and have gas supply holes for supplying a gas into the process container. The plurality of gas nozzles have a diameter expansion portion which expands from the fine holes of the gas supply holes at the leading ends of the gas supply holes of the plurality of gas nozzles so as to open into a process space. PRIOR ART DOCUMENT Patent Documents Japanese laid-open publication No. 2014-183297Japanese laid-open publication No. 2021-064508 SUMMARY According to one embodiment of the present disclosure, there is provided a plasma processing apparatus includes a process container, a power supply configured to supply radio frequency or microwave power for generating plasma in the process container, a plurality of gas nozzles, each having a gas flow passage therein, and a plurality of protrusions formed integrally with a ceiling wall and/or a sidewall that defines the process container, the plurality of protrusions protruding from the ceiling wall and/or the sidewall. Each of the plurality of protrusions has a gas hole at a leading end of the protrusion. The ceiling wall and/or the sidewall has recesses in which the plurality of gas nozzles is arranged, respectively, such that the gas flow passage of each of the plurality of gas nozzles communicates with the gas hole of each of the plurality of protrusions. BRIEF DESCRIPTION OF DRAWINGS The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate embodiments of the present disclosure, and together with the general description given above and the detailed description of the embodiments given below, serve to explain the principles of the present disclosure. FIG. 1 is a schematic cross-sectional view showing an example of a plasma processing apparatus according to an embodiment. FIG. 2 is a diagram showing the configuration of a microwave introduction module according to an embodiment. FIG. 3 is a view showing an example of a gas nozzle according to a reference example. FIG. 4 is a view showing an example of a gas supply structure according to an embodiment. FIGS. 5A to 5D are perspective views of gas nozzles of FIG. 4. FIG. 6 is a diagram showing the correlation between a dimple depth and an electric field intensity according to an embodiment. FIG. 7 is a view for explaining installation of a gas nozzle according to an embodiment. FIGS. 8A to 8C are views for explaining a taking-out jig and taking-out method of the gas nozzle according to an embodiment. DETAILED DESCRIPTION Reference will now be made in detail to various embodiments, examples of which are illustrated in the accompanying drawings. In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure. However, it will be apparent to one of ordinary skill in the art that the present disclosure may be practiced without these specific details. In other instances, well-known methods, procedures, systems, and components have not been described in detail so as not to unnecessarily obscure aspects of the various embodiments. Hereinafter, an embodiment for carrying out the present disclosure will be described with reference to the drawings. Throughout the drawings, the same components may be denoted by the same reference numerals, and explanation thereof may not be repeated. [Plasma Processing Apparatus] An example of the configuration of a plasma processing apparatus 1 according to an embodiment will be described with reference to FIG. 1. FIG. 1 is a schematic cross-sectional view showing an example of the plasma processing apparatus 1 according to the embodiment. The plasma processing apparatus 1 according to the embodiment is an apparatus which performs predetermined processes such as a film forming process, a diffusion process, an etching process, and an