US-12620559-B2 - Gas supply device and plasma processing apparatus

Abstract

A gas supply device includes a plurality of flow ratio controllers configured to output a plurality of processing gases supplied from a gas box according to respective predetermined flow ratios; a plurality of switching valve sets connecting the plurality of flow ratio controllers to a plurality of supply pipes connected to a plurality of regions in a chamber or to a bypass pipe; a conductance control valve configured to control conductance of the bypass pipe; and a controller configured to control a processing gas output by one of the plurality of flow ratio controllers to be discharged through the bypass pipe, while a processing gas output by another of the plurality of flow ratio controllers is supplied to the plurality of regions in the chamber, wherein the controller is configured to control the conductance control valve when a processing gas supplied to the plurality of regions is switched.

Inventors

• Sohee Kim
• Kyeongtea BANG
• Hakyoung Kim
• Seungbin LIM
• Yongwoo Kim
• Junghyun Cho

Assignees

• SAMSUNG ELECTRONICS CO., LTD.

Dates

Publication Date

20260505

Application Date

20240820

Priority Date

20240214

Claims (20)

1. 1 . A gas supply device, comprising: a first flow ratio controller configured to output a first processing gas supplied from a gas box to a plurality of first output pipes according to a first flow ratio; a second flow ratio controller configured to output a second processing gas supplied from the gas box to a plurality of second output pipes according to a second flow ratio; a plurality of first supply valves connecting the plurality of first output pipes to a plurality of supply pipes connected to a plurality of regions in a chamber; a plurality of second supply valves connecting the plurality of second output pipes to the plurality of supply pipes; a plurality of first bypass valves connecting the plurality of first output pipes to a bypass pipe; a plurality of second bypass valves connecting the plurality of second output pipes to the bypass pipe; a conductance control valve configured to control conductance of the bypass pipe; and a controller configured to supply the first processing gas into the chamber at a first time point at which a processing gas supplied into the chamber is switched from the second processing gas to the first processing gas, by opening the plurality of first supply valves and the plurality of second bypass valves and to close the plurality of second supply valves and the plurality of first bypass valves, configured to supply the second processing gas into the chamber at a second time point at which a gas supplied into the chamber is switched from the first processing gas to the second processing gas, by opening the plurality of second supply valves and the plurality of first bypass valves and to close the plurality of first supply valves and the plurality of second bypass valves, and configured to control the conductance control valve to suppress changes in internal pressure of the chamber at the first time point and the second time point.
2. 2 . The gas supply device of claim 1 , wherein the controller is configured to determine an initial value of conductance of the conductance control valve by performing feedforward control based on at least a portion of factors including a type of processing gas to be switched at the first time point or the second time point, a flow rate of the processing gas to be switched, a flow ratio applied to the processing gas to be switched, a difference in flow rates between the processing gas before switching and the processing gas to be switched, internal pressure of the chamber and an opening/closing rate of a VAT valve provided in an exhaust device of the chamber.
3. 3 . The gas supply device of claim 2 , wherein the controller is configured to experimentally determine the initial value of conductance of the conductance control valve according to a combination of the factors.
4. 4 . The gas supply device of claim 2 , wherein the controller is configured to determine a function to determine an optimal adjustment value by performing machine learning using the initial value of conductance determined experimentally according to a combination of the factors.
5. 5 . The gas supply device of claim 2 , wherein the controller is configured to monitor the internal pressure of the chamber in real time according to the initial value of the conductance, and to adjust the conductance control valve to suppress changes in the internal pressure of the chamber by performing feedback control based on the internal pressure of the chamber.
6. 6 . The gas supply device of claim 2 , wherein the controller is configured to obtain the type of processing gas to be switched, the flow rate of the processing gas to be switched, and the flow ratio applied to the processing gas to be switched by referring to a process recipe.
7. 7 . The gas supply device of claim 2 , wherein the controller is configured to obtain the internal pressure of the chamber from a chamber pressure sensor of the chamber.
8. 8 . The gas supply device of claim 7 , wherein an adjustment value of conductance of the conductance control valve is determined based on an initial value of conductance determined experimentally according to a combination of the factors.
9. 9 . The gas supply device of claim 1 , wherein the controller is configured to control the conductance control valve such that conductance of the plurality of supply pipes is the same as conductance of the bypass pipe at the first time point and the second time point.
10. 10 . The gas supply device of claim 1 , wherein the plurality of regions in the chamber includes a central region vertically overlapping a central portion of a substrate disposed in the chamber, a peripheral region vertically overlapping a peripheral portion of the central region, and an outer region vertically not overlapping the substrate.
11. 11 . The gas supply device of claim 1 , wherein the gas box includes: a plurality of gas sources configured to store a plurality of processing gases including the first processing gas and the second processing gas; a plurality of flow rate controllers configured to control flow rates of the plurality of processing gases output by the plurality of gas sources; and a plurality of source valves configured to output the first processing gas output by the plurality of flow rate controllers to the first flow ratio controller and output the second processing gas output by the plurality of flow rate controllers to the second flow ratio controller.
12. 12 . The gas supply device of claim 11 , wherein the plurality of flow rate controllers are configured as mass flow controllers.
13. 13 . A gas supply device, comprising: a first flow ratio controller configured to output a first processing gas supplied from a gas box to a plurality of first output pipes according to a first flow ratio; a second flow ratio controller configured to output a second processing gas supplied from the gas box to a plurality of second output pipes according to a second flow ratio; a first switching valve set connecting the plurality of first output pipes to a plurality of supply pipes connected to a plurality of regions in a chamber or to a bypass pipe; a second switching valve set connecting the plurality of second output pipes to the plurality of supply pipes or the bypass pipe; a conductance control valve configured to control conductance of the bypass pipe; and a controller configured to control the conductance control valve such that conductance of the bypass pipe is the same as conductance of the plurality of supply pipes at a first time point at which a processing gas provided by the plurality of supply pipes is switched from the first processing gas to the second processing gas, or a second time point at which the processing gas provided by the plurality of supply pipes is switched from the second processing gas to the first processing gas.
14. 14 . The gas supply device of claim 13 , wherein the controller is configured to control the conductance control valve by performing feedforward control based on a process recipe and internal pressure of the chamber.
15. 15 . The gas supply device of claim 14 , wherein the controller is configured to control the conductance control valve by further performing feedback control based on the internal pressure of the chamber.
16. 16 . The gas supply device of claim 13 , wherein the first switching valve set includes a plurality of 3-way valves provided between the plurality of first output pipes and the plurality of supply pipes, and between the plurality of first output pipes and the bypass pipe, and wherein the second switching valve set includes a plurality of 3-way valves provided between the plurality of second output pipes and the plurality of supply pipes, and between the plurality of second output pipes and the bypass pipe.
17. 17 . The gas supply device of claim 13 , wherein the first switching valve set includes a plurality of first supply valves connecting the plurality of first output pipes to the plurality of supply pipes, and a plurality of first bypass valves provided between the plurality of first output pipes and the bypass pipe and configured to operate complementarily with the plurality of first supply valves, and wherein the second switching valve set includes a plurality of second supply valves connecting the plurality of second output pipes to the plurality of supply pipes, and a plurality of second bypass valves provided between the plurality of second output pipes and the bypass pipe and configured to operate complementarily with the plurality of second supply valves.
18. 18 . A gas supply device, comprising: a plurality of flow ratio controllers configured to output a plurality of processing gases supplied from a gas box according to a predetermined flow ratio, respectively; a plurality of switching valve sets connecting the plurality of flow ratio controllers to a plurality of supply pipes connected to a plurality of regions in a chamber or to a bypass pipe; a conductance control valve configured to control conductance of the bypass pipe; and a controller configured to control a processing gas output by one of the plurality of flow ratio controllers to be discharged through the bypass pipe, while a processing gas output by another of the plurality of flow ratio controllers is supplied to the plurality of regions in the chamber, wherein the controller is configured to perform feedforward control and feedback control over the conductance control valve based on a process recipe and pressure of the chamber at a time point at which a processing gas supplied to the plurality of regions is switched.
19. 19 . The gas supply device of claim 18 , wherein the controller is configured to control the conductance control valve such that conductance of the bypass pipe is the same as conductance of the plurality of supply pipes connected to the plurality of regions in the chamber.
20. 20 . The gas supply device of claim 18 , wherein the plurality of supply pipes are connected to a gas distribution device of a plasma processing apparatus.

Description

CROSS-REFERENCE TO RELATED APPLICATION(S) This application claims benefit of priority to Korean Patent Application No. 10-2024-0020790 filed on Feb. 14, 2024 in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety. BACKGROUND Example embodiments of the present disclosure relate to a gas supply device and a plasma processing apparatus including the same. Semiconductor devices may be manufactured using various semiconductor manufacturing processes, including deposition processes, ion implantation processes, photolithography processes, and etching processes. As semiconductor devices have been highly integrated, a line width of patterns included in semiconductor devices has decreased and aspect ratios of contacts and vias have increased. Due to the decrease in line width and/or increase in aspect ratios of contacts and vias, difficulty of a process of manufacturing a semiconductor device has increased. Plasma processing apparatus has been used in a process of manufacturing semiconductor devices. As semiconductor devices have been highly integrated, aspect ratios of patterns have increased. To form a pattern having a high aspect ratio, a plasma processing apparatus which may provide process gas having uniform plasma density in each process may be necessary. SUMMARY An example embodiment of the present disclosure provides a gas supply device which may swiftly switch processing gases for forming plasma in each process and may suppress pressure fluctuations in a chamber of a plasma processing apparatus when processing gas is switched. An example embodiment of the present disclosure provides a plasma processing apparatus which may reduce the time required for an entire process and may have improved productivity. According to an example embodiment, a gas supply device includes a first flow ratio controller configured to output a first processing gas supplied from a gas box to a plurality of first output pipes according to a first flow ratio; a second flow ratio controller configured to output a second processing gas supplied from the gas box to a plurality of second output pipes according to a second flow ratio; a plurality of first supply valves connecting a plurality of first output pipes to a plurality of supply pipes connected to the plurality of regions in a chamber; a plurality of second supply valves connecting the plurality of second output pipes to the plurality of supply pipes; a plurality of first bypass valves connecting the plurality of first output pipes to a bypass pipe; a plurality of second bypass valves connecting the plurality of second output pipes to the bypass pipe; a conductance control valve configured to control conductance of the bypass pipe; and a controller configured to supply the first processing gas into the chamber at a first time point at which a processing gas supplied into the chamber is switched from the second processing gas to the first processing gas, by opening the plurality of first supply valves and the plurality of second bypass valves and to close the plurality of second supply valves and the plurality of first bypass valves, configured to supply the second processing gas into the chamber at a second time point at which a gas supplied into the chamber is switched from the first processing gas to the second processing gas, by opening the plurality of second supply valves and the plurality of first bypass valves and to close the plurality of first supply valves and the plurality of second bypass valves, and configured to control the conductance control valve to suppress changes in internal pressure of the chamber at the first time point and the second time point. According to an example embodiment, a gas supply device includes a first flow ratio controller configured to output a first processing gas supplied from a gas box to a plurality of first output pipes according to a first flow ratio; a second flow ratio controller configured to output a second processing gas supplied from the gas box to a plurality of second output pipes according to a second flow ratio; a first switching valve set connecting the plurality of first output pipes to a plurality of supply pipes connected to a plurality of regions in a chamber or to a bypass pipe; a second switching valve set connecting the plurality of second output pipes to the plurality of supply pipes or the bypass pipe; a conductance control valve configured to control conductance of the bypass pipe; and a controller configured to control the conductance control valve such that conductance of the bypass pipe is the same as conductance of the plurality of supply pipes at a first time point at which a processing gas provided by the plurality of supply pipes is switched from the first processing gas to the second processing gas, or a second time point at which the processing gas is switched from the second processing gas to the first processing gas. According to an example