US-12620561-B2 - Plasma processing apparatus and plasma processing method

US12620561B2US 12620561 B2US12620561 B2US 12620561B2US-12620561-B2

Abstract

A plasma processing apparatus includes a processing container having an opening in a sidewall, a partition wall that covers the opening and defines an internal space communicating with an inside of the processing container, and an internal electrode that passes through the partition wall, is airtightly inserted into the internal space, and is supplied with RF power. A first gap is provided between the partition wall and the internal electrode.

Inventors

Nobuo Matsuki
Hiroyuki Matsuura
Taro Ikeda

Assignees

TOKYO ELECTRON LIMITED

Dates

Publication Date: 20260505
Application Date: 20230703
Priority Date: 20220706

Claims (11)

1 . A plasma processing apparatus comprising: a processing container having an opening in a sidewall; a partition wall configured to cover the opening and define an internal space communicating with an inside of the processing container; an internal electrode that passes through the partition wall, is airtightly inserted into the internal space, and is supplied with RF power; and an external electrode provided outside the partition wall, the external electrode being grounded, wherein a first gap is provided between the partition wall and the internal electrode.
2 . The plasma processing apparatus according to claim 1 , wherein the partition wall has an introduction opening into which the internal electrode is inserted, the plasma processing apparatus further comprises an introduction pipe having a cylindrical shape that is fixed to the partition wall and communicates internally with the introduction opening, and the internal electrode is inserted into the introduction pipe with a second gap therebetween.
3 . The plasma processing apparatus according to claim 2 , wherein the introduction pipe is connected to a gas supply pipe that supplies a purge gas to the second gap.
4 . The plasma processing apparatus according to claim 2 , wherein the first gap is narrower than the second gap.
5 . The plasma processing apparatus according to claim 2 , wherein the second gap is airtightly sealed at a lower end of the introduction pipe.
6 . The plasma processing apparatus according to claim 1 , wherein the internal electrode includes an insulating tube having a cylindrical shape and a rod-shaped electrode inserted into the insulating tube.
7 . The plasma processing apparatus according to claim 1 , wherein the external electrode is provided on each of two opposite side surfaces of the partition wall.
8 . The plasma processing apparatus according to claim 1 , further comprising: a raw material gas supply configured to supply a raw material gas to the inside of the processing container; and a reaction gas supply configured to supply a reaction gas that reacts with the raw material gas, into the internal space.
9 . The plasma processing apparatus according to claim 1 , wherein the processing container is configured to accommodate a plurality of substrates arranged in multiple tiers, and the partition wall and the internal electrode extend in a direction in which the plurality of substrates are arranged.
10 . A plasma processing method comprising: providing a plasma processing apparatus including: a processing container having an opening in a sidewall; a partition wall configured to cover the opening and define an internal space communicating with an inside of the processing container; an internal electrode that passes through the partition wall, is airtightly inserted into the internal space, and is supplied with RF power, a first gap being provided between the partition wall and the internal electrode; and an external electrode provided outside the partition wall, the external electrode being grounded, performing a plasma processing on a substrate accommodated in the processing container, wherein the plasma processing includes generating plasma from a gas supplied to the internal space by applying the RF power to the internal electrode.
11 . The plasma processing method according to claim 10 , wherein the plasma processing includes forming a conductive film on the substrate.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS The present application is based on and claims priority from Japanese Patent Application No. 2022-109299, filed on Jul. 6, 2022, with the Japan Patent Office, the disclosure of which is incorporated herein in its entirety by reference. TECHNICAL FIELD The present disclosure relates to a plasma processing apparatus and a plasma processing method. BACKGROUND A technique is known in which a vertical type plasma processing apparatus is provided with a plasma partition wall so as to cover an opening formed in a sidewall of a processing container, and plasma is generated in an internal space covered with the plasma partition wall (see, e.g., Japanese Patent Laid-Open Publication No. 2004-343017). SUMMARY A plasma processing apparatus according to an aspect of the present disclosure includes a processing container having an opening in a sidewall, a partition wall that covers the opening and defines an internal space communicating with an inside of the processing container, and an internal electrode that passes through the partition wall, is airtightly inserted into the internal space, and supplied with RF power. A first gap is provided between the partition wall and the internal electrode. The foregoing summary is illustrative only and is not intended to be in any way limiting. In addition to the illustrative aspects, embodiments, and features described above, further aspects, embodiments, and features will become apparent by reference to the drawings and the following detailed description. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view illustrating a plasma processing apparatus according to an embodiment. FIG. 2 is a horizontal cross-sectional view illustrating the plasma processing apparatus according to the embodiment. FIG. 3 is a cross-sectional view illustrating an example of a plasma generator. FIG. 4 is a schematic view illustrating an example of an internal electrode and an external electrode. FIG. 5 is a flowchart illustrating a plasma processing method according to the embodiment. FIG. 6 is a horizontal cross-sectional view illustrating a plasma processing apparatus according to a modification of the embodiment. DETAILED DESCRIPTION In the following detailed description, reference is made to the accompanying drawings, which form a part thereof. The illustrative embodiments described in the detailed description, drawings, and claims are not meant to be limiting. Other embodiments may be utilized, and other changes may be made without departing from the spirit or scope of the subject matter presented here. Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all the accompanying drawings, the same or corresponding members or components will be denoted by the same or corresponding reference numerals, and redundant descriptions thereof will be omitted. [Plasma Processing Apparatus] A plasma processing apparatus 1 according to an embodiment will be described with reference to FIGS. 1 to 4. The plasma processing apparatus 1 is a batch type apparatus that processes a plurality of (e.g., 50 to 200) substrates W at once. The substrates W are, for example, semiconductor wafers such as silicon wafers. The plasma processing apparatus 1 includes a reactor 10, a gas supply 30, a plasma generator 40, an exhauster 50, a heater 60, and a controller 90. The reactor 10 has a cylindrical shape with an open lower end and a ceiling. The inside of the reactor 10 may be depressurized. The reactor 10 functions as a processing container that accommodates therein the plurality of substrates W arranged in multiple tiers. The reactor 10 is made of, for example, quartz. A bottom flange 11 is formed at the lower end of the reactor 10. The bottom flange 11 is supported by a metal flange 21. The metal flange 21 is provided so as to sandwich an outer edge of the bottom flange 11 therebetween via a sealing member 22 such as an O-ring (FIG. 3). The metal flange 21 is made of, for example, stainless steel. A lid 12 is airtightly attached to a lower surface of the bottom flange 11 via a sealing member 13 such as an O-ring. Thus, an opening at the lower end of the reactor 10 is airtightly closed. The lid 12 is made of, for example, stainless steel. A rotary shaft 15 is provided through a central portion of the lid 12 via a magnetic fluid seal 14. The rotary shaft 15 is rotatable relative to the lid 12. The lid 12 and the rotary shaft 15 may move up and down relative to the reactor 10. A turntable 16 is provided at an upper end of the rotary shaft 15. A boat 18 is placed on the turntable 16 with a heat insulating cylinder 17 interposed therebetween. The heat insulating cylinder 17 and the boat 18 are made of, for example, quartz. The heat insulating cylinder 17 prevents heat radiation from the opening at the lower end of the reactor 10. The boat 18 may move up and down in conjunction with the lid 12. The