US-12620565-B2 - Substrate processing apparatus

US12620565B2US 12620565 B2US12620565 B2US 12620565B2US-12620565-B2

Abstract

A substrate processing apparatus includes: a processing container; a stage provided in an interior of the processing container to place a substrate on the stage; an exhaust space arranged around the stage along an inner wall of the processing container; a first exhaust path provided between a processing space above the stage and the exhaust space and having a smaller conductance than the processing space; and a second exhaust path provided between a lower space below the stage and the exhaust space and having a smaller conductance than the processing space. A processing gas supplied into the processing space is exhausted via the first exhaust path, a purge gas supplied into the lower space is exhausted via the second exhaust path, and the second exhaust path is connected to the first exhaust path or to a space that is closer to the exhaust space than the first exhaust path.

Inventors

Tatsuya Yamaguchi
Syuji Nozawa

Assignees

TOKYO ELECTRON LIMITED

Dates

Publication Date: 20260505
Application Date: 20230612
Priority Date: 20220616

Claims (8)

1 . A substrate processing apparatus, comprising: a processing container; a stage provided in an interior of the processing container to place a substrate on the stage; an exhaust space arranged around the stage along an inner wall of the processing container; a first exhaust path provided between a processing space above the stage and the exhaust space and having a smaller conductance than the processing space; and a second exhaust path provided between a lower space below the stage and the exhaust space and having a smaller conductance than the processing space, wherein a processing gas supplied into the processing space is exhausted via the first exhaust path, and a purge gas supplied into the lower space is exhausted via the second exhaust path, wherein the second exhaust path is connected to the first exhaust path or to a space that is closer to the exhaust space than the first exhaust path, wherein the first exhaust path is a space between a ring cover arranged on an annular stage cover in contact with a peripheral edge of an upper surface of the stage and a lateral surface of the stage, and a lower surface of a shower head arranged above the stage, wherein the second exhaust path is a space between a first annular exhaust blade and a second annular exhaust blade, wherein the first annular exhaust blade extends from the annular stage cover to have a first annular vertical distal end which extends parallel to the inner wall of the processing container while forming a first gap with the inner wall, and wherein the second annular exhaust blade is provided on a sidewall of the processing container at one end of the second annular exhaust blade and has a second annular vertical distal end at the other end extending parallel to the inner wall while forming a second gap with the first annular vertical distal end.
2 . The substrate processing apparatus of claim 1 , further comprising: a driver configured to move the stage up and down, wherein the driver raises a conductance of the first exhaust path by moving down the stage when the interior of the processing container is cleaned, and the ring cover is delivered from the annular stage cover to the second annular exhaust blade as the stage is moved down.
3 . The substrate processing apparatus of claim 1 , further comprising: a gas supplier configured to, in a state in which the substrate is placed on the stage, supply a first processing gas containing a first monomer and a second processing gas containing a second monomer into the processing space through a shower head arranged above the stage via different discharge ports of the shower head, and configured to form a film of a polymer of the first monomer and the second monomer on the substrate.
4 . The substrate processing apparatus of claim 3 , wherein the first monomer is isocyanate, the second monomer is amine, and the polymer formed on the substrate contains urea bonds.
5 . The substrate processing apparatus of claim 3 , wherein the first monomer is carboxylic anhydride, the second monomer is amine, and the polymer formed on the substrate contains imide bonds.
6 . The substrate processing apparatus of claim 3 , wherein the first monomer is epoxide, the second monomer is amine, and the polymer formed on the substrate contains 2-aminoethanol bonds.
7 . The substrate processing apparatus of claim 3 , wherein the first monomer is isocyanate, the second monomer is alcohol, and the polymer formed on the substrate contains urethane bonds.
8 . The substrate processing apparatus of claim 3 , wherein the first monomer is acyl halide, the second monomer is amine, and the polymer formed on the substrate contains amide bonds.

Description

CROSS-REFERENCE TO RELATED APPLICATION This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2022-097025, filed on Jun. 16, 2022, the entire contents of which are incorporated herein by reference. TECHNICAL FIELD Various aspects and embodiments of the present disclosure relate to a substrate processing apparatus. BACKGROUND There is known a technique that supplies a gas containing two types of monomers into a processing container in which a substrate is accommodated, and forms an organic film of a polymer on the substrate by a polymerization reaction between the two types of monomers. For example, there is known a technique for forming an organic film of a polymer on a substrate by a vacuum deposition polymerization reaction between an aromatic alkyl, alicyclic or aliphatic diisocyanate monomer, and an aromatic alkyl, alicyclic or aliphatic diamine monomer (see, for example, Patent Document 1). PRIOR ART DOCUMENT Patent Document Patent Document 1: International Publication No. WO2008/129925 SUMMARY According to an embodiment of the present disclosure, there is provided a substrate processing apparatus, including: a processing container; a stage provided in an interior of the processing container to place a substrate on the stage; an exhaust space arranged around the stage along an inner wall of the processing container; a first exhaust path provided between a processing space above the stage and the exhaust space and having a smaller conductance than the processing space; and a second exhaust path provided between a lower space below the stage and the exhaust space and having a smaller conductance than the processing space, wherein a processing gas supplied into the processing space is exhausted via the first exhaust path, a purge gas supplied into the lower space is exhausted via the second exhaust path, and the second exhaust path is connected to the first exhaust path or to a space that is closer to the exhaust space than the first exhaust path. BRIEF DESCRIPTION OF DRAWINGS The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate embodiments of the present disclosure, and together with the general description given above and the detailed description of the embodiments given below, serve to explain the principles of the present disclosure. FIG. 1 is a schematic cross-sectional view showing an example of a substrate processing apparatus according to an embodiment of the present disclosure. FIG. 2 is an enlarged cross-sectional view showing an example of a structure near a peripheral edge of a stage in a first embodiment. FIG. 3 is a diagram for explaining an example of a relationship between conductances of respective spaces in the first embodiment. FIG. 4 is an enlarged cross-sectional view showing an example of a structure near a peripheral edge of a stage in Comparative Example. FIG. 5 is a diagram for explaining an example of a relationship between conductances of respective spaces in the Comparative Example. FIG. 6 is a diagram showing an example of a film thickness distribution of an organic film when a flow rate of a purge gas is changed in the first embodiment. FIG. 7 is an enlarged cross-sectional view showing an example of a state near the peripheral edge of the stage during cleaning in the first embodiment. FIG. 8 is an enlarged cross-sectional view showing an example of a structure near a peripheral edge of a stage in a second embodiment. FIG. 9 is a diagram for explaining an example of a relationship between conductances of respective spaces in the second embodiment. FIG. 10 is an enlarged cross-sectional view showing an example of a state near the peripheral edge of the stage during cleaning in the second embodiment. FIG. 11 is an enlarged cross-sectional view showing another example of the structure near the peripheral edge of the stage in the second embodiment. FIG. 12 is an enlarged cross-sectional view showing an example of a structure near a peripheral edge of a stage in a third embodiment. FIG. 13 is an enlarged cross-sectional view showing an example of a state of the peripheral edge of the stage during cleaning in the third embodiment. FIG. 14 is an enlarged cross-sectional view showing another example of the structure near the peripheral edge of the stage in the third embodiment. FIG. 15 is an enlarged cross-sectional view showing another example of the state of the peripheral edge of the stage during cleaning in the third embodiment. FIG. 16 is an enlarged cross-sectional view showing another example of the structure near the peripheral edge of the stage in the third embodiment. FIG. 17 is a diagram for explaining an example of a relationship between conductances of respective spaces in another example of the third embodiment. DETAILED DESCRIPTION Embodiments of a substrate processing apparatus of the present disclosure will be described in detail below with reference to the drawings