US-12620781-B1 - Perovskite-based white or multi-wavelength laser

US12620781B1US 12620781 B1US12620781 B1US 12620781B1US-12620781-B1

Abstract

A method for manufacturing an optoelectronic device using halide perovskite layers includes providing a substrate; optionally depositing a first spacer layer on the substrate; depositing a first emission layer on the first spacer layer, if present, or on the substrate; depositing a second spacer layer on the first emission layer, depositing a second emission layer on the second spacer layer; optionally depositing a third spacer layer on the second emission layer; optionally depositing a third emission layer on the third spacer layer, if present; optionally depositing a fourth spacer layer on the third emission layer, if present; wherein the first emission layer, the second emission layer, and the third emission layer comprise a halide perovskite layer, and wherein the halide perovskite layer of the first emission layer, the second emission layer, and the third emission layer each comprises a three-dimensional halide perovskite, a two-dimensional halide perovskite, or a combination thereof.

Inventors

Saif Mabkhot Qaid
Sanad Abdullah Alsulaiman
Abdullah Saleh Aldwayyan

Assignees

KING SAUD UNIVERSITY

Dates

Publication Date: 20260505
Application Date: 20251211

Claims (6)

1 . A method for manufacturing an optoelectronic device using halide perovskite layers, the method comprising: providing a substrate; depositing a first spacer layer on the substrate; depositing a first emission layer on the first spacer layer; depositing a second spacer layer on the first emission layer; depositing a second emission layer on the second spacer layer; depositing a third spacer layer on the second emission layer; depositing a third emission layer on the third spacer layer; depositing a fourth spacer layer on the third emission layer; wherein the first emission layer, the second emission layer, and the third emission layer each comprise a halide perovskite layer; wherein the halide perovskite layer of each of the first emission layer, the second emission layer, and the third emission layer comprises a three-dimensional halide perovskite, a two-dimensional halide perovskite, or a combination thereof; wherein the steps of depositing the first spacer layer, the first emission layer, the second spacer layer, the second emission layer, the third spacer layer, the third emission layer, and the fourth spacer layer are each independently conducted via a process of thermal evaporation using a thermal evaporation vacuum chamber system; wherein the substrate is loaded onto a substrate holder of the thermal evaporation vacuum chamber system; wherein each of the first spacer layer, the second spacer layer, the third spacer layer, and the fourth spacer layer comprise polymethyl methacrylate; and wherein the halide perovskite layer of each of the first emission layer, the second emission layer, and the third emission layer comprises CsPbI 1.5 Br 1.5 , CsPbBr 3 , and CsPbCl 3 , respectively; further comprising the steps of: (a) sequentially and separately loading each of the polymethyl methacrylate of the first spacer layer, the CsPbI 1.5 Br 1.5 of the first emission layer, the polymethyl methacrylate of the second spacer layer, the CsPbBr 3 of the second emission layer, the polymethyl methacrylate of the third spacer layer, the CsPbCl 3 of the third emission layer, and the polymethyl methacrylate of the fourth spacer layer into a tungsten boat of the thermal evaporation vacuum chamber system prior to the steps of depositing the respective layers; and (b) for each of the loaded polymethyl methacrylate of the first spacer layer, the CsPbI 1.5 Br 1.5 of the first emission layer, the polymethyl methacrylate of the second spacer layer, the CsPbBr 3 of the second emission layer, the polymethyl methacrylate of the third spacer layer, the CsPbCl 3 of the third emission layer, and the polymethyl methacrylate of the fourth spacer layer, reducing a pressure within the thermal evaporation vacuum chamber system to about 10 −4 mbar or less and increasing a current of the tungsten boat to about 17 amps or more to allow the respective layers within the tungsten boat to sequentially and separately evaporate toward the substrate thereby depositing: the evaporated polymethyl methacrylate of the first spacer layer on the substrate to obtain a polymethyl methacrylate first spacer layer film on the substrate, the evaporated CsPbI 1.5 Br 1.5 of the first emission layer on the polymethyl methacrylate first spacer layer film to obtain a CsPbI 1.5 Br 1.5 first emission layer film on the polymethyl methacrylate first spacer layer film, the evaporated polymethyl methacrylate of the second spacer layer on the CsPbI 1.5 Br 1.5 first emission layer film to obtain a polymethyl methacrylate second spacer layer film on the CsPbI 1.5 Br 1.5 first emission layer film, the evaporated CsPbBr 3 of the second emission layer on the polymethyl methacrylate second spacer layer film to obtain a CsPbBr 3 second emission layer film on the polymethyl methacrylate second spacer layer film, the evaporated polymethyl methacrylate of the third spacer layer on the CsPbBr 3 second emission layer film to obtain a polymethyl methacrylate third spacer layer film on the CsPbBr 3 second emission layer film, the evaporated CsPbCl 3 of the third emission layer on the polymethyl methacrylate third spacer layer film to obtain a CsPbCl 3 third emission layer film on the polymethyl methacrylate third spacer layer film, and the evaporated polymethyl methacrylate of the fourth spacer layer on the CsPbCl 3 third emission layer film to obtain a polymethyl methacrylate fourth spacer layer film on the CsPbCl 3 third emission layer film.
2 . The method for manufacturing an optoelectronic device of claim 1 , further comprising: prior to the step of loading the polymethyl methacrylate of the second spacer layer into the tungsten boat, removing the substrate containing the CsPbI 1.5 Br 1.5 first emission layer film on the polymethyl methacrylate first spacer layer film from the thermal evaporation vacuum chamber system; placing the substrate containing the CsPbI 1.5 Br 1.5 first emission layer film on the polymethyl methacrylate first spacer layer film on a hotplate; and thermally annealing the CsPbI 1.5 Br 1.5 first emission layer film at a temperature of about 165° C. or more for about 10 minutes or more.
3 . A method for manufacturing an optoelectronic device using halide perovskite layers, the method comprising: providing a substrate; depositing a first spacer layer on the substrate; depositing a first emission layer on the first spacer layer; depositing a second spacer layer on the first emission layer; depositing a second emission layer on the second spacer layer; depositing a third spacer layer on the second emission layer; depositing a third emission layer on the third spacer layer; depositing a fourth spacer layer on the third emission layer; wherein the first emission layer, the second emission layer, and the third emission layer each comprise a halide perovskite layer; wherein the halide perovskite layer of each of the first emission layer, the second emission layer, and the third emission layer comprises a three-dimensional halide perovskite, a two-dimensional halide perovskite, or a combination thereof; wherein the steps of depositing the first spacer layer, the first emission layer, the second spacer layer, the second emission layer, the third spacer layer, the third emission layer, and the fourth spacer layer are each independently conducted via a process of thermal evaporation using a thermal evaporation vacuum chamber system; wherein the substrate is loaded onto a substrate holder of the thermal evaporation vacuum chamber system; wherein each of the first spacer layer, the second spacer layer, the third spacer layer, and the fourth spacer layer comprise a transparent polymer or a transparent metal having a refractive index that is less than, greater than, or equal to a refractive index of each of the first emission layer, the second emission layer, and the third emission layer, respectively; and wherein the halide perovskite layer of each of the first emission layer, the second emission layer, and the third emission layer comprises CsPbI 1.5 Br 1.5 , CsPbBr 3 , and CsPbCl 3 , respectively; further comprising the steps of: (a) sequentially and separately loading each of the CsPbI 1.5 Br 1.5 of the first emission layer, the transparent polymer or the transparent metal of the second spacer layer, the CsPbBr 3 of the second emission layer, the transparent polymer or the transparent metal of the third spacer layer, the CsPbCl 3 of the third emission layer, and the transparent polymer or the transparent metal of the fourth spacer layer into a tungsten boat of the thermal evaporation vacuum chamber system prior to the steps of depositing the respective layers; and (b) for each of the loaded CsPbI 1.5 Br 1.5 of the first emission layer, the transparent polymer or the transparent metal of the second spacer layer, the CsPbBr 3 of the second emission layer, the transparent polymer or the transparent metal of the third spacer layer, the CsPbCl 3 of the third emission layer, and the transparent polymer or the transparent metal of the fourth spacer layer, reducing a pressure within the thermal evaporation vacuum chamber system to about 10 −4 mbar or less and increasing a current of the tungsten boat to about 17 amps or more to allow the respective layers within the tungsten boat to sequentially and separately evaporate toward the substrate thereby depositing: the evaporated CsPbI 1.5 Br 1.5 of the first emission layer on the substrate to obtain a CsPbI 1.5 Br 1.5 first emission layer film on the substrate, the evaporated transparent polymer or the evaporated transparent metal of the second spacer layer on the CsPbI 1.5 Br 1.5 first emission layer film to obtain a transparent polymer or a transparent metal second spacer layer film on the CsPbI 1.5 Br 1.5 first emission layer film, the evaporated CsPbBr 3 of the second emission layer on the transparent polymer or the transparent metal second spacer layer film to obtain a CsPbBr 3 second emission layer film on the transparent polymer or the transparent metal second spacer layer film, the evaporated transparent polymer or the evaporated transparent metal of the third spacer layer on the CsPbBr 3 second emission layer film to obtain a transparent polymer or a transparent metal third spacer layer film on the CsPbBr 3 second emission layer film, the evaporated CsPbCl 3 of the third emission layer on the transparent polymer or the transparent metal third spacer layer film to obtain a CsPbCl 3 third emission layer film on the transparent polymer or the transparent metal third spacer layer film, and the evaporated transparent polymer or the evaporated transparent metal of the fourth spacer layer on the CsPbCl 3 third emission layer film to obtain a transparent polymer or a transparent metal fourth spacer layer film on the CsPbCl 3 third emission layer film.
4 . The method for manufacturing an optoelectronic device of claim 3 , further comprising: prior to the step of loading the polymethyl methacrylate of the second spacer layer into the tungsten boat, removing the substrate containing the CsPbI 1.5 Br 1.5 first emission layer film from the thermal evaporation vacuum chamber system; placing the substrate containing the CsPbI 1.5 Br 1.5 first emission layer film on a hotplate; and thermally annealing the CsPbI 1.5 Br 1.5 first emission layer film at a temperature range of about 165° C. or more for about 10 minutes or more.
5 . A method for manufacturing an optoelectronic device using halide perovskite layers, the method comprising: providing a substrate; depositing a first spacer layer on the substrate; depositing a first emission layer on the first spacer layer; depositing a second spacer layer on the first emission layer; depositing a second emission layer on the second spacer layer; depositing a third spacer layer on the second emission layer; depositing a third emission layer on the third spacer layer; depositing a fourth spacer layer on the third emission layer; wherein the first emission layer, the second emission layer, and the third emission layer each comprise a halide perovskite layer; wherein the halide perovskite layer of each of the first emission layer, the second emission layer, and the third emission layer comprises a three-dimensional halide perovskite, a two-dimensional halide perovskite, or a combination thereof; wherein the steps of depositing the first spacer layer, the first emission layer, the second spacer layer, the second emission layer, the third spacer layer, the third emission layer, and the fourth spacer layer are each independently conducted via a process of thermal evaporation using a thermal evaporation vacuum chamber system; wherein the substrate is loaded onto a substrate holder of the thermal evaporation vacuum chamber system; wherein each of the first spacer layer, the second spacer layer, the third spacer layer, and the fourth spacer layer comprise a transparent polymer or a transparent metal having a refractive index that is greater than or equal to a refractive index of each of the first emission layer and the second emission layer, respectively; and wherein the halide perovskite layer of each of the first emission layer, the second emission layer, and the third emission layer comprises CsPbI 1.5 Br 1.5 , CsPbBr 3 , and CsPbCl 3 , respectively; (a) sequentially and separately loading each of the CsPbI 1.5 Br 1.5 of the first emission layer, the transparent polymer or the transparent metal of the second spacer layer, the CsPbBr 3 of the second emission layer, the transparent polymer or the transparent metal of the third spacer layer, and the CsPbCl 3 of the third emission layer into a tungsten boat of the thermal evaporation vacuum chamber system prior to the steps of depositing the respective layers; and (b) for each of the loaded CsPbI 1.5 Br 1.5 of the first emission layer, the transparent polymer or the transparent metal of the second spacer layer, the CsPbBr 3 of the second emission layer, the transparent polymer or the transparent metal of the third spacer layer, and the CsPbCl 3 of the third emission layer, reducing a pressure within the thermal evaporation vacuum chamber system to about 10 −4 mbar or less and increasing a current of the tungsten boat to about 17 amps or more to allow the respective layers within the tungsten boat to sequentially and separately evaporate toward the substrate thereby depositing: the evaporated CsPbI 1.5 Br 1.5 of the first emission layer on the substrate to obtain a CsPbI 1.5 Br 1.5 first emission layer film on the substrate, the evaporated transparent polymer or the evaporated transparent metal of the second spacer layer on the CsPbI 1.5 Br 1.5 first emission layer film to obtain a transparent polymer or a transparent metal second spacer layer film on the CsPbI 1.5 Br 1.5 first emission layer film, the evaporated CsPbBr 3 of the second emission layer on the transparent polymer or the transparent metal second spacer layer film to obtain a CsPbBr 3 second emission layer film on the transparent polymer or the transparent metal second spacer layer film, the evaporated transparent polymer or the evaporated transparent metal of the third spacer layer on the CsPbBr 3 second emission layer film to obtain a transparent polymer or a transparent metal third spacer layer film on the CsPbBr 3 second emission layer film, and the evaporated CsPbCl 3 of the third emission layer on the transparent polymer or the transparent metal third spacer layer film to obtain a CsPbCl 3 third emission layer film on the transparent polymer or the transparent metal third spacer layer film.
6 . The method for manufacturing an optoelectronic device of claim 5 , further comprising: prior to the step of loading the polymethyl methacrylate of the second spacer layer into the tungsten boat, removing the substrate containing the CsPbI 1.5 Br 1.5 first emission layer film from the thermal evaporation vacuum chamber system; placing the substrate containing the CsPbI 1.5 Br 1.5 first emission layer film on a hotplate; and thermally annealing the CsPbI 1.5 Br 1.5 first emission layer film at a temperature range of about 165° C. or more for about 10 minutes or more.

Description

CROSS-REFERENCE TO RELATED APPLICATION This application is a divisional of U.S. patent application Ser. No. 19/350,268, filed on Oct. 6, 2025, the entire contents of which are incorporated herein by reference. BACKGROUND Field The disclosure of the present patent application relates to a method for manufacturing an optoelectronic device using halide perovskite layers. Description of Related Art Recently, there has been a growing interest in developing lasers that can produce multiple colors or wavelengths beyond what is possible with a single laser material. In particular, there is growing interest in red, green, and blue (RGB) lasers that could be combined to create white lasers that can cover an entire visible spectrum. These types of lasers have many potential applications including biological/chemical sensing, data storage, communication, and lighting/display technologies. Despite the promising potential of RGB lasers and multi-wavelength lasers, there are still many technical challenges that need to be overcome before they can become commercially viable. These challenges include finding suitable laser materials that can produce multiple colors simultaneously, developing efficient methods for combining different wavelengths, and reducing the cost of production. Perovskite materials have shown great potential in the field of light emission and lasers due to their excellent optical properties such as high photoluminescence quantum yield and tunable bandgap that covers the entire visible spectrum. Compositional engineering or dimensionality reduction can be used to control the bandgap, giving greater degrees of freedom in designing their optoelectronic properties. Additionally, perovskite lasers have exhibited low threshold energies and high emission efficiencies, making them promising candidates for various optoelectronic devices. Thus, a method for manufacturing an optoelectronic device using halide perovskite layers for solving the aforementioned problems is desired. SUMMARY The present subject matter relates to a method for manufacturing an optoelectronic device using halide perovskite layers which, in one embodiment, includes providing a substrate; optionally depositing a first spacer layer on the substrate; depositing a first emission layer on the first spacer layer, if present, or on the substrate; depositing a second spacer layer on the first emission layer; depositing a second emission layer on the second spacer layer; optionally depositing a third spacer layer on the second emission layer; optionally depositing a third emission layer on the third spacer layer, if present; optionally depositing a fourth spacer layer on the third emission layer, if present; wherein the first emission layer, the second emission layer, and the third emission layer each comprise a halide perovskite layer; and wherein the halide perovskite layer of each of the first emission layer, the second emission layer, and the third emission layer comprises a three-dimensional halide perovskite, a two-dimensional halide perovskite, or a combination thereof. In an embodiment, the steps of depositing the first spacer layer, the first emission layer, the second spacer layer, the second emission layer, the third spacer layer, the third emission layer, and the fourth spacer layer can each independently be conducted via a process of spin coating, dip coating, doctor blading, slot-die coating, inkjet printing, spray coating, screen printing, chemical vapor deposition, sputtering, pulsed laser deposition, or thermal evaporation. In another embodiment, the process for each of the first spacer layer, the first emission layer, the second spacer layer, the second emission layer, the third spacer layer, the third emission layer, and the fourth spacer layer can be the thermal evaporation which can use or employ a thermal evaporation vacuum chamber system. In an additional embodiment, the substrate can be loaded onto a substrate holder of the thermal evaporation vacuum chamber system. In a supplementary embodiment, the steps of optionally depositing the first spacer layer on the substrate, optionally depositing the third spacer layer on the second emission layer, optionally depositing the third emission layer on the third spacer layer, and optionally depositing the fourth spacer layer on the third emission layer can include depositing the first spacer layer on the substrate, depositing the third spacer layer on the second emission layer, depositing the third emission layer on the third spacer layer, and depositing the fourth spacer layer on the third emission layer. In a further embedment, the steps of optionally depositing the first spacer layer on the substrate, optionally depositing the third spacer layer on the second emission layer, optionally depositing the third emission layer on the third spacer layer, and optionally depositing the fourth spacer layer on the third emission layer can include omitting the depositing of the first spacer la