US-12622048-B2 - Semiconductor device with multiple sheet patterns

Abstract

A semiconductor device includes first and second sheet patterns spaced apart from each other on a first region of the substrate, a first gate electrode extending between the first and second sheet patterns, third and fourth sheet patterns spaced apart from each other on a second region of the substrate, and a second gate electrode extending between the third and fourth sheet patterns. The first gate electrode includes a first work function controlling film, which is between the first and second sheet patterns, and a first filling conductive film on the first work function controlling film. The second gate electrode includes a second work function controlling film, which is between the third and fourth sheet patterns, and a second filling conductive film on the second work function controlling film. A distance between the third and fourth sheet patterns is greater than a distance between the first and second sheet patterns.

Inventors

• Jun Mo Park
• Yeon ho Park
• Eun Sil PARK
• Jin Seok Lee
• Wang Seop LIM
• Kyu Bong Choi

Assignees

• SAMSUNG ELECTRONICS CO., LTD.

Dates

Publication Date

20260505

Application Date

20220629

Priority Date

20210923

Claims (20)

1. 1 . A semiconductor device comprising: a substrate including a first region and a second region; a first sheet pattern and a second sheet pattern on the first region of the substrate and extending in a first direction while being spaced apart from, and adjacent to, each other; a first gate electrode extending in a second direction that intersects the first direction, the first gate electrode extending between the first sheet pattern and the second sheet pattern; a third sheet pattern and a fourth sheet pattern on the second region of the substrate and extending in a third direction while being spaced apart from, and adjacent to, each other; and a second gate electrode extending in a fourth direction that intersects the third direction, the second gate electrode extending between the third sheet pattern and the fourth sheet pattern, wherein the first gate electrode includes a first work function controlling film and a first filling conductive film on the first work function controlling film, the first work function controlling film fills a gap between the first sheet pattern and the second sheet pattern, the second gate electrode includes a second work function controlling film and a second filling conductive film, the second work function controlling film fills a gap between the third sheet pattern and the fourth sheet pattern, the second filling conductive film is on the second work function controlling film, and a distance between the third sheet pattern and the fourth sheet pattern is greater than a distance between the first sheet pattern and the second sheet pattern.
2. 2 . The semiconductor device of claim 1 , wherein a thickness of the second work function controlling film between the third sheet pattern and the fourth sheet pattern is greater than a thickness of the first work function controlling film between the first sheet pattern and the second sheet pattern.
3. 3 . The semiconductor device of claim 1 , wherein in a vertical direction intersecting a top surface of the substrate, a thickness of the third sheet pattern and a thickness of the fourth sheet pattern is less than a thickness of the first sheet pattern and a thickness of the second sheet pattern.
4. 4 . The semiconductor device of claim 3 , wherein a width in the second direction of the third sheet pattern and a width in the second direction of the fourth sheet pattern are less than a width in the fourth direction of the first sheet pattern and a width in the fourth direction of the second sheet pattern.
5. 5 . The semiconductor device of claim 1 , wherein the first sheet pattern and third sheet pattern are level with each other, and the second sheet pattern and the fourth sheet pattern are level with each other.
6. 6 . The semiconductor device of claim 1 , wherein a material in the first work function controlling film is the same as a material in the second work function controlling film.
7. 7 . The semiconductor device of claim 6 , wherein a material in the first filling conductive film is the same as a material in the second filling conductive film.
8. 8 . The semiconductor device of claim 1 , further comprising: a first gate dielectric film between the first sheet pattern and the first gate electrode and between the second sheet pattern and the first gate electrode; and a second gate dielectric film between the third sheet pattern and the second gate electrode and between the fourth sheet pattern and the second gate electrode, wherein a thickness of the second gate dielectric film is greater than a thickness of the first gate dielectric film.
9. 9 . A semiconductor device comprising: a substrate including a first region and a second region; a first sheet pattern and a second sheet pattern on the first region of the substrate and extending in a first direction while being spaced apart from, and adjacent to, each other; a first gate electrode extending in a second direction that intersects the first direction, the first gate electrode extending between the first sheet pattern and the second sheet pattern; a third sheet pattern and a fourth sheet pattern on the second region of the substrate and extending in a third direction while being spaced apart from, and adjacent to, each other; and a second gate electrode extending in a fourth direction that intersects the third direction, the second gate electrode extending between the third sheet pattern and the fourth sheet pattern, wherein the first gate electrode includes a first work function controlling film and a first filling conductive film on the first work function controlling film, the first work function controlling film (i) surrounds the first sheet pattern and the second sheet pattern and (ii) fills a gap between the first sheet pattern and the second sheet pattern, the second gate electrode includes a second work function controlling film and a second filling conductive film on the second work function controlling film, the second work function controlling film (i) surrounds the third sheet pattern and the fourth sheet pattern and (ii) fills a gap between the third sheet pattern and the fourth sheet pattern, and a thickness of the second work function controlling film between the third sheet pattern and the fourth sheet patterns is greater than a thickness of the first work function controlling film between the first sheet pattern and the second sheet pattern.
10. 10 . The semiconductor device of claim 9 , wherein a distance between the third sheet pattern and the fourth sheet pattern is greater than a distance between the first sheet pattern and the second sheet pattern.
11. 11 . The semiconductor device of claim 9 , wherein in a vertical direction intersecting a top surface of the substrate, a thickness of the third sheet pattern and a thickness of the fourth sheet pattern is less than a thickness of the first sheet pattern and a thickness of the second sheet pattern.
12. 12 . The semiconductor device of claim 9 , wherein a thickness of the first work function controlling film on each of the first sheet pattern and the second sheet pattern is the same as a thickness of the second work function controlling film on each of the third sheet pattern and the fourth sheet pattern.
13. 13 . The semiconductor device of claim 9 , wherein the first work function controlling film includes a first sub-work function controlling film and a second sub-work function controlling film, which are sequentially formed on each of the first sheet pattern and the second sheet pattern, and the second work function controlling film includes a third sub-work function controlling film and a fourth sub-work function controlling film, which are sequentially formed on each of the third sheet pattern and the fourth sheet pattern.
14. 14 . The semiconductor device of claim 13 , wherein the first sub-work function controlling film and the third sub-work function controlling film include TiN, and the second sub-work function controlling film and fourth sub-work function controlling film include TiAlC.
15. 15 . A semiconductor device comprising: a substrate including a first region and a second region; a plurality of first active patterns on the first region of the substrate and extending in a first direction while being spaced apart from each other; a first gate electrode extending in a second direction that intersects the first direction, the first gate electrode extending between the plurality of first active patterns; first source/drain regions connected to the plurality of first active patterns and on side surfaces of the first gate electrode; a plurality of second active patterns on the second region of the substrate and extending in a third direction while being spaced apart from each other; and a second gate electrode extending in a fourth direction that intersects the third direction, the second gate electrode extending between the plurality of second active patterns, wherein the first gate electrode includes a first work function controlling film and a first filling conductive film on the first work function controlling film, the first work function controlling film surrounds each of the plurality of first active patterns and fills gaps between the plurality of first active patterns, the second gate electrode includes a second work function controlling film and a second filling conductive film on the second work function controlling film, the second work function controlling film surrounds each of the plurality of second active patterns and fills gaps between the plurality of second active patterns, and a distance between the plurality of second active patterns is greater than a distance between the plurality of first active patterns.
16. 16 . The semiconductor device of claim 15 , wherein in a vertical direction intersecting a top surface of the substrate, a thickness of the second active patterns is less than a thickness of the first active patterns.
17. 17 . The semiconductor device of claim 15 , wherein a material in the first work function controlling film is the same as a material in the second work function controlling film, and a material in the first filling conductive film and is the same as a material in the second filling conductive film.
18. 18 . The semiconductor device of claim 15 , wherein the second active patterns are on a same level as the first active patterns.
19. 19 . The semiconductor device of claim 15 , further comprising: second source/drain regions connected to the plurality of second active patterns and on side surfaces of the second gate electrode; an interlayer insulating film covering the first source/drain regions and the second source/drain regions on the substrate; first source/drain contacts connected to the first source/drain regions through the interlayer insulating film; and second source/drain contacts connected to the second source/drain regions through the interlayer insulating film.
20. 20 . The semiconductor device of claim 15 , wherein the first region and the second region are n-type field-effect transistor (NFET) regions.

Description

CROSS-REFERENCE TO RELATED APPLICATION This application claims priority to Korean Patent Application No. 10-2021-0125581, filed on Sep. 23, 2021, and all the benefits accruing therefrom under 35 U.S.C. § 119, the disclosure of which is incorporated herein by reference in its entirety. BACKGROUND 1. Field The present disclosure relates to a semiconductor device and/or a method of fabricating the same, and particularly, to a semiconductor device including multi-bridge channels and/or a method of fabricating the semiconductor device. 2. Description of the Related Art As a scaling technique for increasing the density of an integrated circuit device, a multi-gate transistor has been suggested in which a fin-, nanowire-, or nanosheet-type multi-channel silicon body is formed on a substrate and a gate is formed on the surface of the multi-channel silicon body. Since the multi-gate transistor uses a three-dimensional (3D) channel, scaling can be facilitated. Also, current control capability can be improved without increasing the length of the gate of the multi-gate transistor. Also, a short channel effect (SCE), which is a phenomenon where the potential of a channel region is affected by a drain voltage, can be effectively limited and/or suppressed. SUMMARY Embodiments of the present disclosure provide a semiconductor device including multi-gate transistors having a multi-threshold voltage implemented therein. Embodiments of the present disclosure also provide a method of fabricating a semiconductor device including multi-gate transistors having a multi-threshold voltage implemented therein. However, embodiments of the present disclosure are not restricted to those set forth herein. The above and other features of embodiments of the present disclosure will become more apparent to one of ordinary skill in the art to which the present disclosure pertains by referencing the detailed description of the present disclosure given below. According to an embodiment of the present disclosure, a semiconductor device may include a substrate including a first region and a second region; a first sheet pattern and a second sheet pattern on the first region of the substrate and extending in a first direction while being spaced apart from each other; a first gate electrode extending in a second direction that intersects the first direction, the first gate electrode extending between the first sheet pattern and the second sheet pattern; a third sheet pattern and a fourth sheet pattern on the second region of the substrate and extending in a third direction while being spaced apart from each other; and a second gate electrode extending in a fourth direction that intersects the third direction, the second gate electrode extending between the third sheet pattern and the fourth sheet pattern. The first gate electrode may include a first work function controlling film and a first filling conductive film on the first work function controlling film. The first work function controlling film may fill a gap between the first sheet pattern and the second sheet pattern. The second gate electrode may include a second work function controlling film and a second filling conductive film on the second work function controlling film. The second work function controlling film may fill a gap between the third sheet pattern and the fourth sheet pattern. A distance between the third sheet pattern and the fourth sheet pattern may be greater than a distance between the first sheet pattern and the second sheet pattern. According to an embodiment of the present disclosure, a semiconductor device may include a substrate including a first region and a second region; a first sheet pattern and a second sheet pattern on the first region of the substrate and extending in a first direction while being spaced apart from each other; a first gate electrode extending in a second direction that intersects the first direction, the first gate electrode extending between the first sheet pattern and the second sheet pattern; a third sheet pattern and a fourth sheet pattern on the second region of the substrate and extending in a third direction while being spaced apart from each other; and a second gate electrode extending in a fourth direction that intersects the third direction, the second gate electrode extending between the third sheet pattern and the fourth sheet pattern. The first gate electrode may include a first work function controlling film and a first filling conductive film on the first work function controlling film. The first work function controlling film may fill a gap between the first sheet pattern and the second sheet pattern. The second gate electrode may include a second work function controlling film and a second filling conductive film on the second work function controlling film. The second work function controlling film may fill a gap between the third sheet pattern and the fourth sheet pattern. A thickness of the second work function controlling f