US-12622057-B2 - Display substrate and manufacture method thereof, display apparatus

Abstract

A display substrate and a manufacture method thereof, and a display apparatus are provided. The base substrate includes a base substrate, the base substrate is provided with a plurality of pixels in an array, one pixel includes a plurality of sub-pixels, each sub-pixel includes a light-emitting device and a pixel circuit driving the light-emitting device to emit light, and the pixel circuit includes a storage capacitor, a driving transistor and a data writing transistor; the first electrode of the driving transistor receives a first power voltage; the second electrode of the driving transistor is connected to the light-emitting device; at least part of the plurality of sub-pixels includes a first via hole, and the first electrode of the data writing transistor is electrically connected to the gate electrode of the driving transistor and the active layer of the data writing transistor through the first via hole.

Inventors

• Leilei CHENG
• Cheng Xu
• Jie Liu
• Chunjie XU

Assignees

• HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
• BOE TECHNOLOGY GROUP CO., LTD.

Dates

Publication Date

20260505

Application Date

20210330

Claims (18)

1. 1 . A display substrate, comprising: a base substrate, provided with a plurality of pixels in an array, wherein at least part of the plurality of pixels comprises a plurality of sub-pixels, at least part of the plurality of sub-pixels comprises a light-emitting device and a pixel circuit configured to drive the light-emitting device, and the pixel circuit comprises a storage capacitor, a driving transistor and a data writing transistor, the driving transistor comprises an active layer, a gate electrode, a first electrode and a second electrode, the data writing transistor comprises an active layer, a gate electrode, a first electrode and a second electrode; the first electrode of the driving transistor is configured to receive a first power voltage, and the second electrode of the driving transistor is connected to the light-emitting device to control the light-emitting device to emit light, at least part of the plurality of sub-pixels comprises a first via hole, and the first electrode of the data writing transistor is electrically connected to the gate electrode of the driving transistor and the active layer of the data writing transistor through the first via hole; the gate electrode of the driving transistor comprises a main portion and an extension portion connected to the main portion, an orthographic projection of the main portion on the base substrate is overlapped with an orthographic projection of the active layer of the driving transistor on the base substrate, and the extension portion extends from the main portion, and the extension portion is electrically connected to the first electrode of the data writing transistor and the active layer of the data writing transistor through the first via hole; the display substrate further comprises: a gate insulation layer, between the gate electrode of the driving transistor and the active layer of the driving transistor, wherein the gate electrode of the driving transistor is on a side of the gate insulation layer away from the base substrate; and a first insulation layer, on a side of the gate electrode of the driving transistor away from the base substrate, wherein the first via hole penetrates the gate insulation layer and the first insulation layer; the first electrode of the data writing transistor comprises a first conductive portion and a second conductive portion that are stacked with each other in a direction perpendicular to the base substrate, and the second conductive portion is on a side of the first conductive portion away from the base substrate; the extension portion comprises a side surface intersecting the upper surface, and the second conductive portion further covers the side surface of the extension portion and contacts the side surface of the extension portion; the gate insulation layer comprises an upper surface and a side surface intersecting the upper surface of the gate insulation layer, an included angle, close to the extension portion, in included angles between the side surface of the extension portion and a plane where the upper surface of the extension portion is located is a first included angle, and an included angle, close to the extension portion, in included angles between the side surface of the gate insulation layer and the plane where the upper surface of the extension portion is located is a second included angle, the second conductive portion comprises a middle portion in direct contact with the extension portion, and an included angle, close to the extension portion, in included angles between a side surface of the middle portion and the plane where the upper surface of the extension portion is located is a third included angle; the first included angle is greater than the third included angle and the third included angle is greater than the second included angle; an effective thickness of an overlapping part between the second conductive portion and a side surface and an upper surface of the extension portion is greater than an overlapping thickness between the second conductive portion and the first conductive portion; a plurality of data lines, a detection line and a second power line, at least one column of sub-pixels is between the detection line and any one of the plurality of data lines, and the detection line is adjacent to the second power line.
2. 2 . The display substrate according to claim 1 , wherein the gate electrode of the driving transistor is on a side of the first conductive portion close to the second conductive portion and is spaced apart from the first conductive portion, and the second conductive portion is in contact with the gate electrode of the driving transistor and the first conductive portion through the first via hole; the display substrate further comprises: a connection portion which is overlapped with the extension portion in the direction perpendicular to the base substrate, and connects the first conductive portion with the active layer of the data writing transistor; the connection portion, the first conductive portion and the active layer of the data writing transistor constitute an integrated structure.
3. 3 . The display substrate according to claim 2 , wherein a material of the second conductive portion and a material of the connection portion comprise a same semiconductor material, and the semiconductor material in the first conductive portion is converted into a conductive material.
4. 4 . The display substrate according to claim 1 , wherein the first conductive portion comprises: a first sub-portion, on a first side of the extension portion, wherein the second conductive portion is in direct contact with the first sub-portion through the first via hole on the first side of the extension portion; the second conductive portion extends from the first side of the extension portion to the extension portion in the first via hole to contact at least part of an upper surface of the extension portion away from the base substrate.
5. 5 . The display substrate according to claim 4 , wherein the first conductive portion further comprises: a second sub-portion on a second side of the extension portion, wherein the second side of the extension portion is opposite to the first side of the extension portion, the second conductive portion extends in the first via hole from the first side of the extension portion to the extension portion, and extends across over the extension portion to extend to the second side of the extension portion, and the second conductive portion is in direct contact with the second sub-portion through the first via hole on the second side.
6. 6 . The display substrate according to claim 1 , wherein the storage capacitor comprises a first capacitor electrode and a second capacitor electrode; at least part of the second capacitor electrode and the first electrode of the driving transistor are in a same layer and constitute an integrated structure; and the first capacitor electrode is insulated from the second capacitor electrode, the first capacitor electrode and the active layer of the driving transistor are in a same layer and constitute an integrated structure, the second capacitor electrode and the first capacitor electrode respectively constitute two electrodes of a first capacitor of the storage capacitor.
7. 7 . The display substrate according to claim 6 , further comprising: a light shielding layer that is opaque, wherein an orthographic projection of the active layer of the driving transistor on the base substrate is in an orthographic projection of the light shielding layer on the base substrate, and the light shielding layer is electrically connected to the second capacitor electrode of the first capacitor, the light shielding layer is insulated from the first capacitor electrode of the first capacitor and at least partially overlapped with the first capacitor electrode of the first capacitor in a direction perpendicular to the base substrate to serve as a third capacitor electrode of the storage capacitor, the third capacitor electrode and the first capacitor electrode respectively constitute two electrodes of a second capacitor of the storage capacitor, and the second capacitor is connected in parallel with the first capacitor.
8. 8 . The display substrate according to claim 7 , wherein the first electrode of the driving transistor is on a side of the active layer of the driving transistor away from the base substrate, and the light shielding layer is on a side of the active layer of the driving transistor close to the base substrate.
9. 9 . The display substrate according to claim 8 , wherein the second conductive portion and the first electrode of the driving transistor are in a same layer and are made of a same material.
10. 10 . The display substrate according to claim 1 , further comprising: a signal line, wherein the signal line comprises a first layer, a second layer and a third layer that are stacked sequentially in a direction perpendicular to the base substrate and away from the base substrate, wherein the first layer is spaced apart from the second layer, the signal line further comprises a signal line via hole, and the third layer is electrically connected to the second layer and the first layer through the signal line via hole.
11. 11 . The display substrate according to claim 10 , wherein the first layer and the active layer of the driving transistor are in a same layer, the second layer and the gate electrode of the driving transistor are in a same layer and are made of a same material, and the third layer and the first electrode of the driving transistor are in a same layer and are made of a same material.
12. 12 . The display substrate according to claim 10 , wherein the first layer comprises: a first conductor portion on a first side of the second layer, wherein the third layer is in direct contact with the first conductor portion through the signal line via hole on the first side of the second layer; and the third layer extends in the signal line via hole from the first side of the first conductor portion to a second side of the first conductor portion to contact at least part of an upper surface of the second layer away from the base substrate.
13. 13 . The display substrate according to claim 12 , wherein the third layer is in direct contact with the upper surface of the second layer away from the base substrate and a side surface of the second layer intersecting the upper surface of the second layer, and the third layer is in direct contact with the first layer.
14. 14 . The display substrate according to claim 12 , wherein the first layer further comprises: a second conductor portion, on a second side of the second layer in a line width direction of the signal line, wherein the second side of the second layer is opposite to the first side of the second layer, the third layer extends in the signal line via hole from the first side of the second layer along the line width direction of the signal line, across over the second layer, to the second side of the second layer, and the third layer is in direct contact with the second conductor portion through the signal line via hole on the second side of the second layer.
15. 15 . The display substrate according to claim 14 , wherein the first layer further comprises: a semiconductor portion, overlapped with the second layer in a direction perpendicular to the base substrate, in a same layer as the active layer of the driving transistor, and constitutes an integrated structure with the first conductor portion.
16. 16 . The display substrate according to claim 10 , wherein each of the data lines is connected to the second electrode of the data writing transistor and configured to provide a data signal to the data writing transistor, wherein the signal line comprises the data line.
17. 17 . A display apparatus, comprising the display substrate according to claim 1 .
18. 18 . A manufacture method of a display substrate, comprising: providing a base substrate, forming a plurality of pixels on the base substrate, wherein at least part of the plurality of pixels comprises a plurality of sub-pixels, each of the plurality of sub-pixels comprise a light-emitting device and a pixel circuit configured to drive the light-emitting device to emit light, the pixel circuit comprises a light-emitting device, a storage capacitor, a driving transistor and a data writing transistor, each of the driving transistor and the data writing transistor comprises an active layer, a gate electrode, a first electrode and a second electrode; the first electrode of the driving transistor is configured to receive a first power voltage, and the second electrode of the driving transistor is connected to the light-emitting device to control the light-emitting device to emit light, and forming a first via hole in at least part of the plurality of sub-pixels, wherein the first electrode of the data writing transistor is electrically connected to the gate electrode of the driving transistor and the active layer of the data writing transistor through the first via hole; the gate electrode of the driving transistor comprises a main portion and an extension portion connected to the main portion, an orthographic projection of the main portion on the base substrate is overlapped with an orthographic projection of the active layer of the driving transistor on the base substrate, and the extension portion extends from the main portion, and the extension portion is electrically connected to the first electrode of the data writing transistor and the active layer of the data writing transistor through the first via hole; the display substrate further comprises: a gate insulation layer, between the gate electrode of the driving transistor and the active layer of the driving transistor, wherein the gate electrode of the driving transistor is on a side of the gate insulation layer away from the base substrate; and a first insulation layer, on a side of the gate electrode of the driving transistor away from the base substrate, wherein the first via hole penetrates the gate insulation layer and the first insulation layer; the first electrode of the data writing transistor comprises a first conductive portion and a second conductive portion that are stacked with each other in a direction perpendicular to the base substrate, and the second conductive portion is on a side of the first conductive portion away from the base substrate; the extension portion comprises a side surface intersecting the upper surface, and the second conductive portion further covers the side surface of the extension portion and contacts the side surface of the extension portion; the gate insulation layer comprises an upper surface and a side surface intersecting the upper surface of the gate insulation layer, an included angle, close to the extension portion, in included angles between the side surface of the extension portion and a plane where the upper surface of the extension portion is located is a first included angle, and an included angle, close to the extension portion, in included angles between the side surface of the gate insulation layer and the plane where the upper surface of the extension portion is located is a second included angle, the second conductive portion comprises a middle portion in direct contact with the extension portion, and an included angle, close to the extension portion, in included angles between a side surface of the middle portion and the plane where the upper surface of the extension portion is located is a third included angle; the first included angle is greater than the third included angle and the third included angle is greater than the second included angle; an effective thickness of an overlapping part between the second conductive portion and a side surface and an upper surface of the extension portion is greater than an overlapping thickness between the second conductive portion and the first conductive portion; a plurality of data lines, a detection line and a second power line, at least one column of sub-pixels is between the detection line and any one of the plurality of data lines, and the detection line is adjacent to the second power line.

Description

TECHNICAL FIELD At least one embodiment of the present disclosure relates to a display substrate and a manufacture method thereof, and a display apparatus. BACKGROUND In the display field, organic light-emitting diode (OLED) display panels have characteristics of self-illumination, high contrast, low energy consumption, wide viewing angle, fast response speed, being capable of being used in flexible panels, wide using temperature range, simple manufacture and so on, and have a broad development prospect. SUMMARY At least one embodiment of the present disclosure provides a display substrate, the display substrate comprises a base substrate, the base substrate is provided with a plurality of pixels in an array, at least part of the plurality of pixels comprise a plurality of sub-pixels, at least part of the plurality of sub-pixels comprises a light-emitting device and a pixel circuit configured to drive the light-emitting device to emit light, and the pixel circuit comprises a storage capacitor, a driving transistor and a data writing transistor, the driving transistor comprises an active layer, a gate electrode, a first electrode and a second electrode, the data writing transistor comprises an active layer, a gate electrode, a first electrode and a second electrode; the first electrode of the driving transistor is configured to receive a first power voltage, and the second electrode of the driving transistor is connected to the light-emitting device to control the light-emitting device to emit light; at least part of the plurality of sub-pixels comprises a first via hole, and the first electrode of the data writing transistor is electrically connected to the gate electrode of the driving transistor and the active layer of the data writing transistor through the first via hole. For example, in the display substrate provided by at least one embodiment of the present disclosure, the gate electrode of the driving transistor comprises a main portion and an extension portion connected to the main portion, an orthographic projection of the main portion on the base substrate is overlapped with an orthographic projection of the active layer of the driving transistor on the base substrate, and the extension portion extends from the main portion, and the extension portion is electrically connected to the first electrode of the data writing transistor and the active layer of the data writing transistor through the first via hole. For example, in the display substrate provided by at least one embodiment of the present disclosure, the first electrode of the data writing transistor comprises a first conductive portion and a second conductive portion that are stacked with each other in a direction perpendicular to the base substrate, and the second conductive portion is on a side of the first conductive portion away from the base substrate; the gate electrode of the driving transistor is on a side of the first conductive portion close to the second conductive portion and is spaced apart from the first conductive portion, and the second conductive portion is in contact with the gate electrode of the driving transistor and the first conductive portion through the first via hole; the display substrate further comprises a connection portion which is overlapped with the extension portion in the direction perpendicular to the base substrate, and connects the first conductive portion with the active layer of the data writing transistor; the connection portion, the first conductive portion and the active layer of the data writing transistor constitute an integrated structure. For example, in the display substrate provided by at least one embodiment of the present disclosure, a material of the second conductive portion and a material of the connection portion comprise a same semiconductor material, and the semiconductor material in the first conductive portion is converted into a conductive material. For example, in the display substrate provided by at least one embodiment of the present disclosure, the first conductive portion comprises a first sub-portion on a first side of the extension portion, the second conductive portion is in direct contact with the first sub-portion through the first via hole on the first side of the extension portion; the second conductive portion extends from the first side of the extension portion to the extension portion in the first via hole to contact at least part of an upper surface of the extension portion away from the base substrate. For example, in the display substrate provided by at least one embodiment of the present disclosure, the first conductive portion further comprises a second sub-portion on a second side of the extension portion, the second side of the extension portion is opposite to the first side of the extension portion, the second conductive portion extends in the first via hole from the first side of the extension portion to the extension portion, and extends across over the ext