US-12622090-B2 - Solar cell structure, method for preparing solar cell, and mask plate

US12622090B2US 12622090 B2US12622090 B2US 12622090B2US-12622090-B2

Abstract

A solar cell structure, a method for preparing a solar cell, and a mask plate. The solar cell structure includes a substrate, a first doped layer, and a plurality of first transparent conductive layers. The first doped layer is disposed on a surface of the substrate. The plurality of first transparent conductive layers are spaced apart from each other and disposed on a surface of the first doped layer away from the substrate. A region to be cut of the solar cell structure is located between two adjacent first transparent conductive layers.

Inventors

Hongwei Li
Guangtao YANG
Daming Chen
Yifeng Chen

Assignees

TRINA SOLAR CO., LTD.

Dates

Publication Date: 20260505
Application Date: 20240627
Priority Date: 20240315

Claims (11)

1 . A method for preparing a solar cell, comprising: providing a substrate, and forming a first doped layer on a surface of the substrate; forming a plurality of first transparent conductive layers spaced apart from each other on a surface of the first doped layer away from the substrate; forming a first non-conductive antireflection layer on the surface of the first doped layer away from the substrate, the first non-conductive antireflection layer being located between two adjacent first transparent conductive layers to space the two adjacent first transparent conductive layers, thereby achieving a solar cell structure; and cutting the solar cell structure along a region to be cut, wherein the region to be cut is located between the two adjacent first transparent conductive layers; wherein a size of the region to be cut between the two adjacent first transparent conductive layers is smaller than a size of the first non-conductive antireflection layer.
2 . The method according to claim 1 , wherein forming the plurality of first transparent conductive layers spaced apart from each other on the surface of the first doped layer away from the substrate comprises: forming the plurality of first transparent conductive layers on the surface of the first doped layer away from the substrate by using a mask plate; wherein the mask plate comprises a blocking strip, the blocking strip is configured to abut against the first doped layer to mask a gap region of the first doped layer located corresponding to a space between the two adjacent first transparent conductive layers, thereb exposing the gap region of the first doped layer out from the plurality of first transparent conductive layers.
3 . The method according to claim 2 , wherein the mask plate further comprises a first frame, and the first frame is configured to abut against the first doped layer to mask a margin region of the first doped layer, thereby exposing the margin region of the first doped layer out from the plurality of first transparent conductive layers.
4 . The method according to claim 1 , wherein the first non-conductive antireflection layer covers the surface of the first doped layer away from the substrate beyond the first transparent conductive layers.
5 . The method according to claim 1 , wherein the plurality of first transparent conductive layers are formed in an array, and cutting the solar cell structure along the region to be cut comprises: cutting the solar cell structure along a row direction and/or a column direction of the array.
6 . The method according to claim 1 , further comprising: forming a second doped layer on a surface of the substrate away from the first doped layer, wherein the doping type of the second doped layer is opposite to the doping type of the first doped layer; and forming at least one second transparent conductive layer on a surface of the second doped layer away from the substrate.
7 . The method according to claim 6 , further comprising: forming a second non-conductive antireflection layer on a surface of the second doped layer away from the substrate, wherein the at least one second transparent conductive layer is a plurality of second transparent conductive layers, the second non-conductive antireflection layer is located between two adjacent second transparent conductive layers to space the two adjacent second transparent conductive layers from each other; wherein a size of the region to be cut between the two adjacent second transparent conductive layers is smaller than a size of the second non-conductive antireflection layer between the two adjacent second transparent conductive layers.
8 . The method according to claim 6 , further comprising: forming a second passivation layer between the second doped layer and the substrate; and forming at least one second electrode on a side of the at least one second transparent conductive layer away from the second doped layer.
9 . The method according to claim 1 , further comprising: forming a first passivation layer between the first doped layer and the substrate; and forming first electrodes on a side of the plurality of first transparent conductive layers away from the first doped layer; wherein at least one first electrode is formed on a side of each of the plurality of first transparent conductive layers away from the first doped layer.
10 . A method for preparing a solar cell, comprising: providing a substrate; forming a first doped layer on a surface of the substrate; forming a second doped layer on a surface of the substrate away from the first doped layer, wherein the doping type of the second doped layer is opposite to the doping type of the first doped layer; forming a plurality of first transparent conductive layers spaced apart from each other on a surface of the first doped layer away from the substrate; forming a plurality of second transparent conductive layers on a surface of the second doped layer away from the substrate; forming a second non-conductive antireflection layer on a surface of the second doped layer away from the substrate, wherein the second non-conductive antireflection layer is located between two adjacent second transparent conductive layers to space the two adjacent second transparent conductive layers from each other, thereby achieving a solar cell structure; cutting the solar cell structure along a region to be cut, wherein the region to be cut is located between two adjacent first transparent conductive layers and between the two adjacent second transparent conductive layers; wherein a size of the region to be cut between the two adjacent second transparent conductive layers is smaller than a size of the second non-conductive antireflection layer between the two adjacent second transparent conductive layers.
11 . The method according to claim 10 , further comprising: forming a second passivation layer between the second doped layer and the substrate; and forming at least one second electrode on a side of the at least one second transparent conductive layer away from the second doped layer.

Description

CROSS-REFERENCE TO RELATED APPLICATION This application claims priority to Chinese patent application No. 202410301160.3, filed on Mar. 15, 2024, and titled “SOLAR CELL STRUCTURE, METHOD FOR PREPARING SOLAR CELL, AND MASK PLATE”, the content of which is hereby incorporated herein in its entirety by reference. TECHNICAL FIELD The present application relates to the field of photovoltaic technology, particularly relating to a solar cell structure, a method for preparing a solar cell, and a mask plate. BACKGROUND With the rapid development in photovoltaic technology, the conversion efficiency of crystalline silicon solar cells has been continuously increasing over the years. For instance, solar cells employing heterojunction technology (HJT) have achieved impressive conversion efficiencies of up to 26.81%. Moreover, the heterojunction back contact (HBC) solar cells, based on heterojunction structures, have set a new world record with an efficiency of 27.09% for monocrystalline silicon solar cells, attracting great attentions towards heterojunction cells. Heterojunction solar cells, as n-type double-sided cells, offer numerous advantages including simple process flow, high efficiency, low temperature coefficient, energy savings throughout the entire low-temperature process, absence of light-induced degradation (LID) and light and elevated temperature induced degradation (LeTID) issues, suitability for thinner applications, excellent performance under weak light conditions, etc. Furthermore, HJT is an ideal bottom cell technology for ultra-high efficiency silicon-based tandem cells in the future. Hence, HJT continues to be a focus of research and industry attention in the photovoltaic field. In related art, to meet the increasing power requirements of photovoltaic modules, HJT cells are cut using lasers to create half cells, which are then welded and interconnected in parallel to form photovoltaic modules. However, the laser cutting process can generate laser damage zones and mechanical fracture zones on the solar cells, resulting in loss of solar cell efficiency. SUMMARY According to an aspect of the present application, a solar cell structure includes: a substrate; a first doped layer disposed on a surface of the substrate; and a plurality of first transparent conductive layers spaced apart from each other and disposed on a surface of the first doped layer away from the substrate. A region to be cut of the solar cell structure is located between two adjacent first transparent conductive layers. In an embodiment, the first doped layer includes a gap region and a margin region, the gap region and the margin region are exposed out from the plurality of first transparent conductive layers, and the gap region is located corresponding to a space between the two adjacent first transparent conductive layers. In an embodiment, the solar cell structure further includes: a first non-conductive antireflection layer disposed on the surface of the first doped layer away from the substrate and located between the two adjacent first transparent conductive layers to space the two adjacent first transparent conductive layers from each other. The size of the region to be cut between the two adjacent first transparent conductive layers is smaller than the size of the first non-conductive antireflection layer. In an embodiment, the first non-conductive antireflection layer covers the surface of the first doped layer away from the substrate beyond the first transparent conductive layers. In an embodiment, the plurality of first transparent conductive layers are arranged in an array, and the region to be cut extends along a row direction and/or a column direction of the array. In an embodiment, the solar cell structure further includes: a second doped layer disposed on a surface of the substrate away from the first doped layer, wherein the doping type of the second doped layer is opposite to the doping type of the first doped layer; and at least one second transparent conductive layer disposed on a surface of the second doped layer away from the substrate. In an embodiment, the at least one second transparent conductive layer is a plurality of second transparent conductive layers, and a projection of the plurality of second transparent conductive layers on the substrate is in alignment with a projection of the plurality of first transparent conductive layers on the substrate. In an embodiment, the solar cell structure further includes: a second non-conductive antireflection layer disposed on a surface of the second doped layer away from the substrate and located between two adjacent second transparent conductive layers to space the two adjacent second transparent conductive layers from each other. The size of the region to be cut between the two adjacent second transparent conductive layers is smaller than the size of the second non-conductive antireflection layer between the two adjacent second transparent conductive layers. In an e