US-12622099-B2 - Semiconductor light emitting device and light emitting device package including the same

US12622099B2US 12622099 B2US12622099 B2US 12622099B2US-12622099-B2

Abstract

A semiconductor light emitting device is provided. The semiconductor light emitting device includes: a substrate structure; a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially provided on the substrate structure, wherein a hole penetrates through the first conductivity-type semiconductor layer and the active layer to expose the second conductivity-type semiconductor layer, and uneven portions are provided on a surface of the second conductivity-type semiconductor layer; a dam structure provided adjacent a portion of the light emitting structure on the substrate structure; a first electrode provided between the substrate structure and the light emitting structure, and connected to the first conductivity-type semiconductor layer; and a second electrode provided in the hole between the substrate structure and the light emitting structure, and connected to the second conductivity-type semiconductor layer. The first conductivity-type semiconductor layer extends through the light emitting structure and the dam structure.

Inventors

Youngwoo YOON

Assignees

SAMSUNG ELECTRONICS CO., LTD.

Dates

Publication Date: 20260505
Application Date: 20211014
Priority Date: 20201216

Claims (20)

1 . A semiconductor light emitting device comprising: a substrate structure comprising a conductive structure; a light emitting structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially provided on the substrate structure, wherein the first conductivity-type semiconductor layer comprises an upper surface and a lower surface, the active layer is provided on the upper surface of the first conductivity-type semiconductor layer, a hole penetrates through the first conductivity-type semiconductor layer and the active layer to expose the second conductivity-type semiconductor layer, and uneven portions are provided on a surface of the second conductivity-type semiconductor layer; a dam structure provided adjacent a portion of the light emitting structure on the substrate structure, wherein the dam structure comprises a conductivity-type semiconductor layer; a wavelength conversion portion provided on the light emitting structure and in contact with an upper surface of the dam structure; a first electrode provided between the substrate structure and the lower surface of the first conductivity-type semiconductor layer, and connected to the first conductivity-type semiconductor layer; and a second electrode provided in the hole between the substrate structure and the light emitting structure, and connected to the second conductivity-type semiconductor layer, wherein the dam structure comprises an outer side surface that is substantially perpendicular to an upper surface of the substrate structure.
2 . The semiconductor light emitting device of claim 1 , wherein the active layer extends through the light emitting structure and the dam structure, and wherein the lower surface of the first conductivity-type semiconductor layer is between the substrate structure and the upper surface of the first conductivity-type semiconductor layer.
3 . The semiconductor light emitting device of claim 1 , wherein the dam structure and the light emitting structure have substantially similar heights.
4 . The semiconductor light emitting device of claim 1 , wherein the first electrode is provided between the light emitting structure and the second electrode.
5 . The semiconductor light emitting device of claim 1 , wherein the first electrode comprises a connection electrode extending to a side of the light emitting structure, and wherein the semiconductor light emitting device further comprises an electrode pad provided on the connection electrode.
6 . The semiconductor light emitting device of claim 1 , wherein the outer side surface of the dam structure and a side surface of the wavelength conversion portion are substantially coplanar.
7 . The semiconductor light emitting device of claim 1 , wherein each of the first electrode and the second electrode extends between the substrate structure and the dam structure.
8 . The semiconductor light emitting device of claim 7 , wherein the second electrode is electrically connected to the conductive structure of the substrate structure.
9 . The semiconductor light emitting device of claim 1 , wherein a height of the dam structure is less than a height of the light emitting structure.
10 . The semiconductor light emitting device of claim 1 , wherein a width of an upper portion of the dam structure is equal to a width of a lower portion of the dam structure.
11 . A light emitting device package comprising: a package substrate including a wiring layer provided on an upper surface of the package substrate; a semiconductor light emitting device provided on the package substrate; a wavelength conversion portion provided on the semiconductor light emitting device; and a reflective resin portion provided on the package substrate adjacent the semiconductor light emitting device and the wavelength conversion portion, and in contact with the upper surface of the package substrate, wherein the semiconductor light emitting device comprises: a substrate structure comprising a conductive structure; a light emitting structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially provided on the substrate structure, wherein the first conductivity-type semiconductor layer comprises an upper surface and a lower surface, the active layer is provided on the upper surface of the first conductivity-type semiconductor layer, a hole penetrates through the first conductivity-type semiconductor layer and the active layer to expose the second conductivity-type semiconductor layer, and uneven portions are provided on a surface of the second conductivity-type semiconductor layer; a dam structure provided adjacent a portion of the light emitting structure on the substrate structure, wherein the dam structure comprises a conductivity-type semiconductor layer; a first electrode provided between the substrate structure and the lower surface of the first conductivity-type semiconductor layer, and connected to the first conductivity-type semiconductor layer; and a second electrode provided in the hole between the substrate structure and the light emitting structure and connected to the second conductivity-type semiconductor layer, wherein an external side surface of the dam structure is in contact with the reflective resin portion, and wherein a width of an upper portion of the dam structure is equal to a width of a lower portion of the dam structure.
12 . The light emitting device package of claim 11 , wherein an internal side surface of the reflective resin portion is in contact with a side surface of the wavelength conversion portion and the external side surface of the dam structure.
13 . The light emitting device package of claim 11 , wherein the first conductivity-type semiconductor layer, the active layer, and the second conductivity-type semiconductor layer extend through the dam structure and the light emitting structure.
14 . The light emitting device package of claim 13 , wherein in the dam structure, the second conductivity-type semiconductor layer has a substantially planar upper surface.
15 . The light emitting device package of claim 11 , further comprising an adhesive layer provided between the light emitting structure and the wavelength conversion portion, wherein the adhesive layer is in contact with the dam structure.
16 . A light emitting device package comprising: a package substrate; a semiconductor light emitting device provided on the package substrate; a wavelength conversion portion provided on the semiconductor light emitting device; and a reflective resin portion provided on the package substrate adjacent the semiconductor light emitting device and the wavelength conversion portion, and in contact with an upper surface of the package substrate, wherein the semiconductor light emitting device comprises: a substrate structure comprising a conductive structure; a light emitting structure comprising a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer on the substrate structure, wherein the first conductivity-type semiconductor layer comprises an upper surface and a lower surface, the active layer is provided on the upper surface of the first conductivity-type semiconductor layer provided between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer; a dam structure provided adjacent a portion of the light emitting structure on the substrate structure, wherein the dam structure comprises a conductivity-type semiconductor layer; a first electrode provided between the substrate structure and the lower surface of the first conductivity-type semiconductor layer, and connected to the first conductivity-type semiconductor layer; and a second electrode provided between the substrate structure and the light emitting structure, and connected to the second conductivity-type semiconductor layer, wherein the dam structure is provided between the light emitting structure and the reflective resin portion, and wherein a height of the dam structure is equal to or less than a height of the light emitting structure.
17 . The light emitting device package of claim 16 , wherein uneven portions are provided on an upper surface of the light emitting structure, and the dam structure has a planar upper surface.
18 . The light emitting device package of claim 16 , wherein the dam structure is connected to the light emitting structure.
19 . The light emitting device package of claim 16 , wherein the dam structure includes an outer side surface that is substantially perpendicular to an upper surface of the substrate structure.
20 . The light emitting device package of claim 16 , wherein a width of an upper portion of the dam structure is equal to a width of a lower portion of the dam structure.

Description

CROSS-REFERENCE TO RELATED APPLICATION(S) This application claims priority to Korean Patent Application No. 10-2020-0176694 filed on Dec. 16, 2020 in the Korean Intellectual Property Office, the disclosure of which is incorporated by reference herein in its entirety. BACKGROUND The present disclosure relates to a semiconductor light emitting device and a light emitting device package including the same. A semiconductor light emitting device, such as a semiconductor light emitting diode (LED), has advantages such as a long lifespan, low power consumption, fast response speeds, environmental friendliness. In particular, because such a semiconductor light emitting device has excellent luminous flux, it is attracting attention as a main light source of various products such as electric/electronic devices and lighting devices. SUMMARY Example embodiments provide a semiconductor light emitting device having improved light extraction efficiency and a light emitting device package including the semiconductor light emitting device. According to an aspect of an example embodiment, a semiconductor light emitting device includes: a substrate structure; a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially provided on the substrate structure, wherein a hole penetrates through the first conductivity-type semiconductor layer and the active layer to expose the second conductivity-type semiconductor layer, and uneven portions are provided on a surface of the second conductivity-type semiconductor layer; a dam structure provided adjacent a portion of the light emitting structure on the substrate structure; a first electrode provided between the substrate structure and the light emitting structure, and connected to the first conductivity-type semiconductor layer; and a second electrode provided in the hole between the substrate structure and the light emitting structure, and connected to the second conductivity-type semiconductor layer. The first conductivity-type semiconductor layer extends through the light emitting structure and the dam structure. According to an aspect of an example embodiment, a light emitting device package includes: a package substrate; a semiconductor light emitting device provided on the package substrate; a wavelength conversion portion provided on the semiconductor light emitting device; and a reflective resin portion provided on the package substrate adjacent the semiconductor light emitting device and the wavelength conversion portion. The semiconductor light emitting device includes: a substrate structure; a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially provided on the substrate structure, wherein a hole penetrates through the first conductivity-type semiconductor layer and the active layer to expose the second conductivity-type semiconductor layer, and uneven portions are provided on a surface of the second conductivity-type semiconductor layer; a dam structure provided adjacent a portion of the light emitting structure on the substrate structure; a first electrode provided between the substrate structure and the light emitting structure, and connected to the first conductivity-type semiconductor layer; and a second electrode provided in the hole between the substrate structure and the light emitting structure and connected to the second conductivity-type semiconductor layer. An external side surface of the dam structure is in contact with the reflective resin portion. According to an aspect of an example embodiment, a light emitting device package includes: a package substrate; a semiconductor light emitting device provided on the package substrate; a wavelength conversion portion provided on the semiconductor light emitting device; and a reflective resin portion provided on the package substrate adjacent the semiconductor light emitting device and the wavelength conversion portion. The semiconductor light emitting device includes: a light emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer provided between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer; a dam structure provided adjacent a portion of the light emitting structure; a first electrode connected to the first conductivity-type semiconductor layer; and a second electrode connected to the second conductivity-type semiconductor layer. The dam structure is provided between the light emitting structure and the reflective resin portion. BRIEF DESCRIPTION OF DRAWINGS The above and other aspects, features, and advantages will be more clearly understood from the following description, taken in conjunction with the accompanying drawings in which: FIGS. 1A and 1B are a plan vi