US-12622127-B2 - Perovskite optoelectronic device and manufacturing method therefor

US12622127B2US 12622127 B2US12622127 B2US 12622127B2US-12622127-B2

Abstract

The present invention relates to a perovskite optoelectronic device and a manufacturing method therefor. The present invention allows manufacture of a perovskite optoelectronic device with high efficiency at a low cost, as well as improving the electrical conductivity of a carbon nanotube electrode, by laying graphene oxide over conventional carbon nanotubes and may also be applied to a flexible device.

Inventors

Jin Young Kim
KiSeok CHANG
KwangHwan Ji
Min-Ah PARK
Chong Rae Park
Sae Jin SUNG

Assignees

LG DISPLAY CO., LTD.
SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Dates

Publication Date: 20260505
Application Date: 20200720
Priority Date: 20191230

Claims (9)

1 . A perovskite optoelectronic device comprising: a substrate; a lower electrode disposed over the substrate; an electron transport layer disposed over the lower electrode; a light absorption layer disposed over the electron transport layer, the light absorption layer including perovskite; a hole transport layer disposed over the light absorption layer; and an upper electrode disposed over the hole transport layer, wherein at least one of the lower electrode and the upper electrode includes graphene oxide deposited on carbon nanotubes, wherein the lower electrode includes the graphene oxide stacked over the carbon nanotubes, and wherein the carbon nanotubes in the lower electrode, the graphene oxide in the lower electrode, the electron transport layer, the light absorption layer, the hole transport layer and the upper electrode are sequentially stacked over the substrate.
2 . The perovskite optoelectronic device of claim 1 , wherein the electron transport layer comprises polyethyleneimine or a fullerene-based material.
3 . The perovskite optoelectronic device of claim 1 , wherein the hole transport layer comprises a p-type organic semiconductor or a conductive polymer material.
4 . The perovskite optoelectronic device of claim 1 , wherein the hole transport layer includes Spiro-OMETAD (2,2′,7,7′-tetrakis (N,N-di-p-methoxyphenylamino)-9,9′-spirobifluorene) and PEDOT:PSS (poly(3,4-ethylenedioxythiophene)poly(styrene sulfonate)).
5 . The perovskite optoelectronic device of claim 1 , wherein the carbon nanotubes includes a single-walled carbon nanotube.
6 . The perovskite optoelectronic device of claim 1 , wherein the upper electrode includes the graphene oxide stacked over the carbon nanotubes.
7 . The perovskite optoelectronic device of claim 1 , wherein the upper electrode includes at least one or more of platinum (Pt), gold (Au), aluminum (Al), nickel (Ni), copper (Cu), silver (Ag), indium (In), ruthenium (Ru), palladium (Pd), rhodium (Rh), iridium (Ir) and osmium (Os).
8 . The perovskite optoelectronic device of claim 4 , wherein the lower electrode, the electron transport layer, the light absorption layer, the Spiro-OMETAD, the PEDOT:PSS, the graphene oxide, and the carbon nanotubes are sequentially stacked over the substrate.
9 . The perovskite optoelectronic device of claim 1 , wherein the perovskite optoelectronic device further comprises a substrate disposed over the upper electrode.

Description

TECHNICAL FIELD The present disclosure relates to a perovskite optoelectronic device and a method for manufacturing the same. DESCRIPTION OF THE RELATED ART Recently, an organic-inorganic composite perovskite device with a high light absorption coefficient and a long-distance balanced carrier diffusion length is attracting attention as an optoelectronic device. In the organic-inorganic composite perovskite device, indium tin oxide (ITO) is used as a transparent electrode, and a metal thin film is used as a top electrode. Materials of the electrodes have excellent electrical conductivity, so that the efficiency of the optoelectronic device may be maximized. However, the materials are impractical due to an expensive cost, a complicated process thereof, and a limited production throughput. In particular, it is difficult to apply the ITO electrode to a flexible device due to limitation of mechanical durability thereof DISCLOSURE Technical Purposes Carbon materials such as graphite, graphene, carbon black, and carbon nanotubes are used as materials for the optoelectronic device to compensate for the problems of the ITO electrodes and the metal thin film. The carbon material has excellent electrical, optical, and mechanical properties, while having a low production cost, enabling a liquid phase process, and easy mass production. However, despite a fact that the carbon material has an advantage as a material for a perovskite device, the carbon material has limitations in terms of application thereof to the perovskite device. First, a carbon black and graphite mixture has low conductivity and thus a thick film made thereof is essential. Thus, the carbon black and graphite mixture may not be applied to a transparent electrode. Second, electrodes using the graphene are manufactured through chemical vapor deposition (CVD), and thus requires high cost. Thus, commercialization thereof may be not easy. Third, although it is possible to fabricate a transparent electrode using carbon nanotubes, there is a problem in that it is difficult to directly use the carbon nanotubes in the perovskite device due to high roughness of a carbon nanotube network and low electrical conductivity thereof compared to those of the ITO electrode and the metal thin film. In particular, in order to apply the carbon nanotubes to an upper electrode of the optoelectronic device, a thick film of 50 nm or greater is required. Thus, it is difficult to use the carbon nanotubes in applications such as translucent devices. A purpose of the present disclosure is to provide a perovskite optoelectronic device capable of improving electrical conductivity while using carbon nanotubes and a method for manufacturing the same. Further, a purpose of the present disclosure is to provide a perovskite optoelectronic device capable of removing a problem due to the high roughness of a carbon nanotube network and a method for manufacturing the same. Further, a purpose of the present disclosure is to provide a perovskite optoelectronic device in which carbon nanotubes are applied to an upper electrode as well as a lower electrode and thus are utilized in applications such as translucent devices, and a method for manufacturing the same. The purposes of the present disclosure are not limited to the above-mentioned purposes, and other purposes and advantages of the present disclosure that are not mentioned may be understood based on following descriptions, and more clearly understood from embodiments of the present disclosure. Further, it will be readily apparent that the purpose and advantages of the present disclosure may be realized by means and combinations thereof indicated in claims. Technical Solutions One aspect of the present disclosure provides a perovskite optoelectronic device comprising: a substrate; a lower electrode disposed over the substrate; an electron transport layer disposed over the lower electrode; a light absorption layer disposed over the electron transport layer, and including perovskite; a hole transport layer disposed over the light absorption layer; and an upper electrode disposed over the hole transport layer, wherein at least one of the lower electrode and the upper electrode includes graphene oxide stacked on the carbon nanotubes. One aspect of the present disclosure provides a method for manufacturing a perovskite optoelectronic device, the method comprising: (a) sequentially stacking a lower electrode, an electron transport layer, and a light absorption layer including perovskite on a first substrate in this order to form a first stack; (b) sequentially stacking carbon nanotubes, graphene oxide, and a hole transport layer on a second substrate in this order to form a second stack; and (c) forming the second stack in the (b) on the first stack in the (a). Technical Effects According to the present disclosure, a graphene oxide having an electron-withdrawing group (EWG) is stacked on the carbon nanotube, thereby improving the electrical condu