US-12622149-B2 - Display device including thickness compensation pattern on pixel electrode and method of manufacturing the same

US12622149B2US 12622149 B2US12622149 B2US 12622149B2US-12622149-B2

Abstract

A display device includes a first sub-pixel area and a second sub-pixel area, a first pixel electrode in the first sub-pixel area and including a sequentially stacked a first conductive layer including a metal material and a second conductive layer including tungsten oxide, a second pixel electrode in the second sub-pixel area and including a third conductive layer, the third conductive layer and the first conductive layer including a same material and a fourth conductive layer, the fourth conductive layer and the second conductive layer including a same material, a thickness compensation pattern on the second pixel electrode and including a sequentially stacked first thickness compensation layer including a first transparent conductive oxide and a sequentially stacked second thickness compensation layer including a second transparent conductive oxide, a first light emitting layer on the first pixel electrode, and a second light emitting layer on the thickness compensation pattern.

Inventors

Hyuneok Shin
JOONYONG PARK
Juhyun Lee

Assignees

SAMSUNG DISPLAY CO., LTD.

Dates

Publication Date: 20260505
Application Date: 20230509
Priority Date: 20220916

Claims (19)

1 . A display device comprising: a first sub-pixel area that emits a first light and a second sub-pixel area that emits a second light different from the first light; a first pixel electrode disposed in the first sub-pixel area on a substrate and including a first conductive layer including a metal material and a second conductive layer including tungsten oxide; a second pixel electrode disposed in the second sub-pixel area on the substrate and including: a third conductive layer, the third conductive layer and the first conductive layer including a same material; and a fourth conductive layer, the fourth conductive layer and the second conductive layer including a same material; a thickness compensation pattern disposed on the second pixel electrode and including a sequentially stacked first thickness compensation layer including a first transparent conductive oxide and a sequentially stacked second thickness compensation layer including a second transparent conductive oxide, wherein the first transparent conductive oxide includes at least one selected from a group consisting of indium zinc oxide and indium gallium zinc oxide, and the second transparent conductive oxide includes indium tin oxide; a first light emitting layer disposed on the first pixel electrode; and a second light emitting layer disposed on the thickness compensation pattern, wherein the thickness compensation pattern has an etching rate higher than an etching rate of the first pixel electrode or the second pixel electrode with respect to a same etchant.
2 . The display device of claim 1 , wherein the tungsten oxide included in the second conductive layer further includes tantalum.
3 . The display device of claim 1 , wherein the metal material includes aluminum.
4 . The display device of claim 1 , wherein a thickness of the first conductive layer is substantially equal to a thickness of the third conductive layer, and a thickness of the second conductive layer is substantially equal to a thickness of the fourth conductive layer.
5 . The display device of claim 4 , wherein a thickness of the first conductive layer is greater than a thickness of the second conductive layer and a thickness of the third conductive layer is greater than a thickness of the fourth conductive layer.
6 . The display device of claim 4 , wherein a thickness of the first transparent conductive oxide is less than a thickness of the third conductive layer.
7 . The display device of claim 4 , wherein each of a thickness of the second conductive layer and a thickness of the fourth conductive layer is greater than a thickness of the second transparent conductive oxide.
8 . The display device of claim 1 , wherein the substrate includes a third sub-pixel area that emits a third light different from the first light of the first sub-pixel area and the second light of the second sub-pixel area.
9 . The display device of claim 8 , further comprising: a third pixel electrode disposed in the third sub-pixel area; and a third light emitting layer disposed on the third pixel electrode, wherein the first light emitting layer overlaps the first sub-pixel area in a plan view, the second light emitting layer overlaps the second sub-pixel area in the plan view, and the third light emitting layer overlaps the first sub-pixel area, the second sub-pixel area, and the third sub-pixel area in the plan view.
10 . The display device of claim 8 , further comprising: a third pixel electrode disposed in the third sub-pixel area, the third pixel electrode and the first pixel electrode having a same structure.
11 . The display device of claim 8 , further comprising: a third pixel electrode disposed in the third sub-pixel area, the third pixel electrode and the second pixel electrode having a same structure; and a first thickness compensation pattern disposed on the third pixel electrode, the first thickness compensation pattern and the thickness compensation pattern having a same structure.
12 . A method of manufacturing a display device, the method comprising: sequentially forming a first conductive film including a metal material and a second conductive film including tungsten oxide on a substrate including a first sub-pixel area that emits a first light and a second sub-pixel area that emits a second light different from the first light; forming a first conductive layer and a second conductive layer sequentially stacked in the first sub-pixel area and a third conductive layer and a fourth conductive layer sequentially stacked in the second sub-pixel area by etching the first conductive film and the second conductive film through dry etching; sequentially forming a third conductive film including a first transparent conductive oxide and a fourth conductive film including a second transparent conductive oxide on the substrate, the first conductive layer and the second conductive layer in the first sub-pixel area, and the third conductive layer, and the fourth conductive layer in the second sub-pixel area, wherein the first transparent conductive oxide includes at least one selected from a group consisting of indium zinc oxide and indium gallium zinc oxide, and the second transparent conductive oxide includes indium tin oxide; forming a thickness compensation pattern comprising a first thickness compensation layer and a second thickness compensation layer sequentially stacked on the fourth conductive layer by etching the third conductive film and the fourth conductive film to remove the third conductive film and the fourth conductive film from the first sub-pixel area; forming a first light emitting layer on the second conductive layer; and forming a second light emitting layer on the fourth conductive layer, wherein the thickness compensation pattern has an etching rate higher than an etching rate of the first conductive layer or the second conductive layer with respect to a same etchant.
13 . The method of claim 12 , wherein the forming of the first thickness compensation layer and the second thickness compensation layer includes: forming a photosensitive organic layer on the third conductive layer and the fourth conductive layer; forming a photosensitive organic pattern overlapping the second sub-pixel area in a plan view by exposing the photosensitive organic layer; removing portions of the third conductive film and the fourth conductive film using the photosensitive organic pattern as a mask; and removing the photosensitive organic pattern.
14 . The method of claim 13 , wherein an upper surface of the photosensitive organic pattern has a substantially convex shape in cross-section.
15 . The method of claim 13 , wherein in the removing of portions of the third conductive film and the fourth conductive film, the first thickness compensation layer and the second thickness compensation layer are formed by remaining the third conductive film and the fourth conductive film overlapping the second sub-pixel area in the plan view.
16 . The method of claim 12 , wherein the forming of the first thickness compensation layer and the second thickness compensation layer is performed through wet etching or dry etching.
17 . The method of claim 12 , wherein the metal material includes aluminum.
18 . The method of claim 12 , wherein a thickness of the third conductive layer is greater than a thickness of the fourth conductive layer, a thickness of the first thickness compensation layer is less than a thickness of the third conductive layer, and the thickness of the fourth conductive layer is greater than a thickness of the second thickness compensation layer.
19 . An electronic device comprising: a display device; and a power supply which that provides power the display device; wherein the display device includes: a first sub-pixel area that emits a first light and a second sub-pixel area that emits a second light different from the first light; a first pixel electrode disposed in the first sub-pixel area on a substrate and including a first conductive layer including a metal material and a second conductive layer including tungsten oxide; a second pixel electrode disposed in the second sub-pixel area on the substrate and including: a third conductive layer, the third conductive layer and the first conductive layer including a same material; and a fourth conductive layer, the fourth conductive layer and the second conductive layer including a same material; a thickness compensation pattern disposed on the second pixel electrode and including a sequentially stacked first thickness compensation layer including a first transparent conductive oxide and a sequentially stacked second thickness compensation layer including a second transparent conductive oxide, wherein the first transparent conductive oxide includes at least one selected from a group consisting of indium zinc oxide and indium gallium zinc oxide, and the second transparent conductive oxide includes indium tin oxide; a first light emitting layer disposed on the first pixel electrode; and a second light emitting layer disposed on the thickness compensation pattern, and wherein the thickness compensation pattern has an etching rate higher than an etching rate of the first pixel electrode or the second pixel electrode with respect to a same etchant.

Description

CROSS-REFERENCE TO RELATED APPLICATION(S) This application claims priority to and benefits of Korean Patent Application No. 10-2022-0117090 under 35 U.S.C. § 119, filed on Sep. 16, 2022 in the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference. BACKGROUND 1. Technical Field Embodiments generally relate to a display device. Embodiments relate to a display device and method of manufacturing the same. 2. Description of the Related Art As information technology develops, the importance of display devices, which are communication media between users and information, is being highlighted. Accordingly, the use of display devices such as a liquid crystal display device, an organic light emitting display device, a plasma display device, and the like is increasing. The display device may include light emitting elements, and the light emitting elements may include a pixel electrode, a common electrode, and a light emitting layer disposed between the pixel electrode and the common electrode. In order to improve power efficiency of the light emitting elements, functional layers (for example, a hole transport layer, an electron transport layer, an auxiliary layer, and the like) may be further disposed above and below the light emitting layer. It is to be understood that this background of the technology section is, in part, intended to provide useful background for understanding the technology. However, this background of the technology section may also include ideas, concepts, or recognitions that were not part of what was known or appreciated by those skilled in the pertinent art prior to a corresponding effective filing date of the subject matter disclosed herein. SUMMARY Embodiments provide a display device capable of realizing a high resolution. Embodiments provide a method of manufacturing the display device. A display device may include a first sub-pixel area that emits a first light and a second sub-pixel area that emits a second light different from the first light; a first pixel electrode disposed in the first sub-pixel area on a substrate and including a sequentially stacked a first conductive layer including a metal material and a second conductive layer including tungsten oxide; a second pixel electrode disposed in the second sub-pixel area on the substrate and including a third conductive layer, the third conductive layer and the first conductive layer including a same material; and a fourth conductive layer, the fourth conductive layer and the second conductive layer including a same material; a thickness compensation pattern disposed on the second pixel electrode and including a sequentially stacked first thickness compensation layer including a first transparent conductive oxide and a sequentially stacked second thickness compensation layer including a second transparent conductive oxide; a first light emitting layer disposed on the first pixel electrode; and a second light emitting layer disposed on the thickness compensation pattern. In an embodiment, the tungsten oxide included in the second conductive layer may further include tantalum. In an embodiment, the metal material may include aluminum. In an embodiment, a thickness of the first conductive layer may be substantially equal to a thickness of the third conductive layer, and a thickness of the second conductive layer may be substantially equal to a thickness of the fourth conductive layer. In an embodiment, a thickness of the first conductive layer may be greater than a thickness of the second conductive layer and a thickness of the third conductive layer may be greater than a thickness of the fourth conductive layer. In an embodiment, a thickness of the first thickness compensation layer may be less than a thickness of the third conductive layer. In an embodiment, each of a thickness of the second conductive layer and a thickness of the fourth conductive layer may be greater than a thickness of the second thickness compensation layer. In an embodiment, the first transparent conductive oxide may include at least one selected from a group consisting of indium zinc oxide and indium gallium zinc oxide, and the second transparent conductive oxide may include indium tin oxide. In an embodiment, the thickness compensation pattern may have an etching rate higher than an etching rate of the first pixel electrode or the second pixel electrode with respect to a same etchant. In an embodiment, the substrate may include a third sub-pixel area that emits a third light different from the first light of the first sub-pixel area and the second light of the second sub-pixel area. In an embodiment, the display device may further include a third pixel electrode disposed in the third sub-pixel area; and a third light emitting layer disposed on the third pixel electrode. The first light emitting layer may overlap the first sub-pixel area in a plan view, the second light emitting layer may overlap the second sub-pixe