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US-12622173-B2 - Semiconductor substrate with oxide single crystal heterostructures, manufacturing method thereof and electronic device using the same

US12622173B2US 12622173 B2US12622173 B2US 12622173B2US-12622173-B2

Abstract

A semiconductor substrate with oxide single crystal heterostructures, to which a sacrificial layer, an epitaxy functional oxide thin film having a perovskite structure and a metal layer are grown on an oxide single crystal substrate, prepared another metal layer on a semiconductor substrate, and bonded the metal layer of the oxide single crystal substrate to the metal layer of the semiconductor substrate to be face each other, and separated the oxide single crystal substrate by selectively etching and removing only the sacrificial layer after the bonding.

Inventors

  • Seung Hyub BAEK
  • Jin Sang Kim
  • RUIGUANG NING
  • Jae-Hoon Han
  • Byung Chul Lee
  • Jungho YOON
  • Hyun-Cheol SONG
  • Seong Keun Kim
  • Chong Yun Kang
  • Ji-Won Choi

Assignees

  • KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Dates

Publication Date
20260505
Application Date
20220613
Priority Date
20210706

Claims (13)

  1. 1 . A semiconductor substrate assembly having oxide single crystal heterostructures, comprising: a metal layer disposed on a semiconductor substrate; and an epitaxially grown oxide single crystal thin film layer having a perovskite structure bonded to the semiconductor substrate via the metal layer, wherein the epitaxially grown oxide single crystal thin film layer has crystallinity with a full width at half maximum (FWHM) of 0.1° or below when measured by an omega rocking curve at a peak of highest diffraction peak intensity in θ−2θ mode of an X-ray diffractometer, wherein the epitaxially grown oxide single crystal thin film layer is a pore-free thin film layer composed of a perovskite piezoelectric oxide, and wherein the epitaxially grown oxide single crystal thin film layer is formed on a sacrificial layer and transferred to the metal layer bonded to the semiconductor substrate.
  2. 2 . The semiconductor substrate assembly of claim 1 , wherein the metal layer has a laminated structure in which layer A, layer B, and layer A′ are laminated in order, the layer A and the layer A′ are metal adhesion layers having a thickness of 5 to 20 nm, and the layer B is a metal bonding layer having a thickness of 20 nm to 1 μm.
  3. 3 . The semiconductor substrate assembly of claim 1 , wherein a total thickness of the metal layer is 5 to 1500 nm.
  4. 4 . The semiconductor substrate assembly of claim 1 , wherein the epitaxially grown oxide single crystal thin film layer is a thin film formed in a thickness of 10 μm or more.
  5. 5 . The semiconductor substrate assembly of claim 1 , wherein the epitaxially grown oxide single crystal thin film layer is patterned into a plurality of lattice cells.
  6. 6 . The semiconductor substrate assembly of claim 1 , wherein the metal layer has a single layer structure or a laminated structure composed of one element, or two or more elements selected from the group consisting of Au, Al, W, Ti, Cr, Pt, Cu, Ni, Mo, Ta, Nb, and La.
  7. 7 . The semiconductor substrate assembly of claim 6 , wherein the laminated structure is a structure in which layer A, layer B, and layer A′ are laminated in order, the layer A and the layer A′ are identical to or different from each other and are any one selected from the group consisting of Ti, Cu, Ni, Pt, and Cr, and the layer B is any one selected from the group consisting of Au, Mo, Ta, Nb, La, W, and CuW.
  8. 8 . An electronic device, comprising the semiconductor substrate assembly of claim 1 .
  9. 9 . The electronic device of claim 8 , wherein the semiconductor substrate assembly is applied to any one of an electric and electronic device, an optical device, a sensor, an actuator, a transducer, or a microelectromechanical system (MEMS).
  10. 10 . The semiconductor substrate assembly of claim 1 , wherein the epitaxially grown oxide single crystal thin film layer is composed of a perovskite piezoelectric oxide whose lattice constant is 0.3 to 0.45 nm.
  11. 11 . The semiconductor substrate assembly of claim 10 , wherein the perovskite piezoelectric oxide is composed of any one selected from the group consisting of Pb(Mg 1/3 , Nb 2/3 )O 3 , PbZrO 3 , PbTiO 3 , SrTiO 3 , SrRuO 3 , BaTiO 3 , and BiFeO 3 , or a solid solution thereof, or a material to which a dopant is added.
  12. 12 . The semiconductor substrate assembly of claim 10 , wherein the perovskite piezoelectric oxide comprises a piezoelectric single crystal having a perovskite-type crystal structure (ABO 3 ) with a compositional formula of Chemical Formula 1 below: [A 1−(a+1.5b) B a C b ][(MN) 1-x-y (L) y Ti x ]O 3 Chemical Formula 1 in the formula, A represents Pb or Ba, B represents at least one or more elements selected from the group consisting of Ba, Ca, Co, Fe, Ni, Sn and Sr, C represents at least one or more elements selected from the group consisting of Co, Fe, Bi, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, L has a single form composed of one element selected from Zr or Hf, or a mixed form thereof, M represents at least one or more elements selected from the group consisting of Ce, Co, Fe, In, Mg, Mn, Ni, Sc, Yb and Zn, N represents at least one or more elements selected from the group consisting of Nb, Sb, Ta and W, a, b, x, and y satisfy the following requisites: 0<a≤0.10, 0<b≤0.05, 0.05≤x≤0.58, and 0.05≤y≤0.62.
  13. 13 . The semiconductor substrate assembly of claim 12 , wherein in the formula the piezoelectric single crystal satisfies the requisites of 0.01≤a≤0.10 and 0.01≤b≤0.05.

Description

CROSS-REFERENCE TO RELATED APPLICATION This application claims priority to Korean Patent Application No. 10-2021-0088485, filed on Jul. 6, 2021 in the Korean Intellectual Property Office, the entire contents of which are hereby incorporated by reference. BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to a semiconductor substrate with oxide single crystal heterostructures, a manufacturing method thereof, and an electronic device using the same, and more specifically, to a semiconductor substrate with oxide single crystal heterostructures to which an epitaxy oxide thin film layer is bonded using a metal layer formed on a semiconductor substrate, a method of manufacturing the semiconductor substrate with oxide single crystal heterostructures in such a manner as to grow a sacrificial layer and an epitaxy oxide thin film having a perovskite structure on an oxide-single crystal substrate through vacuum deposition, then form a metal layer, prepare another metal layer on a semiconductor substrate, and bond the metal layer of the oxide single crystal substrate to the metal layer of the semiconductor substrate to be face each other, and perform separation of the oxide single crystal substrate by selectively etching and removing only the sacrificial layer after the bonding, and an electronic device using the semiconductor substrate with oxide single crystal heterostructures. Description of the Related Arts Since an oxide composed of a combination of oxygen and one or more metal ions has various kinds of functionality, it can be applied to a device, such as an electric device, an electronic device, a magnetic device, an optical device, an energy device, and so on. In general, a physical property of the oxide has most excellent when it has a single crystal form, and in case that this oxide of high quality is applied to a device, it is possible to develop an electronic instrument having epoch-making capability and ability that did not exist before. Since most electronics industries have been currently accomplished based on a silicon material, it has been very high to need technologies for combining a functional oxide of high quality with a silicon substrate. The single crystal oxide is applied to a method of manufacturing a bulk single crystal using Bridgman's method or a solid-state single crystal growth method, and so on, and a method of manufacturing a single crystal thin film with the form of an epitaxy oxide thin film using a sputtering process, a chemical vapor deposition (CVD) process, a zol-gel process, and so on. Meanwhile, in most electronics industries, since the development of technologies has been carried out on the basis of the development of devices of micro and nano scales, it would be preferable that a functional oxide to be used has the form of a thin film rather than a bulk. As a part of this effort, as disclosed in Non-Patent Document 1, it reports an effect of a buffer layer on epitaxial growth of yttria-stabilized zirconia (YSZ) deposited on SiO2/Si (001) substrate to be matched with a crystal structure of YSZ (001) shown after deposition of the YSZ buffer layer, and in addition to this, in order to form a functional oxide single crystal thin film on a silicon substrate, the development of various buffer layers, such as YSZ, SrTiO3, and so on has been carried out. However, it is problematic in that the grown epitaxy oxide thin film has a very high defective density compared to that of a silicon single crystal due to a difference in crystal structure and combination feature of atoms. Furthermore, it is very difficult to control a crystal orientation of the epitaxy oxide thin film through direct growth. For example, it is problematic in that it is impossible to deposit a perovskite functional oxide with an orientation of (110) plane or (111) plane on the Si substrate of (001) plane using a direct growth method, or even if it is deposited, crystallinity is very poor. Nevertheless, since physical properties of the functional oxide are largely influenced by the crystal orientation, a technology to form a functional oxide having various orientations on a semiconductor substrate is very important. Patent Document 1 discloses an invention relating to a method of manufacturing a semiconductor substrate and a method of manufacturing a semiconductor apparatus, and reports that it is possible to manufacture a semiconductor substrate having a single crystal semiconductor layer with favorable characteristics using a separation method with respect to the interface of a first single crystal semiconductor layer and a second single crystal semiconductor formed by a vapor-phase epitaxial growth method, although chemical mechanical polishing (CMP) treatment or heat treatment at a high temperature is not necessarily performed. In addition to this, although the other technologies to transfer an epitaxy oxide thin film have ever been reported, only a process of manufacturing a thin film a