US-12622187-B2 - Substrate processing method and substrate processing apparatus

Abstract

A substrate processing method of processing a substrate having a base film includes a loading process of loading the substrate into a processing container, a first process of performing a first plasma process in a state where the loaded substrate is held at a first position by raising substrate support pins of a stage arranged in the processing container, and a second process of performing a second plasma process while holding the substrate at a second position by lowering the substrate support pins.

Inventors

• Makoto Wada
• Nobutake KABUKI
• Ryota IFUKU
• Takashi Matsumoto

Assignees

• TOKYO ELECTRON LIMITED

Dates

Publication Date

20260505

Application Date

20211102

Priority Date

20201116

Claims (18)

1. 1 . A substrate processing method of processing a substrate having a base film, the method comprising: a loading process of loading the substrate into a processing container; a first process of performing a first plasma process in a state where the loaded substrate is held at a first position by raising substrate support pins of a stage arranged in the processing container; and a second process of performing a second plasma process while holding the substrate at a second position by lowering the substrate support pins, wherein the second process is a process of forming a target film on the base film.
2. 2 . The method of claim 1 , wherein the second position is a position at which the substrate is placed on the stage, and wherein the first position is a position at which the substrate is supported above the stage.
3. 3 . The method of claim 2 , wherein the first position is a position 2 mm or more above from the stage.
4. 4 . The method of claim 3 , wherein the first process is a process of removing an oxide formed on the base film.
5. 5 . The method of claim 4 , wherein the first process uses plasma of a hydrogen-containing gas to perform the first plasma process at a first temperature and a first pressure.
6. 6 . The method of claim 5 , wherein in the first process, a time period of the first plasma process is set to 60 seconds or less.
7. 7 . The method of claim 5 , wherein the second process uses plasma of a mixed gas including a raw material gas and a hydrogen gas to perform the second plasma process at a second temperature higher than the first temperature and a second pressure higher than the first pressure.
8. 8 . The method of claim 6 , wherein the target film is a carbon film.
9. 9 . The method of claim 8 , wherein the carbon film is a graphene film.
10. 10 . The method of claim 9 , wherein the base film is a polycrystalline silicon film.
11. 11 . The method of claim 10 , wherein the second process uses plasma of a mixed gas including a raw material gas and a hydrogen gas to perform the second plasma process at a second temperature higher than the first temperature and a second pressure higher than the first pressure.
12. 12 . The method of claim 11 , wherein the first temperature is 350 degrees C. or lower, and wherein the second temperature is 400 degrees C. or higher.
13. 13 . The method of claim 12 , further comprising, before the loading process, a pre-process of performing a plasma process while the substrate is not present in the processing container, wherein the pre-process includes a degassing process of withdrawing and removing oxygen from the processing container using the plasma of the hydrogen-containing gas.
14. 14 . The method of claim 1 , wherein the first process is a process of removing an oxide formed on the base film.
15. 15 . The method of claim 1 , wherein the first process uses plasma of a hydrogen-containing gas to perform the first plasma process at a first temperature and a first pressure.
16. 16 . The method of claim 1 , further comprising, before the loading process, a pre-process of performing a plasma process while the substrate is not present in the processing container, wherein the pre-process includes a degassing process of withdrawing and removing oxygen from the processing container using the plasma of the hydrogen-containing gas.
17. 17 . The method of claim 1 , wherein the base film is a polycrystalline silicon film.
18. 18 . A substrate processing apparatus comprising: a processing container capable of accommodating a substrate having a base film; a stage arranged in the processing container; and a controller, wherein the controller is configured to control the substrate processing apparatus so as to load the substrate into the processing container, wherein the controller is configured to control the substrate processing apparatus so as to perform a first plasma process in a state where the loaded substrate is held at a first position by raising substrate support pins of the stage, wherein the controller is configured to control the substrate processing apparatus so as to perform a second plasma process while holding the substrate at a second position by lowering the substrate support pins, and wherein the second plasma process is a process of forming a target film on the base film.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS The present application is a U.S. National Stage Entry of International Patent Application No. PCT/JP2021/040317, filed Nov. 2, 2021, which claims the benefit of priority to Japanese Patent Application No. 2020-190166, filed Nov. 16, 2020, each of which is hereby incorporated herein by reference in its entirety. TECHNICAL FIELD The present disclosure relates to a substrate processing method and a substrate processing apparatus. BACKGROUND In recent years, a graphene film has been proposed as a new thin-film barrier layer material to replace a metal nitride film. A graphene film formation technology has been proposed to use, for example, a microwave plasma chemical vapor deposition (CVD) apparatus to form a graphene film at a high radical density and a low electron temperature, thereby directly forming a graphene film on a silicon substrate, an insulating film, etc. (for example, Patent Document 1). Further, it has also been known to perform wet cleaning using, for example, a diluted hydrofluoric acid solution in order to remove a natural oxide film adhered to a substrate surface before film formation (for example, Patent Document 2). PRIOR ART DOCUMENTS Patent Documents Patent 1: Japanese Patent Laid-Open Publication No. 2019-055887Patent 2: Japanese Patent Laid-Open Publication No. 2004-152862 The present disclosure provides a substrate processing method and a substrate processing apparatus capable of forming a high-quality and low-defect film. SUMMARY According to one embodiment of the present disclosure, there is provided a substrate processing method of processing a substrate having a base film, the method including a loading process of loading the substrate into a processing container, a first process of performing a first plasma process in a state where the loaded substrate is held at a first position by raising substrate support pins of a stage arranged in the processing container, and a second process of performing a second plasma process while holding the substrate at a second position by lowering the substrate support pins. According to the present disclosure, it is possible to form a high-quality and low-defect film. BRIEF DESCRIPTION OF DRAWINGS FIG. 1 is a diagram illustrating an example of a substrate processing apparatus according to a first embodiment of the present disclosure. FIG. 2 is a diagram illustrating an example of a configuration of a microwave introduction device according to the first embodiment. FIG. 3 is a diagram illustrating an example of a state of a substrate after formation of a metal film according to the first embodiment. FIG. 4 is a diagram illustrating an example of a state of a substrate when wet cleaning is performed. FIG. 5 is a diagram illustrating an example of a substrate position in an etching process according to the first embodiment. FIG. 6 is a diagram illustrating an example of a substrate position in a film forming process according to the first embodiment. FIG. 7 is a diagram schematically illustrating a bubbling phenomenon. FIG. 8 is a diagram illustrating an example of the temperature dependence of the bubbling phenomenon and an etching rate. FIG. 9 is a flowchart illustrating an example of a film forming process according to the first embodiment. FIG. 10 is a diagram illustrating an example of a state of the substrate after formation of a graphene film according to the first embodiment. FIG. 11 is a diagram illustrating an example of a state of the substrate after formation of a graphene film according to a comparative example. FIG. 12 is a flowchart illustrating an example of a film forming process according to a second embodiment of the present disclosure. FIG. 13 is a diagram illustrating an example of a change in the luminous intensity of OH radicals according to the second embodiment. FIG. 14 is a diagram illustrating an example of a substrate processing apparatus according to a third embodiment of the present disclosure. DETAILED DESCRIPTION Hereinafter, embodiments of a substrate processing method and a substrate processing apparatus disclosed herein will be described in detail with reference to the drawings. In addition, the disclosed technology is not limited by the following embodiments. Conventionally, a metal nitride film (for example, TiN) has been used as a thin-film barrier layer material. On the other hand, graphene is a two-dimensional crystal structure with a carbon six-membered ring structure, and has a dense and flat atomic structure, high thermal conductivity, and chemical and physical stabilities. For example, in a case where a microwave plasma CVD apparatus is used to form a graphene film on polycrystalline silicon (Poly-Si: hereinafter also referred to as polysilicon), it is necessary to remove a natural oxide film adhered to a surface. It has been known that the natural oxide film is removed by wet cleaning as described above, but the surface of a cleaned substrate is re-oxidized due to ex