US-12622209-B2 - Supporting unit and apparatus for treating substrate

US12622209B2US 12622209 B2US12622209 B2US 12622209B2US-12622209-B2

Abstract

Provided is a supporting unit supporting a substrate. The supporting unit may include: a plate; heating elements provided to the plate and controlling a temperature of a substrate, wherein the heating elements are arranged to control temperatures of different areas of the substrate; and a power supply module supplying power to the heating element, and the power supply module may be configured to continuously supply the power to at least two heating elements of the heating elements.

Inventors

Tae Dong PARK
Chung Woo Lee

Assignees

SEMES CO., LTD.

Dates

Publication Date: 20260505
Application Date: 20220825
Priority Date: 20210827

Claims (4)

1 . A supporting unit supporting a substrate, comprising: a plate; heating elements in the plate, the heating elements being configured to control a temperature of a substrate, the heating elements being arranged to control temperatures of different areas of the substrate; and a power supply module configured to supply power to the heating elements, wherein the power supply module is configured to always supply the power to at least two heating elements of the heating elements, wherein the power supply module including: a power supply configured to generate the power; power supply lines connected to power supply stages for the heating elements; power return lines connected to power return stages of the heating elements; each of the heating elements do not share a same one of the power supply lines and power return lines; supply switches installed in the power supply lines, respectively; return switches installed in the power return lines, respectively; a first input unit configured to receive a first control signal for controlling the supply switches from a controller; a second input unit configured to receive a second control signal for controlling the return switch from the controller; a determination unit that is configured to receive the control signal received by the second input unit and outputs an On signal again when the received signals include at least two On signals; and a gate unit configured to receive the signal output by the determination unit and the signal input into the first input unit, and wherein the gate unit includes AND gates corresponding to the supply switches, respectively, and the AND gates receive the signal input into the first input unit and an output signal output by the determination unit.
2 . The supporting unit of claim 1 , wherein a rectifier is installed at a rear stage of the heating elements.
3 . An apparatus for treating a substrate, the apparatus comprising: a chamber defining a treating space in which a substrate is treated therein; and a support configured to support and heat the substrate in the treating space, wherein the support includes a plate, heating elements provided to the plate and heating the substrate, wherein the heating elements are arranged to control temperatures of different areas of the substrate, and a power supply module configured to supply power to the heating elements, and the power supply module is configured to always supply the power to at least two heating elements of the heating elements, wherein the power supply module including: a power supply configured to generate the power; power supply lines connected to power supply stages for the heating elements; power return lines connected to power return stages of the heating elements; each of the heating elements do not share a same one of the power supply lines and power return lines; supply switches installed in the power supply lines, respectively; return switches installed in the power return lines, respectively; a first input unit configured to receive a first control signal for controlling the supply switches from a controller; a second input unit configured to receive a second control signal for controlling the return switch from the controller; a determination unit that is configured to receive the control signal received by the second input unit and outputs an On signal again when the received signals include at least two On signals; and a gate unit configured to receive the signal output by the determination unit and the signal input into the first input unit, and wherein the gate unit includes AND gates corresponding to the supply switches, respectively, and the AND gates receive the signal input into the first input unit and an output signal output by the determination unit.
4 . An apparatus for treating a substrate, the apparatus comprising: a chamber defining a treating space in which a substrate is treated therein; a support configured to support the substrate in the treating space; a plasma source configured to generate plasma for treating the substrate in the treating space; and a controller, wherein the supporting includes a plate, heating elements in the plate and configured to heat the substrate, the heating elements are being arranged to control temperatures of different areas of the substrate, and a power supply module configured to supply power to the heating elements, and the power supply module is configured to continuously always supply the power to at least two heating elements of the heating elements, wherein the power supply module includes, a power supply configured to generate power applied to the heating elements, power supply lines connected to power supply stages of the heating elements, power return lines connected to power return stages of the heating elements, supply switches installed in the power supply lines, respectively, return switches installed in the power return lines, respectively, a first input unit configured to receive a first control signal for controlling the supply switches from the controller, a second input unit configured to receive a second control signal for controlling the return switches from the controller, a determination unit configured to receive the control signal received by the second input unit and outputs an On signal again when the received signals include at least two On signals, and a gate unit configured to receive the signal output by the determination unit and the signal input by the first input unit, each of the heating elements is connected to any one of the power supply lines and any one of the power return lines, and the heating elements do not share a same power supply line and power return line.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS This application claims priority to and the benefit of the Korean Patent Application No. 10-2021-0113963 filed in the Korean Intellectual Property Office on Aug. 27, 2021, the entire contents of which are incorporated herein by reference. TECHNICAL FIELD The present invention relates to a supporting unit and an apparatus for treating a substrate, and more particularly, to a supporting unit capable of controlling a temperature a supported substrate and a substrate treating apparatus including the same. BACKGROUND ART Plasma is generated by a very high temperature, a strong electric field, or RF electromagnetic fields, and means an ionized gas condition consisting of ions, electrons, radicals and the like. In a semiconductor device manufacturing process, various processes are performed using plasma. For example, the semiconductor device manufacturing process can include an etching process of removing a thin film on a substrate by using plasma or a deposition process of depositing a film on the substrate by using the plasma. As such, a plasma substrate treating apparatus that treats a substrate such as a wafer by using the plasma requires accuracy which allows substrate treatment to be precisely performed, repetition reproducibility which allows a treatment degree to be constant between the substrates in spite of treating multiple substrates, and uniformity which allows the treatment degree to be uniform in an entire area of a single substrate. Meanwhile, with the development of semiconductor device manufacturing technology, there is a trend that a diameter of the substrate which is a treated object increases, and there is a trend that a critical dimension (CD) of a pattern formed on the substrate gradually decreases. Enlargement of the substrate and minuteness of the pattern make securing treatment uniformity for the substrate be difficult. SUMMARY OF THE INVENTION The present invention has been made in an effort to provide a supporting unit and an apparatus for treating a substrate capable of efficiently treating a substrate. Further, the present invention has been made in an effort to provide a supporting unit and a substrate treating apparatus capable of improving uniformity of the substrate treatment. Further, the present invention has been made in an effort to provide a supporting unit and an apparatus for treating a substrate configured for two or more heating elements to operate continuously. Further, has been made in an effort to provide a supporting unit and a substrate treating apparatus capable of independently heating the substrate according to an area of the substrate without a complex connection structure. The effects of the present disclosure are not limited to the aforementioned effect, and other effects, which are not mentioned above, will be apparent to a person having ordinary skill in the art from the following disclosure. An exemplary embodiment of the present invention provides a supporting unit supporting a substrate. The supporting unit may include: a plate; heating elements provided to the plate and controlling a temperature of a substrate, wherein the heating elements are arranged to control temperatures of different areas of the substrate; and a power supply module supplying power to the heating element, and the power supply module may be configured to continuously supply the power to at least two heating elements of the heating elements. According to an exemplary embodiment, the power supply module may include a power supply generating the power, a power supply line connected to power supply stages of the heating elements, and a power return line connected to power return stages of the heating elements. According to an exemplary embodiment, the power supply line and the power return lines may be provided in plural, each of the heating elements may be connected to any one of the power supply lines and any one of the power return lines, and the heating elements may not share the same power supply line and power return line. According to an exemplary embodiment, the power supply module may include a supply switch installed in the power supply line, and a return switch installed in the power return line. According to an exemplary embodiment, the supply switch and the return switch may be provided in plural, the supply switches may be installed in the power supply lines, respectively, and the return switches may be installed in the power return lines, respectively. According to an exemplary embodiment, the power supply module may include a first input unit receiving a control signal for controlling the supply switch from a controller, and a second input unit receiving a control signal for controlling the return switch from the controller. According to an exemplary embodiment, the power supply module may include a determination unit that receives the controls signals received by the second input unit and outputs an On signal again when the received