US-12622225-B2 - Member for semiconductor manufacturing apparatus

US12622225B2US 12622225 B2US12622225 B2US 12622225B2US-12622225-B2

Abstract

A member for semiconductor manufacturing apparatus includes a ceramic plate in which an electrode is embedded; a power feeder receiving hole extending from a lower surface of the ceramic plate to a position close to the electrode; a power feeder inserted in the power feeder receiving hole; a recess extending from a bottom surface of the power feeder receiving hole to the electrode or an electrode lead-out portion attached to the electrode, the recess having an opening diameter smaller than a diameter of the power feeder receiving hole and greater than or equal to a diameter of the power feeder; a first brazing material layer filling the recess; and a second brazing material layer bonding an entire end surface of the power feeder to the first brazing material layer and not extending to a boundary between the bottom surface and a side surface of the power feeder receiving hole.

Inventors

Tatsuya Kuno
Seiya Inoue

Assignees

NGK INSULATORS, LTD.

Dates

Publication Date: 20260505
Application Date: 20231116

Claims (6)

1 . A member for semiconductor manufacturing apparatus comprising: a ceramic plate having a wafer placement surface on an upper surface and in which an electrode is embedded; a power feeder receiving hole extending from a lower surface of the ceramic plate to a position close to the electrode; a power feeder inserted in the power feeder receiving hole with a gap therebetween; a recess extending from a bottom surface of the power feeder receiving hole to the electrode or an electrode lead-out portion attached to the electrode, the recess having an opening diameter smaller than a diameter of the power feeder receiving hole and greater than or equal to a diameter of the power feeder; a first brazing material layer filling the recess; and a second brazing material layer bonding an entire end surface of the power feeder to the first brazing material layer and not extending to a boundary between the bottom surface and a side surface of the power feeder receiving hole.
2 . The member for semiconductor manufacturing apparatus according to claim 1 , wherein the boundary is chamfered, and the second brazing material layer does not extend to the chamfered boundary.
3 . The member for semiconductor manufacturing apparatus according to claim 1 , wherein the power feeder is chamfered to less than or equal to C0.3 or less than or equal to R0.3 at an edge of the end surface.
4 . The member for semiconductor manufacturing apparatus according to claim 1 , wherein the first brazing material layer contains an active metal, and the second brazing material layer contains no active metal or less active metal content than the first brazing material layer.
5 . The member for semiconductor manufacturing apparatus according to claim 4 , wherein an interface between the first brazing material layer and the second brazing material layer is an area where components of the first brazing material layer and components of the second brazing material layer are diffused.
6 . The member for semiconductor manufacturing apparatus according to claim 1 , further comprising: a cooling plate having electrical conductivity and located adjacent to a lower surface of the ceramic plate; and a cooling plate through hole extending through the cooling plate in an up-down direction to be in communication with the power feeder receiving hole and through which the power feeder is inserted.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a member for semiconductor manufacturing apparatus. 2. Description of the Related Art Semiconductor manufacturing apparatus includes a member for semiconductor manufacturing apparatus such as a ceramic heater for heating wafers and an electrostatic chuck for attracting and holding wafers. Regarding a member for semiconductor manufacturing apparatus of this type, PTL 1 discloses a structure of bonding a power feeder to an electrode embedded in a ceramic plate. Specifically, the ceramic plate has a power feeder receiving hole that extends from the lower surface to a position close to the electrode and a housing that is a recess extending from the bottom surface of the power feeder receiving hole to an electrode lead-out portion attached to the electrode. The housing houses a first metal disc. The first metal disc is bonded to the electrode lead-out portion by a first brazing material layer. The power feeder is inserted in the power feeder receiving hole with a gap therebetween. A second brazing material layer that encloses a second metal disc is located between the front-end surface of the power feeder and the first metal disc. The second brazing material layer covers the entire bottom surface of the power feeder receiving hole (i.e., extends to the boundary between the bottom surface and the side surface of the power feeder receiving hole). Furthermore, the second brazing material layer is in contact with the entire front-end surface of the power feeder and has a portion carried up along the side surface of the power feeder (FIG. 3 in PTL 1). Alternatively, the second brazing material layer is in contact with a middle portion but not in contact with an outer circumferential portion of the front-end surface of the power feeder (FIGS. 4 and 5 in PTL 1). CITATION LIST Patent Literature PTL 1: JP 2018-203581 A (Especially FIGS. 3 to 5) SUMMARY OF THE INVENTION In PTL 1, the second brazing material layer covers the entire bottom surface of the power feeder receiving hole (i.e., extends to the boundary between the bottom surface and the side surface of the power feeder receiving hole). Thus, if the second brazing material layer is designed to be in contact with the entire front-end surface of the power feeder, the second brazing material is likely to be carried up along the side surface of the power feeder during production. In such a case, the amount of the second brazing material between the front-end surface of the power feeder and the second metal disc or between the second metal disc and the first metal disc may become insufficient, and thus voids (pores) may be formed there. The voids may cause problems such as poor power supply. In contrast, if the second brazing material layer is designed to be in contact only with the middle portion of the front-end surface of the power feeder, the contact area is too small. This may cause problems such as poor power supply. The present invention was made to solve the above-described problems, and the main object thereof is to enable a power feeder to successfully supply power to an electrode embedded in a ceramic plate. [1] A member for semiconductor manufacturing apparatus according to the present invention includes: a ceramic plate having a wafer placement surface on an upper surface and in which an electrode is embedded; a power feeder receiving hole extending from a lower surface of the ceramic plate to a position close to the electrode; a power feeder inserted in the power feeder receiving hole with a gap therebetween; a recess extending from a bottom surface of the power feeder receiving hole to the electrode or to an electrode lead-out portion attached to the electrode, the recess having an opening diameter smaller than a diameter of the power feeder receiving hole and greater than or equal to a diameter of the power feeder; a first brazing material layer filling the recess; and a second brazing material layer bonding an entire end surface of the power feeder to the first brazing material layer and not extending to a boundary between the bottom surface and a side surface of the power feeder receiving hole. In the member for semiconductor manufacturing apparatus, the opening diameter of the recess is smaller than the diameter of the power feeder receiving hole and greater than or equal to the diameter of the power feeder. The first brazing material layer fills the recess. The second brazing material layer bonds the entire end surface of the power feeder to the first brazing material layer. The second brazing material layer does not extend to the boundary between the bottom surface and the side surface of the power feeder receiving hole. If the second brazing material layer extends to the boundary, the second brazing material is likely to be carried up from the boundary along the side surface of the power feeder receiving hole or along the side surface of the power feeder during p