US-12622232-B2 - Advanced self aligned multiple patterning using tin oxide

Abstract

Disclosed are methods and apparatuses for performing spacer on spacer multiple patterning schemes using an exhumable first spacer material and a complementary second spacer material. Certain embodiments involve using a tin oxide spacer material for one of the spacer materials in spacer on spacer self aligned multiple patterning.

Inventors

• Akhil Singhal
• Sivananda Krishnan Kanakasabapathy

Assignees

• LAM RESEARCH CORPORATION

Dates

Publication Date

20260505

Application Date

20210721

Claims (19)

1. 1 . A method for processing substrate, the method comprising: performing spacer-on-spacer patterning on a semiconductor substrate using at least one spacer comprising tin oxide, wherein performing spacer-on-spacer patterning comprises: forming a first spacer comprising a first conformal spacer material by selectively etching a patterned core material from a substrate having the first conformal spacer material over the patterned core material, the first conformal spacer material selected from the group consisting of titanium oxide, silicon oxide, silicon nitride, and lead oxide over the patterned core material; and forming a second spacer comprising a second conformal spacer material using the first spacer, the second conformal spacer material comprising tin.
2. 2 . The method of claim 1 , wherein performing spacer-on-spacer patterning comprises: depositing a first conformal spacer material over a patterned core material, selectively etching the patterned core material to form a first spacer comprising the first conformal spacer material, depositing a second conformal spacer material over the first spacer, selectively etching the first spacer to form a second spacer comprising the second conformal spacer material, and etching a target layer using the second spacer as a mask, wherein either the first conformal spacer material comprises tin oxide or the second conformal spacer material comprises tin oxide.
3. 3 . The method of claim 2 , wherein the first conformal spacer material comprises tin oxide and the first spacer is selectively etched by exhuming using hydrogen gas.
4. 4 . The method of claim 2 , wherein at least one of the first conformal spacer material and the second conformal spacer material comprises tin oxide and the other of the first conformal spacer material and the second conformal spacer material is selected from the group consisting of titanium oxide, silicon oxide, silicon nitride, hafnium oxide, and lead oxide.
5. 5 . The method of claim 2 , wherein the first conformal spacer material comprises tin oxide and the first spacer is selectively etched by exhuming using hydrogen gas.
6. 6 . The method of claim 1 , wherein the tin oxide is deposited using a tin halide, organometallic tin-containing compound, chlorinated organometallic tin-containing compound, and combinations thereof.
7. 7 . The method of claim 1 , wherein the tin oxide is deposited using a tin-containing precursor selected from the group consisting of tetrakis(dimethylamino) tin; tetrakis(ethylmethylamino) tin; N 2 ,N 3 -di-tert-butyl-butane-2,3-diamino-tin(II); and 1,3-bis(1,1-dimethylethyl)-4,5-dimethyl-(4R,5R)-1,3,2-diazastannolidin-2-ylidine.
8. 8 . The method of claim 1 , wherein the tin oxide is deposited using a tin-containing precursor selected from the group consisting of to tetrakis(dimethylamino) tin; tetrakis(ethylmethylamino) tin; N 2 ,N 3 -di-tert-butyl-butane-2,3-diamino-tin(II); 1,3-bis(1,1-dimethylethyl)-4,5-dimethyl-(4R,5R)-1,3,2-diazastannolidin-2-ylidine; stannous fluoride (SnF 2 ); tin(IV) chloride (SnCl 4 ); tin(IV) bromide (SnBr 4 ); tin hydride (SnH 4 ); tin(II)(1,3-bis(1,1-dimethylethyl)-4,5-dimethyl-(4R,5R)-1,3,2-diazastannolidin-2-ylidene); tetraethyl tin (SnEt 4 ); tetramethyl tin (SnMe 4 ); dibutyltin diacetate (Bu 2 Sn(OAc) 2 ); (dimethylamino)trimethyl tin(IV) (Me 3 Sn(NMe 2 )); tetrakis(diethylamido)tin(IV) (Sn(NEt 2 ) 4 ), trimethyl tin chloride; dimethyl tin dichloride; methyl tin trichloride; bis[bis(trimethylsilyl)amino]tin(II); hexaphenylditin(IV); tin(II) acetylacetonate; trimethyl(phenylethynyl) tin; dibutyldiphenyltin; tetraallyltin; tetravinyltin; and tricyclohexyltin hydride.
9. 9 . The method of claim 1 , wherein the tin oxide is provided using at least one of chemical vapor deposition process, atomic layer deposition, or any combination thereof.
10. 10 . The method of claim 1 , wherein tin oxide is provided using plasma-enhanced atomic layer deposition (PEALD).
11. 11 . The method of claim 1 , wherein the tin oxide is deposited using an oxygen-containing reactant selected from the group consisting of oxygen gas, oxygen plasma, water, ozone, hydrogen peroxide, and nitrous oxide.
12. 12 . A method for processing substrates, the method comprising: providing a substrate having a patterned core material; depositing a first material conformally over the patterned core material on sidewalls of the patterned core material, the first material selected from the group consisting of silicon oxide, silicon nitride, titanium oxide, and lead oxide; selectively removing the patterned core material to form a first spacer; depositing spacer material comprising a tin oxide conformally over the first spacer on sidewalls of the first spacer; and selectively removing first spacers to form second spacers comprising the tin oxide.
13. 13 . The method of claim 12 , wherein the tin oxide spacer material is deposited using a tin-containing precursor selected from the group consisting of tetrakis(dimethylamino) tin; tetrakis(ethylmethylamino) tin; N 2 ,N 3 -di-tert-butyl-butane-2,3-diamino-tin(II); 1,3-bis(1,1-dimethylethyl)-4,5-dimethyl-(4R,5R)-1,3,2-diazastannolidin-2-ylidine; stannous fluoride (SnF 2 ); tin(IV) chloride (SnCl 4 ); tin(IV) bromide (SnBr 4 ); tin hydride (SnH 4 ); tin(II)(1,3-bis(1,1-dimethylethyl)-4,5-dimethyl-(4R,5R)-1,3,2-diazastannolidin-2-ylidene); tetraethyl tin (SnEt 4 ); tetramethyl tin (SnMe 4 ); dibutyltin diacetate (Bu 2 Sn(OAc) 2 ); (dimethylamino)trimethyl tin(IV) (Me 3 Sn(NMe 2 )); tetrakis(diethylamido)tin(IV) (Sn(NEt 2 ) 4 ), trimethyl tin chloride; dimethyl tin dichloride; methyl tin trichloride; bis[bis(trimethylsilyl)amino]tin(II); hexaphenylditin(IV); tin(II) acetylacetonate; trimethyl(phenylethynyl) tin; dibutyldiphenyltin; tetraallyltin; tetravinyltin; and tricyclohexyltin hydride.
14. 14 . The method of claim 12 , wherein the tin oxide spacer material is deposited using an oxygen-containing reactant selected from the group consisting of oxygen gas, oxygen plasma, water, ozone, hydrogen peroxide, and nitrous oxide.
15. 15 . A method for processing substrates, the method comprising: depositing an exhumable material conformally over a core material; selectively removing horizontal regions of the exhumable material and removing the core material to form spacers comprising the exhumable material; and depositing a complementary material over the spacers comprising the exhumable material, wherein the exhumable material is capable of being selectively etched relative to the complementary material, wherein the exhumable material comprises tin oxide and the complementary material is selected from the group consisting of titanium oxide, silicon oxide, silicon nitride, hafnium oxide, and lead oxide.
16. 16 . The method of claim 15 , wherein at least one of the exhumable material and the complementary material comprises tin oxide and the other of the exhumable material and the complementary material is selected from the group consisting of titanium oxide, silicon oxide, silicon nitride, hafnium oxide, and lead oxide.
17. 17 . The method of claim 15 , further comprising removing the spacers comprising the exhumable material using hydrogen gas.
18. 18 . The method of claim 15 , wherein the exhumable material is selected from the group consisting of titanium oxide, silicon oxide, silicon nitride, and lead oxide and the complementary material comprises tin oxide.
19. 19 . The method of claim 15 , wherein the exhumable material comprises tin oxide deposited using a tin-containing precursor selected from the group consisting of tetrakis(dimethylamino) tin; tetrakis(ethylmethylamino) tin; N 2 ,N 3 -di-tert-butyl-butane-2,3-diamino-tin(II); 1,3-bis(1,1-dimethylethyl)-4,5-dimethyl-(4R,5R)-1,3,2-diazastannolidin-2-ylidine; stannous fluoride (SnF 2 ); tin(IV) chloride (SnCl 4 ); tin(IV) bromide (SnBr 4 ); tin hydride (SnH 4 ); tin(II)(1,3-bis(1,1-dimethylethyl)-4,5-dimethyl-(4R,5R)-1,3,2-diazastannolidin-2-ylidene); tetraethyl tin (SnEt 4 ); tetramethyl tin (SnMe 4 ); dibutyltin diacetate (Bu 2 Sn(OAc) 2 ); (dimethylamino)trimethyl tin(IV) (Me 3 Sn(NMe 2 )); tetrakis(diethylamido)tin(IV) (Sn(NEt 2 ) 4 ), trimethyl tin chloride; dimethyl tin dichloride; methyl tin trichloride; bis[bis(trimethylsilyl)amino]tin(II); hexaphenylditin(IV); tin(II) acetylacetonate; trimethyl(phenylethynyl) tin; dibutyldiphenyltin; tetraallyltin; tetravinyltin; and tricyclohexyltin hydride.

Description

INCORPORATION BY REFERENCE A PCT Request Form is filed concurrently with this specification as part of the present application. Each application that the present application claims benefit of or priority to as identified in the concurrently filed PCT Request Form is incorporated by reference herein in their entireties and for all purposes. BACKGROUND Fabrication of advanced integrated circuits often involves patterning of small features in high volume manufacturing of semiconductors. Different patterning techniques may be used to form structures with smaller pitches. Multiple patterning processes such as double patterning and quad patterning can be used to fabricate such structures but increases the number of deposition and etching operations, resulting in increased cost in producing such structures. The background description provided herein is for the purposes of generally presenting the context of the disclosure. Work of the presently named inventors, to the extent it is described in this background section, as well as aspects of the description that may not otherwise qualify as prior art at the time of filing, are neither expressly nor impliedly admitted as prior art against the present disclosure. SUMMARY One aspect involves a method for processing substrate, the method including: performing spacer-on-spacer patterning on a semiconductor substrate using at least one spacer including tin oxide. In various embodiments, performing spacer-on-spacer patterning includes: depositing a first conformal spacer material over a patterned core material, selectively etching the patterned core material to form a first spacer including the first conformal spacer material, depositing a second conformal spacer material over the first spacer, selectively etching the first spacer to form a second spacer including the second conformal spacer material, and etching a target layer using the second spacer as a mask, such that either the first conformal spacer material includes tin oxide or the second conformal spacer material includes tin oxide. In some embodiments, the spacer-on-spacer patterning is performed to form features having a pitch of less than about 40 nm. In some embodiments, the tin oxide is deposited using a tin halide, organometallic tin-containing compound, chlorinated organometallic tin-containing compound, and combinations thereof. In various embodiments, the tin oxide is deposited using a tin-containing precursor such as any one or more of tetrakis(dimethylamino) tin; tetrakis(ethylmethylamino) tin; N2,N3-di-tert-butyl-butane-2,3-diamino-tin(II); and 1,3-bis(1,1-dimethylethyl)-4,5-dimethyl-(4R,5R)-1,3,2-diazastannolidin-2-ylidine. In some embodiments, the tin-containing precursor is tetrakis(dimethylamino) tin, and the tin oxide is formed by exposing the semiconductor substrate to the tin-containing precursor and an oxygen-containing precursor including oxygen. In various embodiments, the tin oxide is provided using at least one of chemical vapor deposition process, atomic layer deposition, or any combination thereof. In various embodiments, tin oxide is provided using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the tin oxide is deposited using a tin-containing precursor such as any one or more of to tetrakis(dimethylamino) tin; tetrakis(ethylmethylamino) tin; N2,N3-di-tert-butyl-butane-2,3-diamino-tin(II); 1,3-bis(1,1-dimethylethyl)-4,5-dimethyl-(4R,5R)-1,3,2-diazastannolidin-2-ylidine; stannous fluoride (SnF2); tin(IV) chloride (SnCl4); tin(IV) bromide (SnBr4); tin hydride (SnH4); tin(II) (1,3-bis(1,1-dimethylethyl)-4,5-dimethyl-(4R,5R)-1,3,2-diazastannolidin-2-ylidene); tetraethyl tin (SnEt4); tetramethyl tin (SnMe4); dibutyltin diacetate (Bu3Sn(OAC2); (dimethylamino)trimethyl tin(IV) (Me3Sn(NMe2)); tetrakis(diethylamido)tin(IV) (Sn(NEt2)4), trimethyl tin chloride; dimethyl tin dichloride; methyl tin trichloride; bis[bis(trimethylsilyl)amino]tin(II); hexaphenylditin(IV); tin(II) acetylacetonate; trimethyl(phenylethynyl)tin; dibutyldiphenyltin; tetraallyltin; tetravinyltin; and tricyclohexyltin hydride. In some embodiments, the tin oxide is deposited using an oxygen-containing reactant such as any one or more of oxygen gas, oxygen plasma, water, ozone, hydrogen peroxide, and nitrous oxide. In various embodiments, the first conformal spacer material includes tin oxide and the second conformal spacer material is any one or more of titanium oxide, silicon oxide, silicon nitride, hafnium oxide, and lead oxide. In various embodiments, the first conformal spacer material is any one or more of titanium oxide, silicon oxide, silicon nitride, and lead oxide and the second conformal spacer material includes tin. In various embodiments, the first conformal spacer material includes tin oxide and the first spacer is selectively etched by exhuming using hydrogen gas. Another aspect involves a method for processing substrates, the method including: depositing an exhumable material conformally