US-12622253-B2 - Semiconductor device with through vias of various shapes and method of manufacturing the same

Abstract

A semiconductor device is provided with differently-shaped conductive through-vias, having different-shape horizontal cross-sections. The cross-sectional shapes of the via include but are not limited to circular and ring shaped, which are cross sections that correspond to vias that are pillar shaped and tube-shaped respectively.

Inventors

• Eun Hye DO
• Jong Hoon Kim

Assignees

• SK Hynix Inc.

Dates

Publication Date

20260505

Application Date

20230615

Priority Date

20230131

Claims (18)

1. 1 . A semiconductor device comprising: a substrate; a first through via and a second through via which penetrate the substrate; a third through via inside of the second through via, the third through via penetrating the substrate; a first bump connected to the first through via; and a second bump to which the second and third through vias are both connected, wherein the first through via is substantially pillar-shaped; and wherein the second through via is substantially tube-shaped.
2. 2 . The semiconductor device of claim 1 , wherein a portion of the substrate has a pillar-shaped portion surrounded by the tube-shaped second through via.
3. 3 . The semiconductor device of claim 1 , wherein the first through via and the second through via are electrically conductive and comprise the same conductive material.
4. 4 . The semiconductor device of claim 1 , wherein an area of an interface between the first through via and substrate material surrounding the first through via, is less than an area of an interface between the second through via and substrate material surrounding the second through via.
5. 5 . The semiconductor device of claim 1 , wherein a wall thickness of the tube-shaped second through via is smaller than a diameter of the first, pillar-shaped through via.
6. 6 . The semiconductor device of claim 1 , wherein substrate material is between the tube-shaped second through via and the third, pillar-shaped through via.
7. 7 . The semiconductor device of claim 1 , wherein the third through via is substantially pillar-shaped.
8. 8 . The semiconductor device of claim 1 , wherein an area of an interface between the first through via substrate material surrounding the first through via is less than a sum of an area of an interface between the second through via and surrounding substrate material and an area of an interface between the third through via and the surrounding substrate material.
9. 9 . A method of manufacturing a semiconductor device, the method comprising: forming first and second holes in a first surface of a substrate; and forming first and second through vias in the substrate by filling the first and the second holes with an electrically-conductive material; wherein the first hole is a substantially circular hole having a substantially round horizontal cross-sectional shape, and wherein the filled first hole is substantially pillar-shaped; and wherein the second hole is substantially tube-shaped, the horizontal cross section shape is substantially ring-shaped.
10. 10 . The method of claim 9 , further comprising: removing a portion of the substrate from a second surface of the substrate that is opposite the first surface of the substrate thereby exposing an end of each of the first and second through vias; forming a protection layer on the second substrate surface, the protection layer covering exposed ends of the first and second through vias; removing a portion of the protection layer to expose the ends of the first and second through vias again; and forming first and second bumps connected to the ends of the first and second through vias, respectively.
11. 11 . The method of claim 9 , wherein the step of forming the first and second holes is performed such that a portion of the substrate has a pillar shaped, which is surrounded by the substantially tube-shaped second hole.
12. 12 . The method of claim 9 , wherein the step of forming the first hole and the second hole is performed such that a cross section width of the second through via is less than a diameter of the first through via.
13. 13 . The method of claim 9 , wherein forming the first hole and the second hole is performed such that a third hole is formed together with the first and second holes, and wherein the third hole is formed inside the second hole.
14. 14 . The method of claim 13 , wherein forming the first hole and the second hole is performed such that a substantially tube-shaped portion of the substrate is between the second hole and the third hole.
15. 15 . The method of claim 13 , wherein forming the first hole and the second hole is performed such that the third hole is formed as a third hole, the interior of which is substantially tube-shaped.
16. 16 . The method of claim 13 , wherein forming the first and second through vias is performed such that a third through via, is formed by filling the third hole with a conductive material.
17. 17 . The method of claim 16 , further comprising forming a first bump that is connected to the first through via and a forming a second bump to which the second and third through vias are both connected.
18. 18 . The method of claim 9 , wherein an area of an interface between the first through via and substrate material surrounding and contacting the first through via is less than an area of an interface between the second through via and substrate material surrounding an in contact with the second through via.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS The present application claims priority under 35 U.S.C. 119(a) to Korean Application No. 10-2023-0013137, filed on Jan. 31, 2023, in the Korean Intellectual Property Office, which is incorporated herein by reference in its entirety. BACKGROUND 1. Technical Field The present disclosure generally relates to a semiconductor technology and, more particularly, to a semiconductor device with through vias of various different shapes and a method of manufacturing the same. 2. Related Art A semiconductor device may include through-vias that penetrate a substrate. Integrated circuits may be integrated on or in, the substrate. When a through-via is filled or its interior surface is coated with an electrically-conductive material, a through-via provides a means of transferring signals and power to and between integrated circuits formed “on” or “in” the substrate. Different vias might help to improve semiconductor device performance, integration density, and operating speed increase. SUMMARY The present disclosure according to an aspect may provide a semiconductor device including a substrate, and a first through via and a second through via which penetrate the substrate. The first through via may be a pillar; the second through via may be a tube. The present disclosure according to an aspect may provide a method of manufacturing a semiconductor device including forming a first hole and a second hole from a first surface of a substrate, and forming first and second through vias filling the first hole and the second hole, respectively. The first hole may be formed as a first hole of a pillar shape, and the second hole may be formed as a second hole of a tube shape. BRIEF DESCRIPTION OF THE DRAWINGS FIGS. 1 and 2 are schematic views illustrating a semiconductor device according to an embodiment. FIGS. 3 and 4 are schematic views illustrating semiconductor devices according to embodiments of the present disclosure. FIGS. 5 and 6 are schematic views illustrating a semiconductor device according to an embodiment. FIGS. 7 and 8 are schematic views illustrating semiconductor devices according to embodiments of the present disclosure. FIGS. 9 to 17 are schematic views illustrating steps of a method of manufacturing a semiconductor device according to an embodiment of the present disclosure. FIGS. 18 to 22 are schematic views illustrating steps of a method of manufacturing a semiconductor device according to an embodiment of the present disclosure. DETAILED DESCRIPTION Unless they are specifically defined otherwise, terms used herein, (including technical and scientific terms) have their common and ordinary meanings. It will be understood that although the terms “first,” “second,” “side,” “top or upper,” and “bottom or lower” are relative terms that may be used herein to describe various devices. Such devices should not be limited by such terms because they are only used to distinguish one device or structure from another device or structure, not to indicate a particular or required sequence or number of devices or structures. As used herein and for claim construction purposes, “penetrate” means passing, extending, piercing, or diffusing, into or through something. A pillar is a solid, right-circular cylinder having two, substantially circular and substantially parallel bases and a center axis that joins the centers of the two bases substantially perpendicular to the planes of the two bases. A tube is a hollow, right-circular cylinder comprising a wall with a thickness, substantially parallel bases and a center axis substantially orthogonal to the bases. A ring, also known as an annulus, is a plane or flat figure comprised of two, substantially concentric circles of different diameters. The distance between the two circles is considered the section width of the ring/annulus. The shape of a tube's horizontal cross section is a ring or annulus. A hole, which may be circular or tube-shaped is a correspondingly-shaped unfilled space or volume. Cross sections can be either horizontal or vertical. A horizontal cross section cuts through an object in a horizontal direction, i.e., in a direction parallel to the object's base. A vertical cross section cuts through an object the vertical direction. i.e., in a direction perpendicular to the object's base. A semiconductor device may comprise a semiconductor substrate or a structure comprised of a plurality of stacked semiconductor substrates. The semiconductor device may comprise a semiconductor package structure in which semiconductor substrates are packaged. The semiconductor substrate may be a semiconductor wafer, a semiconductor die, or a semiconductor chip in which electronic components and devices are integrated. Integrated circuits may be integrated or formed “on” or “in” a semiconductor substrate. A semiconductor substrate may be divided into a plurality of semiconductor chips or a plurality of semiconductor dies. The semiconductor chip may be