US-12622254-B2 - Package structure and method of forming the same

US12622254B2US 12622254 B2US12622254 B2US 12622254B2US-12622254-B2

Abstract

A package structure and method of forming the same are provided. The package structure includes a die, a through via, an encapsulant, an adhesion promoter layer, an insulating layer and a polymer layer. The through via is laterally aside the die. The encapsulant laterally encapsulates the die and the a through via. The adhesion promoter layer and an insulating layer are sandwiched between the a through via and the encapsulant. Sidewalls of the a through via are covered by the adhesion promoter layer and the insulating layer. The polymer layer is located under the through via and encapsulant. The insulating layer includes a plurality of portions.

Inventors

Hung-Chun Cho
Hung-Jui Kuo
Yu-Hsiang Hu
SIH-HAO LIAO
Wei-Chih Chen

Assignees

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Dates

Publication Date: 20260505
Application Date: 20240221

Claims (20)

1 . A package structure, comprising: a die; a through via laterally aside the die; an encapsulant laterally encapsulating the die and the a through via; an adhesion promoter layer and an insulating layer, sandwiched between the a through via and the encapsulant, wherein sidewalls of the a through via are covered by the adhesion promoter layer and the insulating layer; and a polymer layer under the through via and the encapsulant, wherein the insulating layer comprises a plurality of portions, and the insulating layer comprises metal oxide.
2 . The package structure of claim 1 , wherein the plurality of portions of the insulating layer have different thicknesses.
3 . The package structure of claim 1 , wherein one of the plurality of portions of the insulating layer is in contact with the sidewalls of the through via.
4 . The package structure of claim 1 , wherein one of the plurality of portions of the insulating layer is located between the adhesion promoter layer and the encapsulant.
5 . The package structure of claim 1 , wherein the metal oxide comprises copper oxide.
6 . The package structure of claim 1 , wherein the plurality of portions of the insulating layer are discontinuous.
7 . The package structure of claim 1 , wherein a top surface of one of the plurality of portions of the insulating layer is coplanar with a top surface of the through via, or a top surface of the adhesion promoter layer.
8 . The package structure of claim 1 , wherein a top surface of one of the plurality of portions of the insulating layer is coplanar with a top surface of the die or a top surface of the encapsulant.
9 . The package structure of claim 1 , further comprising a conductive layer disposed in the polymer layer and electrically connected to the through via.
10 . A package structure, comprising: a first redistribution layer (RDL) structure; a second RDL structure over the first RDL structure; a first die and a first encapsulant disposed between the first RDL structure and the second RDL structure; a first through via extending through the first encapsulant and connecting the first RDL structure and the second first RDL structure; and a first adhesion promoter layer and a first discontinuous oxide layer separating the first through via from the first encapsulant.
11 . The package structure of claim 10 , wherein the first through via comprises: a first seed layer; and a first conductive post on the first seed layer, wherein a bottom surface of the first seed layer is lower than a bottom surface of the first adhesion promoter layer and a bottom surface of the first discontinuous oxide layer.
12 . The package structure of claim 11 , wherein an upper portion of the first conductive post is separated from the first encapsulant by the first adhesion promoter layer and the first discontinuous oxide layer, and a lower portion of the first conductive post is separated from a polymer of the second RDL structure by the first seed layer.
13 . The package structure of claim 12 , wherein a top surface of the first discontinuous oxide layer is coplanar with a top surface of the first conductive post, a top surface of the first adhesion promoter layer, a top surface of the first die, or a top surface of the first encapsulant.
14 . The package structure of claim 10 , further comprising: a second die and a second encapsulant disposed under the second RDL structure; a second through via extending through the second encapsulant and connecting the second redistribution layer structure; and a second adhesion promoter layer and a second discontinuous oxide layer separating the second through via from the second encapsulant.
15 . The package structure of claim 14 , wherein the second through via comprises: a second seed layer; and a second conductive post on the second seed layer, wherein the second conductive post and the second seed layer are separated from the second encapsulant by the second adhesion promoter layer and the second discontinuous oxide layer.
16 . The package structure of claim 15 , wherein a top surface of the second discontinuous oxide layer is coplanar with a top surface of the second conductive post, a top surface of the second adhesion promoter layer, a top surface of the second die, or a top surface of the second encapsulant.
17 . A package structure, comprising: a die disposed on a polymer layer along a first direction; a through via disposed on the polymer layer and laterally aside the die; an encapsulant laterally encapsulating the die and the through via; an adhesion promoter structure, surrounding sidewalls of the through via and disposed between the through via and the encapsulant, wherein a distance between the adhesion promoter structure and the polymer layer long the first direction decreases as the adhesion promoter structure becomes closer to the sidewalls of the through via.
18 . The package structure of claim 17 , wherein the adhesion promoter structure is in contact with the sidewalls of the through via.
19 . The package structure of claim 17 , wherein the adhesion promoter structure comprises an adhesion promoter layer and an insulating layer between the adhesion promoter layer and the through via.
20 . The package structure of claim 17 , wherein the adhesion promoter structure comprises an insulating layer and an adhesion promoter layer between the insulating layer and the through via.

Description

CROSS-REFERENCE TO RELATED APPLICATION This application is a continuation application of and claims the priority benefit of a prior application Ser. No. 18/165,929, filed on Feb. 8, 2023, which is a continuation application of and claims the priority benefit of a prior application Ser. No. 17/687,688, filed on Mar. 7, 2022. The prior application Ser. No. 17/687,688 is a continuation application of and claims the priority benefit of a prior application Ser. No. 16/547,590, filed on Aug. 22, 2019. The entirety of each of the above-mentioned patent applications is hereby incorporated by reference herein and made a part of this specification. BACKGROUND The semiconductor industry has experienced rapid growth due to continuous improvements in the integration density of various electronic components (i.e., transistors, diodes, resistors, capacitors, etc.). For the most part, this improvement in integration density has come from continuous reductions in minimum feature size, which allows more of the smaller components to be integrated into a given area. These smaller electronic components also demand smaller packages that utilize less area than previous packages. Some smaller types of packages for semiconductor components include quad flat packages (QFPs), pin grid array (PGA) packages, ball grid array (BGA) packages, flip chips (FC), three-dimensional integrated circuits (3DICs), wafer level packages (WLPs), and package on package (PoP) devices and so on. Currently, integrated fan-out packages are becoming increasingly popular for their compactness. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1A to FIG. 1M are schematic cross-sectional view illustrating a method of forming a package structure according to some embodiments of the disclosure. FIG. 2A to FIG. 2C are enlarged cross-sectional views illustrating a portion of the package structure according to some embodiments of the disclosure. FIG. 3A to FIG. 3C are enlarged cross-sectional views illustrating a portion of the package structure according to some embodiments of the disclosure. FIG. 4 is a flowchart illustrating a method of forming an adhesion promoter layer on a TIV according to some embodiments of the disclosure. DETAILED DESCRIPTION The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a second feature over or on a first feature in the description that follows may include embodiments in which the second and first features are formed in direct contact, and may also include embodiments in which additional features may be formed between the second and first features, such that the second and first features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. Further, spatially relative terms, such as “beneath”, “below”, “lower”, “on”, “above”, “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the FIG.s. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the FIG.s. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly. Other features and processes may also be included. For example, testing structures may be included to aid in the verification testing of the 3D packaging or 3DIC devices. The testing structures may include, for example, test pads formed in a redistribution layer or on a substrate that allows the testing of the 3D packaging or 3DIC, the use of probes and/or probe cards, and the like. The verification testing may be performed on intermediate structures as well as the final structure. Additionally, the structures and methods disclosed herein may be used in conjunction with testing methodologies that incorporate intermediate verification of known good dies to increase the yield and decrease costs. FIG. 1A to FIG. 1M are schematic cross-sectional views illustrating a method of forming a package structure and a PoP device according to some embodiments of the disclosure. FIG. 2A to FIG. 2C are enlarged cross-sectional views illustrating a polymer layer, a TIV, an adhesion promoter layer and an encapsulant of a package structure. Referring to FIG. 1A, a carrier 10 is provided. The carrier 10 may be a glass carrier, a ceramic carrier, or the like. A de-bonding layer 11 is