US-12622286-B2 - Side-wettable semiconductor package device with heat dissipation surface structure

US12622286B2US 12622286 B2US12622286 B2US 12622286B2US-12622286-B2

Abstract

A die of the package device is covered by an encapsulation layer, a plurality of lead portions are configured on the bottom surface of the encapsulation layer, a side portion of each lead portion is also exposed on a side surface of the encapsulation layer, and thereby the package device is used as a side-wettable package device; wherein, in a process of manufacturing the package device, a conductive electroplated conducting layer is formed on the surface of the encapsulation layer, and the electroplated conducting layer is used to conduct electric power required during an electroplating process. After the electroplating process is completed, the electroplated conducting layer can be used as a heat dissipation layer for the package device. The heat dissipation layer completely covers the surface of the package device so as to increase heat dissipation area and to be attached by a heat sink.

Inventors

Chung-Hsiung Ho
Chi-Hsueh Li
Yung-Hui Wang
Wen-Liang Huang

Assignees

PANJIT INTERNATIONAL INC.

Dates

Publication Date: 20260505
Application Date: 20230630
Priority Date: 20230424

Claims (9)

1 . A side-wettable semiconductor package device with a heat dissipation surface structure, including: an encapsulation layer having a bottom surface, a top surface and a plurality of sides; a die, wrapped inside the encapsulation layer; a heat dissipation layer, formed on the top surface of the encapsulation layer by electroplating, and without electrically connecting to the die; a clip, one side of which is electrically connected to the die; a plurality of lead portions formed by cutting a same lead frame, wherein one part of the lead portions is electrically connected to the die, and another part of the lead portions is electrically connected to another side of the clip; and each lead portion is wrapped in the encapsulation layer and exposed on a bottom and the sides of the encapsulation layer, and a side of the lead portion forms an indented gap which is indented from the side of the encapsulation layer; wherein the heat dissipation layer includes an electroplated conducting layer, and an electroplated protection layer is formed on exposed surfaces of each lead portion and on the electroplated conducting layer.
2 . The side-wettable semiconductor package device with a heat dissipation surface structure as claimed in claim 1 , wherein the heat dissipation layer completely covers the top surface of the encapsulation layer.
3 . The side-wettable semiconductor package device with a heat dissipation surface structure as claimed in claim 1 , further including: a central die pad to which the die is attached, and the central die pad being surrounded by the plurality of lead portions.
4 . The side-wettable semiconductor package device with a heat dissipation surface structure as claimed in claim 3 , wherein a bottom of the central die pad is exposed without being covered by the encapsulation layer.
5 . The side-wettable semiconductor package device with a heat dissipation surface structure as claimed in claim 1 , wherein the clip is wrapped inside the encapsulation layer.
6 . The side-wettable semiconductor package device with a heat dissipation surface structure as claimed in claim 1 , wherein the electroplated conducting layer is disposed on the top surface of the encapsulation layer.
7 . The side-wettable semiconductor package device with a heat dissipation surface structure as claimed in claim 3 , wherein the electroplated protection layer is also disposed on a bottom surface of the central die pad and the portions of each lead portion which are exposed on the bottom and the sides of the encapsulation layer.
8 . The side-wettable semiconductor package device with a heat dissipation surface structure as claimed in claim 1 , wherein cutting the same lead frame includes performing a first cut and then a second cut along scribe lines on the lead frame, and the first cut is performed on the bottom surface of the lead frame only to expose a side surface of each lead portion, and the second cut is performed to completely cut through the encapsulation layer and the heat dissipation layer.
9 . The side-wettable semiconductor package device with a heat dissipation surface structure as claimed in claim 8 , wherein a cutting width of the first cut is a first width, a cutting width of the second cut is a second width, and the second width is greater than the first width.

Description

CROSS REFERENCE TO RELATED APPLICATION(S) This non-provisional application claims the benefit under 35 U.S.C. § 119(e) to patent application No. 112115099 filed in Taiwan on Apr. 24, 2023, which is hereby incorporated in its entirety by reference into the present application. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a side-wettable semiconductor package device, especially to a side-wettable semiconductor package device with an electroplated heat dissipation surface structure. 2. Description of the Related Art For a leadless package device, when observing an upper surface of the package device from a top view, there is no lead extending outward from sides of the leadless package device, for example a Quad Flat No-Lead (QFN) package device or a Dual Flat No-Lead (DFN) package device, and the bond pads of such type of package device are formed on the bottom surface of the package device. To make it easier for an inspection instrument (e.g. Automated Optical Inspection, AOI) to judge whether the QFN/DFN package device is properly soldered, metal surfaces are further extended from all bond pads to expose on the sides of the package device, so that during a soldering process, the solder can be adsorbed to the metal surfaces on the sides of the package device. A package device with such a structure of exposed metal surfaces on the sides of the package device for convenience in inspecting soldering quality is called a side-wettable package device. However, the existing leadless package devices have limited heat dissipation capability which needs to be further improved. SUMMARY OF THE INVENTION In view of the aforementioned, the main purpose of the present invention is to provide a side-wettable semiconductor package device with a heat dissipation surface structure, having a side wettable effect, and further having an increased heat conduction area to improve heat dissipation efficiency. To achieve the aforesaid purpose, the present invention discloses the side-wettable semiconductor package device with the heat dissipation surface structure including: an encapsulation layer having a bottom surface, a top surface and a plurality of sides;a die, wrapped inside the encapsulation layer;a heat dissipation layer, formed on the top surface of the encapsulation layer by electroplating, and without electrically connecting to the die;a clip, one side of which is electrically connected to the die;a plurality of lead portions formed by cutting a same lead frame, wherein one part of the lead portions is electrically connected to the die, and another part of the lead portions is electrically connected to another side of the clip; and each lead portion is wrapped in the encapsulation layer and exposed on a bottom and the sides of the encapsulation layer, and a side of the lead portion forms an indented gap which is indented from the side of the encapsulation layer. In addition, the present invention discloses a process, wherein a conductive electroplated conducting layer is formed on a surface of the encapsulation layer, and the electroplated conducting layer is used to conduct electric power required during an electroplating process which electroplates exposed surfaces of each lead portion. After the electroplating process is completed, the electroplated conducting layer can be used as a heat dissipation layer for the package device. As the heat dissipation layer completely covers the surface of the package device, heat dissipation area is increased, and the heat dissipation area may further attach to a heat sink to improve heat dissipation efficiency. The present invention further discloses a process of a side-wettable semiconductor package device with a heat dissipation surface structure, including the steps: gluing a plurality of dies on an upper surface of a lead frame, wherein the lead frame has a plurality of adjacently disposed device units, and a scribe line is defined between each pair of adjacent device units, and each device unit has a central die pad and a plurality of lead portions surrounding said device unit, and on each central die pad, a die of the plurality of dies is glued;connecting electrically the die in each device unit to the lead portions surrounding said device unit;connecting electrically an electroplated connector between adjacent device units of the lead frame, and the electroplated connector being above the scribe line;forming an encapsulation layer to cover the die of each device unit and the electroplated connectors, wherein a lower surface of the lead frame is exposed on the encapsulation layer;forming an electroplated conducting layer on an upper surface of the encapsulation layer, and making the electroplated conducting layer electrically contact the electroplated connector;performing a first cut to the lower surface of the lead frame along the scribe line to expose the sides of each lead portion without cutting through the encapsulation layer;utili