US-12622295-B2 - Signal-heat separated TMV packaging structure and manufacturing method thereof

US12622295B2US 12622295 B2US12622295 B2US 12622295B2US-12622295-B2

Abstract

A signal-heat separated TMV packaging structure includes an insulating dielectric material, an inner signal line layer arranged in the insulating dielectric material, an outer signal line layer, a heat dissipation metal face and a chip. A first side of the insulating dielectric material is provided with an isolating layer. The outer signal line layer is arranged on a surface of a second side of the insulating dielectric material and is connected with the inner signal line layer through a TMV structure. The heat dissipation metal face is arranged on a surface of the first side of the insulating dielectric material, and is separated from the inner signal line layer. The chip is embedded in the insulating dielectric material, with an active face in electrically-conductive connection with the inner signal line layer and a passive face in heat transfer connection with the heat dissipation metal face.

Inventors

Xianming Chen
Lei Feng
Benxia Huang
Yejie HONG
Gao HUANG

Assignees

ZHUHAI ACCESS SEMICONDUCTOR CO., LTD.

Dates

Publication Date: 20260505
Application Date: 20220823
Priority Date: 20211027

Claims (6)

1 . A signal-heat separated through-molding-via (TMV) packaging structure, comprising: an insulating dielectric material having a first side and a second side which are opposite to each other, wherein the first side of the insulating dielectric material is provided with an isolating layer; an inner signal line layer arranged in the insulating dielectric material; an outer signal line layer arranged on a surface of the second side of the insulating dielectric material and connected with the inner signal line layer through a TMV structure; a heat dissipation metal face arranged on a surface of the first side of the insulating dielectric material, wherein the heat dissipation metal face and the inner signal line layer are separated through the isolating layer; and a chip provided with an active face and a passive face which are opposite to each other, wherein the chip is embedded in the insulating dielectric material, the active face of the chip is in electrically-conductive connection with the inner signal line layer, and the passive face of the chip is in heat transfer connection with the heat dissipation metal face; wherein the thermally-conductive metal comprises a thermally-conductive metal face and a thermally-conductive metal column, a first side of the thermally-conductive metal face is connected with the passive face of the chip, and a second side of the thermally-conductive metal face is connected with the heat dissipation metal face through the thermally-conductive metal column.
2 . The signal-heat separated TMV packaging structure according to claim 1 , wherein the passive face of the chip is directly connected with the heat dissipation metal face, or a thermally-conductive metal is connected between the passive surface of the chip and the heat dissipation metal face.
3 . The signal-heat separated TMV packaging structure according to claim 1 , wherein the inner signal line layer is provided with multiple layers, and adjacent inner signal line layers are connected by a second conductive metal column.
4 . The signal-heat separated TMV packaging structure according to claim 1 , wherein the TMV structure is a first conductive metal column, and the first conductive metal column is directly connected with the inner signal line layer, or a tin solder is connected between the first conductive metal column and the inner signal line layer.
5 . The signal-heat separated TMV packaging structure according to claim 1 , wherein the insulating dielectric material comprises a plurality of insulating layers laminated in sequence, and one of the insulating layers located on the first side of the insulating dielectric material serves as the isolating layer.
6 . The signal-heat separated TMV packaging structure according to claim 5 , wherein the insulating dielectric material further comprises a packaging layer, the plurality of insulating layers define a packaging cavity for accommodating the chip, and the packaging layer covers an adjacent insulating layer, fills the packaging cavity, and wraps around the chip.

Description

CROSS-REFERENCE TO RELATED APPLICATION This application is based on and claims the benefit of priority from Chinese Patent Application No. 2021112589318, filed on 27 Oct. 2021, the entirety of which is incorporated by reference herein. TECHNICAL FIELD The disclosure relates to the technical field of semiconductor packaging, and more particularly, to a signal-heat separated TMV packaging structure and a manufacturing method thereof. BACKGROUND With the development and progress of electronic technologies, electronic products are becoming shorter and thinner, which promotes the development of packaging structures of the electronic products towards high integration and miniaturization. Meanwhile, the electronic products are required to have more and more powerful functions, and computational loads of chips packaged by packaging bodies are increasingly larger. As a result, a heat flux density per unit area of the packaging body increases rapidly. If the generated heat cannot be dissipated quickly, running speeds and performances of the electronic components will decrease due to the continuous temperature rise, and the reliability of the electronic products will also be greatly affected. Therefore, how to realize higher density integrated packaging and how to solve the heat dissipation problem of the packaging body are very important issues in the current packaging field. In the existing technology of packaging, a conventional wire-bonding packaging method is to pre-fix components such as chips on a surface of a substrate, and then realize electrical connection between the components and the substrate by means of wire bonding, and finally package with a packaging material (molding). However, this method has at least the following disadvantages: (1) Mounting the chip on the substrate surface and then wire bonding may increase the package volume, which cannot meet the development requirements of high-density integration and miniaturization; and(2) after the chip is packaged, one side of the chip is the packaging material, and the other side is welded with a PCB through a bonding pad, which leads to poor heat dissipation effect of the chip. Even if a heat dissipation copper surface is arranged on the back of the chip, the space of the heat dissipation copper surface is limited by the packaging structure, which cannot really address the heat dissipation problem in the operating process of the chip. SUMMARY The disclosure aims at solving at least one of the technical problems in the existing technology. Therefore, the disclosure provides a signal-heat separated TMV (Through Molding Via) packaging structure and a manufacturing method thereof, which can realize high-density integration and signal-heat separation, and greatly improve the heat dissipation effect. In a first aspect, a signal-heat separated TMV packaging structure according to an embodiment of the disclosure includes an insulating dielectric material having a first side and a second side which are opposite to each other, where the first side of the insulating dielectric material is provided with an isolating layer; an inner signal line layer arranged in the insulating dielectric material; an outer signal line layer arranged on a surface of the second side of the insulating dielectric material and connected with the inner signal line layer through a TMV structure; a heat dissipation metal face arranged on a surface of the first side of the insulating dielectric material, where the heat dissipation metal face and the inner signal line layer are separated through the isolating layer; and a chip provided with an active face and a passive face which are opposite to each other, where the chip is embedded in the insulating dielectric material, the active face of the chip is in electrically-conductive connection with the inner signal line layer, and the passive face of the chip is in heat transfer connection with the heat dissipation metal face. The signal-heat separated TMV packaging structure according to the embodiment of the disclosure at least has the following beneficial effects. The chip is embedded in the insulating dielectric material, which is beneficial to realize higher-density integrated packaging. The heat dissipation metal face and the inner signal line layer are separated by the isolating layer, which can realize signal and heat separation, and greatly improve the heat dissipation effect. According to some embodiments of the disclosure, the passive face of the chip is directly connected with the heat dissipation metal face, or a thermally-conductive metal is connected between the passive surface of the chip and the heat dissipation metal face. According to some embodiments of the disclosure, the thermally-conductive metal includes a thermally-conductive metal face and a thermally-conductive metal column, a first side of the thermally-conductive metal face is connected with the passive face of the chip, and a second side of the thermally-conductive m