US-12622334-B2 - Semiconductor module

US12622334B2US 12622334 B2US12622334 B2US 12622334B2US-12622334-B2

Abstract

A semiconductor module includes a conductive substrate, a semiconductor element, a control terminal, and a sealing resin. The conductive substrate has an obverse surface and a reverse surface that are spaced apart from each other in a thickness direction. The semiconductor element is electrically bonded to the obverse surface and has a switching function. The control terminal is configured to control the semiconductor element. The sealing resin has a resin obverse surface and a resin reverse surface, and covers the conductive substrate, the semiconductor element, and a part of the control terminal. The control terminal protrudes from the resin obverse surface, and extends along the thickness direction.

Inventors

Kohei Tanikawa
Kenji Hayashi
Ryosuke Fukuda

Assignees

ROHM CO., LTD.

Dates

Publication Date: 20260505
Application Date: 20250819
Priority Date: 20201014

Claims (7)

1 . A semiconductor module provided with a half-bridge circuit, the semiconductor module comprising: a supporting substrate including a first insulating layer, a first metal layer and a second metal layer; a first conductive portion and a second conductive portion both bonded to the supporting substrate and made of a metal plate member; a first semiconductor element and a second semiconductor element constituting an upper arm circuit and a lower arm circuit, respectively, in the half-bridge circuit and both having a switching function; a first wiring substrate and a second wiring substrate each including a second insulating layer and a third metal layer formed on an upper surface of the second insulating layer, the third metal layer including a plurality of wiring portions spaced apart and insulated from each other, the first wiring substrate being disposed on the first conductive portion and electrically connected to the first semiconductor element, the second wiring substrate being disposed on the second conductive portion and electrically connected to the second semiconductor element; a first input terminal disposed on one side of a first direction perpendicular to a thickness direction relative to the first semiconductor element and the first conductive portion; a second input terminal and a third input terminal both disposed on the one side of the first direction relative to the first semiconductor element and the first conductive portion, the second input terminal and the third input terminal being opposite from each other with the first input terminal sandwiched therebetween in a second direction perpendicular to the thickness direction and the first direction; at least one output terminal disposed on another side of the first direction relative to the second semiconductor element and the second conductive portion; a conducting member constituting a part of a first main circuit current path extending between the first input terminal and the output terminal, and a part of a second main circuit current path extending between the output terminal and the second and the third input terminals; and a sealing resin having a resin obverse surface and a resin reverse surface facing opposite from the resin obverse surface, the sealing resin covering a part of the supporting substrate, the first conductive portion, the second conductive portion, the first semiconductor element, the second semiconductor element, a part of the first input terminal, a part of the second input terminal, a part of the third input terminal, a part of the output terminal, the first wiring substrate, the second wiring substrate and the conducting member, wherein the plurality of wiring portions on the first wiring substrate and the plurality of wiring portions on the second wiring substrate comprise connection members exposed from the resin obverse surface of the sealing resin for connection to a control system circuit board.
2 . The semiconductor module according to claim 1 , wherein the first main circuit current path is provided to extend, via the first semiconductor element, between the first input terminal and the output terminal, the second main circuit current path is provided to extend, via the second semiconductor element, between the output terminal and the second and the third input terminals, each of the first main circuit current path and the second main circuit current path is symmetrical, as viewed in the thickness direction, with respect to a center line passing through a center of the first input terminal and extending in the first direction.
3 . The semiconductor module according to claim 2 , wherein the conducting member is symmetrical, as viewed in the thickness direction, with respect to the center line passing through the center of the first input terminal and extending in the first direction.
4 . The semiconductor module according to claim 3 , wherein a region in which a first main circuit current flows and a region in which a second main circuit current flows overlap with each other as viewed in plan view.
5 . The semiconductor module according to claim 1 , wherein the first semiconductor element includes a first element obverse surface, a first element reverse surface facing opposite from the first element obverse surface, and a first gate electrode disposed at the first element obverse surface, the second semiconductor element includes a second element obverse surface, a second element reverse surface facing opposite from the second element obverse surface, and a second gate electrode disposed at the second element obverse surface, an electroconductive wire is connected to the third metal layer of the first wiring substrate and to the first gate electrode of the first semiconductor element, and an electroconductive wire is connected to the third metal layer of the second wiring substrate and to the second gate electrode of the second semiconductor element.
6 . The semiconductor module according to claim 1 , wherein the first wiring substrate and the second wiring substrate are constituted by a DBC substrate.
7 . The semiconductor module according to claim 1 , wherein a plurality of first semiconductor elements are spaced apart in the second direction, and a plurality of second semiconductor elements are spaced apart in the second direction.

Description

CROSS-REFERENCE This application is a continuation application of U.S. application Ser. No. 18/774,315, filed Jul. 16, 2024, which is a continuation application of U.S. application Ser. No. 18/430,414, filed Feb. 1, 2024, which is a continuation application of U.S. application Ser. No. 18/455,009, filed Aug. 24, 2023, which is a continuation application of U.S. application Ser. No. 18/011,798, filed Dec. 20, 2022, which is a national stage of international application PCT/JP2021/033676, filed Sep. 14, 2021, which claims priority to Japanese application 2020-173335, filed Oct. 14, 2020, all of which are incorporated herein by reference, including the original claims. TECHNICAL FIELD The present disclosure relates to a semiconductor module. BACKGROUND ART Conventionally, semiconductor modules including power switching elements, such as metal oxide semiconductor field effect transistors (MOSFETs) or insulated gate bipolar transistors (IGBTs), have been known. The semiconductor modules are used in various electronic devices, such as industrial devices, home appliances, information terminals, and automobile devices. Patent Document 1 discloses a conventional semiconductor module (power module). The semiconductor module described in Patent Document 1 includes a semiconductor element and a supporting substrate (ceramic substrate). The semiconductor element is an IGBT made of silicon (Si), for example. The supporting substrate supports the semiconductor element. The supporting substrate includes an insulating base member and conductor layers stacked on the respective surfaces of the base member. The base member is made of ceramic, for example. Each of the conductor layers is made of copper (Cu), for example, and the semiconductor element is bonded to one of the conductor layers. PRIOR ART DOCUMENT Patent Document Patent Document 1: JP-A-2015-220382 SUMMARY OF THE INVENTION Problem to be Solved by the Invention In recent years, there has been a demand for energy-saving, sophisticated, and smaller electronic devices. In order to meet the demand, it is necessary to improve the performance and reduce size of semiconductor modules mounted on the electronic devices. The present disclosure has been conceived in view of the foregoing circumstances, and an object thereof is to provide a semiconductor device having a module configuration preferable for improving performance and size reduction. Means to Solve the Problem A semiconductor module of the present disclosure includes: a conductive substrate having an obverse surface facing in one sense of a thickness direction, and a reverse surface facing away from the obverse surface in the thickness direction; a semiconductor element electrically bonded to the obverse surface and having a switching function; a control terminal for controlling the semiconductor element; and a sealing resin having a resin obverse surface facing the same side as the obverse surface, and a resin reverse surface facing an opposite side from the resin obverse surface, the sealing resin covering the conductive substrate, the semiconductor element, and a part of the control terminal. The control terminal protrudes from the resin obverse surface, and extends along the thickness direction. Advantages of the Invention According to the configuration as described above, it is possible to provide a semiconductor module configuration preferable for improving performance and size reduction. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view illustrating a semiconductor module according to a first embodiment. FIG. 2 is a perspective view corresponding to FIG. 1 but omitting a sealing resin, a resin member, and a resin-filling portion. FIG. 3 is a perspective view corresponding to FIG. 2 but omitting a conducting member. FIG. 4 is a plan view illustrating the semiconductor module according to the first embodiment. FIG. 5 is a plan view corresponding to FIG. 4 but showing the sealing resin, the resin member, and the resin-filling portion with imaginary lines. FIG. 6 is a partially enlarged view showing a part of FIG. 5 but omitting the imaginary lines of the sealing resin, the resin member, and the resin-filling portion. FIG. 7 is a partially enlarged view showing a part of FIG. 6. FIG. 8 is a plan view corresponding to FIG. 5 but showing a part of the conducting member with an imaginary line. FIG. 9 is a front view illustrating the semiconductor module according to the first embodiment. FIG. 10 is a bottom view illustrating the semiconductor module according to the first embodiment. FIG. 11 is a left side view illustrating the semiconductor module according to the first embodiment. FIG. 12 is a right side view illustrating the semiconductor module according to the first embodiment. FIG. 13 is a cross-sectional view taken along line XIII-XIII of FIG. 5. FIG. 14 is a cross-sectional view taken along line XIV-XIV of FIG. 5. FIG. 15 is a partially enlarged view showing a part of FIG. 14. FIG. 16 is a cros