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US-12624172-B2 - Method for producing wetting agent for semiconductor, containing polyvinyl alcohol composition, polishing composition containing wetting agent for semiconductor, obtained by the production method, and method for producing polishing composition

US12624172B2US 12624172 B2US12624172 B2US 12624172B2US-12624172-B2

Abstract

To provide a polyvinyl alcohol composition effectively suppressed in generation of an aggregated product, in a method for producing a wetting agent for a semiconductor, containing a polyvinyl alcohol composition. A method for producing a wetting agent for a semiconductor, containing a polyvinyl alcohol composition, wherein the polyvinyl alcohol composition is obtained through an addition-in-liquid step of adding into the inside of any one solution of a first liquid containing polyvinyl alcohol and water and a second liquid other than the first liquid, the other liquid of the first liquid and the second liquid.

Inventors

  • Hisanori TANSHO
  • Kohsuke Tsuchiya
  • Hiroki Yamaguchi
  • Reiko AKIZUKI
  • Ryunosuke ANDO

Assignees

  • FUJIMI INCORPORATED

Dates

Publication Date
20260512
Application Date
20210609
Priority Date
20200930

Claims (15)

  1. 1 . A method for producing a wetting agent for a semiconductor, containing a polyvinyl alcohol composition, wherein: the polyvinyl alcohol composition is obtained through an addition-in-liquid step of adding into an inside of a first liquid containing polyvinyl alcohol and water a second liquid other than the first liquid, or adding the first liquid into an inside of the second liquid; and the addition-in-liquid step is carried out in a stirring vessel having a stirring blade, and a ratio (L/D) of a stirring blade diameter (L) to an inner diameter (D) of the stirring vessel is 0.1 or more and 0.9 or less.
  2. 2 . The method for producing a wetting agent for a semiconductor according to claim 1 , further comprising a filtration step of filtering the polyvinyl alcohol composition obtained through the addition-in-liquid step.
  3. 3 . The method for producing a wetting agent for a semiconductor according to claim 1 , wherein the first liquid is obtained by heating a polyvinyl alcohol dispersion liquid in which polyvinyl alcohol is dispersed in water, to 85-98° C. and then cooling the polyvinyl alcohol dispersion liquid to 15-50° C.
  4. 4 . The method for producing a wetting agent for a semiconductor according to claim 1 , wherein the addition-in-liquid step is a step of adding the first liquid into the second liquid retained in a vessel having a stirring tool.
  5. 5 . The method for producing a wetting agent for a semiconductor according to claim 1 , wherein a content of the polyvinyl alcohol in the polyvinyl alcohol composition in the addition-in-liquid step is 10% by mass or less based on a total mass of the polyvinyl alcohol composition.
  6. 6 . The method for producing a wetting agent for a semiconductor according to claim 1 , further comprising an alkali addition step of adding an alkali to the polyvinyl alcohol composition obtained through the addition-in-liquid step.
  7. 7 . A polishing composition comprising a wetting agent for a semiconductor, produced by the production method according to claim 1 , and an abrasive.
  8. 8 . A method for producing a polishing composition, comprising mixing a wetting agent for a semiconductor, produced by the production method according to claim 1 , and an abrasive.
  9. 9 . The method for producing a wetting agent for a semiconductor according to claim 1 , wherein the addition-in-liquid step is carried out by using a supply pipe with an inner size of 5 mm or more and 50 cm or less.
  10. 10 . The method for producing a wetting agent for a semiconductor according to claim 1 , wherein the addition-in-liquid step is carried out by using a supply pipe and the supply pipe is open toward the bottom of the stirring vessel.
  11. 11 . The method for producing a wetting agent for a semiconductor according to claim 1 , wherein a supply speed of adding in the addition-in-liquid step is 50 mL/min or more and 20 L/min or less.
  12. 12 . A method for producing a polishing composition containing a polyvinyl alcohol composition, wherein: the polyvinyl alcohol composition is obtained through an addition-in-liquid step of adding into an inside of a first liquid containing polyvinyl alcohol and water a second liquid other than the first liquid, or adding the first liquid into an inside of the second liquid; and the addition-in-liquid step is carried out in a stirring vessel having a stirring blade, and a ratio (L/D) of a stirring blade diameter (L) to an inner diameter (D) of the stirring vessel is 0.1 or more and 0.9 or less.
  13. 13 . The method for producing a polishing composition according to claim 12 , wherein the addition-in-liquid step is carried out by using a supply pipe with an inner size of 5 mm or more and 50 cm or less.
  14. 14 . The method for producing a polishing composition according to claim 12 , wherein the addition-in-liquid step is carried out by using a supply pipe and the supply pipe is open toward the bottom of the stirring vessel.
  15. 15 . The method for producing a polishing composition according to claim 12 , wherein a supply speed of adding in the addition-in-liquid step is 50 mL/min or more and 20 L/min or less.

Description

TECHNICAL FIELD The present invention relates to: a method for producing a wetting agent for a semiconductor, containing a polyvinyl alcohol composition; a polishing composition containing a wetting agent for a semiconductor, obtained by the production method; and a method for producing a polishing composition. BACKGROUND ART Polyvinyl alcohol is a hydrophilic synthetic resin, and is often used as, for example, a fibrous raw material, a paste, paint, an adhesive, or an emulsifier, in the form of a fluent solution (aqueous solution). In general, polyvinyl alcohol can be dissolved in water by dispersing it in water and then agitating it at a high temperature (e.g., 80° C. or higher). However, it is known to generate agglomerates (lumps) when dissolved without being dispersed in water. The reason for generation of an agglomerate is considered because surfaces of polyvinyl alcohol particles, in contact with water, are swollen and semi-dissolved and such polyvinyl alcohol particles semi-dissolved coalesce to each other to thereby form a large agglomerate. Such an agglomerate is in the state where only surface portions of the agglomerate are dissolved and no water penetrates into the interior of the agglomerate at all, and the agglomerate is extremely difficult to dissolve in a solvent. Therefore, an aqueous polyvinyl alcohol solution containing an agglomerate has the problem of being hardly applied in various applications. Various methods for producing an aqueous polyvinyl alcohol solution have been proposed in order to solve the above problems. For example, Patent Literature 1 discloses a method for enhancing dispersibility and solubility of polyvinyl alcohol by allowing a surfactant to be contained in the polyvinyl alcohol. CITATION LIST Patent Literature Patent Literature 1: Japanese Patent Laid-Open No. 2019-94431 SUMMARY OF INVENTION Technical Problem However, it has been found that, even if an aqueous polyvinyl alcohol solution with no agglomerate is obtained, other aqueous solution is added to the aqueous polyvinyl alcohol solution to thereby cause an aggregate to be generated. For example, in a case where such an aqueous polyvinyl alcohol solution is applied to a wetting agent for a semiconductor or a polishing composition, a solid of an aggregate or the like scratches an object to be polished, and thus it is necessary to remove the solid by filtration or the like in advance. An aqueous polyvinyl alcohol solution with an aggregate is very inferior in filtration ability, thereby resulting in a remarkable reduction in productivity, for example, time-consuming for filtration, and/or a reduction in yield. An object of the present invention is then to provide a polyvinyl alcohol composition effectively suppressed in generation of an aggregate, in a method for producing a wetting agent for a semiconductor, containing a polyvinyl alcohol composition (aqueous polyvinyl alcohol solution). Solution to Problem The present inventors have made intensive studies in order to solve the above new problems. As a result, the inventors have found that the problems can be solved by a method for producing a wetting agent for a semiconductor and/or a polishing composition, the method being a method for producing a wetting agent for a semiconductor and/or a polishing composition, which contains a polyvinyl alcohol composition, wherein the polyvinyl alcohol composition is obtained through an addition-in-liquid step of adding into the inside of any one liquid of a first liquid containing polyvinyl alcohol and water and a second liquid other than the first liquid, the other liquid of the first liquid and the second liquid, and thus have completed the present invention. Effect of the Invention According to the present invention, there is provided a polyvinyl alcohol composition effectively suppressed in generation of an aggregate, in a method for producing a wetting agent for a semiconductor and/or a polishing composition, which contains a polyvinyl alcohol composition. BRIEF DESCRIPTION OF DRAWING FIG. 1 A view schematically illustrating an apparatus used in an experiment of addition-in-liquid. DESCRIPTION OF EMBODIMENTS The present invention relates to a method for producing a wetting agent for a semiconductor, the method being a method for producing a wetting agent for a semiconductor and/or a polishing composition, which contains a polyvinyl alcohol composition, wherein the polyvinyl alcohol composition is obtained through an addition-in-liquid step of adding into the inside of any one solution of a first liquid containing polyvinyl alcohol and water and a second liquid other than the first liquid, the other liquid of the first liquid and the second liquid. A wetting agent for a semiconductor and/or a polishing composition, which contains a polyvinyl alcohol composition, obtained by such a production method, is suppressed in generation of an aggregate and is excellent in filtration ability. According to one embodiment, a wettin