US-12624251-B2 - CMP slurry composition for patterned tungsten wafer and method of polishing patterned tungsten wafer using the same

Abstract

A CMP slurry composition for patterned tungsten wafers and a method of polishing patterned tungsten wafers using the same, the CMP slurry composition includes a solvent; an abrasive; and a non-dendrimeric poly(amidoamine).

Inventors

• Ji Ho LEE
• Young Gi Lee
• Soo Yeon SIM
• Hyun Woo Lee
• Jong Won Lee

Assignees

• SAMSUNG SDI CO., LTD.

Dates

Publication Date

20260512

Application Date

20220819

Priority Date

20210823

Claims (11)

1. 1 . A CMP slurry composition for patterned tungsten wafers, the CMP slurry composition comprising: a solvent; an abrasive; and a non-dendrimeric poly (amidoamine), wherein the non-dendrimeric poly (amidoamine) has a random hyperbranched structure, and wherein the non-dendrimeric poly (amidoamine) is prepared by reacting an ester having at least one ester group and at least one C═C bond with an amine having at least one primary amine group.
2. 2 . The CMP slurry composition as claimed in claim 1 , wherein the non-dendrimeric poly(amidoamine) includes a primary amine group (NH 2 ), a secondary amine group (NH), a carboxyl group (COOH), or COOZ, in which Z is a C 1 to C 4 alkyl group.
3. 3 . The CMP slurry composition as claimed in claim 2 , wherein the non-dendrimeric poly (amidoamine) includes: the primary amine group (NH 2 ) or the secondary amine group (NH); and the carboxyl group (COOH) or COOZ, in which Z is a C 1 to C 4 alkyl group.
4. 4 . The CMP slurry composition as claimed in claim 1 , wherein the non-dendrimeric poly(amidoamine) is prepared by reacting an ester having at least one ester group and at least one C═C bond with a diamine having two primary amine groups.
5. 5 . The CMP slurry composition as claimed in claim 1 , wherein the non-dendrimeric poly(amidoamine) is prepared by reacting a diester having two ester groups and one C═C bond with a diamine having two primary amine groups.
6. 6 . The CMP slurry composition as claimed in claim 5 , wherein: the diester includes a compound represented by Formula 1, in Formula 1, R 1 is a divalent substituted or unsubstituted C 2 to C 4 alkylene group having at least one C═C bond, and R 2 and R 3 are each independently a C 1 to C 4 alkyl group; and the diamine includes a substituted or unsubstituted C 2 to C 6 alkylene diamine.
7. 7 . The CMP slurry composition as claimed in claim 1 , wherein the CMP slurry composition includes: 0.001 wt % to 20 wt % of the abrasive, and 0.0001 wt % to 0.1 wt % of the non-dendrimeric poly(amidoamine), all wt % being based on a total weight of the CMP slurry composition.
8. 8 . The CMP slurry composition as claimed in claim 1 , further comprising an oxidant, a catalyst, or an organic acid.
9. 9 . The CMP slurry composition as claimed in claim 1 , wherein the CMP slurry composition has a pH of 1 to 6.
10. 10 . The CMP slurry composition as claimed in claim 1 , wherein the non-dendrimeric poly (amidoamine) has have a weight average molecular weight of 25,000 g/mol to 50,000 g/mol.
11. 11 . A tungsten polishing method comprising polishing tungsten using the CMP slurry composition for patterned tungsten wafers as claimed in claim 1 .

Description

CROSS-REFERENCE TO RELATED APPLICATION This application claims the benefit of Korean Patent Application No. 10-2021-0110612, filed on Aug. 23, 2021, in the Korean Intellectual Property Office, the entire disclosure of which is incorporated herein by reference. BACKGROUND 1. Field Embodiments relate to a CMP slurry composition for patterned tungsten wafers and a method of polishing patterned tungsten wafers using the same. 2. Description of the Related Art Chemical mechanical polishing (CMP) compositions and methods for polishing (or planarizing) substrate surfaces have been considered. A metal layer polishing process using a CMP composition may include polishing only an initial metal layer, polishing the metal layer and a barrier layer, and polishing the metal layer, the barrier layer, and an oxide film. A composition for polishing a metal layer (e.g., tungsten) on a semiconductor substrate may include abrasive particles suspended in an aqueous solution and a chemical accelerator, such as an oxidant and a catalyst in the aqueous solution. SUMMARY The embodiments may be realized by providing a CMP slurry composition for patterned tungsten wafers, the CMP slurry composition including a solvent; an abrasive; and a non-dendrimeric poly(amidoamine). The non-dendrimeric poly(amidoamine) may have a random hyperbranched structure. The non-dendrimeric poly(amidoamine) may include a primary amine group (NH2), a secondary amine group (NH), a carboxyl group (COOH), or COOZ, in which Z is a C1 to C4 alkyl group. The non-dendrimeric poly(amidoamine) may include the primary amine group (NH2) or the secondary amine group (NH); and the carboxyl group (COOH) or COOZ, in which Z is a C1 to C4 alkyl group. The non-dendrimeric poly(amidoamine) may be prepared by reacting an ester having at least one ester group and at least one C═C bond with an amine having at least one primary amine group. The non-dendrimeric poly(amidoamine) may be prepared by reacting an ester having at least one ester group and at least one C═C bond with a diamine having two primary amine groups. The non-dendrimeric poly(amidoamine) may be prepared by reacting a diester having two ester groups and one C═C bond with a diamine having two primary amine groups. The diester may include a compound represented by Formula 1, in Formula 1, R1 may be a divalent substituted or unsubstituted C2 to C4 alkylene group having at least one C═C bond, and R2 and R3 may each independently be a C1 to C4 alkyl group; and the diamine may include a substituted or unsubstituted C2 to C6 alkylene diamine. The CMP slurry composition may include 0.001 wt % to 20 wt % of the abrasive, and 0.0001 wt % to 0.1 wt % of the non-dendrimeric poly(amidoamine), all wt % being based on a total weight of the CMP slurry composition. The CMP slurry composition may further include an oxidant, a catalyst, or an organic acid. The CMP slurry composition may have a pH of 1 to 6. The embodiments may be realized by providing a tungsten polishing method comprising polishing tungsten using the CMP slurry composition for patterned tungsten wafers according to an embodiment. DETAILED DESCRIPTION As used herein to represent a specific numerical range, the expression “X to Y” means “greater than or equal to X and less than or equal to Y”. As used herein, the term “or” is not an exclusive term, e.g., “A or B” would include A, B, or A and B. In an implementation, inclusion of a non-dendrimeric poly(amidoamine) into a CMP slurry composition for patterned tungsten wafers may help improve flatness of patterned tungsten wafers, minimize reduction in polishing rate with respect to patterned tungsten wafers, and reduce corrosion of patterned tungsten wafers. A CMP slurry composition for patterned tungsten wafers according to an embodiment (hereinafter also referred to as a “CMP slurry composition”) may include, e.g., a solvent, an abrasive, and a non-dendrimeric poly(amidoamine). Now, each of the components will be described in more detail. Solvent The solvent may serve to reduce friction upon polishing patterned tungsten wafers using the abrasive. The solvent may include, e.g., a polar solvent, a nonpolar solvent, or a combination thereof. In an implementation, the solvent may include water (e.g., ultrapure water or deionized water), organic amines, organic alcohols, organic alcohol amines, organic ethers, or organic ketones. In an implementation, the solvent may be ultrapure water or deionized water. In an implementation, the solvent may be present, e.g., in a balance amount in the CMP slurry composition. Abrasive The abrasive may polish patterned tungsten wafers at a high polishing rate. The abrasive may include, e.g., metal or non-metal oxide abrasive particles. In an implementation, the abrasive may include, e.g., among silica, alumina, ceria, titania, or zirconia. In an implementation, the abrasive may be silica (e.g., colloidal silica). The abrasive may be spherical or aspherical particles having an average prim