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US-12624318-B2 - Cleaning agent composition and cleaning method

US12624318B2US 12624318 B2US12624318 B2US 12624318B2US-12624318-B2

Abstract

A cleaning agent composition for use in removal of an adhesive residue, the composition containing a quaternary ammonium salt and a solvent, wherein the solvent consists of an organic solvent, and the organic solvent includes an N,N,N′,N′-tetra(hydrocarbyl)urea.

Inventors

  • Hiroshi Ogino
  • Takahisa OKUNO
  • Ryo Karasawa
  • Tetsuya Shinjo

Assignees

  • NISSAN CHEMICAL CORPORATION

Dates

Publication Date
20260512
Application Date
20200311
Priority Date
20190314

Claims (5)

  1. 1 . A cleaning agent composition for use in removal of an adhesive residue, the composition containing substantially no water, and comprising: a halogen-containing quaternary ammonium salt selected from the group consisting of tetramethylammonium fluoride, tetraethylammonium fluoride, tetrapropylammonium fluoride, and tetrabutylammonium fluoride, and an N,N,N′,N′-tetra(hydrocarbyl)urea selected from the group consisting of N,N,N′,N′-tetramethylurea and N,N,N′,N′-tetraethylurea.
  2. 2 . The cleaning agent composition according to claim 1 , which further comprises an organic solvent selected from 1,2-diethoxyethane, mesitylene, tetrahydrofuran, cyclopentyl methyl ether, and tetrahydropyran.
  3. 3 . The cleaning agent composition according to claim 1 , wherein an amount of the N,N,N′,N′-tetra(hydrocarbyl)urea is 10 mass % or more with respect to a total amount of solvent present in the composition.
  4. 4 . A cleaning method, comprising removing an adhesive residue remaining on a substrate using the cleaning agent composition of claim 1 .
  5. 5 . A method for producing a processed semiconductor substrate, the method comprising producing a laminate including a semiconductor substrate, a support substrate, and an adhesive layer formed from an adhesive composition; processing the semiconductor substrate of the produced laminate; debonding the semiconductor substrate after processing; and removing an adhesive residue remaining on the debonded semiconductor substrate with the cleaning agent composition of claim 1 .

Description

TECHNICAL FIELD The present invention relates to a cleaning agent composition for use in removal of an adhesive residue remaining after, for example, debonding a laminate which has been temporarily bonded by the mediation of an adhesive layer formed from a polysiloxane adhesive and on a semiconductor substrate. The invention also relates to a cleaning method making use of the adhesive agent composition. BACKGROUND ART Conventionally, electronic elements and wires are 2-dimensionally (within a plane) integrated on a semiconductor wafer. In a trend toward further integration, demand has arisen for a semiconductor integration technique which achieves 3-dimensional integration (i.e., stacking) in addition to 2-dimensional integration. In the technique of 3-dimensional integration, a number of layers are stacked by the mediation of through silicon vias (TSVs). In integration of multiple layers, each component wafer to be stacked is thinned by polishing (i.e., grinding) a surface opposite the circuit-furnished surface (i.e., a back surface), and the thus-thinned semiconductor wafers are stacked. Before thinning, the semiconductor wafer (may also be called simply “wafer”) is fixed to a support for facilitating polishing by means of a polishing machine (i.e., grinder). Since the fixation must be easily removed after polishing, the fixation is called temporary bonding. Temporary bonding must be easily removed from the support. When such temporary bonding is removed by excessive force, in some cases a thinned semiconductor wafer may be broken or deformed. In order to prevent such a phenomenon, the temporarily bonded support is detached in a gentle manner. However, from another aspect, it is not preferred that the temporarily bonded support be removed or slid by a stress applied during polishing of the back surface of the semiconductor wafer. Therefore, temporary bonding must withstand the stress during polishing and must be easily removed after polishing. For example, one required performance includes having high stress (i.e., strong adhesion) within the plane during polishing and low stress (i.e., weak adhesion) toward the thickness direction during detaching. Furthermore, in processing steps, the temperature of a workpiece may exceed 150° C. in some cases. Thus, temporary bonding must be stable at such high temperatures. Under such circumstances, polysiloxane adhesives meeting the aforementioned characteristic requirements are mainly used as temporary adhesives in the semiconductor industry. In temporary bonding by use of a polysiloxane adhesive, an adhesive residue often remains on a substrate surface after removal of the thinned substrate. In order to avoid an undesired phenomenon in a subsequent step, there has been developed a cleaning agent composition for removing such a residue and cleaning the surface of a semiconductor substrate (see, for example, Patent Documents 1 and 2). Currently, there is continuous demand for a new cleaning agent composition in the semiconductor field. Patent Document 1 discloses a siloxane resin-remover containing a polar, aprotic solvent and a quaternary ammonium hydroxide, and Patent Document 2 discloses a cured resin-remover containing an alkylammonium fluoride. However, development of a more effective cleaning agent composition is expected. Also Patent Document 3 discloses a cleaning agent composition containing a urea derivative such as dimetylurea. However, since the composition employs water as a solvent, a target substrate may be problematically corroded, which is disadvantageous in use thereof. PRIOR ART DOCUMENTS Patent Documents Patent Document 1: WO 2014/092022Patent Document 2: U.S. Pat. No. 6,818,608Patent Document 3: Japanese Patent Application Laid-Open (kokai) No. 2007-243162 SUMMARY OF THE INVENTION Problems to be Solved by the Invention The present invention has been conceived in view of the foregoing. Thus, an object of the invention is to provide a cleaning agent composition which has excellent cleaning performance, in cleaning of a substrate (e.g., a semiconductor substrate), with respect to an adhesive residue remaining after debonding a laminate that has been temporarily bonded by the mediation of an adhesive layer formed from a polysiloxane adhesive and which can clean the substrate at high efficiency without corroding the substrate. Another object is to provide a cleaning method using the composition. Means for Solving the Problems The present inventors have conducted extensive studies to attain the aforementioned objects, and have found the following. In the case of, for example, cleaning a substrate (e.g., a semiconductor substrate) on which an adhesive residue remains after debonding a laminate that has been temporarily bonded by the mediation of an adhesive layer formed from a polysiloxane adhesive, the substrate can be suitably cleaned at high efficiency for a short period of time without corroding the substrate, by use of a cleaning agent composition