US-12624455-B2 - Trim and deposition profile control with multi-zone heated substrate support for multi-patterning processes

US12624455B2US 12624455 B2US12624455 B2US 12624455B2US-12624455-B2

Abstract

A substrate processing system is provided and includes a substrate support, a memory, and calibration, operating parameter, and solving modules. The substrate support supports a substrate and includes temperature control elements. The memory stores, for the temperature control elements, temperature calibration values and sensitivity calibration values. The calibration module, during calibration of the temperature control elements, performs a first calibration process to determine the temperature calibration values or a second calibration process to determine the sensitivity calibration values. The sensitivity calibration values relate at least one of trim amounts or deposition amounts to temperature changes. The operating parameter module determines operating parameters for the temperature control elements based on the temperature and sensitivity calibration values. The solving module, subsequent to the calibration of the temperature control elements, controls operation of the temperature control elements during at least one of a trim or deposition step based on the operating parameters.

Inventors

Ramesh Chandrasekharan
Michael Philip Roberts
PULKIT AGARWAL
Adrien Lavoie
Ravi Kumar
Nuoya YANG
Chan Myae Myae SOE
Ashish Saurabh

Assignees

LAM RESEARCH CORPORATION

Dates

Publication Date: 20260512
Application Date: 20240730

Claims (5)

1 . A substrate processing system comprising: a substrate support comprising a plurality of temperature control elements; a calibration module configured to determine a baseline critical dimension of a first substrate provided as a result of one of the plurality of temperature control elements being at a first setting for a trim operation performed on the first substrate, adjust a parameter of the one of the plurality of temperature control elements from the first setting to a second setting, perform the trim operation on a second substrate, measure a post trim critical dimension for the second substrate; and determine a first sensitivity calibration value based on the baseline critical dimension, the post trim critical dimension and a difference between the first setting and the second setting; and an operating parameter module configured to determine a first operating parameter for the one of the plurality of temperature control elements based on the first sensitivity calibration value; and a solving module configured to, subsequent to the calibration of the one of the plurality of temperature control elements, control operation of the one of the plurality of temperature control elements during a trim step based on the first operating parameter.
2 . The substrate processing system of claim 1 , wherein: the calibration module is configured to determine a baseline critical dimension profile of the first substrate provided as a result of the plurality of temperature control elements being at first settings for the trim operation performed on the first substrate, wherein the baseline critical dimension profile includes the baseline critical dimension, and wherein the first settings include the first setting of the one of the plurality of temperature control elements, subsequent to performing the trim operation on the second substrate, measure a post trim critical dimension profile for the second substrate, wherein the post trim critical dimension profile includes the post trim critical dimension; and determine one or more sensitivity calibration values based on the baseline critical dimension profile, the post trim critical dimension profile and a difference between the one of the first settings and the second setting, wherein the one or more sensitivity calibration values includes the first sensitivity calibration value; and the operating parameter module is configured to determine one or more operating parameters for the plurality of temperature control elements based on the one or more sensitivity calibration values, wherein the one or more operating parameters include the first operating parameter; and the solving module is configured to, subsequent to the calibration of the plurality of temperature control elements, control operation of the plurality of temperature control elements during a trim step based on the one or more operating parameters.
3 . The substrate processing system of claim 1 , wherein the calibration module is configured to: determine a first difference between the baseline critical dimension and the post trim critical dimension for the one of the plurality of temperature control elements; determine a second difference between the first setting and the second setting; and determine the first sensitivity calibration value for the one of the plurality of temperature control elements based on the first difference and the second difference.
4 . The substrate processing system of claim 1 , wherein the operating parameter module is configured to: receive a target critical dimension; calculate a difference between the target critical dimension and at least one of the baseline critical dimension and the post trim critical dimension; and based on the difference, determine a temperature setting of the one or the plurality of temperature control elements to achieve the target critical dimension.
5 . The substrate processing system of claim 1 , wherein: the operating parameter module is configured to receive a target trim critical dimension, calculate a difference between the target trim critical dimension and at least one of the baseline critical dimension or the post trim critical dimension, determine a temperature setting to achieve the target trim critical dimension based on the first sensitivity calibration value and the difference between the target trim critical dimension and the at least one of the baseline critical dimension or the post trim critical dimension; and the solving module is configured to, subsequent to the calibration of the one of the plurality of temperature control elements, control operation of the one of the plurality of temperature control elements during a trim step based on the temperature setting.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS This application is a continuation of U.S. application Ser. No. 17/429,882, filed on Aug. 10, 2021, which is a U.S. National Phase Application under 35 U.S.C. 371 of International Application No. PCT/US2020/017922, filed on Feb. 12, 2020, which claims the benefit of U.S. Provisional Application No. 62/806,000, filed on Feb. 15, 2019 and U.S. Provisional Application No. 62/870,150, filed on Jul. 3, 2019. The entire disclosures of the applications referenced above are incorporated herein by reference. FIELD The present disclosure relates to double patterning processes in an atomic layer deposition substrate processing chamber, and more particularly to trim and deposition profile control. BACKGROUND The background description provided here is for the purpose of generally presenting the context of the disclosure. Work of the presently named inventors, to the extent it is described in this background section, as well as aspects of the description that may not otherwise qualify as prior art at the time of filing, are neither expressly nor impliedly admitted as prior art against the present disclosure. Substrate processing systems may be used to treat substrates such as semiconductor wafers. Examples of substrate treatments include etching, deposition, photoresist removal, etc. During processing, the substrate is arranged on a substrate support such as an electrostatic chuck and one or more process gases may be introduced into the processing chamber. The one or more process gases may be delivered by a gas delivery system to the processing chamber. In some systems, the gas delivery system includes a manifold connected to a showerhead that is located in the processing chamber. In some examples, the process deposits a thin film on a substrate using atomic layer deposition (ALD). SUMMARY A substrate processing system is provided and includes a substrate support, a memory, a calibration module, an operating parameter module, and a solving module. The substrate support is configured to support a first substrate and includes temperature control elements. The memory is configured to store, for the temperature control elements, temperature calibration values and sensitivity calibration values. The calibration module is configured to, during calibration of the temperature control elements, perform a first calibration process to determine the temperature calibration values or a second calibration process to determine the sensitivity calibration values. The sensitivity calibration values relate at least one of trim amounts to temperature changes or deposition amounts to temperature changes. The operating parameter module is configured to determine operating parameters for the temperature control elements based on the temperature calibration values and the sensitivity calibration values. The solving module is configured to, subsequent to the calibration of the temperature control elements, control operation of the temperature control elements during at least one of a trim step or a deposition step based on the operating parameters. In other features, the substrate support includes temperature controlled zones. Each of the temperature controlled zones includes one or more of the temperature control elements. In other features, the solving module is configured to perform at least one of open loop or closed loop control of each of the temperature controlled zones. In other features, the at least one of the temperature controlled zones or the temperature control elements is implemented in an open loop or a closed loop. In other features, the solving module is configured to perform at least one of open loop or closed loop control of temperature control elements. In other features, the first calibration process includes: adjusting a parameter of the temperature control elements by a predetermined amount; determining temperature changes of the first substrate or substrate support in response to the adjusted parameter; and based on the predetermined amount and the determined temperature changes, generating the temperature calibration values. In other features, the second calibration process includes: determining a baseline critical dimension profile of a second substrate provided as a result of the temperature control elements being at first settings for a trim operation performed on the second substrate; adjusting a parameter of at least one of the temperature control elements from one of the first settings to a second setting; performing the trim operation on a third substrate; measuring a post trim critical dimension profile for the third substrate; and determining one of the sensitivity calibration values based on the baseline critical dimension profile, the post trim critical dimension profile and a difference between the one of the first settings and the second setting. In other features, the second calibration process includes: determining a baseline critical dimension profile of a second