US-12625439-B2 - Substrate treating method and substrate treating apparatus

US12625439B2US 12625439 B2US12625439 B2US 12625439B2US-12625439-B2

Abstract

The inventive concept provides a substrate treating method on which there is no generation of a portion on which a development is not performed, among a front surface of a substrate during a puddle process. The substrate treating method includes positioning a substrate in a treating space; forming a liquid film of a treating liquid on the substrate by supplying the treating liquid to a rotating substrate; and puddling including stopping the supplying of the treating liquid and reacting a thin film on the substrate with the liquid film on the substrate, and wherein an exhaust pressure provided at the treating space during the puddling is lower than an exhaust pressure provided at the treating space during the forming of the liquid film.

Inventors

Ho Jin Jang

Assignees

SEMES CO., LTD.

Dates

Publication Date: 20260512
Application Date: 20230623
Priority Date: 20221229

Claims (15)

1 . A substrate treating method, comprising: positioning a substrate in a treating space; rotating the substrate; forming a liquid film of a treating liquid on the substrate by supplying the treating liquid onto the substrate during the rotating; puddling the substrate, the puddling including ceasing the supplying of the treating liquid and reacting a thin film of the substrate with the liquid film on the substrate; and applying a constant exhaust pressure to the treating space where a first exhaust pressure during the puddling is lower than a second exhaust pressure during the forming.
2 . The method of claim 1 , wherein the applying applies such that the first exhaust pressure is zero.
3 . The method of claim 1 , further comprising: rinsing the substrate, the rinsing including supplying a rinsing liquid to the substrate following the puddling, and wherein the applying applies such that a third exhaust pressure is provided during the rinsing, the third exhaust pressure being higher than the first exhaust pressure.
4 . The method of claim 1 , wherein the supplying supplies the treating liquid to the substrate while changing a supply position from an edge region of the substrate to a central region of the substrate.
5 . The method of claim 1 , wherein the forming and the puddling are repeated N (N≥2) times.
6 . The method of claim 5 , wherein N is in a range of 2≤N≤5.
7 . The method of claim 1 , wherein the treating liquid is a developing liquid.
8 . The method of claim 3 , wherein the rinsing liquid is pure water.
9 . The method of claim 3 , further comprising: drying the substrate following the rinsing.
10 . The method of claim 1 , wherein the rotating rotates the substrate at a speed of about 30 rpm or less during the forming.
11 . The method of claim 1 , wherein the rotating rotates the substrate at a speed of about 30 rpm or less, or does not rotate, during the puddling.
12 . A substrate treating method, comprising: positioning a substrate in a treating space; rotating the substrate; forming a liquid film of a developing liquid on the substrate by supplying the developing liquid onto the substrate during the rotating; and puddling the substrate, the puddling including ceasing the supplying of the developing liquid and reacting a thin film of the substrate with the liquid film of the developing liquid; and applying a constant exhaust pressure to the treating space where a first exhaust pressure during the puddling is lower than a second exhaust pressure during the forming, and the forming and the puddling are repeated three times.
13 . The method of claim 12 , wherein the first exhaust pressure is zero.
14 . The method of claim 12 , further comprising: rinsing including supplying a rinsing liquid to the substrate following the puddling, and wherein the applying applies such that a third exhaust pressure during the rinsing is higher than the first exhaust pressure during the puddling.
15 . The method of claim 1 , further comprising: rinsing the substrate, the rinsing including supplying a rinsing liquid to the substrate following the puddling, wherein the substrate does not rotate during the puddling, wherein the applying applies such that a third exhaust pressure is provided during the rinsing, the third exhaust pressure being higher than the first exhaust pressure, the first exhaust pressure being zero.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS A claim for priority under 35 U.S.C. § 119 is made to Korean Patent Application No. 10-2022-0189582 filed on Dec. 29, 2022, in the Korean Intellectual Property Office, the entire contents of which are hereby incorporated by reference. TECHNICAL FIELD Embodiments of the inventive concept described herein relate to a substrate treating method and a substrate treating apparatus. BACKGROUND Conventionally, a substrate treating apparatus used in a semiconductor process includes a liquid treating chamber which performs a liquid treatment (e.g., photoresist liquid coating, an anti-reflection layer coating, a developing liquid coating, etc.) on a substrate. Korean Patent Registration Publication No. 10-0386712 (published on Aug. 20, 2001) contains an embodiment of a substrate development treating method. Referring to the above publication, a conventional substrate development treatment method includes a coating process of coating a developing liquid on the substrate to form a liquid film, a puddle process of reacting a thin film on the substrate with the liquid film of the developing liquid, and a rinsing process of supplying a rinsing liquid on the substrate. Meanwhile, conventionally, during the above processes, a treating space at which the substrate is positioned was continuously exhausted for a purpose of fume removal and the like, and therefore, there occurred a problem in which a front surface of the substrate was not wetted during the puddle process and an empty space (=on which a development did not occur) occurred locally. SUMMARY Embodiments of the inventive concept provide a substrate treating method on which a portion on which a development is not performed is not generated, among a front surface of a substrate during a puddle process. The technical objectives of the inventive concept are not limited to the above-mentioned ones, and the other unmentioned technical objects will become apparent to those skilled in the art from the following description. The inventive concept provides a substrate treating method. The substrate treating method includes a positioning a substrate in a treating space; forming a liquid film of a treating liquid on the substrate by supplying the treating liquid to a rotating substrate; and puddling including stopping the supplying of the treating liquid and reacting a thin film on the substrate with the liquid film on the substrate, and wherein an exhaust pressure provided at the treating space during the puddling is lower than an exhaust pressure provided at the treating space during the forming of the liquid film. In an embodiment, the exhaust pressure provided at the treating space during the puddling is zero. In an embodiment, the substrate treating method further including: rinsing including supplying a rinsing liquid to the substrate which has been subject to the puddling and wherein an exhaust pressure provided at the treating space during the rising is higher than the exhaust pressure provided at the treating space during the puddling. In an embodiment, the supplying of the treating liquid to the rotating substrate in the forming of the liquid film includes supplying the treating liquid to the substrate while changing supply position from an edge region of the substrate to a central region. In an embodiment, the forming of the liquid film and the puddling are repeated N (N≥2) times. In an embodiment, N is in the range of 2≤N≤5. In an embodiment, the treating liquid is provided as a developing liquid. In an embodiment, the rinsing liquid is provided as a pure water. In an embodiment, the substrate treating method further includes: drying the substrate which has been subjected to the rinsing. In an embodiment, the substrate rotates at a speed of about 30 rpm or less in the forming of the liquid film. In an embodiment, the substrate rotates at a speed of about 30 rpm or less or does not rotate in the puddling. The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing; a cup disposed within the housing and providing a treating space; a support plate disposed within the treating space and supporting and rotating the substrate; a first nozzle for spraying a treating liquid to a substrate mounted on the support plate; an exhaust pipe for exhausting an inside of the cup; a pump coupled to the exhaust pipe; a valve for opening and closing the exhaust pipe; and a controller configured to control the support plate, the first nozzle, the pump, and the valve, and wherein the controller controls so an exhaust pressure provided at the treating space while a liquid layer of the treating liquid supplied to the substrate reacts with a thin film of the substrate, is lower than an exhaust pressure provided at the treating space while the treating liquid is supplied to the substrate. In an embodiment, the controller controls the exhaust pressure provided at the treating space while the liquid la