US-12625640-B2 - Operating memory die based on temperature data

US12625640B2US 12625640 B2US12625640 B2US 12625640B2US-12625640-B2

Abstract

Methods, systems, and devices for operating memory die based on temperature data are described. A memory system may include a set of temperature sensors each corresponding to one of a set of memory dies. A controller at the memory system may receive, from the set of temperature sensors, temperatures measured at the set of memory dies. Then the controller may identify that an operation of a first memory die is associated with an increased likelihood of errors based on the temperature measured at the first memory die. In response, the controller may adjust a parameter for operating the first memory die from a first value to a second value associated with a decreased operating temperature and operate the first memory die according to the second value of the parameter while operating one or more of the other memory dies in the set according to the first value of the parameter.

Inventors

Poorna Kale

Assignees

MICRON TECHNOLOGY, INC.

Dates

Publication Date: 20260512
Application Date: 20220224

Claims (20)

1 . A method, comprising: receiving, from a plurality of temperature sensors corresponding to a plurality of memory dies, temperatures measured at the plurality of memory dies, the temperatures including a first temperature measured at a first memory die of the plurality of memory dies; identifying, based at least in part on the measured temperatures and second temperatures previously measured at the plurality of memory dies, durations that the plurality of memory dies have been at respective measured temperatures; receiving a set of additional parameters corresponding to the plurality of memory dies, wherein the set of additional parameters include comparative quantities of different types of access operations performed at the plurality of memory dies; identifying, based at least in part on receiving the temperatures, identifying the durations, and receiving the set of additional parameters, a likelihood of errors at the first memory die based at least in part on operations of the first memory die at the first temperature; adjusting, based at least in part on determining that the likelihood of errors at the first memory die based at least in part on operations of the first memory die at the first temperature satisfies a threshold likelihood, an operating parameter of the first memory die from a first value to a second value associated with decreasing an operating temperature of the first memory die from the first temperature measured at the first memory die; and operating, based at least in part on the adjusting, the first memory die according to the second value of the operating parameter and concurrently operating one or more second memory dies from the plurality of memory dies according to the first value of the operating parameter.
2 . The method of claim 1 , wherein: adjusting the operating parameter from the first value to the second value comprises decreasing a rate of executing access operations from a first rate of executing access operations to a second rate of executing access operations; operating the first memory die according to the second value of the operating parameter comprises operating the first memory die according to the second rate of executing access operations; and concurrently operating the one or more second memory dies according to the first value of the operating parameter comprises operating the one or more second memory dies according to the first rate of executing access operations.
3 . The method of claim 1 , wherein: adjusting the operating parameter from the first value to the second value comprises decreasing a quantity of access operations executed by the first memory die over a duration from a first quantity of access operations to a second quantity of access operations; operating the first memory die according to the second value of the operating parameter comprises operating the first memory die to execute the second quantity of access operations over the duration; and concurrently operating the one or more second memory dies according to the first value of the operating parameter comprises operating the one or more second memory dies to execute the first quantity of access operations over the duration.
4 . The method of claim 3 , further comprising: increasing a quantity of access operations executed by a third memory die over the duration from the first quantity of access operations to a third quantity of access operation based at least in part on the decreasing; and operating, concurrent with operating the first memory die to execute the second quantity of access operations over the duration and operating the one or more second memory dies to execute the first quantity of access operations over the duration, the third memory die to execute the third quantity of access operations over the duration.
5 . The method of claim 4 , further comprising: identifying the third memory die based at least in part on a second temperature measured by one of the plurality of temperature sensors.
6 . The method of claim 1 , wherein: adjusting the operating parameter from the first value to the second value comprises adjusting a threshold voltage associated with access operations at the first memory die from a first threshold voltage to a second threshold voltage; operating the first memory die according to the second value of the operating parameter comprises operating the first memory die according to the second threshold voltage; and concurrently operating the one or more second memory dies according to the first value of the operating parameter comprises operating the one or more second memory dies according to the first threshold voltage.
7 . The method of claim 6 , wherein the first threshold voltage is greater than the second threshold voltage.
8 . The method of claim 1 , further comprising: analyzing, using a machine learning algorithm, sets of parameters corresponding to the plurality of memory dies to determine likelihoods of errors associated with the plurality of memory dies based at least in part on operations of the plurality of memory dies at the temperatures measured at the plurality of memory dies, wherein identifying the likelihood of errors is based at least in part on the analyzing.
9 . The method of claim 8 , wherein the sets of parameters comprises an absolute temperature of a corresponding memory die, a difference between a second temperature during a write operation and a third temperature during a read operation at the corresponding memory die, types of operations performed at the corresponding memory die, a quantity of errors over a duration at the corresponding memory die, or a combination thereof.
10 . The method of claim 1 , further comprising: operating the plurality of memory dies according to the first value of the operating parameter, wherein receiving the temperatures is based at least in part on operating the plurality of memory dies according to the first value of the operating parameter.
11 . An apparatus, comprising: a plurality of memory dies; a plurality of temperature sensors each coupled with one of the plurality of memory dies and configured to measure a temperature at the plurality of memory dies; and a controller coupled with the plurality of memory dies and the plurality of temperature sensors, the controller configured to: receive, from the plurality of temperature sensors, temperatures measured at the plurality of memory dies, the temperatures including a first temperature measured at a first memory die of the plurality of memory dies; identify, based at least in part on the measured temperatures and second temperatures previously measured at the plurality of memory dies, durations that the plurality of memory dies have been at respective measured temperatures; receive a set of additional parameters corresponding to the plurality of memory dies, wherein the set of additional parameters include comparative quantities of different types of access operations performed at the plurality of memory dies; identify, based at least in part on receiving the temperatures, identifying the durations, and receiving the set of additional parameters, a likelihood of errors at the first memory die based at least in part on operations of the first memory die at the first temperature; adjust, based at least in part on determining that the likelihood of errors at the first memory die based at least in part on operations of the first memory die at the first temperature satisfies a threshold likelihood, an operating parameter of the first memory die from a first value to a second value associated with decreasing an operating temperature of the first memory die from the first temperature measured at the first memory die; and operate, based at least in part on the adjusting, the first memory die according to the second value of the operating parameter and concurrently operate one or more second memory dies from the plurality of memory dies according to the first value of the operating parameter.
12 . The apparatus of claim 11 , wherein: to adjust the operating parameter from the first value to the second value, the controller is configured to decrease a rate of executing access operations from a first rate of executing access operations to a second rate of executing access operations; to operate the first memory die according to the second value of the operating parameter, the controller is configured to operate the first memory die according to the second rate of executing access operations; and to concurrently operate the one or more second memory dies according to the first value of the operating parameter, the controller is configured to operate the one or more second memory dies according to the first rate of executing access operations.
13 . The apparatus of claim 11 , wherein: to adjust the operating parameter from the first value to the second value, the controller is configured to decrease a quantity of access operations executed by the first memory die over a duration from a first quantity of access operations to a second quantity of access operations; to operate the first memory die according to the second value of the operating parameter, the controller is configured to operate the first memory die to execute the second quantity of access operations over the duration; and to concurrently operate the one or more second memory dies according to the first value of the operating parameter, the controller is configured to operate the one or more second memory dies to execute the first quantity of access operations over the duration.
14 . The apparatus of claim 13 , wherein the controller is further configured to: increase a quantity of access operations executed by a third memory die over the duration from the first quantity of access operations to a third quantity of access operation based at least in part on the decreasing; and operate, concurrent with operating the first memory die to execute the second quantity of access operations over the duration and operating the one or more second memory dies to execute the first quantity of access operations over the duration, the third memory die to execute the third quantity of access operations over the duration.
15 . The apparatus of claim 14 , wherein the controller is further configured to: identify the third memory die based at least in part on a second temperature measured by one of the plurality of temperature sensors.
16 . The apparatus of claim 11 , wherein: to adjust the operating parameter from the first value to the second value, the controller is configured to adjust a threshold voltage associated with access operations at the first memory die from a first threshold voltage to a second threshold voltage; to operate the first memory die according to the second value of the operating parameter, the controller is configured to operate the first memory die according to the second threshold voltage; and to concurrently operate the one or more second memory dies according to the first value of the operating parameter, the controller is configured to operate the one or more second memory dies according to the first threshold voltage.
17 . The apparatus of claim 16 , wherein the first threshold voltage is greater than the second threshold voltage.
18 . The apparatus of claim 11 , wherein the controller is further configured to: analyze, using a machine learning algorithm, sets of parameters corresponding to the plurality of memory dies to determine likelihoods of errors associated with the plurality of memory dies based at least in part on operations of the plurality of memory dies at the temperatures measured at the plurality of memory dies, wherein identifying the likelihood of errors is based at least in part on the analyzing.
19 . The apparatus of claim 18 , wherein the sets of parameters comprises an absolute temperature of a corresponding memory die, a difference between a second temperature during a write operation and a third temperature during a read operation at the corresponding memory die, types of operations performed at the corresponding memory die, a quantity of errors over a duration at the corresponding memory die, or a combination thereof.
20 . The apparatus of claim 11 , wherein the controller is further configured to: operate the plurality of memory dies according to the first value of the operating parameter, wherein receiving the temperatures is based at least in part on operating the plurality of memory dies according to the first value of the operating parameter.

Description

FIELD OF TECHNOLOGY The following relates to one or more systems for memory, including operating memory die based on temperature data. BACKGROUND Memory devices are widely used to store information in various electronic devices such as computers, user devices, wireless communication devices, cameras, digital displays, and the like. Information is stored by programming memory cells within a memory device to various states. For example, binary memory cells may be programmed to one of two supported states, often corresponding to a logic 1 or a logic 0. In some examples, a single memory cell may support more than two possible states, any one of which may be stored by the memory cell. To access information stored by a memory device, a component may read (e.g., sense, detect, retrieve, identify, determine, evaluate) the state of one or more memory cells within the memory device. To store information, a component may write (e.g., program, set, assign) one or more memory cells within the memory device to corresponding states. Various types of memory devices exist, including magnetic hard disks, random access memory (RAM), read-only memory (ROM), dynamic RAM (DRAM), synchronous dynamic RAM (SDRAM), static RAM (SRAM), ferroelectric RAM (FeRAM), magnetic RAM (MRAM), resistive RAM (RRAM), flash memory, phase change memory (PCM), 3-dimensional cross-point memory (3D cross point), not- or (NOR) and not- and (NAND) memory devices, and others. Memory devices may be described in terms of volatile configurations or non-volatile configurations. Volatile memory cells (e.g., DRAM) may lose their programmed states over time unless they are periodically refreshed by an external power source. Non-volatile memory cells (e.g., NAND) may maintain their programmed states for extended periods of time even in the absence of an external power source. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 illustrates an example of a system that supports operating memory die based on temperature data in accordance with examples as disclosed herein. FIG. 2 illustrates an example of a memory system that supports operating memory die based on temperature data in accordance with examples as disclosed herein. FIG. 3 illustrates an example of a flowchart that supports operating memory die based on temperature data in accordance with examples as disclosed herein. FIG. 4 shows a block diagram of a memory system that supports operating memory die based on temperature data in accordance with examples as disclosed herein. FIG. 5 shows a flowchart illustrating a method or methods that support operating memory die based on temperature data in accordance with examples as disclosed herein. DETAILED DESCRIPTION The reliability of a memory system may be impacted by temperature. For example, a memory system that is a higher temperature may store data less reliably when compared to a memory system that is a lower or more temperate temperature. In another example, a memory system that is exposed to a large temperature range may store data less reliably when compared to a memory system that is exposed to a smaller temperature range. Some memory systems may adjust a parameter for operating the memory system when exposed to temperatures that exceed a threshold to decrease the effects of the temperature on the operations of the memory system. For example, the memory system may decrease a rate of performing access operations when the temperature of the memory system exceeds the threshold. In some instances, adjusting the operations of the memory system in response to the temperature exceeding the threshold may improve a reliability of the memory system (e.g., by decreasing the temperature of the memory system). Systems, techniques, and devices are described herein for identifying one or more memory dies of a memory system that are associated with an increased likelihood for errors (e.g., a decreased reliability) based on the measured temperatures of the memory dies. That is, the memory system may identify a memory die as being associated with an increased likelihood for errors based on a combination of the measured temperature of the memory die and one or more additional parameters (e.g., previous measured temperatures of the memory die, a quantity of errors previously-detected at the memory die, a type of operations previously-performed at the memory die). Based on identifying the one or more memory dies, the memory system may adjust the operations of the memory dies that are identified as being associated with the increased likelihood of errors (e.g., by adjusting one or more operating parameters to values associated with decreased temperatures). Additionally, the memory system may continue to operate other memory dies (e.g., that were not identified as being associated with the increased likelihood for errors) without adjusting operating parameters to values associated with decreased temperatures. In some cases, adjusting the operations of memory dies based parameters in add