US-12625642-B2 - Temperature-based read disturb operations

US12625642B2US 12625642 B2US12625642 B2US 12625642B2US-12625642-B2

Abstract

Aspects of the present disclosure configure a system component, such as a memory sub-system controller, to provide adaptive media management based on temperature-related memory component capabilities. The controller determines a read disturb condition criterion associated with an individual memory component of a set of memory components and determines a temperature of a memory sub-system comprising the set of memory components. The controller adjusts the read disturb condition criterion based on the temperature and program erase cycles (PEC) of the memory sub-system and performs an individual media management operation on the individual memory component in response to determining that the adjusted read disturb condition criterion has been satisfied.

Inventors

Christina Papagianni
Murong Lang
Zhenming Zhou

Assignees

MICRON TECHNOLOGY, INC.

Dates

Publication Date: 20260512
Application Date: 20240624

Claims (19)

1 . A system comprising: a set of memory components of a memory sub-system; and a processing device operatively coupled to the set of memory components, the processing device being programmed to perform operations comprising: determining a read disturb condition criterion associated with an individual memory component of the set of memory components; determining a temperature of the memory sub-system; adjusting the read disturb condition criterion based on the temperature of the memory sub-system, the adjusting of the read disturb criterion comprising selecting between a first read count threshold value and a second read count threshold value to trigger a read disturb operation based on the temperature of the memory sub-system; and performing an individual media management operation on the individual memory component based on determining that the adjusted read disturb condition criterion has been satisfied, the individual media management operation comprising reading data from only a subset of word lines (WLs), that are associated with increased temperature sensitivity relative to other WLs, to compute an error rate for the read disturb operation.
2 . The system of claim 1 , wherein the adjusted read disturb condition criterion comprises an adjusted read count threshold.
3 . The system of claim 2 , the operations comprising: accessing a current read counter associated with the individual memory component; and determining that the current read counter transgresses the adjusted read count threshold, the adjusted read disturb condition criterion being satisfied in response to determining that the current read counter transgresses the adjusted read count threshold.
4 . The system of claim 3 , the operations comprising: incrementing the current read counter each time a read operation is performed for the individual memory component.
5 . The system of claim 1 , wherein the individual media management operation comprises a read disturb operation comprising: reading data from the individual memory component; and computing an error rate for the data read from the individual memory component.
6 . The system of claim 5 , the operations comprising: comparing the error rate to an error rate threshold; and refreshing or folding the data stored in the individual memory component in response to comparing the error rate to the error rate threshold.
7 . The system of claim 5 , the operations comprising: identifying a subset of WLs of the individual memory component that are associated with increased temperature sensitivity relative to other WLs of the individual memory component.
8 . The system of claim 7 , the operations comprising: reading the data from only the subset of WLs to compute the error rate for the read disturb operation.
9 . The system of claim 1 , wherein the set of memory components comprises one or more memory blocks.
10 . The system of claim 1 , the operations comprising: accessing a temperature threshold; determining whether the temperature of the memory sub-system is below the temperature threshold; and setting the read disturb condition criterion to a first read disturb condition criterion in response to determining that the temperature of the memory sub-system is below the temperature threshold.
11 . The system of claim 10 , the operations comprising: setting the read disturb condition criterion to a second read disturb condition criterion in response to determining that the temperature of the memory sub-system is above the temperature threshold.
12 . The system of claim 11 , wherein the second read disturb condition criterion is selected independently of a program erase count (PEC) associated with the individual memory component in response to determining that the temperature of the memory sub-system is above the temperature threshold.
13 . The system of claim 11 , the operations comprising: computing a program erase count (PEC) associated with the individual memory component; and selecting the second read disturb condition criterion from a plurality of criteria based on the PEC associated with the individual memory component.
14 . The system of claim 13 , the operations comprising: determining that the PEC corresponds to a beginning of life (BOL) of the individual memory component; and selecting the first read count threshold value as the second read disturb condition.
15 . The system of claim 14 , the operations comprising: determining that the PEC corresponds to an end of life (EOL) of the individual memory component; and in response to determining that the PEC corresponds to the EOL, selecting the second read count threshold value as the second read disturb condition, the second read count threshold value being greater than the first read count threshold value.
16 . The system of claim 1 , the operations comprising: determining that a program-erase count (PEC) corresponds to an end of life (EOL) of the individual memory component; and in response to determining that the PEC corresponds to the EOL of the individual memory component, selecting the second read count threshold value, the second read count threshold value being greater than the first read count threshold value.
17 . A method comprising: determining a read disturb condition criterion associated with an individual memory component of a set of memory components; determining a temperature of a memory sub-system comprising the set of memory components; adjusting the read disturb condition criterion based on the temperature of the memory sub-system, the adjusting of the read disturb criterion comprising selecting between a first read count threshold value and a second read count threshold value to trigger a read disturb operation based on the temperature of the memory sub-system; and performing an individual media management operation on the individual memory component based on determining that the adjusted read disturb condition criterion has been satisfied, the individual media management operation comprising reading data from only a subset of word lines (WLs), that are associated with increased temperature sensitivity relative to other WLs, to compute an error rate for the read disturb operation.
18 . The method of claim 17 , wherein the adjusted read disturb condition criterion comprises an adjusted read count threshold.
19 . A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising: determining a read disturb condition criterion associated with an individual memory component of a set of memory components; determining a temperature of a memory sub-system comprising the set of memory components; adjusting the read disturb condition criterion based on the temperature of the memory sub-system, the adjusting of the read disturb criterion comprising selecting between a first read count threshold value and a second read count threshold value to trigger a read disturb operation based on the temperature of the memory sub-system, the second read count threshold value being selected as in response to determining that a program-erase count corresponds to an end-of-life of the individual memory component, the second read count threshold value being greater than the first read count threshold value; and performing an individual media management operation on the individual memory component based on determining that the adjusted read disturb condition criterion has been satisfied.

Description

PRIORITY APPLICATION This application claims the benefit of priority to U.S. Provisional Application Ser. No. 63/523,553, filed Jun. 27, 2023, which is incorporated herein by reference in its entirety. TECHNICAL FIELD Examples of the disclosure relate generally to memory sub-systems and, more specifically, to providing temperature-based media management for memory components, such as memory dies or memory blocks. BACKGROUND A memory sub-system can be a storage system, such as a solid-state drive (SSD), and can include one or more memory components that store data. The memory components can be, for example, non-volatile memory components and volatile memory components. In general, a host system can utilize a memory sub-system to store data on the memory components and to retrieve data from the memory components. BRIEF DESCRIPTION OF THE DRAWINGS The present disclosure will be understood more fully from the detailed description given below and from the accompanying drawings of various embodiments of the disclosure. FIG. 1 is a block diagram illustrating an example computing environment including a memory sub-system, in accordance with some examples. FIG. 2 is a block diagram of an example media operations manager, in accordance with some examples. FIGS. 3-4 are flow diagrams of example methods to perform media management operations based on temperature of the memory sub-system, in accordance with some examples. FIG. 5 is a block diagram illustrating a diagrammatic representation of a machine in the form of a computer system within which a set of instructions can be executed for causing the machine to perform any one or more of the methodologies discussed herein, in accordance with some examples. DETAILED DESCRIPTION Aspects of the present disclosure configure a system component, such as a memory sub-system controller, to perform memory management operations on different groups of memory components (e.g., memory dies and/or memory blocks) based on their respective read disturb counts adjusted based on temperature and/or program erase cycle (PEC) count values. The memory sub-system controller can determine a current temperature of the memory sub-system that includes the memory components and can access a table that maps read disturb condition criteria (e.g., read disturb count thresholds) with different temperature ranges and/or PEC count values. The memory sub-system controller can select or identify a read disturb condition criterion for an individual memory component based on the table and can, in response, determine that the read disturb condition criterion for the individual memory component is satisfied. In such cases, the memory sub-system controller can perform an individual media management operation on the individual memory component, such as by performing a read disturb scan operation. This enables the controller to dynamically select the frequency at which read disturb scan operations or other memory management operations are performed for the memory sub-system based on temperature of the memory sub-system and/or the PEC count values of individual components of the memory sub-system, which improves the overall efficiency of operating the memory sub-system. Namely, rather than applying the same read disturb condition criterion to all of the memory components, the memory sub-system controller can adjust that criterion on the basis of temperature and PEC count values to avoid having to perform read disturb operations when not necessary or to ensure the read disturb operations are performed in temperature-critical states. A memory sub-system can be a storage device, a memory module, or a hybrid of a storage device and memory module. Examples of storage devices and memory modules are described below in conjunction with FIG. 1. In general, a host system can utilize a memory sub-system that includes one or more memory components, such as memory devices (e.g., memory dies) that store data. The host system can send access requests (e.g., write command, read command) to the memory sub-system, such as to store data at the memory sub-system and to read data from the memory sub-system. The data (or set of data) specified by the host is hereinafter referred to as “host data,” “application data,” or “user data”. Together with the data written to each memory component or group of memory components, the memory sub-system or host can measure and store the current write temperature. In some examples, different memory components can store data that is associated with different write temperatures as temperature naturally drifts as data is written. The different memory components or memory blocks can each store a respective read count value indicating the quantity or number of times the respective memory component or memory block has been read. This read count value can be compared against a read disturb condition criterion (e.g., a read count threshold) which can be used to control when read disturb scan operations are