US-12626771-B2 - Memory devices and operation methods thereof, and memory systems

Abstract

The present disclosure provides memory devices and operation methods thereof, and memory systems. A peripheral circuit of an example memory device includes: a page buffer including a plurality of partitions, wherein each partition is configured to receive a clock signal and output a return clock signal based on the clock signal; a first branch node connected with two partitions of the plurality of partitions, and configured to combine the return clock signals outputted by the two partitions to generate a first combined clock signal; a first clock path with two ends respectively connected with the first branch node and an input/output node, and configured to transmit the first combined clock signal to the input/output node; a second branch node; and a second clock path.

Inventors

• Shu Xie

Assignees

• YANGTZE MEMORY TECHNOLOGIES CO., LTD.

Dates

Publication Date

20260512

Application Date

20240516

Priority Date

20240108

Claims (20)

1. 1 . A memory device, comprising: a memory array; and a peripheral circuit coupled with the memory array and comprising: a page buffer comprising a plurality of partitions, each of which configured to receive a clock signal and output a return clock signal based on the clock signal; a first branch node connected with two partitions of the plurality of partitions, and configured to combine return clock signals outputted by the two partitions to generate a first combined clock signal; a first clock path, wherein two ends of the first clock path are respectively connected with the first branch node and an input/output node, and the first clock path is configured to transmit the first combined clock signal to the input/output node; a second branch node connected with other two partitions of the plurality of partitions, and configured to combine return clock signals outputted by the other two partitions to generate a second combined clock signal; and a second clock path, wherein two ends of the second clock path are respectively connected with the second branch node and the input/output node, and the second clock path is configured to transmit the second combined clock signal to the input/output node.
2. 2 . The memory device of claim 1 , wherein the peripheral circuit further comprises: a third branch node, wherein the first clock path and the second clock path both pass through the third branch node, wherein a portion of the first clock path that is located between the third branch node and the input/output node is arranged parallel to a portion of the second clock path that is located between the third branch node and the input/output node; the portion of the first clock path that is located between the third branch node and the input/output node is configured to transmit the first combined clock signal to the input/output node; and the portion of the second clock path that is located between the third branch node and the input/output node is configured to transmit the second combined clock signal to the input/output node.
3. 3 . The memory device of claim 1 , wherein the first branch node is further configured to combine data signals outputted by the two partitions to generate a first combined data signal; the second branch node is further configured to combine data signals outputted by the other two partitions to generate a second combined data signal; and the peripheral circuit further comprises: a first data path arranged parallel to the first clock path and configured to transmit the first combined data signal to the input/output node; and a second data path arranged parallel to the second clock path and configured to transmit the second combined data signal to the input/output node.
4. 4 . The memory device of claim 3 , wherein the input/output node comprises: a first match circuit configured to match the first combined clock signal and the first combined data signal; and a second match circuit configured to match the second combined clock signal and the second combined data signal.
5. 5 . The memory device of claim 4 , wherein the peripheral circuit further comprises: a data temporary storage; a third clock path, wherein two ends of the third clock path are respectively connected with the input/output node and the data temporary storage, and the third clock path is configured to transmit the first combined clock signal to the data temporary storage; a fourth clock path, wherein two ends of the fourth clock path are respectively connected with the input/output node and the data temporary storage, and the fourth clock path is configured to transmit the second combined clock signal to the data temporary storage; a third data path, wherein two ends of the third data path are respectively connected with the input/output node and the data temporary storage, and the third data path is configured to transmit the first combined data signal to the data temporary storage; and a fourth data path, wherein two ends of the fourth data path are respectively connected with the input/output node and the data temporary storage, and the fourth data path is configured to transmit the second combined data signal to the data temporary storage.
6. 6 . The memory device of claim 5 , wherein the data temporary storage comprises a plurality of first temporary storage areas and a plurality of second temporary storage areas; the first temporary storage areas and the second temporary storage areas are alternately arranged; the plurality of first temporary storage areas are configured to receive a first control signal and the first combined clock signal, and receive the first combined data signal based on the first control signal and the first combined clock signal; and the plurality of second temporary storage areas are configured to receive a second control signal and the second combined clock signal, and receive the second combined data signal based on the second control signal and the second combined clock signal.
7. 7 . The memory device of claim 2 , wherein the input/output node is configured to receive a first clock signal; and the peripheral circuit further comprises: a fifth clock path, wherein two ends of the fifth clock path are respectively connected with the input/output node and the third branch node, and the fifth clock path is configured to transmit the first clock signal to the third branch node; the third branch node is configured to generate in parallel a first clock sub-signal and a second clock sub-signal based on the first clock signal; a sixth clock path, wherein two ends of the sixth clock path are respectively connected with the third branch node and the first branch node, and the sixth clock path is configured to transmit the first clock sub-signal to the first branch node; and a seventh clock path, wherein two ends of the seventh clock path are respectively connected with the third branch node and the second branch node, and the seventh clock path is configured to transmit the second clock sub-signal to the second branch node; and a length of the sixth clock path is different from a length of the seventh clock path.
8. 8 . The memory device of claim 7 , wherein the input/output node is configured to receive a first data signal; and the peripheral circuit further comprises: a fifth data path arranged parallel to the fifth clock path, and configured to transmit the first data signal to the third branch node; the third branch node is further configured to equally divide the first data signal into a first data sub-signal and a second data sub-signal; a sixth data path arranged parallel to the sixth clock path and configured to transmit the first data sub-signal to the first branch node; and a seventh data path, wherein two ends of the seventh data path are respectively connected with the third branch node and the second branch node, and the seventh data path is configured to transmit the second data sub-signal to the second branch node.
9. 9 . The memory device of claim 8 , wherein a bit width of the fifth data path is greater than or equal to twice the bit width of the sixth data path or twice the bit width of the seventh data path.
10. 10 . The memory device of claim 2 , comprising a pad area and a memory plane area arranged in a first direction, wherein the pad area comprises the input/output node and the third branch node; the memory plane area comprises the page buffer, the first branch node, and the second branch node; the two partitions are symmetrically distributed on two opposite sides of the first branch node in a second direction; the other two partitions are symmetrically distributed on two opposite sides of the second branch node in the second direction; and the second direction is perpendicularly to the first direction.
11. 11 . The memory device of claim 1 , wherein a partition comprises a frequency divider configured to receive the clock signal and generate the return clock signal based on the clock signal.
12. 12 . The memory device of claim 1 , wherein the first branch node and the second branch node both comprise an OR gate; and an OR gate of the first branch node is configured to combine the return clock signals outputted by the two partitions to generate the first combined clock signal, and an OR gate of the second branch node is configured to combine the return clock signals outputted by the other two partitions to generate the second combined clock signal.
13. 13 . A memory system, comprising: at least one memory device, comprising: a memory array; and a peripheral circuit coupled with the memory array and comprising: a page buffer comprising a plurality of partitions, each of which configured to receive a clock signal and output a return clock signal based on the clock signal; a first branch node connected with two partitions of the plurality of partitions, and configured to combine return clock signals outputted by the two partitions to generate a first combined clock signal; a first clock path, wherein two ends of the first clock path are respectively connected with the first branch node and an input/output node, and the first clock path is configured to transmit the first combined clock signal to the input/output node; a second branch node connected with other two partitions of the plurality of partitions, and configured to combine return clock signals outputted by the other two partitions to generate a second combined clock signal; and a second clock path, wherein two ends of the second clock path are respectively connected with the second branch node and the input/output node, and the second clock path is configured to transmit the second combined clock signal to the input/output node; and a memory controller coupled with the at least one memory device and configured to control the memory device.
14. 14 . A method of operating a memory device, comprising: receiving a clock signal and outputting a return clock signal based on the clock signal, by a partition of a page buffer; combining return clock signals outputted by two partitions of a plurality of partitions to generate a first combined clock signal; transmitting the first combined clock signal to an input/output node; combining return clock signals outputted by other two partitions of the plurality of partitions to generate a second combined clock signal; and transmitting the second combined clock signal to the input/output node.
15. 15 . The method of claim 14 , wherein the transmitting the first combined clock signal to the input/output node, and the transmitting the second combined clock signal to the input/output node comprise: transmitting in parallel the first combined clock signal and the second combined clock signal to the input/output node.
16. 16 . The method of claim 14 , further comprising: combining data signals outputted by the two partitions to generate a first combined data signal; combining data signals outputted by the other two partitions to generate a second combined data signal; transmitting the first combined data signal to the input/output node; and transmitting the second combined data signal to the input/output node.
17. 17 . The method of claim 16 , further comprising: matching the first combined clock signal and the first combined data signal; and matching the second combined clock signal and the second combined data signal.
18. 18 . The method of claim 17 , further comprising: transmitting the first combined clock signal and the first combined data signal to a data temporary storage from the input/output node; and transmitting the second combined clock signal and the second combined data signal to the data temporary storage from the input/output node.
19. 19 . The method of claim 18 , further comprising: receiving a first control signal and the first combined clock signal and receiving the first combined data signal based on the first control signal and the first combined clock signal, by a plurality of first temporary storage areas of the data temporary storage; and receiving a second control signal and the second combined clock signal and receiving the second combined data signal based on the second control signal and the second combined clock signal, by a plurality of second temporary storage areas of the data temporary storage, wherein the first temporary storage areas and the second temporary storage areas are alternately arranged.
20. 20 . The method of claim 15 , wherein before receiving the clock signal by partitions of the page buffer and outputting the return clock signal based on the clock signal, the method further comprises: receiving a first clock signal; transmitting the first clock signal to a third branch node from the input/output node; generating in parallel a first clock sub-signal and a second clock sub-signal based on the first clock signal; transmitting the first clock sub-signal to a first branch node; and transmitting the second clock sub-signal to a second branch node.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS The present application claims priority to Chinese Patent Application No. 2024100294691, which was filed Jan. 8, 2024, is titled “MEMORY DEVICE AND ITS OPERATING METHOD, MEMORY SYSTEM,” and is hereby incorporated herein by reference in its entirety. TECHNICAL FIELD The present disclosure relates to the technical field of semiconductors, and in particular, to a memory device and an operation method thereof, and a memory system. BACKGROUND A memory device is a memory apparatus configured to save information in the modern information technology. As a typical non-volatile semiconductor memory, the Not-And (NAND) flash memory has become a mainstream product in the storage market as it has a relatively-high memory density, controllable production costs, appropriate program and erase speeds, and a retention characteristic. SUMMARY In view of this, examples of the present disclosure provide memory devices and operation methods thereof, and memory systems. In a first aspect, examples of the present disclosure provide a memory device. The memory device comprises a memory array and a peripheral circuit coupled with the memory array; and the peripheral circuit comprises: a page buffer, wherein the page buffer comprises a plurality of partitions, and each partition is configured to receive a clock signal and output a return clock signal based on the clock signal; a first branch node connected with two partitions of the plurality of partitions, and configured to combine return clock signals outputted by the two partitions to generate a first combined clock signal; a first clock path, wherein two ends of the first clock path are respectively connected with the first branch node and an input/output node, and the first clock path is configured to transmit the first combined clock signal to the input/output node; a second branch node connected with other two partitions of the plurality of partitions, and configured to combine return clock signals outputted by the other two partitions to generate a second combined clock signal; and a second clock path, wherein two ends of the second clock path are respectively connected with the second branch node and the input/output node, and the second clock path is configured to transmit the second combined clock signal to the input/output node. In one optional implementation, the peripheral circuit further comprises: a third branch node, wherein the first clock path and the second clock path both pass through the third branch node; a portion of the first clock path that is located between the third branch node and the input/output node is arranged parallel to a portion of the second clock path that is located between the third branch node and the input/output node; the portion of the first clock path that is located between the third branch node and the input/output node is configured to transmit the first combined clock signal to the input/output node; and the portion of the second clock path that is located between the third branch node and the input/output node is configured to transmit the second combined clock signal to the input/output node. In one optional implementation, the first branch node is further configured to combine data signals outputted by the two partitions to generate a first combined data signal; the second branch node is further configured to combine data signals outputted by the other two partitions to generate a second combined data signal; and the peripheral circuit further comprises: a first data path, wherein the first data path is arranged parallel to the first clock path and configured to transmit the first combined data signal to the input/output node; and a second data path, wherein the second data path is arranged parallel to the second clock path and configured to transmit the second combined data signal to the input/output node. In one optional implementation, the input/output node comprises: a first match circuit configured to match the first combined clock signal and the first combined data signal; and a second match circuit configured to match the second combined clock signal and the second combined data signal. In one optional implementation, the peripheral circuit further comprises: a data temporary storage; a third clock path, wherein two ends of the third clock path are respectively connected with the input/output node and the data temporary storage, and the third clock path is configured to transmit the first combined clock signal to the data temporary storage; a fourth clock path, wherein two ends of the fourth clock path are respectively connected with the input/output node and the data temporary storage, and the fourth clock path is configured to transmit the second combined clock signal to the data temporary storage; a third data path, wherein two ends of the third data path are respectively connected with the input/output node and the data temporary storage, and the third data path is configured to tr