US-12626890-B2 - Substrate treating apparatus

US12626890B2US 12626890 B2US12626890 B2US 12626890B2US-12626890-B2

Abstract

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space therein; a support unit disposed within the treating space and configured to support a substrate; and a plasma generation unit configured to generate a plasma from a process gas supplied to the treating space; and wherein the plasma generation unit comprises: a bottom electrode member; and a top electrode member opposite to the bottom electrode member, wherein the top electrode member comprises: an electrode plate including an electrode; a first plate made of a different material from the electrode plate; and a second plate, and wherein the second plate, the electrode plate, and the first plate are stacked on one another.

Inventors

Jin Hee HONG
Yun Sang Kim
Min Sung Jeon
Soon-Cheon Cho
Sung Min Choi
Jung Hoon Park

Assignees

SEMES CO., LTD.

Dates

Publication Date: 20260512
Application Date: 20220420

Claims (16)

1 . A substrate treating apparatus comprising: a chamber having a treating space therein; a support unit disposed within the treating space and configured to support a substrate; and a plasma generation unit configured to generate a plasma from a process gas supplied to the treating space, wherein the plasma generation unit comprises: a bottom electrode member; and a top electrode member having a convex top surface and opposite to the bottom electrode member, wherein the top electrode member comprises: an electrode plate including an electrode; a first plate made of a different material from the electrode plate; and a second plate, wherein the second plate, the electrode plate, and the first plate are stacked on one another, wherein the second plate is adjacent to the treating space of the chamber, wherein the electrode plate is disposed in a space between a top surface of the second plate and a bottom surface of the first plate, wherein a thickness of a center part of the top electrode member relative to a flat bottom surface of the top electrode member and a second thickness of an edge part of the top electrode member relative to the flat bottom surface of the top electrode member are different from each other.
2 . The substrate treating apparatus of claim 1 , wherein a thickness of a center part of the electrode plate and a thickness of an edge part of the electrode plate are different from each other.
3 . The substrate treating apparatus of claim 1 , wherein a thickness of a center part of the first plate and a thickness of an edge part of the first plate are different from each other.
4 . The substrate treating apparatus of claim 1 , wherein a thickness of a center part of the electrode plate and a thickness of an edge area of the electrode plate are different from each other, and wherein a thickness of a center part of the first plate and a thickness of an edge area of the first plate are different from each other.
5 . The substrate treating apparatus of claim 1 , wherein a thickness of a center part of the second plate and a thickness of an edge area of the second plate are different from each other.
6 . The substrate treating apparatus of claim 1 , wherein the apparatus further comprises: a heater located on the top electrode member and generating microwaves to heat a wafer supported by the support unit, and wherein the electrode plate, the first plate, and the second plate are transparent to the microwaves.
7 . The substrate treating apparatus of claim 6 , wherein the first plate is formed of a quartz material, and wherein the second plate is formed of one of a Y2O3, a YSZ (Yttria-stabilized zirconia, ZrO2/Y2O3), a YAG (yttrium aluminum garnet, Y3Al5O12), an Al2O3, a Cr2O3, a Nb2O5, a Si3N3, a mixture thereof and a stack combination thereof.
8 . The substrate treating apparatus of claim 7 , wherein the electrode plate is made of at least one of an Indium Tin Oxide (ITO), an Aluminum-doped Zinc Oxide (AZO), a Fluorine-doped Tin Oxide (FTO), an Antimony Tin Oxide (ATO), an SnO2, a ZnO, an IrO2, an RuO2, a graphene, a metal nanowire, a carbon nano tube (CNT), any mixture thereof and any stack combinations thereof.
9 . A substrate treating apparatus comprising: a chamber having a treating space therein; a support unit disposed within the treating space and configured to support a substrate; and a plasma generation unit configured to generate a plasma from a process gas supplied to the treating space, wherein the plasma generation unit comprises: a bottom electrode member; and a top electrode member opposite to the bottom electrode member, wherein the top electrode member comprises: an electrode plate having a convex top surface and including an electrode; a first plate made of a different material from the electrode plate; and a second plate, wherein the second plate, the electrode plate, and the first plate are stacked on one another, wherein the second plate is adjacent to the treating space of the chamber, wherein the electrode plate is disposed in a space between a top surface of the second plate and a bottom surface of the first plate, wherein a first thickness of a center part of the top electrode member relative to a flat bottom surface of the top electrode member and a second thickness of an edge part of the top electrode member relative to the flat bottom surface of the top electrode member are different, and wherein a difference between the first thickness and the second thickness is 500% or less of the second thickness or 500% or less of the first thickness.
10 . The substrate treating apparatus of claim 9 , wherein a thickness of a center part of the electrode plate and a thickness of an edge part of the electrode plate are different from each other.
11 . The substrate treating apparatus of claim 9 , wherein a thickness of a center part of the first plate and a thickness of an edge part of the first plate are different from each other.
12 . The substrate treating apparatus of claim 9 , wherein a thickness of a center part of the electrode plate and a thickness of an edge area of the electrode plate are different from each other, and wherein a thickness of a center part of the first plate and a thickness of an edge area of the first plate are different.
13 . The substrate treating apparatus of claim 9 , wherein a thickness of a center part of the second plate and a thickness of an edge area of the second plate are different from each other.
14 . The substrate treating apparatus of claim 9 , wherein the apparatus further comprises: a heater located on the top electrode member and generating microwaves to heat a wafer supported by the support unit, and wherein the electrode plate, the first plate, and the second plate are transparent to the microwaves.
15 . The substrate treating apparatus of claim 14 , wherein the first plate is formed of a quartz material, and wherein the second plate is formed of one of a Y2O3, a YSZ (Yttria-stabilized zirconia, ZrO2/Y2O3), a YAG (yttrium aluminum garnet, Y3Al5O12), an Al2O3, a Cr2O3, a Nb2O5, a Si3N3, a mixture thereof and a stack combination thereof.
16 . The substrate treating apparatus of claim 15 , wherein the electrode plate is made of at least one of an Indium Tin Oxide (ITO), an Aluminum-doped Zinc Oxide (AZO), a Fluorine-doped Tin Oxide (FTO), an Antimony Tin Oxide (ATO), an SnO2, a ZnO, an IrO2, an RuO2, a graphene, a metal nanowire, a carbon nano tube (CNT), any mixture thereof and any stack combinations thereof.

Description

BACKGROUND Embodiments of the inventive concept described herein relate to a substrate treating apparatus and substrate treating method using a plasma. In order to manufacture a semiconductor device, a desired pattern is formed on the substrate by performing various processes such as a photolithography process, an etching process, an ashing process, an ion implantation process, a thin film deposition process, and a cleaning process. Among them, the etching process is a process of removing a selected heating region from a film formed on a substrate, and a wet etching and a dry etching are used. An etching device using a plasma is used for the dry etching. In general, in order to generate the plasma, an electromagnetic field is formed in an inner space of the chamber, and the electromagnetic field excites a process gas provided in the chamber into a plasma state. The plasma refers to an ionized gas state made of ions, electrons, radicals, or the like. The plasma is generated by a very high temperature, a strong electric field or a high frequency electromagnetic field. In a semiconductor device manufacturing process, the etching process is performed using the plasma. In a substrate treating apparatus using the plasma as aforementioned, as a method of raising a temperature of the substrate, the temperature of the substrate is raised by using a heating means (heating wire) of a substrate support member on which the substrate is placed. In the case of a conventional method of heating the substrate using a heater, it takes a long time to increase and decrease a temperature, and it is difficult to uniformly heat an entirety of the substrate. To solve this problem, a method of annealing the substrate using microwaves at an upper zone of a chamber is proposed. When such a method is used, a time required for heating is reduced, but a non-uniform heat transfer occurs in the substrate, such that a significant difference in a temperature between an edge part and a center part of the substrate occurs during the process, which causes productivity reduction in a semiconductor chip. Therefore, there is a need to redesign the structural characteristics of a top window and an electrode in the chamber in order to generate a uniform heat distribution by microwaves on an entire surface of the substrate. SUMMARY Embodiments of the inventive concept provide a top window and an electrode structure for improving a uniformity of a heating and a plasma. The technical objectives of the inventive concept are not limited to the above-mentioned ones, and the other unmentioned technical objects will become apparent to those skilled in the art from the following description. The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space therein; a support unit disposed within the treating space and configured to support a substrate; and a plasma generation unit configured to generate a plasma from a process gas supplied to the treating space; and wherein the plasma generation unit comprises: a bottom electrode member; and a top electrode member opposite to the bottom electrode member, wherein the top electrode member comprises: an electrode plate including an electrode; a first plate made of a different material from the electrode plate; and a second plate, and wherein the second plate, the electrode plate, and the first plate are stacked on one another. In an embodiment, a thickness of a center part and a thickness of an edge part in the top electrode member are substantially equal. In an embodiment, the electrode plate, the first plate, and the second plate are provided as a transparent material. In an embodiment, the first plate is provided as a quartz material and the second plate is provided as an etch-resistant material. In an embodiment, the electrode plate is a transparent electrode maintaining a transparency, and the transparent electrode is made of at least one of an ITO, an AZO, an FTO, an ATO, an SnO2, a ZnO, an IrO2, an RuO2, a graphene, a metal nanowire, a CNT, any mixture thereof or any stack combinations thereof. In an embodiment, a thickness of a center part and an edge part of the first plate, a thickness of a center part and an edge area of the second plate, a thickness of a center part and an edge area of the electrode plate are provided to be the same. In an embodiment, the electrode plate is disposed on a top of the second plate. The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space therein; a support unit disposed within the treating space and configured to support a substrate; and a plasma generation unit configured to generate a plasma from a process gas supplied to the treating space; and wherein the plasma generation unit comprises: a bottom electrode member; and a top electrode member opposite to the bottom electrode member, and wherein the top electrode m