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US-12626892-B2 - Substrate processing apparatus

US12626892B2US 12626892 B2US12626892 B2US 12626892B2US-12626892-B2

Abstract

In an exemplary embodiment, a substrate processing apparatus is provided. The substrate processing apparatus includes a processing chamber, a substrate support stage. The piezoelectric element is disposed around an opening of the second nozzle to reduce a cross-sectional area of the opening of the second nozzle in accordance with a voltage applied thereto. The thermoelectric element is disposed between the first collection pipe and the second collection pipe to generate an electromotive force corresponding to a temperature difference between the heat transfer medium in the first collection pipe and the heat transfer medium in the second collection pipe. The drive circuit is configured to apply a voltage corresponding to a magnitude of the electromotive force, to the piezoelectric element.

Inventors

  • Masanori ASAHARA

Assignees

  • TOKYO ELECTRON LIMITED

Dates

Publication Date
20260512
Application Date
20230831
Priority Date
20220905

Claims (7)

  1. 1 . A substrate processing apparatus comprising: a processing chamber; a substrate support stage that is disposed in the processing chamber, includes an upper surface that supports a substrate placed thereon and a lower surface on a side opposite to the upper surface, and provides a first recess and a second recess that open downward; a first supply pipe that includes a first nozzle that opens upward in the first recess and is configured to supply a heat transfer medium to the first recess; a second supply pipe that includes a second nozzle that opens upward in the second recess and is configured to supply the heat transfer medium to the second recess; a first partition that forms a first space including the first recess together with the substrate support stage; a second partition that forms a second space including the second recess together with the substrate support stage; a first collection pipe that is configured to collect the heat transfer medium from the first space; a second collection pipe that is configured to collect the heat transfer medium from the second space; a piezoelectric element that is disposed around an opening of the second nozzle to reduce a cross-sectional area of the opening of the second nozzle in accordance with a voltage applied thereto; a thermoelectric element that is disposed between the first collection pipe and the second collection pipe to generate an electromotive force corresponding to a temperature difference between the heat transfer medium in the first collection pipe and the heat transfer medium in the second collection pipe; and a drive circuit that is configured to apply a voltage corresponding to a magnitude of the electromotive force, to the piezoelectric element.
  2. 2 . The substrate processing apparatus according to claim 1 , further comprising: a circulation device connected to the first supply pipe, the second supply pipe, the first collection pipe, and the second collection pipe, and is configured to supply the heat transfer medium to the first supply pipe and the second supply pipe and to collect the heat transfer medium from the first collection pipe and the second collection pipe.
  3. 3 . The substrate processing apparatus according to claim 1 , further comprising: a second thermoelectric element disposed between the first supply pipe and the first collection pipe to generate a second electromotive force corresponding to a temperature difference between the heat transfer medium in the first supply pipe and the heat transfer medium in the first collection pipe, wherein the thermoelectric element comprises a first thermoelectric element, the electromotive force comprises a first electromotive force, the drive circuit is configured to apply a voltage corresponding to a difference between the second electromotive force and the first electromotive force to the piezoelectric element.
  4. 4 . The substrate processing apparatus according to claim 3 , wherein the drive circuit is a differential amplifier circuit having a pair of inputs for receiving the second electromotive force and the first electromotive force.
  5. 5 . The substrate processing apparatus according to claim 3 , wherein the substrate support stage has at least a first zone including the first recess and a second zone having a plurality of second recesses including the second recess, the substrate processing apparatus includes a plurality of second supply pipes including the second supply pipe, each of the plurality of second supply pipes includes a plurality of second nozzles that open upward in the plurality of second recesses and is configured to supply the heat transfer medium to the plurality of second recesses, the substrate processing apparatus includes a plurality of second partitions including the second partition, each of the plurality of second partitions forms a plurality of second spaces including the plurality of second recesses respectively, together with the substrate support stage, the substrate processing apparatus includes a plurality of second collection pipes including the second collection pipe, each of the plurality of second collection pipes is configured to collect the heat transfer medium from the plurality of second spaces, and the substrate processing apparatus includes a plurality of piezoelectric elements including the piezoelectric element, each of the plurality of piezoelectric elements is disposed around an opening of a corresponding second nozzle among the plurality of second nozzles to reduce a cross-sectional area of the opening of the corresponding second nozzle in accordance with the voltage applied thereto, and the drive circuit is configured to apply the voltage corresponding to the difference to the plurality of piezoelectric elements.
  6. 6 . The substrate processing apparatus according to claim 1 , wherein the piezoelectric element includes a ring-shaped piezoelectric member disposed around the opening, and a pair of electrodes provided along an inner periphery and an outer periphery of the piezoelectric member.
  7. 7 . The substrate processing apparatus according to claim 1 , wherein the piezoelectric element includes a plurality of piezoelectric members arranged along a circumferential direction around the opening, and a plurality of electrodes alternately arranged with the plurality of piezoelectric members, and the plurality of electrodes include a plurality of anodes and a plurality of cathodes alternately arranged along the circumferential direction.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS This application is based on and claims the benefit of priority from Japanese Patent Application No. 2022-140721 filed on Sep. 5, 2022, the entire contents of which are incorporated herein by reference. FIELD Exemplary embodiments of the present disclosure relate to a substrate processing apparatus. BACKGROUND A substrate processing apparatus may include a substrate support stage capable of controlling the temperature of a substrate placed on the substrate support stage. In a substrate processing apparatus described in Japanese Unexamined Patent Publication No. 2016-12593 the temperature of a substrate is controlled by supplying a heat transfer medium prepared at a first temperature and a heat transfer medium prepared at a second temperature higher than the first temperature to a substrate support stage. SUMMARY In an exemplary embodiment, a substrate processing apparatus is provided. The substrate processing apparatus includes a processing chamber, a substrate support stage, a first supply pipe, a second supply pipe, a first partition, a second partition, a first collection pipe, a second collection pipe, a piezoelectric element, a thermoelectric element, and a drive circuit. The substrate support stage is disposed in the processing chamber. The substrate support stage includes an upper surface and a lower surface. The upper surface supports a substrate placed thereon. The lower surface is on a side opposite to the upper surface. The substrate support stage provides a first recess and a second recess. The first recess and the second recess open downward. The first supply pipe includes a first nozzle. The first nozzle opens upward in the first recess. The first supply pipe is configured to supply a heat transfer medium to the first recess. The second supply pipe includes a second nozzle. The second nozzle opens upward in the second recess. The second supply pipe is configured to supply the heat transfer medium to the second recess. The first partition forms a first space together with the substrate support stage. The first space includes the first recess. The second partition forms a second space together with the substrate support stage. The second space includes the second recess. The first collection pipe is configured to collect the heat transfer medium from the first space. The second collection pipe is configured to collect the heat transfer medium from the second space. The piezoelectric element is disposed around an opening of the second nozzle to reduce a cross-sectional area of the opening of the second nozzle in accordance with a voltage applied thereto. The thermoelectric element is disposed between the first collection pipe and the second collection pipe to generate an electromotive force corresponding to a temperature difference between the heat transfer medium in the first collection pipe and the heat transfer medium in the second collection pipe. The drive circuit is configured to apply a voltage corresponding to a magnitude of the electromotive force, to the piezoelectric element. The foregoing summary is illustrative only and is not intended to be in any way limiting. In addition to the illustrative aspects, exemplary embodiments, and features described above, further aspects, exemplary embodiments, and features will become apparent by reference to the drawings and the following detailed description. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a diagram for describing a configuration example of a plasma processing system according to an exemplary embodiment. FIG. 2 is a diagram for describing a configuration example of a capacitively-coupled plasma processing apparatus according to the exemplary embodiment. FIG. 3 is an enlarged cross-sectional view of a portion of a substrate support stage according to the exemplary embodiment. FIG. 4A is a perspective view of a base according to the exemplary embodiment, and FIG. 4B is a partially-broken perspective view of the base according to the exemplary embodiment. FIG. 5 is an exploded perspective view schematically illustrating the base and a heat exchanger according to the exemplary embodiment. FIG. 6 is a perspective view of the heat exchanger according to the exemplary embodiment. FIG. 7A is a plan view of a cell portion of the heat exchanger as an example, and FIG. 7B is a perspective view of the cell portion of the example heat exchanger as the example. FIG. 8 is an enlarged cross-sectional view of a portion of a substrate support stage according to the exemplary embodiment. FIGS. 9A and 9B are end views schematically illustrating a configuration of a piezoelectric element according to the exemplary embodiment, respectively. FIG. 10 is an enlarged cross-sectional view of a portion of a substrate support stage according to another exemplary embodiment. FIG. 11 is a circuit diagram illustrating an example of a drive circuit. FIGS. 12A and 12B are end views schematically illustrating a configuration of a