US-12627266-B2 - Power amplification apparatus and transmitter

US12627266B2US 12627266 B2US12627266 B2US 12627266B2US-12627266-B2

Abstract

Provided are a power amplification apparatus and a transmitter. The power amplification apparatus includes power amplification modules each including a voltage output unit and a power amplification unit; the voltage output unit outputs a first voltage signal (VIN_A) and a second voltage signal (VIN_B). The power amplification unit includes a selector (MUX), a radio frequency processing circuit, and a first switch transistor (M 1 ), the radio frequency processing circuit processes a baseband signal to output a first radio frequency signal to a source of the first switch transistor (M 1 ), and the selector (MUX) is configured to correspondingly strobe the first voltage signal (VIN_A) or the second voltage signal (VIN_B) according to an operating state of the first switch transistor (M 1 ).

Inventors

Xiaoming SI
Nan Liu
Jie Hu

Assignees

SANECHIPS TECHNOLOGY CO., LTD.

Dates

Publication Date: 20260512
Application Date: 20220302
Priority Date: 20210922

Claims (18)

1 . A power amplification apparatus, comprising a power amplification module comprising a voltage output unit and a power amplification unit, wherein the voltage output unit is configured to output a first voltage signal and a second voltage signal; the power amplification unit comprises a selector, a radio frequency processing circuit, and a first switch transistor, an input of the selector is connected to the voltage output unit, an output of the selector is connected to a gate of the first switch transistor, and a source of the first switch transistor is connected to the radio frequency processing circuit; the radio frequency processing circuit is configured to receive and process a baseband signal to output a first radio frequency signal to the source of the first switch transistor; the selector is configured to strobe one of the first voltage signal or the second voltage signal, and output the strobed voltage signal to the gate of the first switch transistor; under the condition that the first switch transistor is in an on state, the selector strobes the first voltage signal, and the first switch transistor amplifies the first radio frequency signal to output a second radio frequency signal from a drain of the first switch transistor; and under the condition that the first switch transistor is in an off state, the selector strobes the second voltage signal.
2 . The power amplification apparatus according to claim 1 , wherein the radio frequency processing circuit comprises a mixer configured to mix a baseband signal with a local oscillator signal to produce the first radio frequency signal.
3 . The power amplification apparatus according to claim 2 , wherein the power amplification apparatus further comprises a control module, and the radio frequency processing circuit comprises a second switch transistor; the control module is configured to output an instruction signal; a gate of the second switch transistor is configured to receive the instruction signal, a source of the second switch transistor is configured to receive the baseband signal, and a drain of the second switch transistor is connected to the mixer; the instruction signal is a turn-on instruction signal or a turn-off instruction signal, and under the condition that the instruction signal output from the control module is a turn-on instruction signal, the first switch transistor and the second switch transistor are both in the on state; and under the condition that the instruction signal output from the control module is a turn-off instruction signal, the first switch transistor and the second switch transistor are both in the off state.
4 . The power amplification apparatus according to claim 3 , wherein the selector is connected to the control module to receive the instruction signal output from the control module; under the condition that the instruction signal output from the control module is a turn-on instruction signal, the selector strobes the first voltage signal; and under the condition that the instruction signal output from the control module is a turn-off instruction signal, the selector strobes the second voltage signal.
5 . The power amplification apparatus according to claim 2 , wherein the radio frequency processing circuit further comprises a third switch transistor, a gate of the third switch transistor is configured to receive the baseband signal, a source of the third switch transistor is grounded, and a drain of the third switch transistor is connected to the mixer.
6 . The power amplification apparatus according to claim 1 , wherein the voltage output unit comprises: a first bias circuit comprising a first resistor, a second resistor and a first output, wherein a first end of the first resistor is connected to a working power supply end, a second end of the first resistor is connected to a first end of the second resistor, a second end of the second resistor is connected to a ground terminal, the first output is disposed between the first resistor and the second resistor, and the first voltage signal is output from the first output; a second bias circuit comprising a third resistor, a fourth resistor and a second output, wherein a first end of the third resistor is connected to the working power supply end, a second end of the third resistor is connected to a first end of the fourth resistor, a second end of the fourth resistor is connected to a ground terminal, the second output is disposed between the third resistor and the fourth resistor, and the second voltage signal is output from the second output.
7 . The power amplification apparatus according to claim 6 , wherein each of the second resistor and the fourth resistor is a variable resistor.
8 . The power amplification apparatus according to claim 6 , wherein the power amplification apparatus further comprises a control module configured to determine a first voltage value corresponding to the first voltage signal according to a saturation current parameter, an on voltage threshold and a drain/source voltage parameter of the first switch transistor, and a power supply voltage parameter, and adjust a resistance value of the second resistor according to the first voltage value, so that the voltage output unit outputs the first voltage signal satisfying the first voltage value; and the control module is further configured to determine a second voltage value corresponding to the second voltage signal according to the power supply voltage parameter and a drain voltage parameter of the first switch transistor, and adjust a resistance value of the fourth resistor according to the second voltage value, so that the voltage output unit outputs the second voltage signal satisfying the second voltage value; wherein the power supply voltage parameter is an output voltage of the working power supply end.
9 . The power amplification apparatus according to claim 1 , wherein a plurality of power amplification modules are provided, and the power amplification apparatus further comprises a control module connected to each of the power amplification module.
10 . A transmitter, characterized in comprising a power amplification apparatus according to claim 1 .
11 . The transmitter according to claim 10 , wherein the radio frequency processing circuit comprises a mixer configured to mix a baseband signal with a local oscillator signal to produce the first radio frequency signal.
12 . The transmitter according to claim 11 , wherein the power amplification apparatus further comprises a control module, and the radio frequency processing circuit comprises a second switch transistor; the control module is configured to output an instruction signal; a gate of the second switch transistor is configured to receive the instruction signal, a source of the second switch transistor is configured to receive the baseband signal, and a drain of the second switch transistor is connected to the mixer; the instruction signal is a turn-on instruction signal or a turn-off instruction signal, and under the condition that the instruction signal output from the control module is a turn-on instruction signal, the first switch transistor and the second switch transistor are both in the on state; and under the condition that the instruction signal output from the control module is a turn-off instruction signal, the first switch transistor and the second switch transistor are both in the off state.
13 . The transmitter according to claim 12 , wherein the selector is connected to the control module to receive the instruction signal output from the control module; under the condition that the instruction signal output from the control module is a turn-on instruction signal, the selector strobes the first voltage signal; and under the condition that the instruction signal output from the control module is a turn-off instruction signal, the selector strobes the second voltage signal.
14 . The transmitter according to claim 11 , wherein the radio frequency processing circuit further comprises a third switch transistor, a gate of the third switch transistor is configured to receive the baseband signal, a source of the third switch transistor is grounded, and a drain of the third switch transistor is connected to the mixer.
15 . The transmitter according to claim 10 , wherein the voltage output unit comprises: a first bias circuit comprising a first resistor, a second resistor and a first output, wherein a first end of the first resistor is connected to a working power supply end, a second end of the first resistor is connected to a first end of the second resistor, a second end of the second resistor is connected to a ground terminal, the first output is disposed between the first resistor and the second resistor, and the first voltage signal is output from the first output; a second bias circuit comprising a third resistor, a fourth resistor and a second output, wherein a first end of the third resistor is connected to the working power supply end, a second end of the third resistor is connected to a first end of the fourth resistor, a second end of the fourth resistor is connected to a ground terminal, the second output is disposed between the third resistor and the fourth resistor, and the second voltage signal is output from the second output.
16 . The transmitter according to claim 15 , wherein each of the second resistor and the fourth resistor is a variable resistor.
17 . The power amplification apparatus according to claim 15 , wherein the power amplification apparatus further comprises a control module configured to determine a first voltage value corresponding to the first voltage signal according to a saturation current parameter, an on voltage threshold and a drain/source voltage parameter of the first switch transistor, and a power supply voltage parameter, and adjust a resistance value of the second resistor according to the first voltage value, so that the voltage output unit outputs the first voltage signal satisfying the first voltage value; and the control module is further configured to determine a second voltage value corresponding to the second voltage signal according to the power supply voltage parameter and a drain voltage parameter of the first switch transistor, and adjust a resistance value of the fourth resistor according to the second voltage value, so that the voltage output unit outputs the second voltage signal satisfying the second voltage value; wherein the power supply voltage parameter is an output voltage of the working power supply end.
18 . The power amplification apparatus according to claim 10 , wherein a plurality of power amplification modules are provided, and the power amplification apparatus further comprises a control module connected to each of the power amplification module.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS The present application is based on and claims priority from the Chinese patent application No. 202111109266.6 filed on Sep. 22, 2021, the entire disclosure of which is incorporated herein by reference. TECHNICAL FIELD The present application relates to the field of communication technology, and particularly relates to a power amplification apparatus and a transmitter. BACKGROUND When a transmitter outputs high power, a switch transistor responsible for outputting the power will generate a significant voltage swing. Taking the switch transistor being an N-metal-oxide-semiconductor (NMOS) field effect transistor as an example, when a drain port of the NMOS switch transistor has a large voltage signal swing, a drain/source voltage Vds of the NMOS switch transistor may exceed a safe operating voltage range of the NMOS switch transistor, which may greatly shorten the service life of the NMOS switch transistor. In some cases, to solve the problem of the shortened service life of the switch transistor due to the large voltage swing, a high-voltage-withstanding MOS switch transistor with a thickened gate oxide layer is typically used in an output stage of the power amplification apparatus, so that three ports of the MOS switch transistor are all ensured to work in a voltage safety range in various application scenarios of the transmitter. However, the high-voltage-withstanding MOS switch transistor with the thickened gate oxide layer has a relatively higher threshold voltage, consumes the voltage margin, and reduces the linear range of the output voltage of the transmitter, and may be not supported in some processes, while the additional gate oxide layer will add an additional mask layer, resulting in increased production cost. In other solutions, a method of reducing the power supply voltage may be adopted to keep the swing of the output signal within a safety range, but this method may greatly deteriorate the voltage linear range of the transmitter, and thus deteriorate a linearity index of the circuit. SUMMARY An embodiment of the present application provides a power amplification apparatus and a transmitter. In a first aspect, an embodiment of the present application provides a power amplification apparatus, including a power amplification module including a voltage output unit and a power amplification unit, wherein the voltage output unit is configured to output a first voltage signal and a second voltage signal; the power amplification unit includes a selector, a radio frequency processing circuit, and a first switch transistor, an input of the selector is connected to the voltage output unit, an output of the selector is connected to a gate of the first switch transistor, and a source of the first switch transistor is connected to the radio frequency processing circuit; the radio frequency processing circuit is configured to receive and process a baseband signal to output a first radio frequency signal to the source of the first switch transistor; the selector is configured to strobe one of the first voltage signal or the second voltage signal, and output the strobed voltage signal to the gate of the first switch transistor; under the condition that the first switch transistor is in an on state, the selector strobes the first voltage signal, and the first switch transistor amplifies the first radio frequency signal to output a second radio frequency signal from a drain of the first switch transistor; and under the condition that the first switch transistor is in an off state, the selector strobes the second voltage signal. In a second aspect, an embodiment of the present application provides a transmitter, including the power amplification apparatus as described in the first aspect. BRIEF DESCRIPTION OF DRAWINGS Accompanying drawings are provided for further understanding of the technical solution of the present application and constitute a part of the specification. Hereinafter, these drawings are intended to explain the technical solution of the present application together with the embodiments of the present application, but should not be considered as a limitation to the technical solution of the present application. FIG. 1 is a schematic diagram showing a voltage signal swing at a drain port of an NMOS switch transistor outputting high power in the existing art; FIG. 2 is a block diagram of a power amplification apparatus according to an embodiment of the present application; FIG. 3 is a schematic structural diagram of a power amplification apparatus according to an embodiment of the present application; FIG. 4 is a schematic structural diagram of a voltage output unit according to an embodiment of the present application; and FIG. 5 is a schematic structural diagram of a power amplification apparatus according to a specific embodiment of the present application. DETAIL DESCRIPTION OF EMBODIMENTS In order to make the objects, technical solutions and advantages o