US-12627291-B2 - Electronic device and its temperature detection device

US12627291B2US 12627291 B2US12627291 B2US 12627291B2US-12627291-B2

Abstract

An electronic device and a temperature detection device thereof are provided. The temperature detection device includes a first resistor, a second resistor, and an operation circuit. The first resistor and the second resistor are coupled in series between a detection end and a first voltage. The first resistor and the second resistor divide a detection voltage on the detection end to generate a monitoring voltage. The operation circuit compares the monitoring voltage with a plurality of reference voltages to generate a plurality of comparison results. The operation circuit performs an operation on the comparison results to generate detection temperature information. The first resistor is a poly-silicon resistor and the second resistor is a silicon carbon (SiC) diffusion resistor.

Inventors

Wei-Fan Chen
Kuo-Chi Tsai

Assignees

LEAP SEMICONDUCTOR CORP.

Dates

Publication Date: 20260512
Application Date: 20221128
Priority Date: 20220927

Claims (18)

1 . A temperature detection device, comprising: a first resistor and a second resistor, coupled in series between a detection end and a first voltage, the first resistor and the second resistor dividing a detection voltage on the detection end so as to generate a monitoring voltage; and an operation circuit, coupled to the first resistor and the second resistor, comparing the monitoring voltage with a plurality of reference voltages so as to generate a plurality of comparison results, and the operation circuit performing an operation on the comparison results so as to generate a detection temperature information, wherein the first resistor is a poly-silicon resistor, and the second resistor is a silicon carbon diffusion resistor.
2 . The temperature detection device according to claim 1 , wherein the operation circuit comprises: a plurality of comparators, respectively receiving the reference voltages and jointly receiving the monitoring voltage, each of the comparators comparing the monitoring voltage with each of the corresponding reference voltages so as to generate each of the comparison results; and a plurality of logic operators, wherein each of the logic operators performs a logic operation on two of the comparison results, and the logic operators respectively generate a plurality of bits of the detection temperature information.
3 . The temperature detection device according to claim 2 , wherein each of the logic operators is an exclusive OR gate or an XNOR gate.
4 . The temperature detection device according to claim 2 , wherein the reference voltages comprise a first reference voltage to an Nth reference voltage in order of magnitude, the comparators comprise a first comparator to an Nth comparator respectively corresponding to the first reference voltage to the Nth reference voltage, and the comparators respectively generate a first comparison result to an Nth comparison result, wherein each of the logic operators receives an i-th comparison result and an i+1-th comparison result, and generates an i-th bit of the detection temperature information, wherein N is a positive integer larger than 1, and i is larger than 0 and smaller than N positive integer.
5 . The temperature detection device according to claim 2 , wherein the operation circuit further comprises: a plurality of transmission switches, respectively coupled to output ends of the logic operators and outputting the bits of the detection temperature information according to a control signal.
6 . The temperature detection device according to claim 5 , wherein the reference voltage generator comprises: a voltage-divider circuit, comprising a first end receiving a second voltage, the voltage-divider circuit comprising a second end receiving a third voltage, and the voltage-divider circuit generating the reference voltages by dividing a difference between the second voltage and the third voltage.
7 . The temperature detection device according to claim 6 , wherein the voltage-divider circuit comprises: a plurality of third resistors, sequentially coupled in series between a second voltage and a third voltage, wherein the third resistors generate the reference voltages by dividing a difference between the second voltage and the third voltage.
8 . The temperature detection device according to claim 7 , wherein the third resistors are poly-silicon resistors.
9 . The temperature detection device according to claim 5 , wherein the reference voltage generator comprises: a plurality of voltage-divider circuits, respectively generating the reference voltages, wherein each of the voltage-divider circuits comprises: a third resistor and a fourth resistor, connected in series between a second voltage and a third voltage to divide a voltage difference between the second voltage and the third voltage so as to generate each of the corresponding reference voltages.
10 . The temperature detection device according to claim 9 , wherein the third resistor and the fourth resistor are poly-silicon resistors.
11 . The temperature detection device according to claim 1 , further comprising: a reference voltage generator, coupled to the operation circuit so as to generate the reference voltages.
12 . The temperature detection device according to claim 1 , wherein a first end of the first resistor is coupled to the detection end, a second end of the first resistor is coupled to a first end of the second resistor, and a second end of the second resistor receives the first voltage.
13 . The temperature detection device according to claim 1 , wherein a first end of the second resistor is coupled to the detection end, a second end of the second resistor is coupled to a first end of the first resistor, and a second end of the first resistor receives the first voltage.
14 . The temperature detection device according to claim 1 , wherein the second resistor is an N-type silicon carbon diffusion resistor or a P-type silicon carbon diffusion resistor.
15 . The temperature detection device according to claim 14 , wherein when the second resistor is a P-type silicon carbon diffusion resistor, the second resistor comprises: a P-type diffusion region, disposed in a drift region.
16 . The temperature detection device according to claim 14 , wherein when the second resistor is an N-type silicon carbon diffusion resistor, the second resistor comprises: an N-type diffusion region, disposed in a well region, wherein the well region is disposed in a drift region.
17 . An electronic device, comprising: the temperature detection device according to claim 1 ; and a power transistor, coupled to the temperature detection device, wherein a first end of the power transistor receives an operation power, and a control end of the power transistor is coupled to the detection end.
18 . The electronic device according to claim 17 , wherein the power transistor, the first resistor, and the second resistor are disposed on a same integrated circuit.

Description

CROSS-REFERENCE TO RELATED APPLICATION This application claims the priority benefit of Taiwan application serial no. 111136452, filed on Sep. 27, 2022. The entirety of the above-mentioned patent application is hereby incorporated by reference herein and made a part of this specification. BACKGROUND Technical Field The disclosure relates to an electronic device and a temperature detection device thereof, and more particularly, to a fast-response electronic device and a temperature detection device thereof. Related Art Power transistors are often operated in high-temperature environments and are therefore particularly sensitive to the upper operating limits of temperature. When transition occurs in a power transistor operating in an environment at the upper limit of temperature, the transistor is likely to be damaged. Based on the above, ambient temperature detection is important for the operation of the power transistor. The key point is whether a response speed of a temperature detection circuit for temperature detection is sufficiently fast to protect the power transistor from damage. However, if the temperature detection circuit is designed to be excessively sensitive, it may cause incorrect operation of the temperature detection operation and erroneously turn off the power transistor. Therefore, how to design a temperature detection circuit that is capable of correctly determination and can quickly respond to over-temperature is a topic for those skilled in the art. SUMMARY The disclosure provides an electronic device and a temperature detection device, which are capable of quickly detecting the temperature. The temperature detection device according to the disclosure includes a first resistor, a second resistor, and an operation circuit. The first resistor and the second resistor are coupled in series between a detection end and a first voltage. The first resistor and the second resistor divide a detection voltage on the detection end so as to generate a monitoring voltage. The operation circuit is coupled to the first resistor and the second resistor, and compares the monitoring voltage with a plurality of reference voltages so as to generate a plurality of comparison results. The operation circuit performs an operation on the comparison results so as to generate a detection temperature information. The first resistor is a poly-silicon resistor, and the second resistor is a silicon carbon diffusion resistor. The electronic device according to the disclosure includes a power transistor and the temperature detection device. The power transistor is coupled to the temperature detection device. A first end of the power transistor receives an operation power, and a control end of the power transistor is coupled to the detection end. Based on the above, the temperature detection device according to the disclosure divides the detection voltage on the detection end through the first resistor, which is a poly-silicon resistor, and the second resistor, which is a silicon carbon diffusion resistor so as to generate the monitoring voltage, and then compares the monitoring voltage with a plurality of different reference voltages through an operation circuit. By determining the voltage range in which the monitoring voltage is in, the temperature detection device can quickly detect the level of temperature on the detection end, and provide it to the electronic device to perform corresponding operations. BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings are included to provide a further understanding of the disclosure, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the disclosure and, together with the description, serve to explain the principles of the disclosure. FIG. 1 is a schematic diagram of an electronic device according to an embodiment of the disclosure. FIG. 2 is a graph illustrating relation curves between a resistance value and a temperature change of a poly-silicon resistor and a silicon carbon diffusion resistor. FIG. 3 is a schematic diagram illustrating an implementation of an operation circuit in a temperature detection device according to an embodiment of the disclosure. FIG. 4 is a schematic diagram illustrating another implementation of an operation circuit in the temperature detection device according to an embodiment of the disclosure. FIGS. 5A and 5B are schematic diagrams illustrating different implementations of a reference voltage generator in a temperature detection device according to an embodiment of the disclosure. FIG. 6 is a schematic diagram of an electronic device according to another embodiment of the disclosure. FIG. 7A is a structural diagram of a first resistor and a second resistor in a temperature detection device according to an embodiment of the disclosure. FIG. 7B is a structural diagram of another embodiment of a second resistor in a temperature detection device according to an embodiment of the disclosure