US-12628361-B2 - Dielectric having high-dielectric constant, method of manufacturing the same, target material for manufacturing the dielectric, electronic device including the dielectric, and electronic apparatus including the electronic device

Abstract

Disclosed are a high-dielectric and method of manufacturing the same, a target material used for manufacturing the high-dielectric, an electronic device including the high-dielectric, and an electronic apparatus including the electronic device. The high-dielectric includes a first material including oxygen and at least two components, and a second material different from the first materials. The first material is a dielectric having a dielectric constant greater than a dielectric constant of silicon oxide, and the second material is an element for reducing a crystallization temperature of the first material. The content of the second material with respect to the first material may be within a range that does not deteriorate leakage current characteristics of the first material. The content of the second material may be in a range of about 0.1 atomic % to about 10 atomic %, about 0.1 atomic % to about 8.5 atomic %, or about 0.1 atomic % to about 2 atomic %.

Inventors

• Hyungjun Kim
• Yong-hee Cho
• Yongsung Kim
• Boeun PARK
• Jeongil BANG
• Jooho Lee

Assignees

• SAMSUNG ELECTRONICS CO., LTD.

Dates

Publication Date

20260512

Application Date

20220615

Priority Date

20211208

Claims (20)

1. 1 . A high-dielectric comprising: a first material having a dielectric constant greater than a dielectric constant of silicon oxide and including oxygen and at least two components; and a second material different from the first material, wherein the second material reduces a crystallization temperature of the first material, and the second material includes indium (In).
2. 2 . The high-dielectric of claim 1 , wherein a content of the second material with respect to the first material is within a range that does not deteriorate a leakage current characteristic of the first material.
3. 3 . The high-dielectric of claim 2 , wherein the content of the second material is in a range of 0.1 atomic % to 10 atomic %.
4. 4 . The high-dielectric of claim 1 , wherein the first material includes at least one of a ternary or quaternary perovskite material.
5. 5 . The high-dielectric of claim 1 , wherein the second material is uniformly distributed in the first material.
6. 6 . The high-dielectric of claim 1 , wherein the first material includes a plurality of sequentially stacked layers, and the second material is included in a second material layer between at least two of the plurality of sequentially stacked layers.
7. 7 . The high-dielectric of claim 6 , wherein the second material layer is completely embedded in the first material.
8. 8 . The high-dielectric of claim 1 , wherein the first material includes at least a first region and a second region, and the second material is included in only the first region of the first material.
9. 9 . The high-dielectric of claim 6 , wherein the second material layer is included in a plurality of second material layers separated from each other in the first material.
10. 10 . An electronic device comprising: a first stack; a second stack; and a high-dielectric layer between the first stack and the second stack, wherein the high-dielectric layer includes the high-dielectric of claim 1 .
11. 11 . The electronic device of claim 10 , wherein the first stack includes a first portion of a configuration constituting a solar cell including the high-dielectric layer.
12. 12 . The electronic device of claim 11 , wherein the second stack includes a second portion constituting the solar cell.
13. 13 . The electronic device of claim 10 , wherein the first stack includes a first electrode layer, the second stack includes a second electrode layer, and the first electrode layer, the second electrode layer, and the high-dielectric layer constitute a capacitor.
14. 14 . A memory device comprising: a transistor; and a data storage element coupled to the transistor, wherein the data storage element includes the electronic device of claim 10 .
15. 15 . An electronic apparatus comprising the memory device of claim 14 .
16. 16 . A sputtering target for forming a high-dielectric layer comprising: a first source material including at least two different components other than oxygen such that a first material including an oxide of the at least two different components has a dielectric constant greater than a dielectric constant of silicon oxide; and a second source material coupled to the first source material, wherein the second source material includes a component that reduces a crystallization temperature of the first material, and wherein the second source material includes indium (In).
17. 17 . The sputtering target of claim 16 , wherein the first source material includes a perovskite-based dielectric component.
18. 18 . The sputtering target of claim 17 , wherein the first source material includes a first to third components different from each other.
19. 19 . The sputtering target of claim 16 , wherein a content of the second source material is within a range such that, after a sputtering operation, a content of the component that reduces the crystallization temperature of the first material, in the first material, is within a range that does not deteriorate a leakage current characteristic of the first material.
20. 20 . The sputtering target of claim 19 , wherein the range of the content of the second source material is such that the range of the content of the component that reduces the crystallization temperature of the first material, in the first material, is in a range of 0.1 atomic % to 10 atomic %.

Description

CROSS-REFERENCE TO RELATED APPLICATION This application is based on and claims priority under 35 U.S.C. § 119 to Korean Patent Application No. 10-2021-0175201, filed on Dec. 8, 2021, in the Korean Intellectual Property Office, the disclosure of which is incorporated by reference herein in its entirety. BACKGROUND 1. Field The disclosure relates to high-dielectrics and applications thereof, and more particularly, to high-dielectrics and methods of manufacturing the same, target materials for manufacturing the high-dielectrics, electronic devices including the high-dielectrics, and electronic apparatuses including the electronic devices. 2. Description of Related Art As the degree of integration of semiconductor devices increases, the demand for dielectric materials capable of increasing capacitance in the same and/or smaller areas has also increased. As a dielectric, SiO2 having a dielectric constant of 3.9 was initially used, and afterwards, Al2O3 or ZrO2, etc., have been used as high-dielectric constant materials having a higher dielectric constant. However, as the degree of integration of semiconductor devices has further continuously increased, a dielectric having a higher permittivity than that of a conventional binary oxide-based dielectric is required. Perovskite type materials have been considered as dielectric materials that may meet these requirements, but there are limitations in the manufacturing process thereof. In addition, it has been reported that the dielectric properties of perovskite dielectrics vary greatly depending on crystallinity. SUMMARY Provided are high-dielectrics with reduced crystallization temperatures and/or crystallization initiation temperatures. Provided are sputtering targets for manufacturing the high-dielectrics. Provided are methods of manufacturing the high-dielectrics. Provided are electronic devices including the high-dielectrics. Provided are electronic apparatuses including the electronic devices. Additional aspects will be set forth in part in the description which follows and, in part, will be apparent from the description, or may be learned by practice of the presented embodiments of the disclosure. According to some example embodiments, a high-dielectric includes a first material having a dielectric constant greater than a dielectric constant of silicon oxide and including oxygen and at least two components; and a second material different from the first material, wherein the second material reduces a crystallization temperature of the first material. In some examples, a content of the second material with respect to the first material may be within a range that does not deteriorate a leakage current characteristic of the first material. In some examples, the content of the second material may be in a range of about 0.1 atomic % to about 10 atomic %, about 0.1 atomic % to about 8.5 atomic %, or about 0.1 atomic % to about 2 atomic %. In some examples, the first material may include at least one of a ternary or quaternary perovskite material. In some examples, the second material may include indium (In). In some examples, the second material may be uniformly distributed in the first material. In some examples, the first material may include a plurality of sequentially stacked layers, and the second material may be included in a second material layer between at least two of the plurality of the sequentially stacked layers. The second material layer may be completely embedded in the first material. In some examples, the first material may include at least a first and a second region, and the second material may be included in only the first region of the first material. In some examples, the second material layer may form a plurality of layers separated from each other in the first material. According to some example embodiments, a sputtering target for forming a high-dielectric layer, includes a first source material including at least two different components other than oxygen such that a first material including an oxide of the at least two different components has, and a second source material coupled to the first material. The second source material may include a component that reduces a crystallization temperature of the first material. In some examples, the first material may include a perovskite-based dielectric component. The first material may include a first to third components different from each other. In some examples, the second source material may include indium (In). In some examples, the second source material of the target may have a content so that a content of a second material of a high-dielectric layer formed of the first and second materials which is formed by sputtering the target is within a range that does not deteriorate a leakage current characteristic of the first material. The range may be about 0.1 atomic % to about 10 atomic %, about 0.1 atomic % to about 8.5 atomic %, or about 0.1 atomic % to about 2 atomic %. According to some ex