US-12628371-B2 - Semiconductor device and method of manufacturing the semiconductor device

Abstract

A semiconductor device includes an active fin protruding from a substrate, extending in a first direction, and defined by a device isolation layer. Gate structures intersect the active fin and extend in a second direction. Each of the gate structures includes a gate and gate spacers on side surfaces of the gate. Epitaxial layers are disposed on the active fin, on opposite sides of the gate structure, and include a first epitaxial layer providing a drain region and a second epitaxial layer providing a source region. The gate spacers include a first spacer disposed between the first epitaxial layer and the gate. The first spacer includes a first region extending in a third direction, along a side surface of the gate, and a second region extending from a lower portion of the first region in a direction away from the gate.

Inventors

• CHOONGSUN KIM
• Shigenobu Maeda
• MYOUNGKYU PARK

Assignees

• SAMSUNG ELECTRONICS CO., LTD.

Dates

Publication Date

20260512

Application Date

20220815

Priority Date

20211105

Claims (18)

1. 1 . A semiconductor device, comprising: an active fin protruding from a substrate and extending in a first direction; a device isolation layer defining the active fin in the substrate and covering a portion of a side surface of the active fin; a plurality of gate structures intersecting the active fin and extending in a second direction, perpendicular to the first direction, each of the plurality of gate structures including a gate and gate spacers on side surfaces of the gate; and a plurality of epitaxial layers disposed on the active fin, on opposite sides of each of the plurality of gate structures, and including a first epitaxial layer providing a drain region and a second epitaxial layer providing a source region, wherein the gate spacers include a first spacer positioned between the first epitaxial layer and a first gate of a first gate structure and a second spacer located on an opposite side of the first spacer, with the first gate of the first gate structure disposed between the first and second spacers, wherein the first spacer includes a first region extending in a third direction, perpendicular to an upper surface of the substrate, along a first side surface of the first gate of the first gate structure, and a second region extending from a lower portion of the first region in a direction away from the first gate of the first gate structure, wherein the second spacer extends in the third direction along a second side surface of the first gate of the first gate structure, wherein the plurality of epitaxial layers further includes one or more third epitaxial layers disposed between the first epitaxial layer and the second epitaxial layer, and wherein a length of at least one of the first epitaxial layer or the second epitaxial layer in the first direction is different from a length of the one or more of third epitaxial layers in the first direction.
2. 2 . The semiconductor device of claim 1 , wherein the first epitaxial layer is spaced apart from the first gate of the first gate structure by an offset distance by the first spacer.
3. 3 . The semiconductor device of claim 2 , wherein a length of the second region of the first spacer offsetting the first epitaxial layer from the first gate of the first gate structure, in the first direction, is in a range of about 1 nm to about 50 nm.
4. 4 . The semiconductor device of claim 1 , wherein an impurity element doped on the first epitaxial layer and an impurity element doped on the second epitaxial layer have a same conductivity type.
5. 5 . The semiconductor device of claim 1 , wherein one of the plurality of epitaxial layers disposed between the plurality of gate structures has a first length in the first direction, and wherein the first epitaxial layer has a second length that is less than the first length in the first direction.
6. 6 . The semiconductor device of claim 1 , wherein the gate includes a gate dielectric layer on the active fin and a gate electrode on the gate dielectric layer, and wherein a thickness of the gate dielectric layer ranges from about 1.5 nm to about 10 nm.
7. 7 . The semiconductor device of claim 1 , wherein a driving voltage in a range of about 1.2 V to about 50 V is applied to the first epitaxial layer.
8. 8 . The semiconductor device of claim 1 , wherein the gate spacers further include a third spacer disposed between the second epitaxial layer and a second gate of a second gate structure, and wherein the third spacer includes a third region extending in the third direction along a third side surface of the second gate of the second gate structure, and a fourth region extending from a lower portion of the third region in a direction away from the second gate of the second gate structure.
9. 9 . The semiconductor device of claim 8 , wherein in the first direction, a length of the fourth region and a length of the second region are different from each other.
10. 10 . The semiconductor device of claim 1 , further comprising a plurality of channel layers disposed on the active fin and spaced apart from each other in the third direction, at least partially surrounded by the gate, and connected to the plurality of epitaxial layers.
11. 11 . The semiconductor device of claim 1 , further comprising: a first contact connected to the first epitaxial layer and configured to apply a first voltage to the first epitaxial layer; and a second contact connected to the second epitaxial layer and configured to apply a second voltage that is lower than the first voltage to the second epitaxial layer.
12. 12 . A semiconductor device, comprising: an active fin protruding from a substrate and extending in a first direction; a device isolation layer defining the active fin in the substrate and covering a portion of a side surface of the active fin; a plurality of gate structures intersecting the active fin and extending in a second direction, perpendicular to the first direction; a first epitaxial layer disposed on a first recess region of the active fin that is outside of a first gate structure, among the plurality of gate structures; a second epitaxial layer disposed on a second recess region of the active fin that is outside of a second gate structure, among the plurality of gate structures; and one or more third epitaxial layers disposed on one or more third recess regions on the active fin, between the first gate structure and the second gate structure, wherein each of the plurality of gate structures includes a gate and gate spacers disposed on side surfaces of the gate, wherein, among the gate spacers, a first gate spacer in contact with the first epitaxial layer includes a first region extending in a third direction, perpendicular to an upper surface of the substrate, and a second region bent from a lower portion of the first region and extending toward the first epitaxial layer, and wherein a length of the first epitaxial layer in the first direction is shorter than a length of the one or more third epitaxial layers in the first direction.
13. 13 . The semiconductor device of claim 12 , wherein a length of the second epitaxial layer in the second direction is shorter than the length of the one or more third epitaxial layers in the first direction.
14. 14 . The semiconductor device of claim 12 , wherein the length of the first epitaxial layer in the second direction is different from a length of the second epitaxial layer in the second direction.
15. 15 . The semiconductor device of claim 12 , wherein the first epitaxial layer and the second epitaxial layer form a mirror-symmetric structure with respect to a center of the one or more third epitaxial layers.
16. 16 . The semiconductor device of claim 12 , wherein the first epitaxial layer and the second epitaxial layer form an asymmetrical structure with respect to a center of the one or more third epitaxial layers.
17. 17 . A semiconductor device, comprising: an active fin protruding from a substrate and extending in a first direction; a device isolation layer defining the active fin in the substrate and covering a portion of a side surface of the active fin; a first gate structure intersecting the active fin and extending in a second direction, perpendicular to the first direction; a second gate structure intersecting the active fin and extending in the second direction, the second gate structure spaced apart from the first gate structure in the first direction; a first dummy gate structure extending in the second direction and disposed adjacent to the first gate structure; a second dummy gate structure extending in the second direction and adjacent to the second gate structure; a first epitaxial layer disposed on a first recess region of the active fin, between the first gate structure and the first dummy gate structure; a second epitaxial layer disposed on a second recess region of the active fin, between the second gate structure and the second dummy gate structure; and one or more third epitaxial layers disposed between the first epitaxial layer and the second epitaxial layer, wherein the first gate structure includes a first gate, and a first gate spacer disposed on one side surface adjacent to the first dummy gate structure, among side surfaces of the first gate, wherein the first gate spacer includes a first region extending in a third direction, perpendicular to an upper surface of the substrate, and a second region extending from a lower portion of the first region toward the first dummy gate structure, wherein the first epitaxial layer is disposed between the first dummy gate structure and the second region, and wherein a length of at least one of the first epitaxial layer or the second epitaxial layer in the first direction is different from a length of the one or more of third epitaxial layers in the first direction.
18. 18 . The semiconductor device of claim 17 , wherein a distance between the first dummy gate structure and the second gate structure is greater than a distance between the first dummy gate structure and the first gate structure, in the first direction, wherein the second gate structure includes a second gate, and a second gate spacer disposed on one side surface adjacent to the second dummy gate structure from among side surfaces of the second gate, wherein the second gate spacer includes a third region extending in the third direction and a fourth region extending from a lower portion of the third region toward the second dummy gate structure, and wherein the second epitaxial layer is disposed between the second dummy gate structure and the fourth region.

Description

CROSS-REFERENCE TO RELATED APPLICATION(S) This application claims priority under 35 USC 119(a) to Korean Patent Application No. 10-2021-0151325 filed on Nov. 5, 2021 in the Korean Intellectual Property Office, the disclosure of which is incorporated by reference herein in its entirety. TECHNICAL FIELD The present inventive concept relates to a semiconductor device and a method of manufacturing the semiconductor device. DISCUSSION OF THE RELATED ART Field effect transistors (FET) have been developed to be more highly integrated. For example, a FinFET having a three-dimensional structure has been developed. The FinFET device has a structure capable of reducing the short channel effect that may be experienced in other FETs. The FinFET device includes an active region having a fin shape. Since the channel region is formed in the fin-shaped active region, the FinFET device may have a suitable channel having its width bound within a relatively small horizontal region, as compared to the related art planar transistor. Therefore, the FinFET device may be scalable and capable of achieving a high performance, as compared to the related art planar transistor of a similar size, and thus, FinFET devices have been applied to various low-power/high-performance applications. SUMMARY A semiconductor device includes an active fin protruding from a substrate and extending in a first direction. A device isolation layer defines the active fin in the substrate and covers a portion of a side surface of the active fin. A plurality of gate structures intersect the active fin and extend in a second direction, perpendicular to the first direction. Each of the plurality of gate structures includes a gate and gate spacers on side surfaces of the gate. A plurality of epitaxial layers is disposed on the active fin, on opposite sides of the gate structure and includes a first epitaxial layer providing a drain region and a second epitaxial layer providing a source region. The gate spacers include a first spacer disposed between the first epitaxial layer and the gate. The first spacer includes a first region extending in a third direction, perpendicular to an upper surface of the substrate, along a side surface of the gate, and a second region extending from a lower portion of the first region in a direction away from the gate. A semiconductor device includes an active fin protruding from a substrate and extending in a first direction. A device isolation layer defines the active fin in the substrate and covers a portion of a side surface of the active fin. A plurality of gate structures intersect the active fin and extend in a second direction, perpendicular to the first direction. A first epitaxial layer is disposed on a first recess region of the active fin, outside of a first gate structure, among the plurality of gate structures. A second epitaxial layer is disposed on a second recess region of the active fin, outside of a second gate structure, among the plurality of gate structures. One or more third epitaxial layers are disposed on one or more third recess regions on the active fin, between the first gate structure and the second gate structure. Each of the plurality of gate structures includes a gate and gate spacers on side surfaces of the gate. Among the gate spacers, a first gate spacer in contact with the first epitaxial layer includes a first region extending in a third direction, perpendicular to an upper surface of the substrate, and a second region bent from a lower portion of the first region and extending toward the first epitaxial layer. A length of the first epitaxial layer in the first direction is shorter than a length of the one or the plurality of third epitaxial layers in the first direction. A semiconductor device includes an active fin protruding from a substrate and extending in a first direction. A device isolation layer defines the active fin in the substrate and covers a portion of a side surface of the active fin. A first gate structure intersects the active fin and extends in a second direction, perpendicular to the first direction. A first dummy gate structure extends in the second direction and is adjacent to the first gate structure. A first epitaxial layer is disposed on a first recess region of the active fin, between the first gate structure and the first dummy gate structure. The first gate structure includes a first gate, and a first gate spacer disposed on one side surface adjacent to the first dummy gate structure, among side surfaces of the first gate. The first gate spacer includes a first region extending in a third direction, perpendicular to an upper surface of the substrate, and a second region extending from a lower portion of the first region toward the first dummy gate structure. The first epitaxial layer is disposed between the dummy gate structure and the second region. A method of manufacturing a semiconductor device includes forming an active fin on a substrate. A sacrificial gate stru