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US-12628423-B2 - Display panel and method for fabricating same

US12628423B2US 12628423 B2US12628423 B2US 12628423B2US-12628423-B2

Abstract

A display panel and a method for fabricating the same are provided. The display panel includes a transistor layer. The transistor layer includes an oxide active layer and a first photocatalytic layer that are stacked. The first photocatalytic layer is made of a first material and a second material. A conduction band energy level of the first material is staggered from a conduction band energy level of the second material, or a valence band energy level of the first material is staggered from a valence band energy level of the second material. At least one of the conduction band energy level of the first material and the conduction band energy level of the second material is less than 0 eV.

Inventors

  • Qi Liu

Assignees

  • Guangzhou China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

Dates

Publication Date
20260512
Application Date
20220302
Priority Date
20220222

Claims (20)

  1. 1 . A display panel, comprising: a substrate; and a transistor layer disposed on the substrate and comprising an oxide active layer and a first photocatalytic layer that are stacked, wherein the first photocatalytic layer and the oxide active layer are sequentially stacked on the substrate, the first photocatalytic layer is made of at least one of a first material and a second material; wherein a conduction band energy level of the first material is staggered from a conduction band energy level of the second material, or a valence band energy level of the first material is staggered from a valence band energy level of the second material; wherein at least one of the conduction band energy level of the first material and the conduction band energy level of the second material is less than 0 eV; and wherein the transistor layer further comprises: a gate electrode disposed on the substrate; an insulating layer disposed on the substrate and the gate electrode, wherein the oxide active layer is disposed on the insulating layer and is disposed corresponding to the gate electrode; a source electrode and a drain electrode disposed in a same layer and disposed on the oxide active layer at intervals; a first passivation layer disposed on the insulating layer, the oxide active layer, the source electrode, and the drain electrode; and a second passivation layer, wherein the first photocatalytic layer and the second passivation layer are sequentially stacked on the first passivation layer.
  2. 2 . The display panel according to claim 1 , wherein at least one of a band gap of the first material and a band gap of the second material is greater than 1.23 eV.
  3. 3 . The display panel according to claim 2 , wherein at least one of the band gap of the first material and the band gap of the second material is greater than 1.8 eV.
  4. 4 . The display panel according to claim 3 , wherein the first material comprises TiO 2 , α-Ga 2 O 3 , β-Ga 2 O 3 , GaN, ZnO, Ti 3 C 2 , CdS, BiVO 4 , NiO, SrTiO 3 , SnO 2 , NiGa 2 O 4 , WO 3 , C 3 N 4 , Mn-Fe 2 O 3 , Ta 2 O 5 , Pt, Ta 3 Ns, g-C 3 N 4 , BiFeO 3 , CoOx-MO 2 N, Ge 3 N 4 , ZnInS 4 , Cs 2 O, Bi 2 O 3 , InSe, or Zr 2 CO 2 , and the second material comprises TiO 2 , α-Ga 2 O 3 , β-Ga 2 O 3 , GaN, ZnO, Ti 3 C 2 , CdS, BiVO 4 , NiO, SrTiO 3 , SnO 2 , NiGa 2 O 4 , WO 3 , C 3 N 4 , Mn-Fe 2 O 3 , Ta 2 O 5 , Pt, Ta 3 N 5 , g-C 3 N 4 , BiFeO 3 , CoOx-MO 2 N, Ge 3 N 4 , ZnInS 4 , Cs 2 O, Bi 2 O 3 , InSe, or Zr 2 CO l .
  5. 5 . The display panel according to claim 1 , wherein the insulating layer comprises a first sublayer and a second sublayer that are sequentially stacked on the substrate and the gate electrode, and the oxide active layer is disposed on the second sublayer.
  6. 6 . The display panel according to claim 5 , wherein the first sublayer is made of silicon nitride, and the second sublayer is made of one or more of aluminum oxide and silicon oxide.
  7. 7 . The display panel according to claim 1 , further comprising a second photocatalytic layer disposed between the oxide active layer and the insulating layer.
  8. 8 . The display panel according to claim 1 , wherein the transistor layer further comprises: a source electrode and a drain electrode disposed in a same layer and disposed on the substrate at intervals, wherein the oxide active layer is disposed on the substrate, the source electrode, and the drain electrode, and the first photocatalytic layer is disposed on the oxide active layer and the substrate; an insulating layer disposed on the first photocatalytic layer; and a gate electrode disposed on the insulating layer and disposed corresponding to the oxide active layer.
  9. 9 . The display panel according to claim 8 , wherein the transistor layer further comprises: a buffer layer disposed on the substrate, wherein the source electrode and the drain electrode are disposed in the same layer and disposed on the buffer layer at intervals.
  10. 10 . The display panel according to claim 1 , wherein the first photocatalytic layer is made of a mixture of the first material and the second material.
  11. 11 . The display panel according to claim 1 , wherein the first photocatalytic layer comprises a first photocatalytic sublayer and a second photocatalytic sublayer that are sequentially stacked on a side of the oxide active layer away from the substrate, the first photocatalytic sublayer is made of the first material, and the second photocatalytic layer is made of the second material.
  12. 12 . The display panel according to claim 1 , wherein the first material and the second material are in contact with each other to form a heterojunction layer.
  13. 13 . The display panel according to claim 1 , wherein the first material and the second material are materials with a same chemical formula.
  14. 14 . The display panel according to claim 1 , wherein at least one of the first material and the second material is a semiconductor material.
  15. 15 . A method for fabricating a display panel, comprising: providing a substrate; and forming a first photocatalytic layer on the substrate and forming an oxide active layer on the first photocatalytic layer, or forming the oxide active layer on the substrate and forming the first photocatalytic layer on the oxide active layer; wherein the first photocatalytic layer is made of at least a first material and a second material; wherein a conduction band energy level of the first material is staggered from a conduction band energy level of the second material, or a valence band energy level of the first material is staggered from a valence band energy level of the second material; wherein at least one of the conduction band energy level of the first material and the conduction band energy level of the second material is less than 0 eV; and wherein the forming of the first photocatalytic layer on the substrate and the forming of the oxide active layer on the first photocatalytic layer comprises: mixing and disposing the first material and the second material on the substrate to form the first photocatalytic layer; and forming the oxide active layer on the first photocatalytic layer.
  16. 16 . The method for fabricating the display panel according to claim 15 , wherein at least one of a band gap of the first material and a band gap of the second material is greater than 1.23 eV.
  17. 17 . The method for fabricating the display panel according to claim 16 , wherein at least one of the band gap of the first material and the band gap of the second material is greater than 1.8 eV.
  18. 18 . The method for fabricating the display panel according to claim 17 , wherein the first material comprises TiO 2 , α-Ga 2 O 3 , β-Ga 2 O 3 , GaN, ZnO, Ti 3 C 2 , CdS, BiVO 4 , NiO, SrTiO 3 , SnO 2 , NiGa 2 O 4 , WO 3 , C 3 N 4 , Mn-Fe 2 O 3 , Ta 2 O 5 , Pt, Ta 3 N 5 , g-C 3 N 4 , BiFeO 3 , CoOx-MO 2 N, Ge 3 N 4 , ZnInS 4 , Cs 2 O, Bi 2 O 3 , InSe, or Zr 2 CO 2 , and the second material comprises TiO 2 , α-Ga 2 O 3 , β-Ga 2 O 3 , GaN, ZnO, Ti 3 C 2 , CdS, BiVO 4 , NiO, SrTiO 3 , SnO 2 , NiGa 2 O 4 , WO 3 , C 3 N 4 , Mn-Fe 2 O 3 , Ta 2 O 5 , Pt, Ta 3 Ns, g-C 3 N 4 , BiFeO 3 , CoOx-MO 2 N, Ge 3 N 4 , ZnInS 4 , Cs 2 O, Bi 2 O 3 , InSe, or Zr 2 CO l .
  19. 19 . The method for fabricating the display panel according to claim 15 , wherein the forming the first photocatalytic layer on the substrate and forming the oxide active layer on the first photocatalytic layer comprises: forming a first photocatalytic sublayer of the first photocatalytic layer with the first material on the substrate; forming a second photocatalytic sublayer of the first photocatalytic layer with the second material on the first photocatalytic sublayer; and forming the oxide active layer on the second photocatalytic sublayer.
  20. 20 . The method for fabricating the display panel according to claim 15 , before the forming the first photocatalytic layer on the substrate and forming the oxide active layer on the first photocatalytic layer, further comprising: forming a gate electrode on the substrate; and forming an insulating layer on the gate electrode.

Description

RELATED APPLICATIONS This application is a National Phase of PCT Patent Application No. PCT/CN2022/078767 having International filing date of Mar. 2, 2022, which claims the benefit of priority of Chinese Patent Application No. 202210159797.4 filed on Feb. 22, 2022. The contents of the above applications are all incorporated by reference as if fully set forth herein in their entirety. FIELD AND BACKGROUND OF THE INVENTION The present disclosure relates to the technical field of display, and particularly to a display panel and a method for fabricating the same. Currently, oxide transistors are widely used in display panels to replace conventional amorphous silicon (a-Si) transistors due to their high mobility, good uniformity, large-area fabrication, good bending resistance, and easy integration. However, film layers of a display panel will generate free hydrogen ions during a preparation process or a use process. An active layer of each oxide transistor is sensitive to hydrogen ions. A current film layer for blocking hydrogen ions has a poor effect of blocking hydrogen ions, causing hydrogen ions to enter an oxide active layer. As a result, a threshold voltage (Vth) is easily negatively shifted, which reduces electrical stability and makes a display panel comprising oxide transistors poor in quality and reliability. SUMMARY OF THE INVENTION The present disclosure provides a display panel and a method for fabricating the same, so as to solve the technical problem that a film layer has a poor performance of blocking hydrogen ions in the prior art. The present disclosure provides a display panel comprising a substrate and a transistor layer. The transistor layer is disposed on the substrate. The transistor layer comprises an oxide active layer and a first photocatalytic layer that are stacked. The first photocatalytic layer is made of at least a first material and a second material. A conduction band energy level of the first material is staggered from a conduction band energy level of the second material, or a valence band energy level of the first material is staggered from a valence band energy level of the second material. At least one of the conduction band energy level of the first material and the conduction band energy level of the second material is less than 0 eV. In an embodiment, at least one of a band gap of the first material and a band gap of the second material is greater than 1.23 eV. In an embodiment, at least one of the band gap of the first material and the band gap of the second material is greater than 1.8 eV. In an embodiment, the first material comprises TiO2, α-Ga2O3, β-Ga2O3, GaN, ZnO, Ti3C2, CdS, BiVO4, NiO, SrTiO3, SnO2, NiGa2O4, WO3, C3N4, Mn—Fe2O3, Ta2O5, Pt, Ta3N5, g-C3N4, BiFeO3, CoOx—Mo2N, Ge3N4, ZnInS4, Cs2O, Bi2O3, InSe, or Zr2CO2, and the second material comprises TiO2, α-Ga2O3, β-Ga2O3, GaN, ZnO, Ti3C2, CdS, BiVO4, NiO, SrTiO3, SnO2, NiGa2O4, WO3, C3N4, Mn—Fe2O3, Ta2O5, Pt, Ta3N5, g-C3N4, BiFeO3, CoOx—Mo2N, Ge3N4, ZnInS4, Cs2O, Bi2O3, InSe, or Zr2CO2. In an embodiment, the first photocatalytic layer and the oxide active layer are sequentially stacked on the substrate. In an embodiment, the transistor layer further comprises a gate electrode, an insulating layer, a source electrode, a drain electrode, a first passivation layer, and a second passivation layer. The gate electrode is disposed on the substrate. The insulating layer is disposed on the substrate and the gate electrode. The oxide active layer is disposed on the insulating layer and is disposed corresponding to the gate electrode. The source electrode and the drain electrode are disposed in a same layer and are disposed on the oxide active layer at intervals. The first passivation layer is disposed on the insulating layer, the oxide active layer, the source electrode, and the drain electrode. The first photocatalytic layer and the second passivation layer are sequentially stacked on the first passivation layer. In an embodiment, the insulating layer comprises a first sublayer and a second sublayer that are sequentially stacked on the substrate and the gate electrode. The oxide active layer is disposed on the second sublayer. In an embodiment, the first sublayer is made of silicon nitride, and the second sublayer is made of one or more of aluminum oxide and silicon oxide. In an embodiment, the display panel further comprises a second photocatalytic layer disposed between the oxide active layer and the insulating layer. In an embodiment, the transistor layer further comprises a source electrode, a drain electrode, an insulating layer, and a gate electrode. The source electrode and the drain electrode are disposed in a same layer and are disposed on the substrate at intervals. The oxide active layer is disposed on the substrate, the source electrode, and the drain electrode. The first photocatalytic layer is disposed on the oxide active layer and the substrate. The insulating layer is disposed on the first photocatalyti