US-12628443-B2 - Method of manufacturing terahertz detection device, and detection apparatus

US12628443B2US 12628443 B2US12628443 B2US 12628443B2US-12628443-B2

Abstract

Provided are a method of manufacturing a terahertz detection device including detectors and lenses arranged in an array and a terahertz detection apparatus. An example method includes forming detectors in a first area of a first surface of a base substrate through a double-sided photoetching process to form a detector array, and providing at least one first alignment mark in a second area of the first surface of the base substrate. A plurality of lens mounting parts are formed in a third area of a second surface of the base substrate through the double-sided photoetching process, and at least one second alignment mark is provided in a fourth area of the second surface of the base substrate. The lenses are mounted to the lens mounting parts to form the detection device. The first alignment mark is aligned with the second alignment mark by using a double-sided photoetching machine.

Inventors

Ziran Zhao
Shoulu JIANG
Xuming MA

Assignees

NUCTECH COMPANY LIMITED
SHENMUTEK COMPANY LIMITED
TSINGHUA UNIVERSITY

Dates

Publication Date: 20260512
Application Date: 20221110
Priority Date: 20211112

Claims (12)

1 . A method of manufacturing a terahertz detection device, the terahertz detection device comprising detectors and lenses arranged in an array, wherein the method comprises: forming a plurality of detectors in a first area of a first surface of a base substrate through a double-sided photoetching process so as to form a detector array, and providing at least one first alignment mark in a second area of the first surface of the base substrate; forming a plurality of lens mounting parts in a third area of a second surface of the base substrate through the double-sided photoetching process, and providing at least one second alignment mark in a fourth area of the second surface of the base substrate; and mounting the lenses to the lens mounting parts to form the terahertz detection device, wherein after the first alignment mark is provided and before the second alignment mark is provided, a position of the second alignment mark is determined by using a double-sided photoetching machine to align the first alignment mark with the second alignment mark, so that an offset of a center of the detector with respect to a center of the lens mounting part is within a preset range of 0 to 10 μm; wherein the forming a plurality of lens mounting parts in a third area of a second surface of the base substrate through the double-sided photoetching process comprises: coating a photoresist on the second surface of the base substrate, wherein a coating thickness of the photoresist is in a range of 3 to 5 μm; drying, exposing, and developing the photoresist; and etching the base substrate to form the lens mounting parts; and wherein an etching depth of the lens mounting part is greater than or equal to 30 μm.
2 . The method according to claim 1 , wherein a projection of the detector on the base substrate is located within a projection of the lens mounting part on the base substrate.
3 . The method according to claim 1 , wherein the detector comprises a sensitive unit and a detection antenna, and the center of the detector coincides with a center of the sensitive unit.
4 . The method according to claim 1 , wherein the coating a photoresist on the second surface of the base substrate comprises: precoating the photoresist on the base substrate, wherein a rotating speed of the precoating is 500 to 700 rpm, and a duration of the precoating is 5 to 7 seconds; and after the precoating is completed, performing a second coating, wherein a rotating speed of the second coating is 5000 to 6000 rpm, and a duration of the second coating is 15 to 25 seconds.
5 . The method according to claim 1 , wherein the drying comprises a first drying and a second drying; a duration of the first drying is 1.8 to 2.2 minutes, and a temperature of the first drying is within a range of 95 to 105° C.; and a duration of the second drying is 0.8 to 1.2 minutes, and a temperature of the second drying is within a range of 85 to 95° C.
6 . The method according to claim 1 , wherein a duration of the exposing is 6 to 8 seconds, and a duration of the developing is 30 to 40 seconds.
7 . The method according to claim 1 , wherein a projection of the lens on the base substrate is circular; an inner diameter of the lens mounting part is larger than an outer diameter of the lens; and a difference between the inner diameter of the lens mounting part and the outer diameter of the lens is less than or equal to 5 μm.
8 . The method according to claim 7 , wherein an inner diameter of the lens mounting part on a side of the lens mounting part close to the base substrate is smaller than an inner diameter of the lens mounting part on a side of the lens mounting part away from the base substrate.
9 . The method according to claim 1 , wherein the base substrate is etched by an inductively coupled plasma etching machine.
10 . The method according to claim 1 , wherein types of the lenses comprise at least one of a sub-hemispherical lens, a hemispherical lens, and a hyper-hemispherical lens.
11 . The method according to claim 1 , wherein after mounting the lenses to the lens mounting parts to form the terahertz detection device, and the method further comprises: coating an adhesive on a joint of the lens and the base substrate to fix the lens on the base substrate; or mounting a fixing piece on the base substrate to fix the lens on the base substrate.
12 . A terahertz detection apparatus, comprising detectors and lenses arranged in an array, wherein the terahertz detection apparatus is manufactured by: forming a plurality of detectors in a first area of a first surface of a base substrate through a double-sided photoetching process so as to form a detector array, and providing at least one first alignment mark in a second area of the first surface of the base substrate; forming a plurality of lens mounting parts in a third area of a second surface of the base substrate through the double-sided photoetching process, and providing at least one second alignment mark in a fourth area of the second surface of the base substrate; and mounting the lenses to the lens mounting parts, wherein after the first alignment mark is provided and before the second alignment mark is provided, a position of the second alignment mark is determined by using a double-sided photoetching machine to align the first alignment mark with the second alignment mark, so that an offset of a center of the detector with respect to a center of the lens mounting part is within a preset range of 0 to 10 μm; wherein the forming a plurality of lens mounting parts in a third area of a second surface of the base substrate through the double-sided photoetching process comprises: coating a photoresist on the second surface of the base substrate, wherein a coating thickness of the photoresist is in a range of 3 to 5 μm; drying, exposing, and developing the photoresist; and etching the base substrate to form the lens mounting parts; and wherein an etching depth of the lens mounting part is greater than or equal to 30 μm.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS This application claims priority to Chinese Patent Application No. 202111335830.6, filed on Nov. 12, 2021, the disclosure of which is incorporated herein by reference in its entirety. TECHNICAL FIELD The present disclosure relates to a field of terahertz detection technology, and in particular to a method of manufacturing a terahertz detection device and a terahertz detection apparatus. BACKGROUND A terahertz wave is an electromagnetic wave with an oscillation frequency of 0.1 THz to 10 THz, having characteristics of good penetrability, low single photon energy, rich spectral information and the like, and having important application values in fields of security inspection imaging, spectral detection, information communication and the like. In the related art, a detector of a detection device needs to be provided with a lens so as to converge signals. A substrate of the detector is generally clamped by a mechanical member, and a region to which the lens is mounted is processed by the mechanical member. Since a mechanical processing accuracy is greatly influenced by an ambient temperature, when a mechanical clamping part is used for processing the region for mounting the lens, the mechanical part is influenced by effects of thermal expansion and cold contraction, so that an error is further increased, and thus an alignment accuracy of the lens of a manufactured terahertz detection apparatus is poor. SUMMARY In view of the above-mentioned problems, the present disclosure provides a method of manufacturing a terahertz detection device and a terahertz detection apparatus, which may effectively solve the above-mentioned problems and defects existing in the related art. According to a first aspect of the present disclosure, a method of manufacturing a terahertz detection device is provided, the terahertz detection device including detectors and lenses arranged in an array, wherein the method includes: forming a plurality of detectors in a first area of a first surface of a base substrate through a double-sided photoetching process so as to form a detector array, and providing at least one first alignment mark in a second area of the first surface of the base substrate; forming a plurality of lens mounting parts in a third area of a second surface of the base substrate through the double-sided photoetching process, and providing at least one second alignment mark in a fourth area of the second surface of the base substrate; and mounting the lenses to the lens mounting parts to form the terahertz detection device, wherein after the first alignment mark is provided and before the second alignment mark is provided, a providing position of the second alignment mark is determined by using a double-sided photoetching machine to complete an alignment of the first alignment mark with the second alignment mark, so that an offset of a center of the detector with respect to a center of the lens mounting part is within a preset range. In some embodiments of the present disclosure, a projection of the detector on the base substrate is located within a projection of the lens mounting part on the base substrate. In some embodiments of the present disclosure, the detector includes a sensitive unit and a detection antenna, and the center of the detector coincides with a center of the sensitive unit. In some embodiments of the present disclosure, the forming a plurality of lens mounting parts in a third area of a second surface of the base substrate through the double-sided photoetching process includes: coating a photoresist on the second surface of the base substrate, wherein a coating thickness of the photoresist is in a range of 3 to 5 μm; drying, exposing and developing the photoresist; and etching the base substrate to form the lens mounting parts. In some embodiments of the present disclosure, the coating a photoresist on the second surface of the base substrate includes: precoating the photoresist on the base substrate, wherein a rotating speed of the precoating is 500 to 700 rpm, and a duration of the precoating is 5 to 7 seconds; and after the precoating is completed, performing a second coating, wherein a rotating speed of the second coating is 5000 to 6000 rpm, and a duration of the second coating is 15 to 25 seconds. In some embodiments of the present disclosure, the drying includes a first drying and a second drying; a duration of the first drying is 1.8 to 2.2 minutes, and a temperature of the first drying is within a range of 95 to 105° C.; and a duration of the second drying is 0.8 to 1.2 minutes, and a temperature of the second drying is within a range of 85 to 95° C. In some embodiments of the present disclosure, a duration of the exposing is 6 to 8 seconds, and a duration of the developing is 30 to 40 seconds. In some embodiments of the present disclosure, a projection of the lens on the base substrate is circular; an inner diameter of the lens mounting part is larger than