US-12628460-B2 - Photoelectric conversion element and method for manufacturing photoelectric conversion element

US12628460B2US 12628460 B2US12628460 B2US 12628460B2US-12628460-B2

Abstract

Provided is a photoelectric conversion element capable of suppressing a decrease in strength. A photoelectric conversion element comprises: a photoelectric conversion layer ( 26 ); an electrode layer ( 24 ) adjacent to the photoelectric conversion layer; a collecting electrode ( 30 ) adjacent to the electrode layer; and a conductor ( 50 ) joined to the collecting electrode. The thickness of the collecting electrode ( 30 ) at least at a joint portion between the collecting electrode ( 30 ) and the conductor ( 50 ) is 4 μm or more.

Inventors

Mikio HAMANO
Kyohei HORIGUCHI
Takato ISHIUCHI

Assignees

IDEMITSU KOSAN CO., LTD.

Dates

Publication Date: 20260512
Application Date: 20220620
Priority Date: 20210628

Claims (14)

1 . A photoelectric conversion element comprising, in this order: a photoelectric conversion layer; an electrode layer adjacent to the photoelectric conversion layer; a collecting electrode adjacent to the electrode layer; and a conductor joined to the collecting electrode, wherein a thickness of the collecting electrode at least at a joint portion between the collecting electrode and the conductor is 4 μm or more, the collecting electrode includes a plurality of line-like first portions and a second portion extending in one direction, the second portion is directly connected to the plurality of line-like first portions, and the conductor is joined to the second portion and extends in a direction intersecting said one direction.
2 . The photoelectric conversion element according to claim 1 , wherein the thickness is 12 μm or more.
3 . The photoelectric conversion element according to claim 1 , wherein the joint portion between the collecting electrode and the conductor is provided at a position overlapping the photoelectric conversion layer when viewed from a direction orthogonal to an interface of the photoelectric conversion layer.
4 . The photoelectric conversion element according to claim 1 , wherein a material constituting the collecting electrode comprises at least one of indium tin oxide, indium titanium oxide, indium zinc oxide, tin zinc doped indium oxide, tungsten doped indium oxide, hydrogen doped indium oxide, indium gallium zinc oxide, zinc tin oxide, fluorine doped tin oxide, aluminum doped zinc oxide, boron doped zinc oxide, gallium doped zinc oxide, Ni, Ti, Cr, Mo, Al, Ag, and Cu.
5 . The photoelectric conversion element according to claim 1 , comprising a layer having a hexagonal crystal structure.
6 . The photoelectric conversion element according to claim 1 , wherein the photoelectric conversion layer includes a chalcogen semiconductor containing a chalcogen element.
7 . The photoelectric conversion element according to claim 1 , wherein the conductor is a wiring.
8 . A solar cell module comprising the photoelectric conversion element according to claim 1 .
9 . A paddle comprising the solar cell module according to claim 8 .
10 . A method for manufacturing a photoelectric conversion element comprising: forming a photoelectric conversion layer; forming an electrode layer adjacent to the photoelectric conversion layer; forming a collecting electrode adjacent to the electrode layer, the collecting electrode being provided with a plurality of line-like first portions and a second portion extending in one direction, the second portion being directly connected to the plurality of line-like first portions; and joining a conductor to the second portion of the collecting electrode so as to extend in a direction intersecting said one direction, in this order, wherein a thickness of the collecting electrode at least at a joint portion between the collecting electrode and the conductor is 4 μm or more.
11 . The photoelectric conversion element according to claim 1 , wherein the conductor is melt joining directly to the collecting electrode.
12 . The photoelectric conversion element according to claim 6 , comprising: a first electrode layer; and a first buffer layer between the photoelectric conversion layer and the first electrode layer, wherein the first buffer layer includes Mo (Se, S) 2 layer, MoSe 2 layer, MoS 2 layer, or Cr x TaS 2 layer.
13 . The photoelectric conversion element according to claim 1 , wherein the collecting electrode comprises a laminate including: a nickel layer in contact with the electrode layer; and an aluminum layer on the nickel layer.
14 . The method for manufacturing a photoelectric conversion element according to claim 12 , wherein the conductor is melt joining directly to the collecting electrode.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS The present application claims priority under 35 U.S.C. § 371 to International Patent Application No. PCT/JP2022/024546, filed Jun. 20, 2022, which claims priority to and the benefit of Japanese Patent Application No. 2021-107135, filed on Jun. 28, 2021. The contents of these applications are hereby incorporated by reference in their entireties. TECHNICAL FIELD The present invention relates to a photoelectric conversion element and a method for manufacturing the photoelectric conversion element. BACKGROUND ART A photoelectric conversion element that converts light energy into electric energy is known (Patent Literature 1). In the photoelectric conversion element described in Patent Literature 1, a collecting electrode is attached on a photovoltaic element having a multilayer structure. In addition, the photoelectric conversion element described in Patent Literature 1 includes a round as a connection terminal portion disposed at an end portion of the collecting electrode, and a relay terminal portion provided for electrical connection with the outside. The round and the relay terminal portion are electrically connected by a connection lead. CITATION LIST Patent Literature Patent Literature 1: JP H09-237911 A SUMMARY The inventors of the present application found a problem that a layer and a wiring which constitute a photoelectric conversion element may be peeled off by a force pulled from a wiring joined to a collecting electrode. When such peeling occurs, the photoelectric conversion efficiency of the photoelectric conversion element may decrease, or the photoelectric conversion function may be lost. Therefore, a photoelectric conversion element capable of suppressing a decrease in strength and a method for manufacturing such the photoelectric conversion element are desired. A photoelectric conversion element according to one aspect comprises: a photoelectric conversion layer; an electrode layer adjacent to the photoelectric conversion layer; a collecting electrode adjacent to the electrode layer; and a conductor joined to the collecting electrode. A thickness of the collecting electrode at least at a joint portion between the collecting electrode and the conductor is 4 μm or more. A method for manufacturing a photoelectric conversion element according to one aspect comprises: a step of forming a photoelectric conversion layer; a step of forming an electrode layer adjacent to the photoelectric conversion layer; a step of forming a collecting electrode adjacent to the electrode layer; and a step of joining a conductor to the collecting electrode. A thickness of the collecting electrode at least at a joint portion between the collecting electrode and the conductor is 4 μm or more. BRIEF DESCRIPTION OF DRAWINGS FIG. 1 is a schematic plan view of a photoelectric conversion element according to an embodiment. FIG. 2 is a schematic cross-sectional view of the photoelectric conversion element taken along line 2A-2A in FIG. 1. FIG. 3 is a graph showing a relationship between a thickness of a wiring and a tensile strength of a photoelectric conversion element. FIG. 4 is a schematic plan view of a solar cell module including a photoelectric conversion element. FIG. 5 is a schematic perspective view of an artificial satellite including a solar cell module. DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments will be described with reference to the drawings. In the following drawings, the same or similar parts are denoted by the same or similar reference numerals. However, it should be noted that the drawings are schematic, and ratios of dimensions and the like may be different from actual ones. FIG. 1 is a schematic plan view of a photoelectric conversion element according to an embodiment. FIG. 2 is a schematic cross-sectional view of the photoelectric conversion element taken along line 2A-2A in FIG. 1. A photoelectric conversion element 10 according to the present embodiment may be a photoelectric conversion element of a thin film type. Preferably, the photoelectric conversion element 10 is a solar cell element that converts light energy into electrical energy. The photoelectric conversion element 10 includes a substrate 20 serving as a base on which each film is formed. A substrate 20 may be constructed by, for example, glass, ceramics, resin, metal, or the like. The substrate 20 may be a flexible substrate. A shape and dimensions of the substrate 20 are appropriately determined depending on a size and the like of the photoelectric conversion element 10. When a metal substrate is adopted as the substrate 20, the substrate 20 is formed of, for example, titanium (Ti), stainless steel (SUS), copper, aluminum, an alloy thereof, or the like. Alternatively, the substrate 20 may have a laminated structure in which a plurality of metal substrates are laminated, and for example, a stainless foil, a titanium foil, or a molybdenum foil may be formed on a surface of the substrate. When t