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US-12628470-B2 - Light-emitting diode epitaxial structure and manufacturing method thereof, and light-emitting diode device

US12628470B2US 12628470 B2US12628470 B2US 12628470B2US-12628470-B2

Abstract

A light-emitting diode (LED) epitaxial structure, an LED device, and a manufacturing method of an LED epitaxial structure are provided. The LED epitaxial structure 100 includes an n-type confinement layer 20 , an n-type waveguide layer 30 , a light-emitting layer 40 , a p-type waveguide layer 50 , and a p-type confinement layer 60 that are sequentially stacked. The p-type waveguide layer 50 includes a first p-type waveguide sub-layer 51 , an electron blocking layer 52 , and a second p-type waveguide sub-layer 53 that are sequentially stacked, where the first p-type waveguide sub-layer 51 is disposed closer to the light-emitting layer 40 than the second p-type waveguide sub-layer 53 , and the electron blocking layer 52 includes at least one oxide layer of aluminum y gallium 1-y arsenide (Al y Ga 1-y As) 521.

Inventors

  • Zhongshan FENG

Assignees

  • CHONGQING KONKA PHOTOELECTRIC TECHNOLOGY RESEARCH INSTITUTE CO., LTD.

Dates

Publication Date
20260512
Application Date
20221021

Claims (16)

  1. 1 . A light-emitting diode (LED) epitaxial structure, comprising an n-type confinement layer, an n-type waveguide layer, a light-emitting layer, a p-type waveguide layer, and a p-type confinement layer that are sequentially stacked, wherein the p-type waveguide layer comprises a first p-type waveguide sub-layer, an electron blocking layer, and a second p-type waveguide sub-layer that are sequentially stacked, wherein the first p-type waveguide sub-layer is disposed closer to the light-emitting layer than the second p-type waveguide sub-layer, and the electron blocking layer comprises at least two oxide layers of aluminum y gallium 1-y arsenide (Al y Ga 1-y As) and at least one (aluminum x gallium 1-x ) 0.5 indium 0.5 phosphorus (Al x Ga 1-x ) 0.5 In 0.5 P) layer that are stacked, and the (Al x Ga 1-x ) 0.5 In 0.5 P layer and the oxide layers of Al y Ga 1-y As are alternately stacked, and wherein the number of oxide layers of Al y Ga 1-y As is one more than the number of (Al x Ga 1-x ) 0.5 In 0.5 P layers, and two layers among the at least two oxide layers of Al y Ga 1-y As are respectively disposed close to the first p-type waveguide sub-layer and the second p-type waveguide sub-layer.
  2. 2 . The LED epitaxial structure of claim 1 , wherein each of the two at least oxide layers of Al y Ga 1-y As has a thickness ranging from 1 nm to 5 nm.
  3. 3 . The LED epitaxial structure of claim 1 , wherein the electron blocking layer comprises 3 to 11 oxide layers of Al y Ga 1-y As and 2 to 10 (Al x Ga 1-x ) 0.5 In 0.5 P layers.
  4. 4 . The LED epitaxial structure of claim 1 , wherein a value of y of an oxide of Al y Ga 1-y As satisfies 0.5≤y≤1.0.
  5. 5 . The LED epitaxial structure of claim 1 , wherein an oxide layer of the at least two oxide layers of Al y Ga 1-y As comprises an oxide of carbon-doped Al y Ga 1-y As.
  6. 6 . The LED epitaxial structure of claim 1 , wherein a value of x of (Al x Ga 1-x ) 0.5 In 0.5 P satisfies 0.5≤x≤1.0.
  7. 7 . The LED epitaxial structure of claim 1 , wherein the light-emitting layer is a multiple quantum well (MQW) active layer, wherein the MQW active layer comprises at least one potential barrier layer and at least one potential well layer that are alternately stacked.
  8. 8 . A light-emitting diode (LED) device, comprising an n electrode, a p electrode, and an LED epitaxial structure comprising an n-type confinement layer, an n-type waveguide layer, a light-emitting layer, a p-type waveguide layer, and a p-type confinement layer that are sequentially stacked, wherein the p-type waveguide layer comprises a first p-type waveguide sub-layer, an electron blocking layer, and a second p-type waveguide sub-layer that are sequentially stacked, wherein the first p-type waveguide sub-layer is disposed closer to the light-emitting layer than the second p-type waveguide sub-layer, and the electron blocking layer comprises at least two oxide layers of aluminum y gallium 1-y arsenide (Al y Ga 1-y As) and at least one (aluminum x gallium 1-x ) 0.5 indium 0.5 phosphorus ((Al x Ga 1-x ) 0.5 In 0.5 P) layer that are stacked, and the (Al x Ga 1-x ) 0.5 In 0.5 P layer and the oxide layers of Al y Ga 1-y As are alternately stacked, wherein the number of oxide layers of Al y Ga 1-y As is one more than the number of (Al x Ga 1-x ) 0.5 In 0.5 Players, and two layers among the at least two oxide layers of Al y Ga 1-y As are respectively disposed close to the first p-type waveguide sub-layer and the second p-type waveguide sub-layer, and wherein the n electrode is electrically coupled with the n-type confinement layer, and the p electrode is electrically coupled with the p-type confinement layer.
  9. 9 . The LED device of claim 8 , wherein each of the at least two oxide layers of Al y Ga 1-y As has a thickness ranging from 1 nm to 5 nm.
  10. 10 . The LED device of claim 8 , wherein the electron blocking layer comprises 3 to 11 oxide layers of Al y Ga 1-y As and 2 to 10 (Al x Ga 1-x ) 0.5 In 0.5 P layers.
  11. 11 . The LED device of claim 8 , wherein a value of y of an oxide of Al y Ga 1-y As satisfies 0.5≤y≤1.0.
  12. 12 . The LED device of claim 8 , wherein an oxide layer of the two oxide layers of Al y Ga 1-y As comprises an oxide of carbon-doped Al y Ga 1-y As.
  13. 13 . The LED device of claim 8 , wherein a value of x of (Al x Ga 1-x ) 0.5 In 0.5 P satisfies 0.5≤x≤1.0.
  14. 14 . The LED device of claim 8 , wherein the light-emitting layer is a multiple quantum well (MQW) active layer, wherein the MQW active layer comprises at least one potential barrier layer and at least one potential well layer that are alternately stacked.
  15. 15 . A manufacturing method of a light-emitting diode (LED) epitaxial structure, comprising: providing a substrate; forming an n-type confinement layer on the substrate; forming an n-type waveguide layer on one side of the n-type confinement layer away from the substrate; forming a light-emitting layer on one side of the n-type waveguide layer away from the n-type confinement layer; forming a p-type waveguide layer on one side of the light-emitting layer away from the n-type waveguide layer, wherein forming the p-type waveguide layer comprises forming, on one side of the light-emitting layer away from the n-type waveguide layer, a first p-type waveguide sub-layer, an electron blocking layer, and a second p-type waveguide sub-layer that are sequentially stacked, and the electron blocking layer comprises at least two oxide layers of aluminum y gallium 1-y arsenide (Al y Ga 1-y As); and forming a p-type confinement layer on one side of the p-type waveguide layer away from the light-emitting layer, wherein forming the electron blocking layer comprises: forming an Al y Ga 1-y As layer on one side of the first p-type waveguide sub-layer away from the light-emitting layer by introducing arsine, trimethylgallium (TMGa), and trimethylaluminium (TMAl); forming an (aluminum x gallium 1-x ) 0.5 indium 0.5 phosphorus(Al x Ga 1-x ) 0.5 In 0.5 P) layer on one side of the Al y Ga 1-y As layer away from the first p-type waveguide sub-layer by introducing phosphine, TMGa, TMAl, and trimethylindium; forming, on the side of the first p-type waveguide sub-layer away from the light-emitting layer, Al y Ga 1-y As layers and (Al x Ga 1-x ) 0.5 In 0.5 P layers that are alternately stacked by repeatedly and alternately forming the Al y Ga 1-y As layers and the (Al x Ga 1-x ) 0.5 In 0.5 P layers; and forming the oxide layers of Al y Ga 1-y As by oxidizing the Al y Ga 1-y As layers.
  16. 16 . The manufacturing method of an LED epitaxial structure of claim 15 , wherein forming the Al y Ga 1-y As layer on the side of the first p-type waveguide sub-layer away from the light-emitting layer by introducing arsine, TMGa, and TMAl comprises: forming a carbon-doped Al y Ga 1-y As layer on the side of the first p-type waveguide sub-layer away from the light-emitting layer by introducing arsine, TMGa, TMAl, and a carbon precursor, wherein the carbon precursor comprises tetrabromomethane or tetrachloromethane.

Description

CROSS-REFERENCE TO RELATED APPLICATION(S) This application is a continuation of International Application No. PCT/CN2021/108642, filed Jul. 27, 2021, the entire disclosure of which is hereby incorporated by reference. TECHNICAL FIELD This application relates to the field of semiconductor light-emitting technology, and more particularly to a light-emitting diode (LED) epitaxial structure and a manufacturing method thereof, and an LED device. BACKGROUND Light-emitting diode (LED) devices have been widely used in various fields such as display technology, signal lights, interior and exterior indicators for vehicles, traffic lights, phones, electronic instruments, indoor and outdoor display, information processing, and communication, because of advantages such as low power consumption, small size, long life, low drive voltage, durability, and good monochromaticity. A red-light LED device includes an epitaxial structure. For blocking overflow of electrons from a light-emitting layer in the epitaxial structure, increasing a probability of radiative recombination between the electrons and holes in the light-emitting layer, and further increasing light-emitting efficiency of the red-light LED device, generally, an electron blocking layer is disposed in the epitaxial structure. Traditionally, the electron blocking layer is made of aluminumxindium1-xphosphorus (AlxIn1-xP), where the AlxIn1-xP is confined by lattice matching, and x generally ranges from 0.45 to 0.55, such that a band gap of the AlxIn1-xP is narrower, an energy level difference between the electron blocking layer and the light-emitting layer is lower, and an electron blocking effect is worse, and thus causing problems of the red-light LED device such as sharply decreased light-emitting efficiency, a low reverse-bias resistant property, and a poor antistatic ability. Even though a thickness of the AlxIn1-xP of the electron blocking layer is increased, the electron blocking effect is limitedly improved, and in addition, increase of the thickness of the electron blocking layer may decrease an electrical property of the red-light LED device. SUMMARY An LED epitaxial structure is provided. The LED epitaxial structure includes an n-type confinement layer, an n-type waveguide layer, a light-emitting layer, a p-type waveguide layer, and a p-type confinement layer that are sequentially stacked. The p-type waveguide layer includes a first p-type waveguide sub-layer, an electron blocking layer, and a second p-type waveguide sub-layer that are sequentially stacked, where the first p-type waveguide sub-layer is disposed closer to the light-emitting layer than the second p-type waveguide sub-layer, and the electron blocking layer includes at least one oxide layer of aluminumygallium1-yarsenide (AlyGa1-yAs). An LED device is further provided in the disclosure. The LED device includes an n electrode, a p electrode, and the above LED epitaxial structure, where the n electrode is electrically coupled with the n-type confinement layer, and the p electrode is electrically coupled with the p-type confinement layer. A manufacturing method of an LED epitaxial structure is further provided in the disclosure. The manufacturing method of an LED epitaxial structure includes the following. A substrate is provided. An n-type confinement layer is formed on the substrate. An n-type waveguide layer is formed on one side of the n-type confinement layer away from the substrate. A light-emitting layer is formed on one side of the n-type waveguide layer away from the n-type confinement layer. A p-type waveguide layer is formed on one side of the light-emitting layer away from the n-type waveguide layer. The p-type waveguide layer is formed as follows. A first p-type waveguide sub-layer, an electron blocking layer, and a second p-type waveguide sub-layer that are sequentially stacked are formed on one side of the light-emitting layer away from the n-type waveguide layer. The electron blocking layer includes at least one oxide layer of AlyGa1-yAs. A p-type confinement layer is formed on one side of the p-type waveguide layer away from the light-emitting layer. BRIEF DESCRIPTION OF THE DRAWINGS In order to describe technical solutions in implementations of the disclosure more clearly, the following will give a brief introduction to the accompanying drawings required in implementations. Apparently, the accompanying drawings hereinafter described are some implementations of the disclosure. Based on these drawings, those of ordinary skill in the art can also obtain other drawings without creative effort. FIG. 1 is a schematic cross-sectional structural diagram illustrating a light-emitting diode (LED) epitaxial structure provided in implementations of the disclosure. FIG. 2 is a schematic cross-sectional structural diagram illustrating an electron blocking layer provided in implementations of the disclosure. FIG. 3 is a schematic cross-sectional structural diagram illustrating an electron bloc