US-12628485-B2 - Light-emitting chip structure, display device, and method for manufacturing display device

US12628485B2US 12628485 B2US12628485 B2US 12628485B2US-12628485-B2

Abstract

A light-emitting chip structure, a display device, and a method for manufacturing a display device are provided. The light-emitting chip structure includes a protective layer, a buffer layer, an epitaxial layer, a patterned metal layer, a light-shielding layer, and an electrode layer. The epitaxial layer is divided into multiple epitaxial structures by multiple first gaps thereof. A side surface of a first semiconductor layer of the epitaxial layer is arranged with a protruding portion. One part of a patterned metal layer is disposed on a bottom of each of the first gaps to cover the protruding portion and a part of the buffer layer exposed through the first gaps, and the other part of the patterned metal layer is disposed on a side surface of the epitaxial structure at an edge of the light-emitting chip structure and a surface of the epitaxial structure away from the buffer layer.

Inventors

Zeyao Li
Baohong KANG

Assignees

CHONGQING HKC OPTOELECTRONICS TECHNOLOGY CO., LTD.
HKC Corporation Limited

Dates

Publication Date: 20260512
Application Date: 20230815
Priority Date: 20230313

Claims (18)

1 . A light-emitting chip structure, comprising: a protective layer; a buffer layer, arranged on a side of the protective layer; an epitaxial layer, arranged on a side of the buffer layer and comprising a plurality of first gaps, wherein the epitaxial layer is divided into a plurality of epitaxial structures by the plurality of first gaps, each of the plurality of epitaxial structures comprises a first semiconductor layer, a light-emitting layer, and a second semiconductor layer which are sequentially stacked on the side of the buffer layer, and a side surface of the first semiconductor layer is arranged with a protruding portion; a patterned metal layer, one part of the patterned metal layer being arranged on a bottom of each of the plurality of first gaps to cover the protruding portion and a part of the buffer layer exposed through the plurality of first gaps, and the other part of the patterned metal layer being arranged on a side surface of each of the plurality of epitaxial structures at an edge of the light-emitting chip structure and a surface of each of the plurality of epitaxial structures away from the buffer layer; a light-shielding layer, configured to cover the epitaxial layer and the patterned metal layer, and filled in the plurality of first gaps, wherein a first opening is defined at a position of the light-shielding layer corresponding to the epitaxial structure; and an electrode layer, comprising at least one first electrode and a plurality of second electrodes, wherein the first electrode is inserted through the first opening and electrically connected with the patterned metal layer, and the plurality of second electrodes are inserted through the first opening and electrically connected with the second semiconductor layer; wherein a groove is defined on a surface of the buffer layer exposed through the first gap, and the patterned metal layer covers a bottom surface and a side surface of the groove.
2 . The light-emitting chip structure according to claim 1 , wherein the first semiconductor layer comprises a body portion disposed between the light-emitting layer and the buffer layer and the protruding portion disposed on a side surface of the body portion, and a thickness of the protruding portion is less than a thickness of the body portion.
3 . The light-emitting chip structure according to claim 1 , wherein the surface of the buffer layer exposed through the first gap is recessed overall to form the groove.
4 . The light-emitting chip structure according to claim 1 , wherein a distance between the protruding portions of different epitaxial structures is the same as a width of the groove.
5 . The light-emitting chip structure according to claim 1 , wherein the patterned metal layer is formed of a single material.
6 . The light-emitting chip structure according to claim 1 , wherein the first semiconductor layer is a N-type layer, the second semiconductor layer is a P-type layer, and an ohmic contact layer is further arranged between the P-shaped layer and the second electrode.
7 . The light-emitting chip structure according to claim 1 , further comprising: a plurality of quantum dot layers, arranged between the protective layer and the buffer layer, and corresponding to the epitaxial structure.
8 . The light-emitting chip structure according to claim 7 , wherein the quantum dot layer comprises a red quantum dot layer and a green quantum dot layer.
9 . The light-emitting chip structure according to claim 7 , further comprising: a black matrix layer, arranged on a side of the protective layer close to the buffer layer and disposed in a second gap between adjacent quantum dot layers.
10 . The light-emitting chip structure according to claim 9 , wherein a material of the black matrix layer comprises at least one of Cr and black resin.
11 . The light-emitting chip structure according to claim 9 , wherein a second opening is defined on a position of the buffer layer corresponding to the first gap, the black matrix layer passes through the second opening and contacts the patterned metal layer, and a surface of the quantum dot layer away from the epitaxial layer is higher than or flush with a surface of the black matrix layer away from the epitaxial layer.
12 . The light-emitting chip structure according to claim 1 , wherein a material of the patterned metal layer is any one or a combination of aluminum, copper, and silver.
13 . The light-emitting chip structure according to claim 1 , wherein the light-emitting layer is a quantum-well active layer or an active layer.
14 . A display device, comprising: a driving back plate and a light-emitting chip structure; wherein, the light-emitting chip structure comprises: a protective layer; a buffer layer, arranged on a side of the protective layer; an epitaxial layer, arranged on a side of the buffer layer and comprising a plurality of first gaps, wherein the epitaxial layer is divided into a plurality of epitaxial structures by the plurality of first gaps, each of the plurality of epitaxial structures comprises a first semiconductor layer, a light-emitting layer, and a second semiconductor layer which are sequentially stacked on the side of the buffer layer, and a side surface of the first semiconductor layer is arranged with a protruding portion; a patterned metal layer, one part of the patterned metal layer being arranged on a bottom of each of the plurality of first gaps to cover the protruding portion and a part of the buffer layer exposed through the plurality of first gaps, and the other part of the patterned metal layer being arranged on a side surface of each of the plurality of epitaxial structures at an edge of the light-emitting chip structure and a surface of each of the plurality of epitaxial structures away from the buffer layer; a light-shielding layer, configured to cover the epitaxial layer and the patterned metal layer, filled in the plurality of first gaps, wherein a first opening is defined at a position of the light-shielding layer corresponding to the epitaxial structure; and an electrode layer, comprising at least one first electrode and a plurality of second electrodes, wherein the first electrode is inserted through the first opening and electrically connected with the patterned metal layer, and the plurality of second electrodes are inserted through the first opening and electrically connected with the second semiconductor layer; the driving back plate is connected to the electrode layer in a bonding way; wherein a groove is defined on a surface of the buffer layer exposed through the first gap, and the patterned metal layer covers a bottom surface and a side surface of the groove.
15 . The display device according to claim 14 , wherein the light-emitting chip structure further comprises: a black matrix layer, arranged on a side of the protective layer close to the buffer layer and disposed in a second gap between adjacent quantum dot layers.
16 . A method for manufacturing a display device, comprising: disposing a buffer layer and an epitaxial layer on a substrate; etching the epitaxial layer to form a protruding portion on a first semiconductor layer, and defining a groove on the buffer layer to form a first gap; disposing a patterned metal layer on the first semiconductor layer and the buffer layer; disposing a light-shielding layer in the first gap between the epitaxial structures, and reserving a first opening at a position where the electrode layer is located; depositing an electrode layer at a position where the first opening is located; and defining a second opening on a side of the buffer layer facing the patterned metal layer, and filling a black matrix layer in the second opening.
17 . The method according to claim 16 , wherein the disposing a buffer layer and an epitaxial layer on a substrate comprises: disposing the buffer layer on a side of the substrate; and stacking a first semiconductor layer, a light-emitting layer, and a second semiconductor layer sequentially on a side of the buffer layer away from the substrate; wherein the epitaxial layer comprises the first semiconductor layer, the light-emitting layer, and the second semiconductor layer.
18 . The method according to claim 8 , further comprising: disposing a quantum dot layer between black matrix layers; and disposing a protective layer; wherein the quantum dot layer is arranged between the protective layer and the buffer layer.

Description

CROSS REFERENCE TO RELATED APPLICATIONS The present disclosure claims priority to Chinese Patent Application No. 202320475736.9, filed on Mar. 13, 2023 in the National Intellectual Property Administration of China, the contents of which are herein incorporated by reference in their entireties. TECHNICAL FIELD The present disclosure relates to the field of chips technologies, in particular to a light-emitting chip structure, a display device, and a method for manufacturing a display device. BACKGROUND An inorganic micro light emitting diode (Micro LED) display is one of the hot spots in the field of display research today. The Micro LED display refers to a high-density integrated LED array, and each LED pixel of the Micro LED display may emit light. As a new generation of display technology, Micro LED has significant advantages over existing LCD and OLED displays, such as low energy consumption, long lifespan, no screen burn-in, high color gamut, etc. However, if the Micro LED display device is to achieve full color, there is still a problem of light crosstalk that needs to be solved. SUMMARY OF THE DISCLOSURE According to a first aspect of the present disclosure, a light-emitting chip structure is provided. The light-emitting chip structure includes: a protective layer; a buffer layer, arranged on a side of the protective layer; an epitaxial layer, arranged on a side of the buffer layer and including a plurality of first gaps, wherein the epitaxial layer is divided into a plurality of epitaxial structures by the plurality of first gaps, each of the plurality of epitaxial structures includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer which are sequentially stacked on the side of the buffer layer, and a side surface of the first semiconductor layer is arranged with a protruding portion; a patterned metal layer, one part of the patterned metal layer being arranged on a bottom of each of the plurality of first gaps to cover the protruding portion and a part of the buffer layer exposed through the plurality of first gaps, and the other part of the patterned metal layer being arranged on a side surface of each of the plurality of epitaxial structures at an edge of the light-emitting chip structure and a surface of each of the plurality of epitaxial structures away from the buffer layer; a light-shielding layer, configured to cover the epitaxial layer and the patterned metal layer, and filled in the plurality of first gaps, wherein a first opening is defined at a position of the light-shielding layer corresponding to the epitaxial structure; and an electrode layer, including at least one first electrode and a plurality of second electrodes, wherein the first electrode is inserted through the first opening and electrically connected with the patterned metal layer, and the plurality of second electrodes are inserted through the first opening and electrically connected with the second semiconductor layer. According to a second aspect of the present disclosure, a display device is provided. The display device includes a driving back plate and the above-mentioned light-emitting chip structure. The driving back plate is connected to the electrode layer in a bonding way. According to a third aspect of the present disclosure, a method for manufacturing a display device is provided. The method for manufacturing a display device includes: disposing a buffer layer and an epitaxial layer on a substrate; etching the epitaxial layer to form a protruding portion on a first semiconductor layer, and defining a groove on the buffer layer to form a first gap; disposing a patterned metal layer on the first semiconductor layer and the buffer layer; disposing a light-shielding layer in the first gap between the epitaxial structures, and reserving a first opening at a position where the electrode layer is located; and depositing an electrode layer at a position where the first opening is located. BRIEF DESCRIPTION OF THE DRAWINGS REFERENCE NUMBERS IN THE DRAWINGS In order to illustrate more clearly the technical solutions in the embodiments of the present disclosure, drawings for describing the embodiments will be described briefly in the following. Apparently, the described drawings show only some of the embodiments of the present disclosure, any ordinary skilled person in the art shall obtain other drawings without any creative work. FIG. 1 is a structural schematic view of a light-emitting chip structure according to a first embodiment of the present disclosure. FIG. 2 is a structural schematic view of the light-emitting chip structure according to a second embodiment of the present disclosure. FIG. 3 is a structural schematic view of the light-emitting chip structure according to a third embodiment of the present disclosure. FIG. 4 is a structural schematic view of the light-emitting chip structure according to a fourth embodiment of the present disclosure. FIG. 5 is a structural schematic