US-12628512-B2 - Electronic device

US12628512B2US 12628512 B2US12628512 B2US 12628512B2US-12628512-B2

Abstract

An electronic device is provided. The electronic device includes a substrate, a thin-film transistor, a first insulating layer, and a pixel electrode. The thin-film transistor is disposed on the substrate, and includes a semiconductor layer, a gate electrode, a source electrode and a drain electrode. The semiconductor layer includes a metal oxide. The first insulating layer is disposed on the thin-film transistor and has a first via hole. The pixel electrode is disposed on the first insulating layer, and is electrically connected to either the source electrode or the drain electrode through the first via hole. In addition, the first via hole at least partially overlaps the gate electrode in a normal direction of the substrate.

Inventors

Chia-Hao Tsai
Ming-Chen Liu

Assignees

Innolux Corporation

Dates

Publication Date: 20260512
Application Date: 20230628
Priority Date: 20220804

Claims (18)

1 . An electronic device, comprising: a substrate; a thin-film transistor disposed on the substrate and comprising a semiconductor layer, a gate electrode, a source electrode and a drain electrode, wherein the semiconductor layer comprises a metal oxide; a first insulating layer disposed on the thin film-transistor and having a first via hole; a pixel electrode disposed on the first insulating layer and electrically connected to either the source electrode or the drain electrode through the first via hole; a light-shielding layer disposed between the substrate and the thin-film transistor, wherein the first via hole at least partially overlaps the light-shielding layer in a normal direction of the substrate; and a scan line and a black matrix, wherein the scan line extends along a first direction, the black matrix at least partially overlaps the thin-film transistor in the normal direction, wherein the light-shielding layer has a fourth width in a second direction perpendicular to the first direction, a portion of the black matrix extends along the first direction and has a fifth width in the second direction, and the fifth width is smaller than the fourth width, wherein the first via hole at least partially overlaps the gate electrode in a normal direction.
2 . The electronic device as claimed in claim 1 , wherein either the source electrode or the drain electrode is formed of a transparent conductive material.
3 . The electronic device as claimed in claim 1 , wherein in a cross-sectional view, the first via hole has a sidewall, and an included angle between the sidewall and a top surface of the substrate is greater than or equal to 30 degrees and less than 90 degrees.
4 . The electronic device as claimed in claim 1 , wherein in a cross-sectional view, a first width of the light-shielding layer is greater than a second width of the first via hole.
5 . The electronic device as claimed in claim 4 , wherein in the cross-sectional view, the first width is greater than a third width of the gate electrode.
6 . The electronic device as claimed in claim 1 , wherein the fourth width of the light-shielding layer varies along the first direction.
7 . The electronic device as claimed in claim 1 , wherein the black matrix at least partially overlaps the thin-film transistor in the normal direction.
8 . The electronic device as claimed in claim 1 , wherein an area of the light-shielding layer with the smaller fourth width corresponds to a red pixel area, and an area of the light-shielding layer with the larger fourth width corresponds to a blue pixel area.
9 . The electronic device as claimed in claim 1 , wherein the electronic device has a display area and a non-display area adjacent to the display area, and the electronic device further comprises a conductive layer, the conductive layer is disposed in the non-display area, and the light-shielding layer is disposed in the display area, wherein the conductive layer and the light-shielding layer belong to the same layer level, and a thickness of the conductive layer is smaller than a thickness of the light-shielding layer.
10 . The electronic device as claimed in claim 1 , wherein the light-shielding layer is electrically connected to the gate electrode, electrically connected to a circuit for providing a bias signal, or grounded.
11 . The electronic device as claimed in claim 1 , further comprising a second insulating layer, wherein the second insulating layer is disposed between the semiconductor layer and the first insulating layer and has a second via hole, wherein either the source electrode or the drain electrode is electrically connected to the semiconductor layer through the second via hole, and the first via hole and the second via hole do not overlap in the normal direction.
12 . The electronic device as claimed in claim 1 , wherein the pixel electrode at least partially overlaps the gate electrode in the normal direction.
13 . The electronic device as claimed in claim 1 , wherein the electronic device has a display area and a non-display area adjacent to the display area, and the electronic device further comprises another thin-film transistor, wherein the other thin-film transistor comprises another semiconductor layer including polysilicon, and the thin-film transistor is disposed in the display area, and the other thin-film transistor is disposed in the non-display area.
14 . The electronic device as claimed in claim 1 , wherein the metal oxide comprises indium gallium zinc oxide (IGZO), indium zinc oxide (IZO), indium gallium oxide (IGO), indium gallium zinc tin oxide (IGZTO), or a combination thereof.
15 . The electronic device as claimed in claim 1 , wherein the semiconductor layer is formed of a light-transmitting metal oxide.
16 . The electronic device as claimed in claim 1 , wherein the first via hole is disposed above the gate electrode.
17 . The electronic device as claimed in claim 1 , wherein the source electrode is electrically connected to a data line, and the drain electrode is electrically connected to the pixel electrode.
18 . The electronic device as claimed in claim 1 , wherein the gate electrode is electrically connected to the scan line.

Description

CROSS REFERENCE TO RELATED APPLICATIONS This application claims the benefit of China Application No. 202210931990.5, filed Aug. 4, 2022, the entirety of which is incorporated by reference herein. BACKGROUND Technical Field The present disclosure is related to an electronic device, and in particular it is related to an electronic device including a thin-film transistor. Description of the Related Art Electronic products that are equipped with display panels, including tablet computers, notebook computers, smartphones, displays and televisions, have become an indispensable necessity in modern society. With the rapid development of these consumer electronics, consumers have high expectations regarding their quality, functionality, or price. However, these electronic devices still do not meet the high expectations placed upon them in all respects. For example, as the resolution increases and the area of the pixels decreases, how to increase the aperture ratio of the pixels is still one of the current research topics in the industry. SUMMARY In accordance with some embodiments of the present disclosure, an electronic device is provided. The electronic device includes a substrate, a thin-film transistor, a first insulating layer, and a pixel electrode. The thin-film transistor is disposed on the substrate, and includes a semiconductor layer, a gate electrode, a source electrode and a drain electrode. The semiconductor layer includes a metal oxide. The first insulating layer is disposed on the thin-film transistor and has a first via hole. The pixel electrode is disposed on the first insulating layer, and is electrically connected to either the source electrode or the drain electrode through the first via hole. In addition, the first via hole at least partially overlaps the gate electrode in a normal direction of the substrate. A detailed description is given in the following embodiments with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS The disclosure may be more fully understood by reading the subsequent detailed description and examples with references made to the accompanying drawings, wherein: FIG. 1 is a partial top-view diagram of an electronic device in accordance with some embodiments of the present disclosure; FIG. 2 is a cross-sectional diagram of an electronic device corresponding to the section line A-A′ in FIG. 1 in accordance with some embodiments of the present disclosure; FIG. 3 is a cross-sectional diagram of an electronic device corresponding to the section line B-B′ in FIG. 1 in accordance with some embodiments of the present disclosure; FIG. 4 is a partial bottom-view diagram of an electronic device in accordance with some embodiments of the present disclosure. DETAILED DESCRIPTION The electronic device according to the present disclosure is described in detail in the following description. It should be understood that in the following detailed description, for purposes of explanation, numerous specific details and embodiments are set forth in order to provide a thorough understanding of the present disclosure. The elements and configurations described in the following detailed description are set forth in order to clearly describe the present disclosure. These embodiments are used merely for the purpose of illustration, and the present disclosure is not limited thereto. In addition, different embodiments may use like and/or corresponding numerals to denote like and/or corresponding elements in order to clearly describe the present disclosure. However, the use of like and/or corresponding numerals of different embodiments does not suggest any correlation between different embodiments. It should be understood that relative expressions may be used in the embodiments. For example, “lower”, “bottom”, “higher” or “top” are used to describe the position of one element relative to another. It should be appreciated that if a device is flipped upside down, an element that is “lower” will become an element that is “higher”. The present disclosure can be understood by referring to the following detailed description in connection with the accompanying drawings. The drawings are also regarded as part of the description of the present disclosure. It should be understood that the drawings of the present disclosure may be not drawn to scale. In fact, the size of the elements may be arbitrarily enlarged or reduced to clearly represent the features of the present disclosure. Furthermore, the expression “a first material layer is disposed on or over a second material layer” may indicate that the first material layer is in direct contact with the second material layer, or it may indicate that the first material layer is in indirect contact with the second material layer. In the situation where the first material layer is in indirect contact with the second material layer, there may be one or more intermediate layers between the first material layer and the second material layer. Howeve