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US-12628555-B2 - Compound and thin film transistor and electronic device

US12628555B2US 12628555 B2US12628555 B2US 12628555B2US-12628555-B2

Abstract

Disclosed are a compound represented by Chemical Formula 1A or 1B, an organic thin film including the same, a thin film transistor, and an electronic device. In Chemical Formulae 1A and 1B, X 1 , X 2 , R 1 to R 4 , and n1 are the same as described in the detailed description.

Inventors

  • Eun Kyung Lee
  • Don-wook Lee
  • Jeong Il Park

Assignees

  • SAMSUNG ELECTRONICS CO., LTD.

Dates

Publication Date
20260512
Application Date
20220808
Priority Date
20180828

Claims (12)

  1. 1 . A thin film transistor comprising a gate electrode, an organic semiconductor overlapping with the gate electrode, and a source electrode and a drain electrode electrically connected to the organic semiconductor, the organic semiconductor including a compound represented by Chemical Formula 1A or 1B, wherein, in Chemical Formulae 1A and 1B, X 1 and X 2 are different from each other and are independently one of O, S, Se, and Te, provided that one of X 1 and X 2 is Se or Te, R 1 to R 4 are independently one of hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C6 to C30 aryloxy group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen, a cyano group, or a combination thereof, provided that R 1 and R 2 are different from each other, and n 1 is an integer ranging from 2 to 4, and substituted refers to replacement of hydrogen of a group by a substituent selected from a halogen atom, a hydroxy group, a nitro group, a cyano group, an amino group, an azido group, an amidino group, a hydrazino group, a hydrazono group, a carbonyl group, a carbamyl group, a thiol group, an ester group, a carboxyl group, a sulfonic acid group, a phosphoric acid group, a C1 to C20 alkyl group, a C2 to C20 alkenyl group, a C2 to C20 alkynyl group, a C6 to C30 aryl group, a C3 to C30 heteroaryl group, a C7 to C30 arylalkyl group, a C1 to C30 alkoxy group, a C1 to C20 heteroalkyl group, a C3 to C20 heteroarylalkyl group, a C3 to C30 cycloalkyl group, a C3 to C15 cycloalkenyl group, a C6 to C15 cycloalkynyl group, a C3 to C30 heterocycloalkyl group, and a combination thereof.
  2. 2 . The thin film transistor of claim 1 , wherein the other of X 1 and X 2 is S.
  3. 3 . The thin film transistor of claim 1 , wherein one of R 1 and R 2 is hydrogen, the other of R 1 and R 2 is one of a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C6 to C30 aryloxy group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen, a cyano group, or a combination thereof, and substituted refers to replacement of hydrogen of a group by a substituent selected from a halogen atom, a hydroxy group, a nitro group, a cyano group, an amino group, an azido group, an amidino group, a hydrazino group, a hydrazono group, a carbonyl group, a carbamyl group, a thiol group, an ester group, a carboxyl group, a sulfonic acid group, a phosphoric acid group, a C1 to C20 alkyl group, a C2 to C20 alkenyl group, a C2 to C20 alkynyl group, a C6 to C30 aryl group, a C3 to C30 heteroaryl group, a C7 to C30 arylalkyl group, a C1 to C30 alkoxy group, a C1 to C20 heteroalkyl group, a C3 to C20 heteroarylalkyl group, a C3 to C30 cycloalkyl group, a C3 to C15 cycloalkenyl group, a C6 to C15 cycloalkynyl group, a C3 to C30 heterocycloalkyl group, and a combination thereof.
  4. 4 . The thin film transistor of claim 1 , wherein one of R 1 and R 2 is one of a substituted or unsubstituted C1 to C30 linear alkyl group, a substituted or unsubstituted C2 to C30 linear alkenyl group, a substituted or unsubstituted C2 to C30 linear alkynyl group, a substituted or unsubstituted C1 to C30 alkoxy group, or a combination thereof, the other of R 1 and R 2 is one of a substituted or unsubstituted C1 to C30 branched alkyl group, a substituted or unsubstituted C2 to C30 branched alkenyl group, a substituted or unsubstituted C2 to C30 branched alkynyl group, or a combination thereof, and substituted refers to replacement of hydrogen of a group by a substituent selected from a halogen atom, a hydroxy group, a nitro group, a cyano group, an amino group, an azido group, an amidino group, a hydrazino group, a hydrazono group, a carbonyl group, a carbamyl group, a thiol group, an ester group, a carboxyl group, a sulfonic acid group, a phosphoric acid group, a C1 to C20 alkyl group, a C2 to C20 alkenyl group, a C2 to C20 alkynyl group, a C6 to C30 aryl group, a C3 to C30 heteroaryl group, a C7 to C30 arylalkyl group, a C1 to C30 alkoxy group, a C1 to C20 heteroalkyl group, a C3 to C20 heteroarylalkyl group, a C3 to C30 cycloalkyl group, a C3 to C15 cycloalkenyl group, a C6 to C15 cycloalkynyl group, a C3 to C30 heterocycloalkyl group, and a combination thereof.
  5. 5 . The thin film transistor of claim 1 , wherein one of R 1 and R 2 is one of a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C1 to C30 alkoxy group, or a combination thereof, and the other of R 1 and R 2 is one of a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C6 to C30 aryloxy group, a substituted or unsubstituted C3 to C30 heteroaryl group, or a combination thereof, and substituted refers to replacement of hydrogen of a group by a substituent selected from a halogen atom, a hydroxy group, a nitro group, a cyano group, an amino group, an azido group, an amidino group, a hydrazino group, a hydrazono group, a carbonyl group, a carbamyl group, a thiol group, an ester group, a carboxyl group, a sulfonic acid group, a phosphoric acid group, a C1 to C20 alkyl group, a C2 to C20 alkenyl group, a C2 to C20 alkynyl group, a C6 to C30 aryl group, a C3 to C30 heteroaryl group, a C7 to C30 arylalkyl group, a C1 to C30 alkoxy group, a C1 to C20 heteroalkyl group, a C3 to C20 heteroarylalkyl group, a C3 to C30 cycloalkyl group, a C3 to C15 cycloalkenyl group, a C6 to C15 cycloalkynyl group, a C3 to C30 heterocycloalkyl group, and a combination thereof.
  6. 6 . The thin film transistor of claim 1 , wherein one of R 1 and R 2 is a group represented by one of Chemical Formulae 2A to 2C: wherein, in Chemical Formulae 2A to 2C, Z 1 to Z 3 are independently N or CR a , one of Z 1 to Z 3 is N, X 3 is one of O, S, Se, Te, NR b , or CR c R d , m 1 is an integer ranging from 0 to 5, m 2 is an integer ranging from 0 to 3, R 5 , R 6 and R a to R d are independently one of hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C6 to C30 aryloxy group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen, a cyano group, or a combination thereof, when m 1 is two or more, each R 5 is the same or different and two adjacent R 5 's are independently present or linked with each other to form a ring, and when m 2 is two or more, each R 6 is the same or different and two adjacent R 6 's are independently present or linked with each other to form a ring, and substituted refers to replacement of hydrogen of a group by a substituent selected from a halogen atom, a hydroxy group, a nitro group, a cyano group, an amino group, an azido group, an amidino group, a hydrazino group, a hydrazono group, a carbonyl group, a carbamyl group, a thiol group, an ester group, a carboxyl group, a sulfonic acid group, a phosphoric acid group, a C1 to C20 alkyl group, a C2 to C20 alkenyl group, a C2 to C20 alkynyl group, a C6 to C30 aryl group, a C3 to C30 heteroaryl group, a C7 to C30 arylalkyl group, a C1 to C30 alkoxy group, a C1 to C20 heteroalkyl group, a C3 to C20 heteroarylalkyl group, a C3 to C30 cycloalkyl group, a C3 to C15 cycloalkenyl group, a C6 to C15 cycloalkynyl group, a C3 to C30 heterocycloalkyl group, and a combination thereof.
  7. 7 . The thin film transistor of claim 1 , wherein X 1 is O or S, X 2 is Se or Te, one of R 1 and R 2 is hydrogen, and the other of R 1 and R 2 is one of a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C6 to C30 aryloxy group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen, a cyano group, or a combination thereof, and substituted refers to replacement of hydrogen of a group by a substituent selected from a halogen atom, a hydroxy group, a nitro group, a cyano group, an amino group, an azido group, an amidino group, a hydrazino group, a hydrazono group, a carbonyl group, a carbamyl group, a thiol group, an ester group, a carboxyl group, a sulfonic acid group, a phosphoric acid group, a C1 to C20 alkyl group, a C2 to C20 alkenyl group, a C2 to C20 alkynyl group, a C6 to C30 aryl group, a C3 to C30 heteroaryl group, a C7 to C30 arylalkyl group, a C1 to C30 alkoxy group, a C1 to C20 heteroalkyl group, a C3 to C20 heteroarylalkyl group, a C3 to C30 cycloalkyl group, a C3 to C15 cycloalkenyl group, a C6 to C15 cycloalkynyl group, a C3 to C30 heterocycloalkyl group, and a combination thereof.
  8. 8 . The thin film transistor of claim 1 , wherein X 1 is O or S, X 2 is Se or Te, one of R 1 and R 2 is one of a substituted or unsubstituted C1 to C30 linear alkyl group, a substituted or unsubstituted C2 to C30 linear alkenyl group, a substituted or unsubstituted C2 to C30 linear alkynyl group, a substituted or unsubstituted C1 to C30 alkoxy group, or a combination thereof, and the other of R 1 and R 2 is one of a substituted or unsubstituted C1 to C30 branched alkyl group, a substituted or unsubstituted C2 to C30 branched alkenyl group, a substituted or unsubstituted C2 to C30 branched alkynyl group, or a combination thereof, and substituted refers to replacement of hydrogen of a group by a substituent selected from a halogen atom, a hydroxy group, a nitro group, a cyano group, an amino group, an azido group, an amidino group, a hydrazino group, a hydrazono group, a carbonyl group, a carbamyl group, a thiol group, an ester group, a carboxyl group, a sulfonic acid group, a phosphoric acid group, a C1 to C20 alkyl group, a C2 to C20 alkenyl group, a C2 to C20 alkynyl group, a C6 to C30 aryl group, a C3 to C30 heteroaryl group, a C7 to C30 arylalkyl group, a C1 to C30 alkoxy group, a C1 to C20 heteroalkyl group, a C3 to C20 heteroarylalkyl group, a C3 to C30 cycloalkyl group, a C3 to C15 cycloalkenyl group, a C6 to C15 cycloalkynyl group, a C3 to C30 heterocycloalkyl group, and a combination thereof.
  9. 9 . The thin film transistor of claim 1 , wherein X 1 is O or S, X 2 is Se or Te, one of R 1 and R 2 is one of a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C1 to C30 alkoxy group, or a combination thereof, and the other of R 1 and R 2 is one of a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C6 to C30 aryloxy group, a substituted or unsubstituted C3 to C30 heteroaryl group, or a combination thereof, and substituted refers to replacement of hydrogen of a group by a substituent selected from a halogen atom, a hydroxy group, a nitro group, a cyano group, an amino group, an azido group, an amidino group, a hydrazino group, a hydrazono group, a carbonyl group, a carbamyl group, a thiol group, an ester group, a carboxyl group, a sulfonic acid group, a phosphoric acid group, a C1 to C20 alkyl group, a C2 to C20 alkenyl group, a C2 to C20 alkynyl group, a C6 to C30 aryl group, a C3 to C30 heteroaryl group, a C7 to C30 arylalkyl group, a C1 to C30 alkoxy group, a C1 to C20 heteroalkyl group, a C3 to C20 heteroarylalkyl group, a C3 to C30 cycloalkyl group, a C3 to C15 cycloalkenyl group, a C6 to C15 cycloalkynyl group, a C3 to C30 heterocycloalkyl group, and a combination thereof.
  10. 10 . The thin film transistor of claim 1 , wherein the compound is represented by a structure among structures in Group 1: wherein, in Group 1, R 1 and R 2 are independently one of hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C6 to C30 aryloxy group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen, a cyano group, or a combination thereof, provided that R 1 and R 2 are different from each other, and substituted refers to replacement of hydrogen of a group by a substituent selected from a halogen atom, a hydroxy group, a nitro group, a cyano group, an amino group, an azido group, an amidino group, a hydrazino group, a hydrazono group, a carbonyl group, a carbamyl group, a thiol group, an ester group, a carboxyl group, a sulfonic acid group, a phosphoric acid group, a C1 to C20 alkyl group, a C2 to C20 alkenyl group, a C2 to C20 alkynyl group, a C6 to C30 aryl group, a C3 to C30 heteroaryl group, a C7 to C30 arylalkyl group, a C1 to C30 alkoxy group, a C1 to C20 heteroalkyl group, a C3 to C20 heteroarylalkyl group, a C3 to C30 cycloalkyl group, a C3 to C15 cycloalkenyl group, a C6 to C15 cycloalkynyl group, a C3 to C30 heterocycloalkyl group, and a combination thereof.
  11. 11 . The thin film transistor of claim 1 , wherein the compound is represented by a structure among structures in Group 2: wherein, in Group 2, R 1a is hydrogen or a substituted or unsubstituted C1 to C30 alkyl group, Z 1 to Z 3 are independently N or CR a , provided that one of Z 1 to Z 3 is N, X 3 is one of O, S, Se, Te, NR b , or CR c R d , p and q are independently an integer of 1 to 30, and R p and R a to R d are independently one of hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C6 to C30 aryloxy group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen, a cyano group, or a combination thereof, and substituted refers to replacement of hydrogen of a group by a substituent selected from a halogen atom, a hydroxy group, a nitro group, a cyano group, an amino group, an azido group, an amidino group, a hydrazino group, a hydrazono group, a carbonyl group, a carbamyl group, a thiol group, an ester group, a carboxyl group, a sulfonic acid group, a phosphoric acid group, a C1 to C20 alkyl group, a C2 to C20 alkenyl group, a C2 to C20 alkynyl group, a C6 to C30 aryl group, a C3 to C30 heteroaryl group, a C7 to C30 arylalkyl group, a C1 to C30 alkoxy group, a C1 to C20 heteroalkyl group, a C3 to C20 heteroarylalkyl group, a C3 to C30 cycloalkyl group, a C3 to C15 cycloalkenyl group, a C6 to C15 cycloalkynyl group, a C3 to C30 heterocycloalkyl group, and a combination thereof.
  12. 12 . An electronic device comprising the thin film transistor of claim 1 .

Description

CROSS-REFERENCE TO RELATED APPLICATION This application is a divisional of U.S. application Ser. No. 16/546,842, filed Aug. 21, 2019, which claims priority to and the benefit of Korean Patent Application No. 10-2018-0101500 filed in the Korean Intellectual Property Office on Aug. 28, 2018, the entire contents of each of which are incorporated herein by reference. BACKGROUND 1. Field A compound, a thin film transistor, and an electronic device are disclosed. 2. Description of Related Art A flat panel display such as a liquid crystal display (LCD) or an organic light emitting diode (OLED) display includes a thin film transistor (TFT) that is a three-terminal element as a switch. Researches on an organic thin film transistor (OTFT) including an organic semiconductor such as a small molecular semiconductor or polymer semiconductor instead of an inorganic semiconductor such as a silicon (Si) semiconductor as one kind of the thin film transistor are being actively conducted. The organic thin film transistor may be made as a fiber or a film due to characteristics of an organic material, and thus is drawing attention as a core element for a flexible display device. The organic thin film transistor may be manufactured using a solution process such as inkjet printing, and may be easily applied to a large area flat panel display where a deposition process has a limit. SUMMARY An embodiment provides a compound applicable to an electronic device such as a thin film transistor. Another embodiment provides an organic thin film including the compound. Yet another embodiment provides a thin film transistor including the compound. Still another embodiment provides an electronic device including the thin film transistor. According to one embodiment, a compound represented by Chemical Formula 1A or 1B is provided. In Chemical Formulae 1A and 1B, X1 and X2 are different from each other and are independently one of O, S, Se, and Te,R1 to R4 are independently one of hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C6 to C30 aryloxy group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen, a cyano group, or a combination thereof, andn1 is an integer ranging from 1 to 4. In some embodiments, one of X1 and X2 may be Se or Te. In some embodiments, one of X1 and X2 may be S. In some embodiments, R1 and R2 may be different from each other. In some embodiments, one of R1 and R2 may be hydrogen and the other of R1 and R2 may be one of a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C6 to C30 aryloxy group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen, a cyano group, or a combination thereof. In some embodiments, one of R1 and R2 may be one of a substituted or unsubstituted C1 to C30 linear alkyl group, a substituted or unsubstituted C2 to C30 linear alkenyl group, a substituted or unsubstituted C2 to C30 linear alkynyl group, a substituted or unsubstituted C1 to C30 alkoxy group, or a combination thereof and the other of R1 and R2 may be one of a substituted or unsubstituted C1 to C30 branched alkyl group, a substituted or unsubstituted C2 to C30 branched alkenyl group, a substituted or unsubstituted C2 to C30 branched alkynyl group, or a combination thereof. In some embodiments, one of R1 and R2 may be one of a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C1 to C30 alkoxy group, or a combination thereof and the other of R1 and R2 may be one of a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C6 to C30 aryloxy group, a substituted or unsubstituted C3 to C30 heteroaryl group, or a combination thereof. In some embodiments, one of R1 and R2 may include a group represented by one of Chemical Formulae 2A to 2C. In Chemical Formulae 2A to 2C, Z1 to Z3 may independently be N or CRa,one of Z1 to Z3 may be N,X3 may be one of O, S, Se, Te, NRb, or CRcRd,m1 may be an integer ranging from 0 to 5,m2 may be an integer ranging from 0 to 3,R5, R6, and Ra to Rd may independently be one of hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C6 to C30 aryloxy gr