US-12628577-B2 - Method for preparing transition metal chalcogenide film and organometalic promoter and forming the same

US12628577B2US 12628577 B2US12628577 B2US 12628577B2US-12628577-B2

Abstract

Provided is a method for preparing a transition metal chalcogenide film, which includes: a step of injecting a precursor for preparing a transition metal chalcogenide and an organometallic promoter into a chamber equipped with a substrate; and a step of forming a transition metal chalcogenide film on the substrate through a chemical reaction between the precursor for preparing a transition metal chalcogenide and the organometallic promoter.

Inventors

Kibum Kang
Taesoo Kim

Assignees

KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Dates

Publication Date: 20260512
Application Date: 20230421
Priority Date: 20220426

Claims (14)

1 . A method for preparing a transition metal chalcogenide film, comprising: injecting a precursor for preparing a transition metal chalcogenide and an organometallic promoter into a chamber equipped with a substrate from outside the chamber; and forming the transition metal chalcogenide film on the substrate through a chemical reaction between the precursor for preparing the transition metal chalcogenide and the organometallic promoter in the chamber, wherein, prior to injecting the precursor, the chamber is controlled to maintain a temperature higher than a decomposition temperature of the precursor for preparing the transition metal chalcogenide and the organometallic promoter, thereby causing the injected precursor for preparing the transition metal chalcogenide and the organometallic promoter to decompose in a gas phase and react with each other within the chamber.
2 . The method for preparing the transition metal chalcogenide film of claim 1 , wherein the organometallic promoter is an alkali metal organic compound, and the organometallic promoter is decomposed at a temperature lower than a formation temperature of the transition metal chalcogenide film.
3 . The method for preparing the transition metal chalcogenide film of claim 2 , wherein oxygen is injected together with the organometallic promoter into the chamber at the same time.
4 . The method for preparing the transition metal chalcogenide film of claim 1 , wherein the organometallic promoter is pyrolyzed in the chamber.
5 . The method for preparing the transition metal chalcogenide film of claim 4 , wherein the organometallic promoter is pyrolyzed at a temperature lower than a growth temperature of the transition metal chalcogenide film.
6 . The method for preparing the transition metal chalcogenide film of claim 4 , wherein the pyrolyzed organometallic promoter reacts with the precursor for preparing the transition metal chalcogenide.
7 . The method for preparing the transition metal chalcogenide film of claim 3 , wherein the grain size or density of the transition metal chalcogenide film is determined by a flow rate of the organometallic promoter and the oxygen.
8 . The transition metal chalcogenide film prepared by the method of claim 1 .
9 . The transition metal chalcogenide film of claim 8 , wherein the transition metal chalcogenide film comprises the transition metal chalcogenide film formed from an intermediate formed from the chemical reaction between the organometallic promoter and a metal of the transition metal chalcogenide film.
10 . The transition metal chalcogenide film of claim 9 , wherein a grain size or density of the transition metal chalcogenide film is determined by an amount of the formed intermediate.
11 . The transition metal chalcogenide film of claim 8 , wherein the transition metal chalcogenide film is carbon-free.
12 . The method for preparing the transition metal chalcogenide film of claim 2 , wherein the organometallic promoter is a sodium propionate.
13 . An organometallic promoter for preparing a transition metal chalcogenide film, wherein the organometallic promoter is an alkali metal organic compound and the alkali metal organic compound is decomposed at a temperature lower than a formation temperature of the transition metal chalcogenide film.
14 . The organometallic promoter for preparing a transition metal chalcogenide film of claim 13 , wherein the alkali metal organic compound is a sodium propionate.

Description

CROSS-REFERENCE TO RELATED APPLICATION This application claims priority of Korean Patent Application No. 10-2022-0051290, filed on Apr. 26, 2022, in the KIPO (Korean Intellectual Property Office), the disclosure of which is incorporated herein entirely by reference. BACKGROUND OF THE INVENTION Field of the Invention The present disclosure relates to a method for preparing a transition metal chalcogenide film and a promoter for the same, more particularly to a method for preparing a transition metal chalcogenide film, which can decrease the grain density of a transition metal chalcogenide without using solid powder, etc., and a promoter for the same. Description of the Related Art A grain boundary is formed at the interface between two grains of a material. Because the grain boundary functions as a scattering factor which hinders the movement of electrons, it worsens the electrical and optical properties of devices or the mechanical property of materials. Therefore, it is important to decrease the density of the grain boundary in a material. For transition metal chalcogenides which are recognized as new materials for electronic devices such as semiconductors, a method of adding a promoter in the form of solid powder during the growth of the transition metal chalcogenide is being researched a lot to reduce the grain boundary density. However, because solid powder precursors have low vapor pressure, the precursor should be located inside a chamber of high temperature for evaporation, and this results in the following problems. 1) It is difficult to control the temperatures of the chamber and the precursor independently.2) The amount of the solid powder changes continuously with time. It is difficult to ensure reproducibility because the amount of the evaporated precursor changes depending on time and the amount of the remaining powder.3) The concentration gradient of the precursor is large depending on the location on the substrate.4) It is difficult to precisely control the amount of the solid powder precursor (The surface area, etc. of the powder are changed). Accordingly, a new technology that can reduce the grain size of the transition metal chalcogenide film without using solid powder is necessary. SUMMARY OF THE INVENTION The present disclosure is directed to providing a new method for preparing a transition metal chalcogenide film, which can decrease the grain density of a transition metal chalcogenide, and application thereof. The present disclosure provides a method for preparing a transition metal chalcogenide film, which includes: a step of injecting a precursor for preparing a transition metal chalcogenide and an organometallic promoter into a chamber equipped with a substrate; and a step of forming a transition metal chalcogenide film on the substrate through a chemical reaction between the precursor for preparing a transition metal chalcogenide and the organometallic promoter. In an exemplary embodiment of the present disclosure, the organometallic promoter is sodium propionate and oxygen is injected together with the organometallic promoter into the chamber at the same time. In an exemplary embodiment of the present disclosure, the organometallic promoter is pyrolyzed in the chamber. The organometallic promoter is pyrolyzed at a temperature lower than the growth temperature of the transition metal chalcogenide film. In an exemplary embodiment of the present disclosure, the pyrolyzed organometallic promoter reacts with the precursor for preparing a transition metal chalcogenide, and the grain size or density of the transition metal chalcogenide film is determined by the flow rate of the organometallic promoter and the oxygen. The present disclosure also provides an organometallic promoter for preparing a transition metal chalcogenide film, wherein the organometallic promoter is sodium propionate. The present disclosure also provides a transition metal chalcogenide film prepared by the method described above. In an exemplary embodiment of the present disclosure, the transition metal chalcogenide film includes a transition metal chalcogenide film formed from an intermediate formed from a chemical reaction between an organometallic promoter and the metal of the transition metal chalcogenide film. In an exemplary embodiment of the present disclosure, the transition metal chalcogenide film is substantially carbon-free. The grain size or density of the transition metal chalcogenide film is determined by the amount of the formed intermediate. The present disclosure also provides a semiconductor device including the transition metal chalcogenide film. According to the present disclosure, the grain density of a transition metal chalcogenide is decreased by injecting an organometallic promoter from outside of a chamber instead of evaporating a solid powder promoter inside a chamber. Through this, a transition metal chalcogenide film with improved electrical and optical properties can be achieved. BRIEF DES