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US-12628598-B2 - Method of manufacturing semiconductor device

US12628598B2US 12628598 B2US12628598 B2US 12628598B2US-12628598-B2

Abstract

A method of manufacturing a semiconductor device according to an embodiment includes: the method of manufacturing a semiconductor device from a substrate and a sheet, the substrate including a semiconductor substrate including a first part including a first surface and a second surface provided on the opposite side of the first surface, and an annular second part surrounding the second surface and protruding from the second surface in a direction perpendicular to the second surface, and a first conductive film provided in contact with a top surface and an inner side surface of the second part, and the second surface, the sheet being attached to the first conductive film provided in contact with the top surface and the inner side surface of the second part, and the second surface; the method comprising: separating the second part from the first part by pressing a polishing tape against the first surface provided on the opposite side of the second part and polishing the semiconductor substrate; and cutting the first conductive film between the first part and the separated second part by pressing the polishing tape against the first conductive film between the first part and the separated second part.

Inventors

  • Takeyuki Suzuki

Assignees

  • KABUSHIKI KAISHA TOSHIBA
  • TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

Dates

Publication Date
20260512
Application Date
20230823
Priority Date
20230322

Claims (11)

  1. 1 . A method of manufacturing a semiconductor device from a substrate and a sheet, the substrate including a semiconductor substrate including a first part including a first surface and a second surface provided on the opposite side of the first surface, and an annular second part surrounding the second surface and protruding from the second surface in a direction perpendicular to the second surface, and a first conductive film provided in contact with a top surface and an inner side surface of the second part, and the second surface, the sheet being attached to the first conductive film provided in contact with the top surface and the inner side surface of the second part, and the second surface; the method comprising: separating the second part from the first part by pressing a polishing tape against the first surface provided on the opposite side of the second part and polishing the semiconductor substrate; and cutting the first conductive film between the first part and the separated second part by pressing the polishing tape against the first conductive film between the first part and the separated second part.
  2. 2 . The method of manufacturing the semiconductor device according to claim 1 , wherein the substrate further includes a second conductive film provided in contact with the first surface, and in the separating step, the second conductive film is polished.
  3. 3 . The method of manufacturing the semiconductor device according to claim 1 , wherein in the cutting step, an upper surface of the sheet is exposed.
  4. 4 . The method of manufacturing the semiconductor device according to claim 1 , wherein the semiconductor substrate further includes a protective film provided on the first surface, and the method further comprising: polishing the protective film provided on the first surface provided on the opposite side of the second part, before the separating step.
  5. 5 . The method of manufacturing the semiconductor device according to claim 1 , further comprising: peeling off the second part from the sheet after the cutting step.
  6. 6 . The method of manufacturing the semiconductor device according to claim 1 , wherein the first conductive film includes a third conductive film having a thickness of 5 μm or more and the third conductive film includes Ni (nickel), and a fourth conductive film provided between the third conductive film and the second surface and the fourth conductive film includes Al (aluminum).
  7. 7 . A method of manufacturing a semiconductor device from a substrate and a sheet, the substrate including a semiconductor substrate including a first part including a first surface and a second surface provided on the opposite side of the first surface, and an annular second part surrounding the second surface and protruding from the second surface in a direction perpendicular to the second surface, and a first conductive film provided in contact with a top surface and an inner side surface of the second part, and the second surface, the sheet being attached to the first conductive film provided in contact with the top surface and the inner side surface of the second part, and the second surface; the method comprising: separating the second part from the first part and exposing an upper surface of the first conductive film by pressing a polishing tape against the first surface provided on the opposite side of the second part and polishing the semiconductor substrate; and cutting the first conductive film between the first part and the second part by performing the blade dicing from the upper surface of the exposed first conductive film.
  8. 8 . The method of manufacturing the semiconductor device according to claim 7 , wherein the substrate further includes a second conductive film provided in contact with the first surface, and in the separating step, the second conductive film is polished.
  9. 9 . The method of manufacturing the semiconductor device according to claim 7 , wherein the semiconductor substrate further includes a protective film provided on the first surface, and the method further comprising: polishing the protective film provided on the first surface provided on the opposite side of the second part, before the separating step.
  10. 10 . The method of manufacturing the semiconductor device according to claim 7 , further comprising: peeling off the second part from the sheet after the cutting step.
  11. 11 . The method of manufacturing the semiconductor device according to claim 7 , wherein the first conductive film includes a third conductive film having a thickness of 5 μm or more and the third conductive film includes Ni (nickel), and a fourth conductive film provided between the third conductive film and the second surface and the fourth conductive film includes Al (aluminum).

Description

CROSS-REFERENCE TO RELATED APPLICATION This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2023-044971, filed on Mar. 22, 2023, the entire contents of which are incorporated herein by reference. FIELD Embodiments described herein relate generally to a method for manufacturing a semiconductor device. BACKGROUND Semiconductor devices such as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) are used in applications for power conversion. The semiconductor chip including the MOSFET is obtained by dicing the semiconductor substrate on which the MOSFET is formed. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic cross-sectional view of a substrate according to a first embodiment. FIG. 2 is a schematic bottom view of a semiconductor substrate according to the first embodiment. FIG. 3 is a schematic cross-sectional view illustrating a method of manufacturing the semiconductor device according to the first embodiment. FIG. 4 is a schematic cross-sectional view illustrating the method of manufacturing the semiconductor device according to the first embodiment. FIG. 5 is a schematic cross-sectional view illustrating the method of manufacturing the semiconductor device according to the first embodiment. FIG. 6 is a schematic cross-sectional view illustrating the method of manufacturing the semiconductor device according to the first embodiment. FIG. 7 is a schematic cross-sectional view illustrating the method of manufacturing the semiconductor device according to the first embodiment. FIG. 8 is a schematic cross-sectional view illustrating the method of manufacturing the semiconductor device according to the first embodiment. FIG. 9 is a flow chart illustrating the method of manufacturing the semiconductor device according to the first embodiment. FIG. 10 is a schematic cross-sectional view for explaining the operation and advantages of the semiconductor device according to the first embodiment. FIG. 11 is a schematic cross-sectional view illustrating the method of manufacturing the semiconductor device according to the second embodiment. FIG. 12 is a schematic cross-sectional view illustrating the method of manufacturing the semiconductor device according to the second embodiment. FIG. 13 is a flow chart illustrating the method of manufacturing the semiconductor device according to the second embodiment. DETAILED DESCRIPTION A method of manufacturing a semiconductor device according to an embodiment includes: the method of manufacturing a semiconductor device from a substrate and a sheet, the substrate including a semiconductor substrate including a first part including a first surface and a second surface provided on the opposite side of the first surface, and an annular second part surrounding the second surface and protruding from the second surface in a direction perpendicular to the second surface, and a first conductive film provided in contact with a top surface and an inner side surface of the second part, and the second surface, the sheet being attached to the first conductive film provided in contact with the top surface and the inner side surface of the second part, and the second surface; the method comprising: separating the second part from the first part by pressing a polishing tape against the first surface provided on the opposite side of the second part and polishing the semiconductor substrate; and cutting the first conductive film between the first part and the separated second part by pressing the polishing tape against the first conductive film between the first part and the separated second part. Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. Note that in the following description, the same members and the like are denoted by the same reference numerals, and description of members and the like once described is appropriately omitted. In this specification, in order to illustrate the positional relationship of parts and the like, the upward direction of the drawings may be referred to as “upper”, and the downward direction of the drawings may be referred to as “lower”. Here, the terms “up” and “down” do not necessarily indicate a relationship with the direction of gravity. First Embodiment A method of manufacturing a semiconductor device according to the present embodiment includes: the method of manufacturing a semiconductor device from a substrate and a sheet, the substrate including a semiconductor substrate including a first part including a first surface and a second surface provided on the opposite side of the first surface, and an annular second part surrounding the second surface and protruding from the second surface in a direction perpendicular to the second surface, and a first conductive film provided in contact with a top surface and an inner side surface of the second part, and the second surface, the sheet being attached to the first conductive film provided in