Search

US-12628647-B2 - Semiconductor package having heat emitting post bonded thereto and method of manufacturing the same

US12628647B2US 12628647 B2US12628647 B2US 12628647B2US-12628647-B2

Abstract

The present invention relates to a semiconductor package having a heat emitting post bonded thereto and a method of manufacturing the same, and more particularly, to a semiconductor package having a heat emitting post bonded thereto and a method of manufacturing the same that may increase bond strength of the heat emitting post and improve durability of bonding members contacting cooling water.

Inventors

  • Yun hwa CHOI

Assignees

  • JMJ KOREA CO., LTD.

Dates

Publication Date
20260512
Application Date
20230829
Priority Date
20230303

Claims (20)

  1. 1 . A semiconductor package having heat emitting posts bonded thereto comprising: a lower insulating substrate comprising a lower insulating layer, a metal pattern layer formed on an upper surface of the lower insulating layer, and a heat emitting metal layer formed on a lower surface of the lower insulating layer; at least one semiconductor chip which is bonded on the metal pattern layer, wherein an electrical connecting member is bonded to the at least one semiconductor chip; a package housing covering the at least one semiconductor chip and partially or entirely covering the metal pattern layer; at least one terminal having a first end electrically connected to the metal pattern layer and a second end exposed to an outside of the package housing; and a plurality of heat emitting posts bonded to a lower surface of the heat emitting metal layer and exposed to a lower surface of the package housing, wherein a plurality of bonding members are interposed between the lower surface of the heat emitting metal layer and the plurality of heat emitting posts, respectively, wherein a horizontal width of an upper end of each bonding member is greater than a horizontal width of a lower end of each bonding member, and a side surface of each bonding member is plated with a plating layer.
  2. 2 . The semiconductor package of claim 1 , wherein a metal bonding layer having a thickness smaller than that of the metal pattern layer or the heat emitting metal layer is interposed between the lower insulating layer and the metal pattern layer and between the lower insulating layer and the heat emitting metal layer.
  3. 3 . The semiconductor package of claim 1 , wherein the bonding members are formed of a material comprising any one of Sn, Ag, Au, Cu, Ti, Ni, Pd, and ceramic or a composite material containing 30% or more of any one thereof.
  4. 4 . The semiconductor package of claim 1 , wherein a thickness of the bonding members are 10 μm through 5 mm.
  5. 5 . The semiconductor package of claim 1 , wherein a thickness of the plating layer is 1 μm through 20 μm.
  6. 6 . The semiconductor package of claim 1 , wherein the bonding members are formed of a material having a melting point of 100° C. through 250° C.
  7. 7 . The semiconductor package of claim 1 , wherein a shear strength of the bonding members is 5 kgf through 100 kgf.
  8. 8 . The semiconductor package of claim 1 , wherein the heat emitting posts have a cylindrical shape, a cuboid shape, or a cubical shape.
  9. 9 . The semiconductor package of claim 1 , wherein a main metal forming the heat emitting posts is Cu having purity of above 70% or an alloy containing Cu.
  10. 10 . The semiconductor package of claim 1 , wherein a main metal forming the heat emitting posts is Al having purity of above 50% or an alloy containing Al.
  11. 11 . The semiconductor package of claim 1 , wherein the heat emitting metal layer comprises a metal plating layer containing 70% or more of Ni on the surface thereof.
  12. 12 . The semiconductor package of claim 1 , wherein the metal pattern layer and the heat emitting metal layer comprise Cu or Al.
  13. 13 . The semiconductor package of claim 1 , wherein an angel between the side surface of each bonding member and the lower surface of the heat emitting metal layer is 3° through 85°.
  14. 14 . The semiconductor package of claim 1 , wherein the package housing is formed of a composite material containing epoxy.
  15. 15 . The semiconductor package of claim 1 , wherein the at least one semiconductor chip is a semiconductor device comprising any one of MOSFET, IGBT, a GaN device, a SiC device, and a Ga device.
  16. 16 . The semiconductor package of claim 1 , further comprising a cooling system bonded to the lower insulating substrate and wherein the heat emitting posts directly contact cooling water that circulates an inside of the cooling system.
  17. 17 . The semiconductor package of claim 1 , wherein the electrical connecting member is a wire, a metal clip formed of a bent metal plate, or a metal spacer.
  18. 18 . The semiconductor package of claim 1 , wherein the heat emitting metal layer and the heat emitting posts are formed of a same material.
  19. 19 . The semiconductor package of claim 1 , wherein the lower insulating layer is formed of a single material comprising any one of Al 2 O 3 , AlN, and Si 3 N 4 or a composite material containing at least any one thereof.
  20. 20 . A method of manufacturing a semiconductor package having heat emitting posts bonded thereto comprising: preparing a lower insulating substrate comprising a lower insulating layer, a metal pattern layer formed on an upper surface of the lower insulating layer, and a heat emitting metal layer formed on a lower surface of the lower insulating layer; bonding at least one semiconductor chip onto the metal pattern layer and bonding an electrical connecting member to the at least one semiconductor chip; connecting at least one terminal to the metal pattern layer; forming a package housing partially covering the at least one terminal, covering the at least one semiconductor chip, and partially or entirely covering the metal pattern layer; and bonding a plurality of heat emitting posts to a lower surface of the heat emitting metal layer, the heat emitting posts being exposed to a lower surface of the package housing, wherein a plurality of bonding members are interposed between the lower surface of the heat emitting metal layer and the plurality of heat emitting posts, respectively, wherein a horizontal width of an upper end of each bonding member is greater than a horizontal width of a lower end of each bonding member, and a side surface of each bonding member is plated a plating layer.

Description

CROSS-REFERENCE TO RELATED PATENT APPLICATION This application claims the benefit of Korean Patent Application No. 10-2023-0028163, filed on Mar. 3, 2023, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor package having a heat emitting post bonded thereto and a method of manufacturing the same, and more particularly, to a semiconductor package having a heat emitting post bonded thereto and a method of manufacturing the same that may increase bond strength of the heat emitting post and improve durability of bonding members contacting cooling water. 2. Description of the Related Art As well known, electrical and electronic components, in particular, semiconductor components generate excessive heat while driving so that heat sink may be formed or a cooling system may be applied to prevent overheat and to maintain driving performance. Especially, semiconductor components applied to a high power application field may efficiently prevent overheat by using a cooling system that circulates a coolant. In such cooling system, posts contacting the circulating coolant are inserted and heat transmitted from semiconductor components to the posts is cooled. Generally, posts are bonded to a substrate by using a bonding member containing Ag or Cu interposed therebetween by soldering, sintering, or brazing. However, as the bonding member contacts a coolant of a cooling system, the bonding member is oxidized or corroded and thereby, deteriorated. Accordingly, bond strength between the bonding member and posts may be lowered. In this regard, there is a demand for technology that may increase bond strength of the heat emitting posts and improve durability of a bonding member contacting cooling water and heat emitting efficiency. SUMMARY OF THE INVENTION The present invention provides a semiconductor package having a heat emitting post bonded thereto and a method of manufacturing the same that may increase bond strength of the heat emitting post and improve durability of bonding members contacting cooling water. According to an aspect of the present invention, there is provided a semiconductor package having a heat emitting post bonded thereto including: one or more insulating substrates including one or more insulating layers; one or more metal pattern layers formed on one sides of the insulating layers; one or more heat emitting metal layers formed on the other sides of the insulating layers; one or more semiconductor chips which are bonded on the metal pattern layers and include one or more electrical connecting members bonded thereto; a package housing covering cover one or more semiconductor chips and partially or entirely covering the metal pattern layers; one or more terminals including one end electrically or structurally connected to the insulating substrate and the other end exposed to the outside of the package housing; and one or more heat emitting posts bonded to the heat emitting metal layers by using bonding members interposed therebetween and exposed to the lower surface, the upper surface, or lower and upper surfaces of the package housing, wherein a horizontal bonding distance between one side of the bonding member and the heat emitting metal layer is greater than a horizontal bonding distance between the other side of the bonding member and the heat emitting post, and the side surface of the bonding member is partially plated with one or more metal layers or entirely includes the plating layer. Here, a metal bonding layer having a thickness smaller than that of the metal pattern layer or the heat emitting metal layer may be interposed between the insulating layer and the metal pattern layer and between the insulating layer and the heat emitting metal layer. The bonding member may be formed of a material comprising any one of Sn, Ag, Au, Cu, Ti, Ni, Pd, and ceramic or a composite material containing 30% or more of any one thereof. A thickness of the bonding member may be 10 μm through 5 mm. A thickness of the plating layer may be 1 μm through 20 μm. The bonding member may be formed of a material having a melting point of 100° C. through 250° C. Shear strength of the bonding member may be 5 kgf through 100 kgf. The heat emitting posts may have a cylindrical shape, a cuboid shape, or a cubical shape. A main metal forming the heat emitting post may be Cu having purity of above 70% or an alloy containing Cu. A main metal forming the heat emitting post may be Al having purity of above 50% or an alloy containing Al. The heat emitting metal layer may include a metal plating layer containing 70% or more of Ni on the surface thereof. The metal plating layer may be an electroless plating layer or an electrolyte plating layer. The metal pattern layers and the heat emitting metal layers may include Cu or Al. The side of the bonding member may be bonded