US-12628664-B2 - Metal component

US12628664B2US 12628664 B2US12628664 B2US 12628664B2US-12628664-B2

Abstract

Provided is a metal component that is used for manufacturing a semiconductor device, the metal component including a substrate having a conductivity; and a noble metal plating layer formed on all or part of a surface of the substrate, wherein the noble metal plating layer has a lumpy protrusion on a surface of the noble metal plating layer.

Inventors

Kimihiko KUBO
Ryota FURUNO
Tomokatsu KUNITAKE

Assignees

MITSUI HIGH-TEC, INC.

Dates

Publication Date: 20260512
Application Date: 20240108
Priority Date: 20230118

Claims (3)

1 . A metal component that is used for manufacturing a semiconductor device, the metal component comprising: a substrate having a conductivity; and a noble metal plating layer formed on all or part of a surface of the substrate, wherein the noble metal plating layer has a lumpy protrusion on a surface of the noble metal plating layer, the noble metal plating layer contains Ag as a main component, and a ratio of crystal orientation <111> to crystal orientation <001> is 2 or more in the noble metal plating layer.
2 . The metal component according to claim 1 , wherein the surface of the noble metal plating layer is covered with a plurality of the lumpy protrusions.
3 . The metal component according to claim 2 , wherein the surface of the noble metal plating layer has an arithmetic mean curvature of peak (Spc) of less than 10,000 mm −1 .

Description

CROSS-REFERENCE TO RELATED APPLICATION This application is based on Japanese Patent Application No. 2023-005696 filed with the Japan Patent Office on Jan. 18, 2023, the entire content of which is hereby incorporated by reference. BACKGROUND 1. Technical Field The present disclosure relates to a metal component. 2. Related Art Conventionally, a technique for forming a noble metal plating layer on the metal component such as a lead frame used for manufacturing a semiconductor device has been known. This plating layer is formed on a part or all of a surface of a metal substrate of the metal component. Among them, the metal component having an Ag plating layer formed on a part of the metal substrate mainly made of Cu is widely employed in the semiconductor device that requires reliability because of high heat dissipation and conductivity (see JP-A-05-003277). A semiconductor device includes a semiconductor element, a metal component, and the like sealed with a resin. Therefore, there is an interface between the metal and the resin. The metal and the resin have very different coefficients of thermal expansion. Therefore, stress increases at the interface between the metal and the resin due to heat generated during mounting or driving. Then, adhesive strength between such a sealing resin and the plating layer may be reduced. Thus, there is a possibility that peeling may occur between the sealing resin and the plating layer. In such a case, reliability of the semiconductor device is reduced. One aspect of the present embodiment has been made in view of the above problems. That is, an object of the present disclosure is to provide a metal component capable of improving the reliability of the semiconductor device in a high temperature environment. SUMMARY A metal component according to an embodiment of the present disclosure is used for manufacturing a semiconductor device, the metal component including a substrate having a conductivity; and a noble metal plating layer formed on all or part of a surface of the substrate, wherein the noble metal plating layer has a lumpy protrusion on a surface of the noble metal plating layer. BRIEF DESCRIPTION OF DRAWINGS FIG. 1A is a schematic diagram of a lead frame used in the present embodiment; FIG. 1B is a cross-sectional view illustrating a semiconductor device used in the present embodiment; FIG. 2A is an enlarged cross-sectional view of the lead frame used in the present embodiment; FIG. 2B is a diagram for explaining a test sample used in a shear strength test; FIG. 3A is a diagram illustrating shear strengths of lead frames of Comparative Examples 1 and 2, and Example in a room temperature environment; FIG. 3B is a diagram illustrating the shear strengths of the lead frames of Comparative Examples 1 and 2, and Example in a high temperature environment; FIG. 4 is a diagram illustrating a surface morphology and a cross-sectional morphology of a plating layer formed on the lead frame of Example before heat treatment, and the surface morphology and the cross-sectional morphology after heat treatment; FIG. 5 is a diagram illustrating a variation in the shear strength due to a thermal history of the lead frame of Example; FIG. 6A is a diagram illustrating a variation in the shear strength in the room temperature environment due to the thermal history of the lead frame of Comparative Example 3; FIG. 6B is a diagram illustrating a variation in the shear strength in the high temperature environment due to the thermal history of the lead frame of Comparative Example 3; FIG. 7A is a diagram illustrating a variation in the shear strength in the room temperature environment due to the thermal history of the lead frame of Example; and FIG. 7B is a diagram illustrating a variation in the shear strength in the high temperature environment due to the thermal history of the lead frame of Example. DETAILED DESCRIPTION In the following detailed description, for purpose of explanation, numerous specific details are set forth in order to provide a thorough understanding of the disclosed embodiments. It will be apparent, however, that one or more embodiments may be practiced without these specific details. In other instances, well-known structures and devices are schematically shown in order to simplify the drawing. A metal component according to an embodiment of the present disclosure is configured to be used for manufacturing a semiconductor device. This metal component includes a substrate having a conductivity, and a noble metal plating layer formed on all or part of a surface of the substrate. The noble metal plating layer has a lumpy protrusion on a surface of the noble metal plating layer. According to one aspect of the present embodiment, the reliability of the semiconductor device in the high temperature environment is improved. Hereinafter, a lead frame will be described as an example of the metal component according to the present embodiment used for manufacturing the semiconductor