US-12628666-B2 - Semiconductor device with metal connector having notch

US12628666B2US 12628666 B2US12628666 B2US 12628666B2US-12628666-B2

Abstract

A semiconductor device according to an embodiment includes a metal frame separated from a semiconductor chip, and a metal connector connected to the semiconductor chip via a first bonding material on an electrode of the semiconductor chip, and connected to the metal frame via a second bonding material on a disposition surface of the metal frame. The metal connector includes: a first part connected to the first bonding material and serving as a first end; a second part connected to the first part and rising toward the metal frame; a third part connected to the second part and serving as a second end; and a notch that opens on a second-end-side surface formed on the third part, adjacent to a connecting surface connected to the second bonding material, and opposed to a tilted surface of the metal frame adjacent to and tilted with respect to the disposition surface.

Inventors

Kakeru YAMAGUCHI

Assignees

KABUSHIKI KAISHA TOSHIBA
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

Dates

Publication Date: 20260512
Application Date: 20230713
Priority Date: 20220729

Claims (5)

1 . A semiconductor device comprising: a semiconductor chip having an electrode; a first bonding material provided on the electrode of the semiconductor chip; a metal frame disposed to be separated from the semiconductor chip; a second bonding material provided on the metal frame; and a metal connector connected to the semiconductor chip via the first bonding material and connected to the metal frame via the second bonding material, wherein the metal frame comprises: a disposition surface on which the second bonding material is disposed; and a tilted surface adjacent to the disposition surface and tilted by a predetermined angle with respect to the disposition surface, the metal connector comprises: a first part connected to the first bonding material and serving as a first end; a second part integrally connected to the first part and formed so as to rise toward the metal frame; a third part integrally connected to the second part and serving as a second end; a connecting surface formed in the third part and connected to the second bonding material; a second-end-side surface formed on the third part, adjacent to the connecting surface, and opposed to the tilted surface of the metal frame; and a notch that opens on the second-end-side surface and penetrates through the third part in a thickness direction, a direction orthogonal to a direction in which the tilted surface of the metal frame and the second-end-side surface of the metal connector are opposed to each other and to the thickness direction is a width direction of the metal connector, and the metal connector is set such that a length of the third part in the width direction is longer than a length of the first part in the width direction, and a weight of the third part is larger than a weight of the first part.
2 . The semiconductor device according to claim 1 , wherein, in the direction in which the tilted surface of the metal frame and the second-end-side surface of the metal connector are opposed to each other, a length of the notch of the metal connector is longer than a distance between the tilted surface of the metal frame and the second-end-side surface of the metal connector.
3 . The semiconductor device according to claim 1 , wherein the electrode is a gate electrode, and the metal connector is a gate connector.
4 . The semiconductor device according to claim 1 , wherein the notch is rectangular, semicircular, or V-shaped in the metal connector in a planar view.
5 . A semiconductor device comprising: a semiconductor chip having an electrode; a first bonding material provided on the electrode of the semiconductor chip; a metal frame disposed to be separated from the semiconductor chip; a second bonding material provided on the metal frame; and a metal connector connected to the semiconductor chip via the first bonding material and connected to the metal frame via the second bonding material, wherein the metal frame comprises: a disposition surface on which the second bonding material is disposed; and a tilted surface adjacent to the disposition surface and tilted by a predetermined angle with respect to the disposition surface, the metal connector comprises: a first part connected to the first bonding material and serving as a first end; a second part integrally connected to the first part and formed so as to rise toward the metal frame; a third part integrally connected to the second part and serving as a second end; a connecting surface formed in the third part and connected to the second bonding material; a second-end-side surface formed on the third part, adjacent to the connecting surface, and opposed to the tilted surface of the metal frame; and a notch that opens on the second-end-side surface and penetrates through the third part in a thickness direction, and in a direction in which the tilted surface of the metal frame and the second-end-side surface of the metal connector are opposed to each other, a length of the notch of the metal connector is longer than a distance between the tilted surface of the metal frame and the second-end-side surface of the metal connector.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2022-121828, filed on Jul. 29, 2022; the entire contents of which are incorporated herein by reference. FIELD Embodiments described herein relate generally to a semiconductor device. BACKGROUND Conventionally, for a semiconductor package manufactured by bonding a Si semiconductor chip or the like with a lead frame formed of copper or the like and various connectors including a gate connector by using a bonding material such as solder and then carrying out mold-sealing with resin, a reflow furnace which heats and bonds the solder in a bonding process is used. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view illustrating a semiconductor device of the present embodiment; FIG. 2 is a cross-sectional view illustrating the semiconductor device of the present embodiment; FIG. 3 is a plan view illustrating the semiconductor device of the present embodiment; FIG. 4 is a plan view describing semicircular notches formed in a third part of a metal connector; FIG. 5 is a plan view describing V-shaped notches formed in the third part of the metal connector; and FIG. 6 is a cross-sectional view describing insufficient bonding between a metal connector and a semiconductor chip caused by the Manhattan phenomenon in a case in which the metal connector is not provided with notches. DETAILED DESCRIPTION According to an embodiment, A semiconductor device includes a semiconductor chip, a first bonding material, a metal frame, a second bonding material, and a metal connector. The semiconductor chip has an electrode. The first bonding material is provided on the electrode of the semiconductor chip. The metal frame is disposed to be separated from the semiconductor chip. The second bonding material is provided on the metal frame. The metal connector is connected to the semiconductor chip via the first bonding material and connected to the metal frame via the second bonding material. The metal frame includes a disposition surface and a tilted surface. The second bonding material is disposed on the disposition surface. The tilted surface is adjacent to the disposition surface and tilted by a predetermined angle with respect to the disposition surface. The metal connector includes a first part, a second part, a third part, a connecting surface, a second-end-side surface, and a notch. The first part is connected to the first bonding material and serves as a first end. The second part is integrally connected to the first part and formed so as to rise toward the metal frame. The third part is integrally connected to the second part and serves as a second end. The connecting surface is formed in the third part and connected to the second bonding material. The second-end-side surface is formed on the third part, adjacent to the connecting surface, and opposed to the tilted surface of the metal frame. The notch opens on the second-end-side surface and penetrates through the third part in a thickness direction. An outline of a semiconductor device 1 of the present embodiment will be described with reference to FIG. 1 to FIG. 3. The semiconductor device 1 is provided with: a first lead frame 10, a second lead frame 12, a metal frame 30 which is a third lead frame, a source connector 40 which is a first electrically-conductive member, a metal connector 5 which is a second electrically-conductive member, a semiconductor chip 14 provided with a plurality of electrodes, and a sealing material 19 which protects the semiconductor chip 14. In FIG. 1 to FIG. 3, in order to facilitate understanding of the internal structure of the semiconductor device 1, the sealing material 19 is illustrated by a dashed-two-dotted line. Hereinafter, parts of the semiconductor device 1 will be described in detail. In the following description, an X-axis/Y-axis/Z-axis orthogonal coordinate system is used. An X-axis direction includes a +X direction and a −X direction. A Y-axis direction includes a +Y direction and a −Y direction. A Z-axis direction includes a +Z direction and a −Z direction. As illustrated in FIG. 1 to FIG. 3, the direction from a main-body portion 101 of the first lead frame 10 toward the semiconductor chip 14 is assumed to be an upward direction (+Z direction). The opposite direction of the upward direction is assumed to be a downward direction (−Z direction). The direction from the metal connector 5 toward the metal frame 30 in the X-axis/Y-axis plane (horizontal plane) is assumed to be the +X direction, and the opposite direction of the +X direction is assumed to be the −X direction. The direction from the second lead frame 12 toward the metal frame 30 is assumed to be the +Y direction, and the opposite direction of the +Y direction is assumed to be the −Y direction. The semiconductor chip 14, which is illustrated in FIG. 1 to FIG. 3 and has a rectangular plate shape in a planar view, is a Meta