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US-12628669-B2 - Through glass via with a metal wall

US12628669B2US 12628669 B2US12628669 B2US 12628669B2US-12628669-B2

Abstract

Embodiments described herein may be related to apparatuses, processes, and techniques related to glass layers within a package that include one or more high aspect ratio TGV that are filled with conductive material. The TGV extends from a first side of the glass layer to a second side of the glass layer opposite the first side and are filled with conductive material to provide a high-quality electrical connection between the first side of the glass layer and the second side of the glass layer, where a portion of the wall of the TGV includes titanium. Other embodiments may be described and/or claimed.

Inventors

  • Darko Grujicic
  • Sashi S. KANDANUR
  • Helme A. CASTRO DE LA TORRE
  • Srinivas V. Pietambaram
  • Marcel WALL
  • Suddhasattwa NAD
  • Rengarajan SHANMUGAM
  • Benjamin DUONG

Assignees

  • INTEL CORPORATION

Dates

Publication Date
20260512
Application Date
20210921

Claims (20)

  1. 1 . An apparatus comprising: a glass layer with a first side and a second side opposite the first side; a through glass via (TGV) that extends from the first side of the glass layer to the second side of the glass layer; a conductive material inside the TGV to electrically couple the first side of the glass layer with the second side of the glass layer; and a layer of metal within the TGV and proximate to the first side of the glass layer between a portion of the conductive material and a wall of the TGV, the layer of metal on a first portion of the TGV at the first side of the glass layer but not on the first side of the glass layer and not on a second portion of the TGV at the second side of the glass layer.
  2. 2 . The apparatus of claim 1 , wherein the TGV has a diameter at the first side of the glass layer, and wherein the TGV has a length from the first side of the glass layer to the second side of the glass layer; and wherein a ratio of the length of the TGV to the diameter of the TGV is greater than or equal to 8.
  3. 3 . The apparatus of claim 1 , wherein a shape of the TGV at the first side of the glass layer is a selected one of: a circle, an ellipse, or a rectangle.
  4. 4 . The apparatus of claim 1 , wherein the TGV is a plurality of TGV.
  5. 5 . The apparatus of claim 4 , wherein a pitch of the plurality of TGV ranges from 25 μm to 200 μm.
  6. 6 . The apparatus of claim 1 , wherein a thickness of the glass layer is greater than or equal to 100 μm.
  7. 7 . The apparatus of claim 1 , further comprising a redistribution layer (RDL) coupled with the first side of the glass layer or coupled with the second side of the glass layer, and electrically coupled with the conductive material inside the TGV.
  8. 8 . The apparatus of claim 1 , wherein the conductive material includes copper or a copper alloy, and the layer of metal includes titanium.
  9. 9 . A method comprising: providing a glass layer having a first side and a second side opposite the first side; forming a glass via (TGV) in the glass layer that extends from the first side of the glass layer to the second side of the glass layer; forming a layer that includes titanium on a portion of a wall of the TGV proximate to the first side of the glass layer, the layer on a first portion of the TGV at the first side of the glass layer but not on the first side of the glass layer and not on a second portion of the TGV at the second side of the glass layer; and filling the TGV with conductive material.
  10. 10 . The method of claim 9 , wherein forming a titanium layer on a wall of the TGV proximate to the first side of the glass layer further includes: placing a filler material within the TGV, a top of the filler material below the first side of the glass layer; depositing the layer that includes titanium on the top of the filler material and on the wall of the TGV between the top of the filler material and the first side of the glass layer; and depositing a layer of conductive material that covers the layer that includes titanium.
  11. 11 . The method of claim 10 , wherein depositing the layer that includes titanium further includes depositing the layer that includes titanium using sputtering.
  12. 12 . The method of claim 10 , wherein the conductive material is a first conductive material; and wherein filling the TGV with conductive material further includes: removing the filler material to expose a surface of the layer that includes titanium in the TGV; removing the layer that includes titanium exposing the first conductive material within the TGV; and depositing a second conductive material within a volume of the TGV between the exposed first conductive material and the second side of the glass layer, wherein the first conductive material is electrically coupled with the second conductive material.
  13. 13 . The method of claim 12 , wherein the first conductive material and the second conductive material include copper or a copper alloy.
  14. 14 . The method of claim 12 , wherein removing the filler material further includes removing the filler material using a wet etch or a dry etch process.
  15. 15 . The method of claim 12 , wherein moving the layer that includes titanium further includes removing the layer that includes titanium using a wet etch or a dry etch process.
  16. 16 . The method of claim 9 , wherein after the step of forming a layer that includes titanium on a wall of the TGV, further comprising planarizing first side of the glass layer.
  17. 17 . The method of claim 9 , wherein the TGV has a diameter at the first side of the glass layer, and wherein the TGV has a length extending from the first side of the glass layer to the second side of the glass layer; and wherein a ratio of the length of the TGV to the diameter of the TGV is greater than 8.
  18. 18 . A package comprising: a glass layer that includes: a first side and a second side opposite the first side; a through glass via (TGV) that extends from the first side of the glass layer to the second side of the glass layer; a conductive material inside the TGV to electrically couple the first side of the glass layer with the second side of the glass layer; and a layer of titanium within the TGV and proximate to the first side of the glass layer between a portion of the conductive material and a side of the TGV, the layer of titanium on a first portion of the TGV at the first side of the glass layer but not on the first side of the glass layer and not on a second portion of the TGV at the second side of the glass layer; and one or more dies coupled with the first side of the glass layer and electrically coupled with the conductive material inside the TGV.
  19. 19 . The package of claim 18 , further comprising: a substrate coupled with the second side of the glass layer, the substrate electrically coupled with the one or more dies.
  20. 20 . The package of claim 18 , wherein the glass layer further includes a redistribution layer (RDL) on the first side of the glass layer electrically coupled with the one or more dies.

Description

FIELD Embodiments of the present disclosure generally relate to the field of semiconductor packaging, and in particular glass cores with through glass vias (TGV). BACKGROUND Continued growth in computing and mobile devices will continue to increase the demand for bandwidth density between components within semiconductor packages. BRIEF DESCRIPTION OF THE DRAWINGS FIGS. 1A-1B illustrate a side view of a package and a top-down view of a glass layer that includes high aspect ratio TGVs to electrically couple a plurality of dies with the substrate, in accordance with various embodiments. FIG. 2 illustrates a block diagram of a side view of various TGV within glass layer, in accordance with various embodiments. FIGS. 3A-3G illustrate various stages in a manufacturing process to create a high aspect ratio TGV that is electrically conductive, in accordance with various embodiments. FIGS. 4A-4F illustrate various stages in another manufacturing process to create a high aspect ratio TGV that is electrically conductive, in accordance with various embodiments. FIG. 5 illustrates an example of a process for creating a high aspect ratio TGV that is electrically conductive, in accordance with various embodiments. FIG. 6 illustrates multiple examples of laser-assisted etching of glass interconnects processes, in accordance with embodiments. FIG. 7 schematically illustrates a computing device, in accordance with various embodiments. DETAILED DESCRIPTION Embodiments described herein may be related to apparatuses, processes, and/or techniques related to manufacturing glass layers that include one or more high aspect ratio TGV that are filled with electrically conductive material. In embodiments, a high aspect ratio TGV extends from a first side of the glass layer to a second side of the glass layer opposite the first side. These TGV include electrically conductive material, which may also be referred to as metallized, to provide a high-quality electrical connection between the first side of the glass layer and the second side of the glass layer. In embodiments, the ratio of a length of the TGV to a diameter of the TGV may be 8 or higher. Embodiments described herein may enable TGV metallization architectures without the need to deposit high aspect ratio seed within the entire TGV, thus enabling TGVs with high aspect ratios to be metallized. In embodiments, the glass layers may also be glass cores within a substrate. Glass cores may be selected for semiconductor substrate packaging to enable high-frequency signal transmissions between components within the package. For example, central processing unit (CPU) tiles and high-bandwidth memory tiles within a disaggregated CPU architecture may be coupled using multiple TGVs within a glass core bridge. The flatness and stiffness provided by the glass core may enable tighter electrical routings on the glass core or in layers coupled with the glass core. As a result, glass cores provide better coplanarity and rigidity in comparison to organic cores and may resulting in better package performance and reliability over organic cores that may be more uneven and less rigid. In embodiments, TGVs within the glass core may be filled with conductive material such as copper and may be used to electrically couple interconnects on the front and the back sides of a semiconductor package to transmit electrical signals, including high-frequency electrical signals, through the TGVs. In legacy implementations, during creation of the TGV, placement of the conductive material may be challenging using a conventional metal seeding and subsequent electrolytic plating process of a copper conductor material if the TGV has an aspect ratio that is too high. In legacy manufacturing processes, copper seed sputtering may be used. As a line of sight process, sputtering can result in limited seed deposition on the TGV walls for high aspect ratio TGVs. This may produce unreliable electrical connections through the TGV as a consequence of higher thin film resistance, or may result in TGVs that have electrical discontinuities. Some legacy implementations attempt to address this deficiency in sputtering by tilting the glass during the copper seed sputtering process. However, with such an approach, it will become increasingly difficult to scale with TGVs with higher aspect ratios. Embodiments described herein include processes to metalize high aspect ratio TGVs within a glass core. One such process may include partially filling a TGV from a first side of the glass core with a sacrificial material, for example a dry film resist (DFR) to serve as a temporary framework for a one-sided seed sputter, followed by a layer of another metal, such as titanium. After removal of the sacrificial material from the second side of the glass core opposite the first side of glass core, the titanium metal may be etched. In embodiments, the TGV may be subsequently filled with copper from the second side of glass core using one-sided platin